Characterization of the Interfacial Structures of Core/Shell CdSe/ZnS QDs.

Core/shell quantum dots (QDs) have been extensively studied, yet their optical properties widely vary among studies. Such variation may arise from the variation in interfacial structures induced by the subtle difference in each synthetic procedure. Here, we studied the interfacial structures of CdSe/ZnS QDs using the time-of-flight medium energy ion-scattering spectroscopy (TOF-MEIS), which offers the radial elemental distributions as well as the overall elemental compositions of QDs. The TOF-MEIS spectra provided strong evidence for the existence of an alloyed layer at the interface between CdSe and ZnS in typical CdSe/ZnS QDs. On the basis of the emission and absorption spectra of QDs sampled during the synthesis, we conclude that such interfacial alloying is caused by the dissolution of CdSe seeds during the synthesis steps. Such a dissolution mechanism is further corroborated by the observation that the ligand environment of solvent (X or L type) leads to different shapes of interfaces.

Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy.

We report on a temperature-dependent band gap property of epitaxial MoSe2 ultrathin films. We prepare uniform MoSe2 films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-high vacuum showed temperature-dependent optical spectra between room temperature to 850 °C. We observed a gradual energy shift of optical band gap depending on the measurement temperature for different film thicknesses. Fitting with the vibronic model of Huang and Rhys indicates that the constant thermal expansion accounts for the steady decrease of band gap. We also directly probe both optical and stoichiometric changes across the decomposition temperature, which should be useful for developing high-temperature electronic devices and fabrication process with the similar metal chalcogenide films.

Quantitative compositional profiling of conjugated quantum dots with single atomic layer depth resolution via time-of-flight medium-energy ion scattering spectroscopy.

We report the quantitative compositional profiling of 3-5 nm CdSe/ZnS quantum dots (QDs) conjugated with a perfluorooctanethiol (PFOT) layer using the newly developed time-of-flight (TOF) medium-energy ion scattering (MEIS) spectroscopy with single atomic layer resolution. The collection efficiency of TOF-MEIS is 3 orders of magnitude higher than that of conventional MEIS, enabling the analysis of nanostructured materials with minimized ion beam damage and without ion neutralization problems. The spectra were analyzed using PowerMEIS ion scattering simulation software to allow a wide acceptance angle. Thus, the composition and core-shell structure of the CdSe cores and ZnS shells were determined with a 3% composition uncertainty and a 0.2-nm depth resolution. The number of conjugated PFOT molecules per QD was also quantified. The size and composition of the QDs were consistent with those obtained from high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy, respectively. We suggest TOF-MEIS as a nanoanalysis technique to successfully elucidate the core-shell and conjugated layer structures of QDs, which is critical for the practical application of QDs in various nano- and biotechnologies.