Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core-Shell Nanowires.

We demonstrate the epitaxial coating of GaN NWs with an epitaxial ZnO shell by atomic layer deposition at 300 °C. Scanning transmission electron microscopy proves a sharp and defect-free coherent interface. The strain in the core-shell structure due to the lattice mismatch and different thermal expansion coefficients of GaN and ZnO was analyzed using 4D-STEM strain mapping and Raman spectroscopy and compared to theoretical calculations. The results highlight the outstanding advantages of epitaxial shell growth using atomic layer deposition, e.g., conformal coating and precise thickness control.

Sparked ZnO nanoparticles-based electrochemical sensor for onsite determination of glyphosate residues.

Glyphosate (N-(phosphonomethyl)glycine) is well known nonselective and broad-spectrum herbicide that has been extensively used in agricultural areas around the world to increase agricultural productivity. However, the utilization of glyphosate can cause environmental contamination and health problems. Therefore, the detection of glyphosate with a fast, low-cost, and portable sensor is still important. In this work, the electrochemical sensor has been developed by modifying of working surface on the screen-printed silver electrode (SPAgE) with a mixtures solution between zinc oxide nanoparticles (ZnO-NPs) and poly(diallyldimethylammonium chloride) (PDDA) by the drop-casting process. The ZnO-NPs have been prepared based on a sparking method by using pure zinc wires. The ZnO-NPs/PDDA/SPAgE sensor shows a wide range of glyphosate detection (0µM-5 mM). The limit of detection of ZnO-NPs/PDDA/SPAgE is 2.84µM. The ZnO-NPs/PDDA/SPAgE sensor exhibits high selective towards glyphosate with minimal interference from other commonly used herbicides including paraquat, butachlor-propanil and glufosinate-ammonium. Furthermore, the ZnO-NPs/PDDA/SPAgE sensor demonstrates a good estimation of glyphosate concentration in real samples such as green tea, corn juice and mango juice.

High-Resolution Nanoanalytical Insights into Particle Formation in SnO2/ZnO Core/Shell Nanowire Lithium-Ion Battery Anodes.

Tin oxide (SnO2)/zinc oxide (ZnO) core/shell nanowires as anode materials in lithium-ion batteries (LIBs) were investigated using a combination of classical electrochemical analysis and high-resolution electron microscopy to correlate structural changes and battery performance. The combination of the conversion materials SnO2 and ZnO is known to have higher storage capacities than the individual materials. We report the expected electrochemical signals of SnO2 and ZnO for SnO2/ZnO core/shell nanowires as well as unexpected structural changes in the heterostructure after cycling. Electrochemical measurements based on charge/discharge, rate capability, and electrochemical impedance spectroscopy showed electrochemical signals for SnO2 and ZnO and partial reversibility of lithiation and delithiation. We find an initially 30% higher capacity for the SnO2/ZnO core/shell NW heterostructure compared to the ZnO-coated substrate without the SnO2 NWs. However, electron microscopy characterization revealed pronounced structural changes upon cycling, including redistribution of Sn and Zn, formation of ∼30 nm particles composed of metallic Sn, and a loss of mechanical integrity. We discuss these changes in terms of the different reversibilities of the charge reactions of both SnO2 and ZnO. The results show stability limitations of SnO2/ZnO heterostructure LIB anodes and offer guidelines on material design for advanced next-generation anode materials for LIBs.

Effects of field enhanced charge transfer on the luminescence properties of Si/SiO2 superlattices.

The effect of an externally applied electric field on exciton splitting and carrier transport was studied on 3.5 nm Si nanocrystals embedded in SiO2 superlattices with barrier oxide thicknesses varied between 2 and 4 nm. Through a series of photoluminescence measurements performed at both room temperature and with liquid N2 cooling, it was shown that the application of an electric field resulted in a reduction of luminescence intensity due to exciton splitting and charging of nanocrystals within the superlattices. This effect was found to be enhanced when surface defects at the Si/SiO2 interface were not passivated by H2 treatment and severely reduced for inter layer barrier oxide thicknesses above 3 nm. The findings point to the surface defects assisting in carrier transport, lowering the energy required for exciton splitting. Said enhancement was found to be diminished at low temperatures due to the freezing-in of phonons. We propose potential device design parameters for photon detection and tandem solar cell applications utilizing the quantum confinement effect based on the findings of the present study.

Transition from freestanding SnO2 nanowires to laterally aligned nanowires with a simulation-based experimental design.

In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced process pressure will result in a preferred laterally aligned nanowire growth. Furthermore, increasing the volumetric flow leads to a higher species dilution. Based on our numerical results, we were able to successfully grow laterally aligned SnO2 nanowires out of gold film edges and gold nanoparticles on a-plane sapphire substrates. In our experiments a horizontal 2-zone tube furnace was used. The generation of Sn gas was achieved by a carbothermal reduction of SnO2 powder. However, we observed no elongation of the nanowire length with an increase of the process time. Nevertheless, an alternating gas exchange between an inert gas (Ar) and an oxygen-containing process atmosphere yielded an elongation of the laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange.

Influence of Al2O3 Nanoparticle Addition on a UV Cured Polyacrylate for 3D Inkjet Printing.

The brittleness of acrylic photopolymers, frequently used in 3D Inkjet printing, limits their utilization in structural applications. In this study, a process was developed for the production and characterization of an alumina-enhanced nanocomposite with improved mechanical properties for Inkjet printing. Ceramic nanoparticles with an average primary particle size (APPS) of 16 nm and 31 nm, which was assessed via high-resolution scanning electron microscopy (HRSEM), were functionalized with 3.43 and 5.59 mg/m² 3-(trimethoxysilyl)propyl methacrylate (MPS), respectively, while being ground in a ball mill. The suspensions of the modified fillers in a newly formulated acrylic mixture showed viscosities of 14 and 7 mPa∙s at the printing temperature of 60 °C. Ink-jetting tests were conducted successfully without clogging the printing nozzles. Tensile tests of casted specimens showed an improvement of the tensile strength and elongation at break in composites filled with 31 nm by 10.7% and 74.9%, respectively, relative to the unfilled polymer.

Electron Beam Effects on Oxide Thin Films-Structure and Electrical Property Correlations.

In situ transmission electron microscope (TEM) characterization techniques provide valuable information on structure-property correlations to understand the behavior of materials at the nanoscale. However, understanding nanoscale structures and their interaction with the electron beam is pivotal for the reliable interpretation of in situ/ex situ TEM studies. Here, we report that oxides commonly used in nanoelectronic applications, such as transistor gate oxides or memristive devices, are prone to electron beam induced damage that causes small structural changes even under very low dose conditions, eventually changing their electrical properties as examined via in situ measurements. In this work, silicon, titanium, and niobium oxide thin films are used for in situ TEM electrical characterization studies. The electron beam induced reduction of the oxides turns these insulators into conductors. The conductivity change is reversible by exposure to air, supporting the idea of electron beam reduction of oxides as primary damage mechanism. Through these measurements we propose a limit for the critical dose to be considered for in situ scanning electron microscopy and TEM characterization studies.

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride.

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current-voltage (I-V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.

Changes of the absorption cross section of Si nanocrystals with temperature and distance.

The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under modulated pumping. We clearly demonstrate that roughly doubling the barrier thickness (from ca. 1 to 2.2 nm) induces a decrease of the ACS by a factor of 1.5. An optimum separation barrier thickness of ca. 1.6 nm is calculated to maximize the PL intensity yield. This large variation of ACS values with barrier thickness is attributed to a modulation of either defect population states or of the efficiency of energy transfer between confined NC layers. An exponential decrease of the ACS with decreasing temperature down to 120 K can be explained by smaller occupation number of phonons and expansion of the band gap of Si NCs at low temperatures. This study clearly shows that the ACS of Si NCs cannot be considered as independent on experimental conditions and sample parameters.

Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects.

Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B-concentration exceeds ~1 at%, the luminescence quantum yield is significantly quenched, whereas electrical measurements do not reveal free carriers. This observation suggests a photoluminescence quenching mechanism based on B-induced defect states. By means of density functional theory calculations, we prove that B creates multiple states in the bandgap of Si and SiO2. We conclude that non-percolated ultra-small Si nanocrystals cannot be efficiently B-doped.

Label-free SnO2 nanowire FET biosensor for protein detection.

Novel tin oxide field-effect-transistors (SnO2 NW-FET) for pH and protein detection applicable in the healthcare sector are reported. With a SnO2 NW-FET the proof-of-concept of a bio-sensing device is demonstrated using the carrier transport control of the FET channel by a (bio-) liquid modulated gate. Ultra-thin Al2O3 fabricated by a low temperature atomic layer deposition (ALD) process represents a sensitive layer to H+ ions safeguarding the nanowire at the same time. Successful pH sensitivity is demonstrated for pH ranging from 3 to 10. For protein detection, the SnO2 NW-FET is functionalized with a receptor molecule which specifically interacts with the protein of interest to be detected. The feasibility of this approach is demonstrated via the detection of a biotinylated protein using a NW-FET functionalized with streptavidin. An immediate label-free electronic read-out of the signal is shown. The well-established Enzyme-Linked Immunosorbent Assay (ELISA) method is used to determine the optimal experimental procedure which would enable molecular binding events to occur while being compatible with a final label-free electronic read-out on a NW-FET. Integration of the bottom-up fabricated SnO2 NW-FET pH- and biosensor into a microfluidic system (lab-on-a-chip) allows the automated analysis of small volumes in the 400 µl range as would be desired in portable on-site point-of-care (POC) devices for medical diagnosis.

Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size.

Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carriers, as required to control electronic properties, is controversial. Here, we correlate structural, optical and electrical results of size-controlled, P-incorporating Si nanocrystals with simulation data to address the role of interstitial and substitutional P-atoms. Whereas atom probe tomography proves that P-incorporation scales with nanocrystal size, luminescence spectra indicate that even nanocrystals with several P-atoms still emit light. Current-voltage measurements demonstrate that majority carriers must be generated by field emission to overcome the P-ionization energies of 110-260 meV. In absence of electrical fields at room temperature, no significant free carrier densities are present, which disproves the concept of luminescence quenching via Auger recombination. Instead, we propose non-radiative recombination via interstitial-P induced states as quenching mechanism. Since only substitutional-P provides occupied states near the Si conduction band, we use the electrically measured carrier density to derive formation energies of ~400 meV for P-atoms on Si nanocrystal lattice sites. Based on these results we conclude that ultrasmall Si nanovolumes cannot be efficiently P-doped.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide.

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements.

Quasi-Direct Optical Transitions in Silicon Nanocrystals with Intensity Exceeding the Bulk.

Comparison of the measured absolute absorption cross section on a per Si atom basis of plasma-synthesized Si nanocrystals (NCs) with the absorption of bulk crystalline Si shows that while near the band edge the NC absorption is weaker than the bulk, yet above ∼ 2.2 eV the NC absorbs up to 5 times more than the bulk. Using atomistic screened pseudopotential calculations we show that this enhancement arises from interface-induced scattering that enhances the quasi-direct, zero-phonon transitions by mixing direct Γ-like wave function character into the indirect X-like conduction band states, as well as from space confinement that broadens the distribution of wave functions in k-space. The absorption enhancement factor increases exponentially with decreasing NC size and is correlated with the exponentially increasing direct Γ-like wave function character mixed into the NC conduction states. This observation and its theoretical understanding could lead to engineering of Si and other indirect band gap NC materials for optical and optoelectronic applications.

A Simple Approach for Molecular Controlled Release based on Atomic Layer Deposition Hybridized Organic-Inorganic Layers.

On-demand release of bioactive substances with high spatial and temporal control offers ground-breaking possibilities in the field of life sciences. However, available strategies for developing such release systems lack the possibility of combining efficient control over release with adequate storage capability in a reasonably compact system. In this study we present a new approach to target this deficiency by the introduction of a hybrid material. This organic-inorganic material was fabricated by atomic layer deposition of ZnO into thin films of polyethylene glycol, forming the carrier matrix for the substance to be released. Sub-surface growth mechanisms during this process converted the liquid polymer into a solid, yet water-soluble, phase. This layer permits extended storage for various substances within a single film of only a few micrometers in thickness, and hence demands minimal space and complexity. Improved control over release of the model substance Fluorescein was achieved by coating the hybrid material with a conducting polymer film. Single dosage and repetitive dispensing from this system was demonstrated. Release was controlled by applying a bias potential of ± 0.5 V to the polymer film enabling or respectively suppressing the expulsion of the model drug. In vitro tests showed excellent biocompatibility of the presented system.

Location and Electronic Nature of Phosphorus in the Si Nanocrystal--SiO2 System.

Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO2 system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO2 and SiNC/SiO2 superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO2. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P.

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes.

We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

Dielectrophoretic investigation of Bi2Te3 nanowires-a microfabricated thermoelectric characterization platform for measuring the thermoelectric and structural properties of single nanowires.

In this article a microfabricated thermoelectric nanowire characterization platform to investigate the thermoelectric and structural properties of single nanowires is presented. By means of dielectrophoresis (DEP), a method to manipulate and orient nanowires in a controlled way to assemble them onto our measurement platform is introduced. The thermoelectric platform fabricated with optimally designed DEP electrodes results in a yield of nanowire assembly of approximately 90% under an applied peak-to-peak ac signal Vpp = 10 V and frequency f = 20 MHz within a series of 200 experiments. Ohmic contacts between the aligned single nanowire and the electrodes on the platform are established by electron beam-induced deposition. The Seebeck coefficient and electrical conductivity of electrochemically synthesized Bi2Te3 nanowires are measured to be -51 µV K(-1) and (943 ± 160)/(Ω(-1) cm(-1)), respectively. Chemical composition and crystallographic structure are obtained using transmission electron microscopy. The selected nanowire is observed to be single crystalline over its entire length and no grain boundaries are detected. At the surface of the nanowire, 66.1 ± 1.1 at.% Te and 34.9 ± 1.1 at.% Bi are observed. In contrast, chemical composition of 64.2 at.% Te and 35.8 at.% Bi is detected in the thick center of the nanowire.

Ultra-long zinc oxide nanowires and boron doping based on ionic liquid assisted thermal chemical vapor deposition growth.

Ionic liquid assisted growth of ultra-long ZnO nanowires from thermal chemical vapor deposition and the incorporation of dopants into the ZnO lattice have been investigated. We find that decomposed components of the ionic liquid at higher temperatures facilitate ultra-long vapor-liquid-solid ZnO nanowires that exhibit an unusual a-axis orientation. In particular, the ionic liquid BMImBF4 has been studied and the mechanism of the nanowire growth model in response to the use of the ionic liquid has been explained. We show that boron which is part of the investigated ionic liquid incorporates into the ZnO lattice and serves as a donor source. Electrical measurements were conducted and have shown an enhanced electrical conductivity (ρ = 0.09 Ω cm) when using the ionic liquid assisted growth approach. This work represents a step towards the controlled doping for designing future nanowire devices.

Atomic-layer-deposition alumina induced carbon on porous Ni(x)Co(1-x)O nanonets for enhanced pseudocapacitive and Li-ion storage performance.

A unique composite nanonet of metal oxide@carbon interconnected sheets is obtained by atomic layer deposition (ALD)-assisted fabrication. In this nanonet structure, mesoporous metal oxide nanosheets are covered by a layer of amorphous carbon nanoflakes. Specifically, quasi-vertical aligned and mesoporous Ni(x)Co(1-x)O nanosheets are first fabricated directly on nickel foam substrates by a hydrothermal method. Then, an ALD-enabled carbon coating method is applied for the growth of carbon nanoflakes on the surface of the nanosheets. The thus formed 3D hierarchical structure of Ni(x)Co(1-x)O@carbon composite flakes have a higher surface area, better electrical conductivity and structure stability than the bare Ni(x)Co(1-x)O. The application of such composite nanomaterials is demonstrated as electrodes for a supercapacitor and a lithium-ion battery. In both tests, the composite electrode shows enhancement in capacity and cycling stability. This effective composite nanostructure design of metal oxides@carbon flakes could provide a promising method to construct high-performance materials for energy and environment applications.