Long wavelength mid-infrared multi-gases spectroscopy using tunable single-mode slot waveguide quantum cascade laser.

Single-mode tunable quantum cascade lasers (QCLs) are promising for high-resolution and highly sensitive trace gases sensing across the mid-infrared (MIR) region. We report on the development of a tunable single-mode slot waveguide QCL array in the long wavelength part of the MIR regime (>12 µm). This laser array exhibits a tuning range of around 12 cm-1, from 735.3 to 747.3 cm-1. Using this developed single-mode tunable QCL, we demonstrate individual gas sensing, yielding the detection limit of 940 ppb and 470 ppb for acetylene and o-xylene, respectively. To verify the potential of the developed QCL array in multi-species gas detection, laser absorption measurements of two mixed gases of acetylene and o-xylene were conducted, showing the absorption features of the corresponding gases agree well with the theoretical predictions.

Beam combining of a broadly and continuously tunable quantum cascade laser.

We report a cost-efficient method to demonstrate the beam combining of five laser elements in an array of tunable slot waveguide quantum cascade lasers in the mid-infrared region at around 10 µm. An aspherical lens with five fine-tuned mini mirrors was employed to collimate the individual beams from the laser array. To verify the feasibility of this beam combining approach, the combined beams were coupled into a hollow-core fiber gas cell with a low numerical aperture (N.A.) of 0.03 and a coupling efficiency >= 0.82, for gas sensing of binary compound gases of ammonia and ethylene simultaneously.

Widely tunable single-mode slot waveguide quantum cascade laser array.

We report designs and experimental demonstrations of a widely tunable single-mode quantum cascade laser array based on slot waveguide structures in the mid-infrared region. The laser array device realized a continuous tuning range of 71 cm-1 from 9.66 µm to 10.37 µm at 300 K only using the current tuning without any external heatsink temperature adjustments, in good agreement with the design. Stable single-mode operations free of undesired mode-hops have been obtained over the whole tuning range. Another slot waveguide QCL array with a 41 cm-1 continuous tuning range around 7.3 µm has also been realized with the same design principle, demonstrating the universal applicability of the array design. The broadly continuous tuning with simple processing makes the array device a suitable candidate for mid-infrared sensing and spectroscopy application.

High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection.

We present a novel, to the best of our knowledge, InGaAs/InAlAs single-photon avalanche diode (SPAD) with a triple-mesa structure. Compared with the traditional mesa structures, the horizontal distribution of the electric field decreases dramatically, while the peaks of the electric field at the mesa edges are well eliminated in the triple-mesa structure, leading to an excellent suppression of the surface leakage current and premature breakdown. Furthermore, the temperature coefficient of the breakdown voltage was measured to be as small as 37.4 mV/K within a range from 150 to 270 K. Eventually, one of the highest single-photon detection efficiencies of 35% among all the InGaAs/InAlAs SPADs with a decent dark count rate of ${3.3} \times {{10}^7}\;{\rm Hz}$ was achieved at 240 K. Combined with the inherent ease of integration of the mesa structure, this high-performance triple-mesa InGaAs/InAlAs SPAD provides an effective solution for the fabrication of SPAD arrays and the on-chip integration of quantum systems.

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform.

We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection range of GeSn photodetector is extended beyond 2 µm, with responsivities of 0.39 and 0.10 A/W at 1550 nm and 2003 nm, respectively. Through the insertion of an ultrathin Al2O3 Schottky-barrier-enhancement layer, the dark current IDark of the GeSn photodetector is suppressed by more than 2 orders of magnitude. An impressive IDark of ~65 nA was achieved at an operating voltage of 1.0 V. A frequency response measurement reveals the achievement of a 3-dB bandwidth of ~1.4 GHz at an illumination wavelength of 2 µm. GeSn pFinFET with fin width (Wfin) scaled down to 15 nm was also fabricated on the GeSnOI platform, exhibiting a small subthreshold swing (S) of 93 mV/decade, a high drive current of 176 µA/µm, and good control of short channel effects (SCEs). This work paves the way for realizing compact, low-cost, and multi-functional GeSn-on-insulator opto-electronic integrated circuits.

Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region.

In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In0.82Al0.18Sb barrier layer increased the 77 K R0A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 109 cmHz1/2W-1 at 5.3 µm.

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an ION/IOFF ratio of more than 106 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range.

The floating-base germanium-tin (Ge1-xSnx) heterojunction phototransistor (HPT) is designed and investigated as an efficient optical receiver in the short-wave infrared range. Simulations indicate that as the Sn content increases, the responsivity significantly increases due to a higher absorption coefficient and a larger valence band offset between Ge and Ge1-xSnx. Ge0.935Sn0.065 HPTs that incorporated high-quality Ge0.935Sn0.065 film grown by molecular beam epitaxy were fabricated, demonstrating optical response beyond wavelength of 2003 nm. At a low bias voltage of 1.0 V, optical response enhancement of ~10 times was achieved over the conventional Ge0.935Sn0.065 p-i-n photodiode. High responsivities of ~1.8 A/W at 1550 nm and ~0.043 A/W at 2003 nm were demonstrated with low dark current density of 0.147 A/cm2.

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

We report the demonstration of a germanium-tin (Ge0.9Sn0.1) multiple-quantum-well p-i-n photodiode on silicon (Si) substrate for 2 µm-wavelength light detection. Characterization of the photodetector in both direct current (DC) and radio frequency (RF) regimes was performed. At the bias voltage of -1 V, a dark current density of 0.031 A/cm2 is realized at room-temperature, which is among the lowest reported values for Ge1-xSnx-on-Si p-i-n photodiodes. In addition, for the first time, a 3 dB bandwidth (f3dB) of around 1.2 GHz is achieved in Ge1-xSnx photodetectors operating at 2 µm. It is anticipated that further device optimization would extend the f3dB to above 10 GHz.

Monolithic integration of InGaAs n-FETs and lasers on Ge substrate.

We report the first monolithic integration of InGaAs channel field-effect transistors with InGaAs/GaAs multiple quantum wells (MQWs) lasers on a common platform, achieving a milestone in the path of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers used for realizing transistors and lasers were grown epitaxially on the Ge substrate using molecular beam epitaxy (MBE). A Si-CMOS compatible process was developed to realize InGaAs n-FETs with subthreshold swing SS of 93 mV/decade, ION/IOFF ratio of more than 4 orders of magnitude with very low off-state leakage current, and a peak effective mobility of more than 2000 cm2/V·s. In addition, fabrication process uses a low overall processing temperature (≤ 400 °C) to maintain the high quality of the InGaAs/GaAs MQWs for the laser. Room temperature electrically-pumped lasers with a lasing wavelength of 1.03 µm and a linewidth of less than 1.7 nm were realized.

Epitaxy and characterization of GaInP/AlInP light-emitting diodes on As-doped Ge/Si substrates.

We investigate the impact of threading dislocation density (TDD) and thermal conductivity of substrates on the performance of GaInP/AlInP light-emitting diodes (LEDs) for the integration of III-V optoelectronics on Si. We utilized an arsenic (As) doped Ge/Si substrate that showed a reduced TDD compared to undoped Ge/Si. Compared to LEDs on undoped Ge/Si, the leakage current density for LEDs on As-doped Ge/Si substrate is reduced by four orders of magnitude and the light output is increased six-fold. An increased junction temperature causes light output saturation for LEDs on bulk Ge at high injection current densities. The light output of LEDs on As-doped Ge/Si shows good linearity with injection current density and its junction temperature is ~25 ± 5 °C lower than that of LEDs on bulk Ge at high injection current densities due to better thermal conductivity of the Ge/Si substrate.

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

We demonstrate that a complementary metal-oxide-semiconductor (CMOS) compatible silicon (Si) surface passivation technique effectively suppress the dark current originating from the mesa sidewall of the Ge(0.95)Sn(0.05) on Si (Ge(0.95)Sn(0.05)/Si) p-i-n photodiode. Current-voltage (I-V) characteristics show that the sidewall surface passivation technique could reduce the surface leakage current density (Jsurf) of the photodiode by ~100 times. A low dark current density (Jdark) of 0.073 A/cm(2) at a bias voltage of -1 V is achieved, which is among the lowest reported values for Ge(1-x)Sn(x)/Si p-i-n photodiodes. Temperature-dependent I-V measurement is performed for the Si-passivated and non-passivated photodiodes, from which the activation energies of dark current are extracted to be 0.304 eV and 0.142 eV, respectively. In addition, the optical responsivity of the Ge(0.95)Sn(0.05)/Si p-i-n photodiodes to light signals with wavelengths ranging from 1510 nm to 1877 nm is reported.

Effects of annealing on performances of 1.3-µm InAs-InGaAs-GaAs quantum dot electroabsorption modulators.

In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-µm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely with the annealing temperature. Most importantly, the 3-dB response of the 750°C-annealed lumped-element QD-EAM was found to be 1.6 GHz at zero reverse bias voltage - the lowest reverse bias voltage reported. We believe that this work will be beneficial to researchers working on on-chip integration of QD-EAMs with other devices since energy consumption will be an important consideration.

Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion.

We demonstrate experimentally the submicron size self-assembled (SA) GaAs quantum rings (QRs) by quantum size effect (QSE). An ultrathin In0.1 Ga0.9As layer with different thickness is deposited on the GaAs to modulate the surface nucleus diffusion barrier, and then the SA QRs are grown. It is found that the density of QRs is affected significantly by the thickness of inserted In0.1 Ga0.9As, and the diffusion barrier modulation reflects mainly on the first five monolayer . The physical mechanism behind is discussed. The further analysis shows that about 160 meV decrease in diffusion barrier can be achieved, which allows the SA QRs with density of as low as one QR per 6 µm2. Finally, the QRs with diameters of 438 nm and outer diameters of 736 nm are fabricated using QSE.

Feasibility study on bonding quality inspection of microfluidic devices by optical coherence tomography.

This paper reports the feasibility of optical coherence tomography (OCT) technology for inspection of bonding quality of microfluidic devices in manufacturing environments. A compact optical-fiber-based OCT is developed and its measurement performance is characterized. A series of microfluidic devices respectively bonded by adhesive tape, thermal method, and oxygen plasma, are inspected. The defects of geometry deformation and sealing completeness are emphasized during measurements. Based on the inspection results, some discoveries related to the production of microfluidic devices are discussed.

Improved ground-state modulation characteristics in 1.3 µm InAs/GaAs quantum dot lasers by rapid thermal annealing.

We investigated the ground-state (GS) modulation characteristics of 1.3 µm InAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. The choice of annealing conditions was determined from our recently reported results. With reference to the as-grown QD lasers, one obtains approximately 18% improvement in the modulation bandwidth from the annealed QD lasers. In addition, the modulation efficiency of the annealed QD lasers improves by approximately 45% as compared to the as-grown ones. The observed improvements are due to (1) the removal of defects which act as nonradiative recombination centers in the QD structure and (2) the reduction in the Auger-related recombination processes upon annealing.

Gallium arsenide (GaAs) island growth under SiO(2) nanodisks patterned on GaAs substrates.

We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO(2) nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO(2) nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of approximately 50 x 50 microm(2) (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of 'catalytic' growth and facet formation.

Measurement of buried undercut structures in microfluidic devices by laser fluorescent confocal microscopy.

Measuring buried, undercut microstructures is a challenging task in metrology. These structures are usually characterized by measuring their cross sections after physically cutting the samples. This method is destructive and the obtained information is incomplete. The distortion due to cutting also affects the measurement accuracy. In this paper, we first apply the laser fluorescent confocal microscopy and intensity differentiation algorithm to obtain the complete three-dimensional profile of the buried, undercut structures in microfluidic devices, which are made by the soft lithography technique and bonded by the oxygen plasma method. The impact of material wettability and the refractive index (n) mismatch among the liquid, samples, cover layer, and objective on the measurement accuracy are experimentally investigated.

Microvalve thickness and topography measurements in microfluidic devices by white-light confocal microscopy.

A microvalve is a key part in a multilayer microfluidic device to control the fluid flow, and its thickness directly determines its performance. In this paper, a three-dimensional measurement technology using a white-light confocal microscope is developed for measuring both the topography and thickness of microvalves. The impact of system parameters and sample parameters on measurement accuracy is discussed in detail, particularly for measurement with a dry objective. With this technique, the microvalve thicknesses before and after bonding were characterized with submicrometer measurement sensitivity and about 1 microm measurement accuracy.

White-light scanning interferometer for absolute nano-scale gap thickness measurement.

A special configuration of white-light scanning interferometer is described for measuring the absolute air gap thickness between two planar plates brought into close proximity. The measured gap is not located in any interference arm of the interferometer, but acts as an amplitude-and-phase modulator of the light source. Compared with the common white-light interferometer our approach avoids the influence of the chromatic dispersion of the planar plates on the gap thickness quantification. It covers a large measurement range of from approximate contact to tens of microns with a high resolution of 0.1 nm. Detailed analytical models are presented and signal-processing algorithms based on convolution and correlation techniques are developed. Practical measurements are carried out and the experimental results match well with the analysis and simulation. Short-time and long-time repeatabilities are both tested to prove the high performance of our method.