RESUMEN
The effect of the geometric parameters on the flow and heat transfer characteristics of a double-layer U-shape microchannel heat sink (DL-MCHS) for a high-power diode laser was investigated in this work. FLUENT 19.2 based on the finite volume method was employed to analyze the flow and heat transfer performance of DL-MCHS. A single variable approach was used to fully research the impact of different parameters (the number of channels, the channel cross-sectional shape, and the aspect ratio) on the temperature distribution, pressure drop, and thermal resistance of the DL-MCHS. The rectangular DL-MCHS heat transfer performance and pressure drop significantly increased with the rise in the channel's aspect ratio due to there being a larger wet perimeter and convective heat transfer area. By comparing the thermal resistance of the DL-MCHS at the same power consumption, it was found that the rectangular DL-MCHS with an aspect ratio in the range of 5.1180-6.389 had the best overall performance. With the same cross-sectional area and hydraulic diameter (AC = 0.36 mm, Dh = 0.417 mm), the thermal resistance of the trapezoidal microchannel heat sink was 32.14% and 42.42% lower than that of the triangular and rectangular ones, respectively, under the condition that the pumping power (Wpp) was 0.2 W. Additionally, the thermal resistance was reduced with the increment of the number of channels inside the DL-MCHS, but this would induce an increased pressure drop. Thus, the channel number has an optimal range, which is between 50 and 80 for the heat sinks in this study. Our study served as a simulation foundation for the semiconductor laser double-layer U-shaped MCHS optimization method using geometric parameters.
RESUMEN
An improvement in random lasers based on a colloidal quantum dot (QD)/graphene-doped polymer was observed and attributed to multiple light-scattering and graphene surface plasmon resonance. The emission characteristics of quantum dots doped with graphene oxide and reduced graphene oxide were compared. The QD/reduced graphene oxide hybrid exhibited a lower laser emission threshold (~460 µJ/cm2). The emission modes and thresholds were strongly dependent on both the graphene doping concentration and the external temperature. Decreased plasmon coupling was the primary reason for lower QD/graphene laser emission with increasing temperature. The optimum reduced graphene oxide concentration was 0.2 wt.%. This work provides a practical approach to optimizing the threshold and stability of random laser devices, with potential applications in displays, sensors, and anti-counterfeiting labels.
