Three-electrode germanium-on-silicon avalanche photodiode array.

In this Letter, we report a bridge-connected three-electrode germanium-on-silicon (Ge-on-Si) avalanche photodiode (APD) array compatible with the complementary metal-oxide semiconductor (CMOS) process. In addition to the two electrodes on the Si substrate, a third electrode is designed for Ge. A single three-electrode APD was tested and analyzed. By applying a positive voltage on the Ge electrode, the dark current of the device can be reduced, and yet the response of the device can be increased. Under a dark current of 100 nA, as the voltage on Ge increases from 0 V to 15 V, the light responsivity is increased from 0.6 A/W to 1.17 A/W. We report, for the first time to the best of our knowledge, the near-infrared imaging properties of an array of three-electrode Ge-on-Si APDs. Experiments show that the device can be used for LiDAR imaging and low-light detection.

On-chip generation of Bessel-Gaussian beam via concentrically distributed grating arrays for long-range sensing.

Bessel beam featured with self-healing is essential to the optical sensing applications in the obstacle scattering environment. Integrated on-chip generation of the Bessel beam outperforms the conventional structure by small size, robustness, and alignment-free scheme. However, the maximum propagation distance (Zmax) provided by the existing approaches cannot support long-range sensing, and thus, it restricts its potential applications. In this work, we propose an integrated silicon photonic chip with unique structures featured with concentrically distributed grating arrays to generate the Bessel-Gaussian beam with a long propagation distance. The spot with the Bessel function profile is measured at 10.24 m without optical lenses, and the photonic chip's operation wavelength can be continuously performed from 1500 to 1630 nm. To demonstrate the functionality of the generated Bessel-Gaussian beam, we also experimentally measure the rotation speeds of a spinning object via the rotational Doppler Effect and the distance through the phase laser ranging principle. The maximum error of the rotation speed in this experiment is measured to be 0.05%, indicating the minimum error in the current reports. By the compact size, low cost, and mass production potential of the integrated process, our approach is promising to readily enable the Bessel-Gaussian beam in widespread optical communication and micro-manipulation applications.

Two-dimensional multi-layered SiN-on-SOI optical phased array with wide-scanning and long-distance ranging.

Silicon based optoelectronic integrated optical phased array is attractive owing to large-dense integration, large scanning range and CMOS compatibility. In this paper, we design and fabricate a SiN-on-SOI two-dimensional optical phased array chip. We demonstrate a two-dimensional scanning range of 96°×14.4° and 690 mW peak power of the main lobe. Additionally, we set up the time of flight (ToF) and frequency-modulated continuous-wave (FMCW) ranging systems by using this optical phased array chip, and achieve the objects detection at the range of 20 m in the ToF system and 109 m in the FMCW system, respectively.

Investigation and demonstration of a high-power handling and large-range steering optical phased array chip.

The optical power handling of an OPA scanning beam determines its targeted detection distance. So far, a limited number of investigations have been conducted on the restriction of the beam power. To the best of our knowledge, we for the first time in this paper explore the ability of the silicon photonics based OPA circuit for the high power application. A 64-channel SiN-Si based one-dimensional (1D) OPA chip has been designed to handle high beam power to achieve large scanning range. The chip was fabricated on the standard silicon photonics platform. The main lobe power of our chip can reach 720 mW and its peak side-lobe level (PSLL) is -10.33 dB. We obtain a wide scanning range of 110° in the horizontal direction at 1550 nm wavelength, with a compressed longitudinal divergence angle of each scanning beam of 0.02°.

Unidirectional large-scale waveguide grating with uniform radiation for optical phased array.

Two novel waveguide gratings for optical phased array transmitters are investigated. By offsetting the grating structures along the waveguide on the upper and lower surfaces of the silicon nitride (Si3N4) waveguide, the dual-level chain and dual-level fishbone structures can achieve 95% of unidirectional radiation with a single Si3N4 layer by design. With apodized perturbation along the gratings, both structures can achieve uniform radiation without compromising the unidirectional radiation performance. In experiment, both demonstrate ∼ 80-90% unidirectionality. With further analysis, it is found that the dual-level fishbone structure is more feasible and robust to process variations in uniform radiation.