High-uniformity and high-performance waveguide Ge photodetectors for the O and C bands.

This paper presents the test results for high-performance and high-uniformity waveguide silicon-based germanium (Ge) photodetectors (PDs) for the O band and C band. Both wafer-scale and chip-scale test results are provided. The fabricated lateral p-i-n (LPIN) PDs exhibit a responsivity of 0.97 A/W at a bias of -2V, a bandwidth of 60 GHz, and a no-return-to-zero (NRZ) eye diagram rate of 53.125 Gb/s. Additionally, an average dark current of 22.4 nA was obtained in the vertical p-i-n (VPIN) PDs at -2V by optimizing the doping process. The device can reach an average responsivity of 0.9 A/W in the O band. The standard deviation in a wafer with a dark current and responsivity is as low as 7.77 nA and 0.03 A/W at -2V, respectively.

Beam Steering Technology of Optical Phased Array Based on Silicon Photonic Integrated Chip.

Light detection and ranging (LiDAR) is widely used in scenarios such as autonomous driving, imaging, remote sensing surveying, and space communication due to its advantages of high ranging accuracy and large scanning angle. Optical phased array (OPA) has been studied as an important solution for achieving all-solid-state scanning. In this work, the recent research progress in improving the beam steering performance of the OPA based on silicon photonic integrated chips was reviewed. An optimization scheme for aperiodic OPA is proposed.

PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band.

We report the demonstration of a germanium waveguide p-i-n photodetector (PD) for the C + L band light detection. Tensile strain is transferred into the germanium layer using a SiN stressor on top surface of the germanium. The simulation and experimental results show that the trenches must be formed around the device, so that the strain can be transferred effectively. The device exhibits an almost flat responsivity with respect to the wavelength range from 1510 nm to 1630 nm, and high responsivity of over 1.1 A/W is achieved at 1625 nm. The frequency response measurement reveals that a high 3 dB bandwidth (f3dB) of over 50 GHz can be obtained. The realization of the photonic-integrated circuits (PIC)-integrable waveguide Ge PDs paves the way for future telecom applications in the C + L band.

High-speed compact folded Michelson interferometer modulator.

We propose and experimentally demonstrate a novel compact folded Michelson interferometer (FMI) modulator with high modulation efficiency. By folding the 0.5 mm-long phase shift arms, the length of the modulation area of the FMI modulator is only 0.25 mm. Meanwhile, the traveling wave electrode (TWE) is also shorter, which decreases the propagation loss of the RF signal and contributes to a small footprint. The Vπ-L of the present device is as low as 0.87 V·cm at -8 V bias voltage. The minimum optical insertion loss is 3.7 dB, and the static extinction ratio (ER) is over 25 dB. The measured 3-dB electro-optical (EO) bandwidth is 17.3 GHz at a -6 V bias. The OOK eye diagram up to 40 Gb/s is demonstrated under 2 V driver voltage.

80Gb/s NRZ Ge waveguide electro-absorption modulator.

We demonstrate a Ge electro-absorption modulator (EAM) in L band with a 3 dB electro-optical bandwidth beyond 67 GHz at -3 V bias voltage. The Eye diagram measurement shows a data rate of over 80 Gbps for non-return-to-zero on-off keying (NRZ-OOK) modulation at a voltage swing of 2.3 Vpp and the wavelength of 1605 nm. Through the comparison of multi-device results, it is proved that the introduction of the annealing process after CMP can increase the mean static extinction ratio of the EAM from 7.27 dB to 11.83 dB, which confirms the manufacturability of the device. The dynamic power consumption of the device is 6.348 fJ/bit. The performance of our device is comprehensive. The Ge EAM device also has excellent performance as a photodetector (PD) in the C and L communication bands. The responsivity of the device is 1.04 A/W at the wavelength of 1610 nm, resulting in ∼0.87 mW of static power consumption at -3 V bias voltage under 0.28 mW of optical input and the 3 dB opto-electric bandwidth of the devices are beyond 43 GHz at -3 V bias.

Coherent terahertz radiation with 2.8-octave tunability through chip-scale photomixed microresonator optical parametric oscillation.

High-spectral-purity frequency-agile room-temperature sources in the terahertz spectrum are foundational elements for imaging, sensing, metrology, and communications. Here we present a chip-scale optical parametric oscillator based on an integrated nonlinear microresonator that provides broadly tunable single-frequency and multi-frequency oscillators in the terahertz regime. Through optical-to-terahertz down-conversion using a plasmonic nanoantenna array, coherent terahertz radiation spanning 2.8-octaves is achieved from 330 GHz to 2.3 THz, with ≈20 GHz cavity-mode-limited frequency tuning step and ≈10 MHz intracavity-mode continuous frequency tuning range at each step. By controlling the microresonator intracavity power and pump-resonance detuning, tunable multi-frequency terahertz oscillators are also realized. Furthermore, by stabilizing the microresonator pump power and wavelength, sub-100 Hz linewidth of the terahertz radiation with 10-15 residual frequency instability is demonstrated. The room-temperature generation of both single-frequency, frequency-agile terahertz radiation and multi-frequency terahertz oscillators in the chip-scale platform offers unique capabilities in metrology, sensing, imaging and communications.

Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band.

We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% was achieved in Ge. The surface-illuminated APDs have been studied in respect of the photo-dark current, responsivity, gain, and 3-dB bandwidth. After introducing SiN stressor, the APD exhibits high primary responsivity of 0.80 A/W at 1.55 µm, 0.72 A/W at 1.625 µm, and 3-dB bandwidth of 17.5 GHz. The increased tensile strain in Ge can significantly improve the responsivity and broaden the response band of the device. This work provides a constructive approach to realizing high-responsivity high-speed Ge/Si APD working in the C+L band.

Increasing wavelength-controlled steering range of an optical phased array by using two subarrays.

We demonstrate an optical phased array that consists of two subarrays based on the silicon on insulator (SOI) platform, each subarray including 16 independent channels. The demonstrated field of view of the optical phased array is 36.6∘×32.6∘ with a spot size of 1.68∘×0.0673∘. A steering range of 32.6° is achieved by combining two subarrays with different periods and tuning the wavelength from 1500 nm to 1600 nm. In another dimension, the steering is realized by introducing phase differences between channels.

Silicon nitride assisted 1×64 optical phased array based on a SOI platform.

We demonstrate a 1×64 optical phased array (OPA) based on a silicon on insulator (SOI) platform with integrated silicon nitride. The input port of the OPA is fabricated using a silicon nitride waveguide due to its advantage of allowing more optical power. The phase shifter is a silicon waveguide with heater because of the higher thermo-optic coefficient of silicon. And a double layer silicon nitride assisted grating is used in the emitter to reduce the emission strength and then increase the length of emitter to reduce the spot size. The length of the grating emitter is 1.5 mm and the measured field of view of this optical phased array is 35.5°×22.7° with spot size of 0.69°×0.075°.

Multifunctional optoelectronic device based on graphene-coupled silicon photonic crystal cavities.

We present a hybrid device based on graphene-coupled silicon (Si) photonic crystal (PhC) cavities, featuring triple light detection, modulation, and switching. Through depositing single-layer graphene onto the PhC cavity, the light-graphene interaction can be enhanced greatly, which enables significant detection and modulation of the resonant wavelength. The device is designed to generate a photocurrent directly by the photovoltaic effect and has an external responsivity of ∼14 mA/W at 1530.8 nm (on resonance), which is about 10 times higher than that off-resonance. Based on the thermo-optical effect of silicon and graphene, the device is also demonstrated in electro-optical and all-optical modulation. Also, due to the high-quality (Q) factor of the resonate cavity, the device can implement low threshold optical bistable switching, and it promises a fast response speed, with a rise (fall) time of ∼0.4 µs (∼0.5 µs) in the all-optical switch and a rise (fall) time of ∼0.5 µs (∼0.5 µs) in the electro-optical hybrid switch. The multifunctional photodetector, modulator, and optical bistable switch are achieved in a single device, which greatly reduces the photonic overhead and provides potential applications for future integrated optoelectronics.

Nanometric Precision Distance Metrology via Hybrid Spectrally Resolved and Homodyne Interferometry in a Single Soliton Frequency Microcomb.

Laser interferometry serves a fundamental role in science and technology, assisting precision metrology and dimensional length measurement. During the past decade, laser frequency combs-a coherent optical-microwave frequency ruler over a broad spectral range with traceability to time-frequency standards-have contributed pivotal roles in laser dimensional metrology with ever-growing demands in measurement precision. Here we report spectrally resolved laser dimensional metrology via a free-running soliton frequency microcomb, with nanometric-scale precision. Spectral interferometry provides information on the optical time-of-flight signature, and the large free-spectral range and high coherence of the microcomb enable tooth-resolved and high-visibility interferograms that can be directly read out with optical spectrum instrumentation. We employ a hybrid timing signal from comb-line homodyne, microcomb, and background amplified spontaneous emission spectrally resolved interferometry-all from the same spectral interferogram. Our combined soliton and homodyne architecture demonstrates a 3-nm repeatability over a 23-mm nonambiguity range achieved via homodyne interferometry and over 1000-s stability in the long-term precision metrology at the white noise limits.

Low loss waveguiding and slow light modes in coupled subwavelength silicon Mie resonators.

Subwavelength light-guiding optical devices have gained great attention in the photonics community because they provide unique opportunities for miniaturization and functionality of the optical interconnect technology. On the other hand, high-refractive-index dielectric nanoparticles working at their fundamental Mie resonances have recently opened new venues to enhance and control light-matter interactions at the nanoscale while being free from Ohmic losses. Combining the best of both worlds, here we experimentally demonstrate low-loss slow light waveguiding in a chain of coupled silicon Mie resonators at telecommunication wavelengths. This resonant coupling forms waveguide modes with propagation losses comparable to, or even lower than those in a stripe waveguide of the same cross section. Moreover, the nanoparticle waveguide also exhibits slow light behaviour, with group velocities down to 0.03 of the speed of light. These unique properties of coupled silicon Mie resonator waveguides, together with hybrid coupler designs reducing the coupling loss from a bus waveguide, as also shown in this work, may open a path towards their potential applications in integrated photonics for light control in optical and quantum communications or biosensing, to mention some.

Real-time transition dynamics and stability of chip-scale dispersion-managed frequency microcombs.

Femtosecond mode-locked laser frequency combs have served as the cornerstone in precision spectroscopy, all-optical atomic clocks, and measurements of ultrafast dynamics. Recently frequency microcombs based on nonlinear microresonators have been examined, exhibiting remarkable precision approaching that of laser frequency combs, on a solid-state chip-scale platform and from a fundamentally different physical origin. Despite recent successes, to date, the real-time dynamical origins and high-power stabilities of such frequency microcombs have not been fully addressed. Here, we unravel the transitional dynamics of frequency microcombs from chaotic background routes to femtosecond mode-locking in real time, enabled by our ultrafast temporal magnifier metrology and improved stability of dispersion-managed dissipative solitons. Through our dispersion-managed oscillator, we further report a stability zone that is more than an order-of-magnitude larger than its prior static homogeneous counterparts, providing a novel platform for understanding ultrafast dissipative dynamics and offering a new path towards high-power frequency microcombs.

A Chip-Scale Oscillation-Mode Optomechanical Inertial Sensor Near the Thermodynamical Limits.

Modern navigation systems integrate the global positioning system (GPS) with an inertial navigation system (INS), which complement each other for correct attitude and velocity determination. The core of the INS integrates accelerometers and gyroscopes used to measure forces and angular rate in the vehicular inertial reference frame. With the help of gyroscopes and by integrating the acceleration to compute velocity and distance, precision and compact accelerometers with sufficient accuracy can provide small-error location determination. Solid-state implementations, through coherent readout, can provide a platform for high performance acceleration detection. In contrast to prior accelerometers using piezoelectric or capacitive readout techniques, optical readout provides narrow-linewidth high-sensitivity laser detection along with low-noise resonant optomechanical transduction near the thermodynamical limits. Here an optomechanical inertial sensor with an 8.2 µg Hz-1/2 velocity random walk (VRW) at an acquisition rate of 100 Hz and 50.9 µg bias instability is demonstrated, suitable for applications, such as, inertial navigation, inclination sensing, platform stabilization, and/or wearable device motion detection. Driven into optomechanical sustained-oscillation, the slot photonic crystal cavity provides radio-frequency readout of the optically-driven transduction with an enhanced 625 µg Hz-1 sensitivity. Measuring the optomechanically-stiffened oscillation shift, instead of the optical transmission shift, provides a 220× VRW enhancement over pre-oscillation mode detection.

Broadband and compact polarization beam splitter based on an asymmetrical directional coupler with extra optimizing designs.

In this paper, a novel, to the best of our knowledge, polarization beam splitter (PBS) based on an asymmetrical directional coupler (DC) was proposed, which consists of a strip waveguide (WG) and a ${{\rm Si}_3}{{\rm N}_4}$Si3N4 loaded horizontal slot WG. By carefully adjusting the geometric parameters of the DC, the phase match condition between these two WGs can be satisfied for the transverse magnetic (TM) polarization, while the coupling efficiency of the transverse electric (TE) polarization is frustrated due to the large phase mismatch. The extra optimizing designs include adding filters to the output ports as well as introducing the tapered structure into the DC, which is settled by the particle swarm optimizing (PSO) algorithm so that the performance of the proposed PBS is improved over a broadband range. Numerical simulations show that the bandwidths for the extinction ratio (ER) $ \gt {20}\;{\rm dB}$>20dB, 30 dB, and 40 dB are 160 nm, 95 nm, and 50 nm, respectively, with insertion loss (IL) $ \lt {1}\;{\rm dB}$<1dB for the wavelength of 1.49-1.58 µm. The analysis of the deviations demonstrates that the proposed PBS allows high fabrication tolerances.

Dual-layer waveguide grating antenna with high directionality for optical phased arrays.

Development of the waveguide grating antenna with high directionality is significantly important for the optical phased array. A Si3N4/Si dual-layer structure with the grating pattern on the Si3N4 layer is proposed to improve the directionality of the waveguide grating antenna. High directionality of more than 89% can be achieved, and the length of the waveguide grating antenna is longer than 4 mm.

Gate-tunable frequency combs in graphene-nitride microresonators.

Optical frequency combs, which emit pulses of light at discrete, equally spaced frequencies, are cornerstones of modern-day frequency metrology, precision spectroscopy, astronomical observations, ultrafast optics and quantum information1-7. Chip-scale frequency combs, based on the Kerr and Raman nonlinearities in monolithic microresonators with ultrahigh quality factors8-10, have recently led to progress in optical clockwork and observations of temporal cavity solitons11-14. But the chromatic dispersion within a laser cavity, which determines the comb formation15,16, is usually difficult to tune with an electric field, whether in microcavities or fibre cavities. Such electrically dynamic control could bridge optical frequency combs and optoelectronics, enabling diverse comb outputs in one resonator with fast and convenient tunability. Arising from its exceptional Fermi-Dirac tunability and ultrafast carrier mobility17-19, graphene has a complex optical dispersion determined by its optical conductivity, which can be tuned through a gate voltage20,21. This has brought about optoelectronic advances such as modulators22,23, photodetectors 24 and controllable plasmonics25,26. Here we demonstrate the gated intracavity tunability of graphene-based optical frequency combs, by coupling the gate-tunable optical conductivity to a silicon nitride photonic microresonator, thus modulating its second- and higher-order chromatic dispersions by altering the Fermi level. Preserving cavity quality factors up to 106 in the graphene-based comb, we implement a dual-layer ion-gel-gated transistor to tune the Fermi level of graphene across the range 0.45-0.65 electronvolts, under single-volt-level control. We use this to produce charge-tunable primary comb lines from 2.3 terahertz to 7.2 terahertz, coherent Kerr frequency combs, controllable Cherenkov radiation and controllable soliton states, all in a single microcavity. We further demonstrate voltage-tunable transitions from periodic soliton crystals to crystals with defects, mapped by our ultrafast second-harmonic optical autocorrelation. This heterogeneous graphene microcavity, which combines single-atomic-layer nanoscience and ultrafast optoelectronics, will help to improve our understanding of dynamical frequency combs and ultrafast optics.

A low-frequency chip-scale optomechanical oscillator with 58 kHz mechanical stiffening and more than 100th-order stable harmonics.

For the sensitive high-resolution force- and field-sensing applications, the large-mass microelectromechanical system (MEMS) and optomechanical cavity have been proposed to realize the sub-aN/Hz1/2 resolution levels. In view of the optomechanical cavity-based force- and field-sensors, the optomechanical coupling is the key parameter for achieving high sensitivity and resolution. Here we demonstrate a chip-scale optomechanical cavity with large mass which operates at ≈77.7 kHz fundamental mode and intrinsically exhibiting large optomechanical coupling of 44 GHz/nm or more, for both optical resonance modes. The mechanical stiffening range of ≈58 kHz and a more than 100th-order harmonics are obtained, with which the free-running frequency instability is lower than 10-6 at 100 ms integration time. Such results can be applied to further improve the sensing performance of the optomechanical inspired chip-scale sensors.

Mesoscopic chaos mediated by Drude electron-hole plasma in silicon optomechanical oscillators.

Chaos has revolutionized the field of nonlinear science and stimulated foundational studies from neural networks, extreme event statistics, to physics of electron transport. Recent studies in cavity optomechanics provide a new platform to uncover quintessential architectures of chaos generation and the underlying physics. Here, we report the generation of dynamical chaos in silicon-based monolithic optomechanical oscillators, enabled by the strong and coupled nonlinearities of two-photon absorption induced Drude electron-hole plasma. Deterministic chaotic oscillation is achieved, and statistical and entropic characterization quantifies the chaos complexity at 60 fJ intracavity energies. The correlation dimension D2 is determined at 1.67 for the chaotic attractor, along with a maximal Lyapunov exponent rate of about 2.94 times the fundamental optomechanical oscillation for fast adjacent trajectory divergence. Nonlinear dynamical maps demonstrate the subharmonics, bifurcations and stable regimes, along with distinct transitional routes into chaos. This provides a CMOS-compatible and scalable architecture for understanding complex dynamics on the mesoscopic scale.

Quasi-phase-matched multispectral Kerr frequency comb.

We study a new type of Kerr frequency comb where the momentum conservation law is fulfilled by azimuthal modulation of the waveguide dispersion. The concept can expand the parametric range in which a Kerr frequency comb is obtained. In a good agreement with the theoretical analysis, we demonstrate a multispectral Kerr frequency comb covering important fiber-optic communication bands. Comb coherence and absence of a sub-comb offset are confirmed by continuous-wave heterodyne beat note and amplitude noise spectra measurements. The device can be used for achieving broadband optical frequency synthesizers and high-capacity coherent communication.