RESUMEN
For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS²) layers, MoS² thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400-550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS² layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct E12g and A1g peaks for the MoS² layers sputtered at lower RF powers. The X-ray photoelectron spectroscopy results revealed that more distinct peaks were observed at a higher RTA temperature, and the peak positions were moved to higher energies at a lower RF sputtering power. Based on the Hall measurements, higher carrier densities were obtained for the MoS² layers sputtered at lower RF powers.
RESUMEN
Molybdenum disulfide (MoS2) films were directly formed on soda-lime glass substrates by radio-frequency (RF) sputtering and rapid thermal processing (RTP) to avoid physical exfoliation and transfer process of a MoS2 layer. The sputtering time was adjusted in the fabrication process and the thickness effects of the MoS2 films were investigated in terms of structural and electrical characteristics. The surface morphologies were not dependent on the film thickness but on the RF sputtering power after the film was annealed using RTP. The electrical mobility of the MoS2 film was more dependent on the film thickness at lower RF sputtering powers and low annealing temperatures. An investigation of the E12g and A11g peaks in the Raman spectra revealed that the two-dimensional properties of the MoS2 layers were more distinct in the case of a lower thickness.