Cleavage of Calcitic CaCO3 during Dissolution in Aqueous Solution.

Calcite cleavage was observed using a device to accelerate the formation and dissolution of calcitic CaCO3 by acidification in aqueous solutions. Scanning electron microscopy showed that crystals formed within 1 day and dissolution began at 3 days of aging. In the X-ray diffraction pattern, calcite was predominantly formed but an amorphous phase did not exist, even after 12 days of aging. In the diffraction pattern and lattice images obtained using a series of high-resolution transmission electron microscopy analyses, cleavages mainly occurred in the {101̅1} plane and some cleavages were observed through the {101̅4} plane.

Stable maintenance of the Mre11-Rad50-Nbs1 complex is sufficient to restore the DNA double-strand break response in cells lacking RecQL4 helicase activity.

The proper cellular response to DNA double-strand breaks (DSBs) is critical for maintaining the integrity of the genome. RecQL4, a DNA helicase of which mutations are associated with Rothmund-Thomson syndrome (RTS), is required for the DNA DSB response. However, the mechanism by which RecQL4 performs these essential roles in the DSB response remains unknown. Here, we show that RecQL4 and its helicase activity are required for maintaining the stability of the Mre11-Rad50-Nbs1 (MRN) complex on DSB sites during a DSB response. We found using immunocytochemistry and live-cell imaging that the MRN complex is prematurely disassembled from DSB sites in a manner dependent upon Skp2-mediated ubiquitination of Nbs1 in RecQL4-defective cells. This early disassembly of the MRN complex could be prevented by altering the ubiquitination site of Nbs1 or by expressing a deubiquitinase, Usp28, which sufficiently restored homologous recombination repair and ATM, a major checkpoint kinase against DNA DSBs, activation abilities in RTS, and RecQL4-depleted cells. These results suggest that the essential role of RecQL4 in the DSB response is to maintain the stability of the MRN complex on DSB sites and that defects in the DSB response in cells of patients with RTS can be recovered by controlling the stability of the MRN complex.

Strain mapping in a nanoscale-triangular SiGe pattern by dark-field electron holography with medium magnification mode.

Recent years have seen a great deal of progress in the development of transmission electron microscopy-based techniques for strain measurement. Dark-field electron holography (DFEH) is a new technique offering configuration of the off-axis principle. Using this technique with medium magnification (Holo-M), we carried out strain measurements in nanoscale-triangular SiGe/(001) Si with (004), (2-20) and (-111) diffraction spots. The reconstruction of holograms and interpretation of strain maps in term of strain precision were discussed and the strain distributions in the SiGe/(001) Si patterns were visualized. Based on linear anisotropic elastic theory for strain simulation, the simulated results obtained by the finite element method compared with the experimental results acquired by DFEH. The strain values were found to be 0.9-1.0%, 1.1-1.2% and 1.0-1.1%, for the (004), (2-20) and (-111) diffracted beams, respectively, and the strain precisions were determined to be ~2.1 × 10-3, 3.2 × 10-3 and 9.1 × 10-3 for the corresponding diffraction spots. As a result, DFEH is highlighted as a powerful technique for strain measurement, offering high-strain precision, high-spatial resolution and a large field of view.

Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration.

Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

Transmission electron microscopy study of microstructural properties and dislocation characterization in the GaN film grown on the cone-shaped patterned Al2O3 substrate.

Growing a GaN film on a patterned Al2O3 substrate is one of the methods of reducing threading dislocations (TDs), which can significantly deteriorate the performance of GaN-based LEDs. In this study, the microstructural details of the GaN film grown on a cone-shaped patterned Al2O3 substrate were investigated using high-resolution transmission electron microscopy and weak-beam dark-field techniques. Various defects such as misfit dislocations (MDs), recrystallized GaN (R-GaN) islands and nano-voids were observed on the patterned Al2O3 surfaces, i.e. the flat surface (FS), the inclined surface (IS) and the top surface (TS), respectively. Especially, the crystallographic orientation of R-GaN between the GaN film and the inclined Al2O3 substrate was identified as $[\overline 1 2\overline 1 0]_{{\rm GaN}} \hbox{//}[\overline 1 101]_{{\rm R - GaN} \,{\rm on}\,{\rm IS}} \hbox{//}[\overline 1 100]_{ {{\rm Al}} _{\rm 2} {\rm O}_{\rm 3}} $, $(\overline 1 012)_{{\rm GaN}} \hbox{//}(1\overline 1 02)_{{\rm R - Ga}\,{\rm Non}\,{\rm IS}} \hbox{//}(\overline {11} 26)_{ {{\rm Al}} _{\rm 2} {\rm O}_{\rm 3}} $. In addition, a rotation by 9° between $(10\overline 1 1)_{{\rm R - GaN}} $ and $(0002)_{{\rm GaN}} $ and between $(10\overline 1 1)_{{\rm R - GaN}} $ and $(0006)_{ {{\rm Al}} _{\rm 2} {\rm O}_{\rm 3}} $ was found to reduce the lattice mismatch between the GaN film and the Al2O3 substrate. Many TDs in the GaN film were observed on the FS and TS of Al2O3. However, few TDs were observed on the IS. Most of the TDs generated from the FS of Al2O3 were bent to the inclined facet rather than propagating to the GaN surface, resulting in a reduction in the dislocation density. Most of the TDs generated from the TS of Al2O3 were characterized as edge dislocations.

Thermal endurance and microstructural evolution of PtGe for high-performance nano-scale Ge-on-Si MOSFETS.

The thermal endurance and microstructural evolution of Ni-germanide (NiGe) and Pt-germanide (PtGe) on a Ge-on-Si substrate were compared in this paper. In case of the Ni/TiN structure, the sheet resistance exhibited a stable RTP window of 350 to 600 degrees C, while that of the Pt/TiN structure showed more stable characteristics up to 700 degrees C. Furthermore, after post-germanidation annealing, NiGe exhibited the formation of islands due to the severe agglomeration as well as a prominent grain boundary grooving, which accounts for the sharp increase of the sheet resistance from 550 degrees C, whereas PtGe showed a smooth and continuous surface morphological stability without signs of agglomeration even up to 600 degrees C. Although about two times higher resistivity (31.5 micro ohms-cm) and greater Ge consumption (3.27 nm) were shown, PtGe showed more stable sheet resistance, better surface and interface morphological stability and a wider thermal processing window above 100 degrees C than NiGe. Therefore, PtGe is more suitable for the germanided shallow source/drain for nano-scale Ge MOSFETs than NiGe.

Transmission electron microscopy analysis of octanethiol-coated Cu powders.

In this study, microstructures of Cu powders coated with octanethiol were analyzed using (scanning) transmission electron microscopy. Moreover, aging process of the octanethiol-coated layer as time passes by was analyzed using the electron energy loss spectroscopy technique. The octanethiol layer coated on the surface of Cu powders was kept until it was exposed to air for around 30 days. As days passes by, the coating layer had been decomposed and then a Cu(2)O layer was formed on the surface of powders.

Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling.

The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, DeltaV(p-n), by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, DeltaV(p-n) was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.