RESUMEN
In this study, a 3 × 3 blue micro-LED array with a pixel size of 10 × 10 µm2 and a pitch of 15 µm was fabricated on an epilayer grown on a sapphire substrate using metalorganic chemical vapor deposition technology. The fabrication process involved photolithography, wet and dry etching, E-beam evaporation, and ion implantation technology. Arsenic multi-energy implantation was utilized to replace the mesa etching for electrical isolation, where the implantation depth increased with the average energy. Different ion depth profiles had varying effects on electrical properties, such as forward current and leakage currents, potentially causing damage to the n-GaN layer and increasing the series resistance of the LEDs. As the implantation depth increased, the light output power and peak external quantum efficiency of the LEDs also increased, improving from 5.33 to 9.82%. However, the efficiency droop also increased from 46.3 to 48.6%.
RESUMEN
Although semiconductor metal oxide-based sensors are promising for gas sensing, low-power and room temperature operation (24 ± 1 °C) remains desirable for practical applications particularly considering the request of energy saving or net zero emission. In this study, we demonstrate a Au/SnO2-based ultrasensitive H2S gas sensor with a limit of detection (LOD) of 2 ppb, operating at very low voltages (0.05 to 0.5 V) at room temperature. The Au/SnO2-based sensor showed approximately 7 times higher response (the ratio of change in the current to initial current) of â¼270% and 4 times faster recovery (126 s) compared to the pure SnO2-based sensor when exposed to 500 ppb H2S gas concentration at 0.5 V operating voltage at relative humidity (RH) 17.5 ± 2.5%. The enhancement can be attributed to the catalytic characteristics of AuNPs, increasing the number of adsorbed oxygen species on sensing material surfaces. Additionally, AuNPs aid in forming flower-petal-like Au/SnO2 nanostructures, offering a larger surface area and more active sites for H2S sensing. Moreover, at low voltage (<1 V), the localized dipoles at the Au/SnO2 interface may further enhance the absorption of polar oxygen molecules and hence promote the reaction between H2S and oxygen species. This low-power, ultrasensitive H2S sensor outperforms high-powered alternatives, making it ideal for environmental, food safety, and healthcare applications.