RESUMEN
Gallium Nitride (GaN), as the representative of wide bandgap semiconductors, has great prospects in accomplishing rapid charge delivery under high-temperature environments thanks to excellent structural stability and electron mobility. However, there is still a gap in wafer-scale GaN single-crystal integrated electrodes applied in the energy storage field. Herein, Si-doped GaN nanochannel with gallium oxynitride (GaON) layer on a centimeter scale (denoted by GaN NC) is reported. The Si atoms modulate electronic redistribution to improve conductivity and drive nanochannel formation. Apart from that, the distinctive nanochannel configuration with a GaON layer provides adequate active sites and extraordinary structural stability. The GaN-based supercapacitors are assembled and deliver outstanding charge storage capabilities at 140 °C. Surprisingly, 90% retention is maintained after 50 000 cycles. This study opens the pathway toward wafer-scale GaN single-crystal integrated electrodes with self-powered characteristics that are compatible with various (opto)-electronic devices.
RESUMEN
As a wide band gap semiconductor, gallium nitride (GaN) has high breakdown voltage, excellent structural stability and mechanical properties, giving it unique advantages in applications such as high frequency, high power, and high temperature. As a result, it has broad application prospects in optoelectronics and microelectronics. However, the lack of high-quality, large-size GaN crystal substrates severely limit the improvement of electronic device performance. To solve this problem, liquid phase growth of GaN has attracted much attention because it can produce higher quality GaN crystals compared to traditional vapor phase growth methods. This review introduces two main methods of liquid phase growth of GaN: the flux method and ammonothermal method, as well as their advantages and challenges. It reviews the research history and recent advances of these two methods, including the effects of different solvents and mineralizers on the growth quality and performance of GaN crystals, as well as various technical improvements. This review aims to outline the principles, characteristics, and development trends of liquid phase growth of GaN, to provide more inspiration for future research on liquid phase growth, and to achieve further breakthroughs in its development and commercial application.
RESUMEN
Gallium nitride (GaN) single crystal, as the representative of wide-band semiconductors, has great prospects for high-temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN-based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO2 ï¼heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO2 with massive active sites. The GaN/NiCoO2 heterostructure-based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm-2 and power density, as well as superior service life at 130 °C. The theoretical calculation further explains that the reason for the energy storage enhancement of the GaN/NiCoO2 is due to the presence of the built-in electric fields. This work offers a novel perspective for meeting the practical application of GaN-based energy storage devices with exceptional performance capable of operation under high-temperature environments.
RESUMEN
Herein, a metal-organic framework (MOF)/polythiophene (PTh)-derived S-doped carbon is successfully designed and prepared employing zeolitic imidazolate frameworks (ZIF-8/ZIF-67) and thiophene (Th) as precursors. The S-doped carbon presents a neuronlike three-dimensional network structure (3DSC). The 3DSC delivers extra-high capacities (225 mAh/g at 5000 mA/g after 3000 cycles) and excellent endurance ability of current changes when applied in Na-ion batteries (SIBs). Moreover, when the 3DSC-700 anode is coupled with a sodium vanadium phosphate cathode to construct a Na-ion full cell, after 50 cycles, a high capacity of â¼229.64 mAh/g is obtained at 100 mA/g. Electrochemical impedance spectroscopy analysis, density functional theory calculations, and pseudocapacitance contributions are adopted to investigate the excellent sodium storage mechanism of the 3DSC electrode. A new idea has been provided in this work to open up the possibility of MOF materials and carbon-based materials applications in SIBs in the future.
RESUMEN
The progress in nitrides technology is widely believed to be limited and hampered by the lack of high-quality gallium nitride wafers. Though various epitaxial techniques like epitaxial lateral overgrowth and its derivatives have been used to reduce defect density, there is still plenty of room for the improvement of gallium nitride crystal. Here, we report graphene or hexagonal boron nitride nanosheets can be used to improve the quality of GaN crystal using hydride vapor phase epitaxy methods. These nanosheets were directly deposited on the substrate that is used for the epitaxial growth of GaN crystal. Systematic characterizations of the as-obtained crystal show that quality of GaN crystal is greatly improved. The fabricated light-emitting diodes using the as-obtained GaN crystals emit strong electroluminescence under room illumination. This simple yet effective technique is believed to be applicable in metal-organic chemical vapor deposition systems and will find wide applications on other crystal growth.
RESUMEN
GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress.
RESUMEN
The new plasmonic photocatalyst Ag@Ag(Br,I) was synthesized by the ion-exchange process between the silver bromide and potassium iodide, then by reducing some Ag(+) ions in the surface region of Ag(Br,I) particles to Ag(0) species. Ag nanoparticles are formed from Ag(Br,I) by the light-induced chemical reduction reaction. The Ag@Ag(Br,I) particles have irregular shapes with their sizes varying from 83 nm to 1 mum. The as-grown plasmonic photocatalyst shows strong absorption in the visible light region because of the plasmon resonance of Ag nanoparticles. The ability of this compound to reduce Cr(VI) under visible light was compared with those of other reference photocatalyst. The plasmonic photocatalyst is shown to be highly efficient under visible light. The stability of the photocatalyst was examined by X-ray diffraction and X-ray photoelectron spectroscopy. The XRD pattern and XPS spectra prove the stability of the plasmonic photocatalyst Ag@Ag(Br,I).
RESUMEN
CdIn(2)O(4) hollow spheres were synthesized by a self-template method. Cadmium nitrate (Cd(NO(3))(2).4H(2)O) and indium nitrate (In(NO(3))(3).4.5H(2)O) were used as raw materials. XRD and SEM were employed to characterize the structures and morphologies of as-grown samples. The effects of Cd/In ratios on the compositions, morphologies, and photocatalytic activities have been systematically investigated. A self-template growth mechanism of CdIn(2)O(4) hollow spheres was proposed. And pure phase of CdIn(2)O(4) can be obtained with Cd/In ratio of 1.3:2 annealing at 800 degrees C according to our experiments. The sample with the Cd/In ratio of 1.4:2 exhibited the highest photocatalytic efficiency, and more than 80% of Methylene Blue molecules can be decomposed in 180 min.
