Inhomogeneous high temperature melting and decoupling of charge density waves in spin-triplet superconductor UTe2.

Charge, spin and Cooper-pair density waves have now been widely detected in exotic superconductors. Understanding how these density waves emerge - and become suppressed by external parameters - is a key research direction in condensed matter physics. Here we study the temperature and magnetic-field evolution of charge density waves in the rare spin-triplet superconductor candidate UTe2 using scanning tunneling microscopy/spectroscopy. We reveal that charge modulations composed of three different wave vectors gradually weaken in a spatially inhomogeneous manner, while persisting to surprisingly high temperatures of 10-12 K. We also reveal an unexpected decoupling of the three-component charge density wave state. Our observations match closely to the temperature scale potentially related to short-range magnetic correlations, providing a possible connection between density waves observed by surface probes and intrinsic bulk features. Importantly, charge density wave modulations become suppressed with magnetic field both below and above superconducting Tc in a comparable manner. Our work points towards an intimate connection between hidden magnetic correlations and the origin of the unusual charge density waves in UTe2.

Spin-polarized imaging of the antiferromagnetic structure and field-tunable bound states in kagome magnet FeSn.

Kagome metals are an exciting playground for the explorations of novel phenomena at the intersection of topology, electron correlations and magnetism. The family of FeSn-based kagome magnets in particular attracted a lot of attention for simplicity of the layered crystal structure and tunable topological electronic band structure. Despite a significant progress in understanding their bulk properties, surface electronic and magnetic structures are yet to be fully explored in many of these systems. In this work, we focus on a prototypical kagome metal FeSn. Using a combination of spin-averaged and spin-polarized scanning tunneling microscopy, we provide the first atomic-scale visualization of the layered antiferromagnetic structure at the surface of FeSn. In contrast to the field-tunable electronic structure of cousin material Fe3Sn2 that is a ferromagnet, we find that electronic density-of-states of FeSn is robust to the application of external magnetic field. Interestingly, despite the field insensitive electronic band structure, FeSn exhibits bound states tied to specific impurities with large effective moments that strongly couple to the magnetic field. Our experiments provide microscopic insights necessary for theoretical modeling of FeSn and serve as a spring board for spin-polarized measurements of topological magnets in general.

Imaging antiferromagnetic domain fluctuations and the effect of atomic scale disorder in a doped spin-orbit Mott insulator.

Correlated oxides can exhibit complex magnetic patterns. Understanding how magnetic domains form in the presence of disorder and their robustness to temperature variations has been of particular interest, but atomic scale insight has been limited. We use spin-polarized scanning tunneling microscopy to image the evolution of spin-resolved modulations originating from antiferromagnetic (AF) ordering in a spin-orbit Mott insulator perovskite iridate Sr3Ir2O7 as a function of chemical composition and temperature. We find that replacing only several percent of lanthanum for strontium leaves behind nanometer-scale AF puddles clustering away from lanthanum substitutions preferentially located in the middle strontium oxide layer. Thermal erasure and reentry into the low-temperature ground state leads to a spatial reorganization of the AF puddles, which nevertheless maintain scale-invariant fractal geometry in each configuration. Our experiments reveal multiple stable AF configurations at low temperature and shed light onto spatial fluctuations of the AF order around atomic scale disorder in electron-doped Sr3Ir2O7.

Cascade of correlated electron states in the kagome superconductor CsV3Sb5.

The kagome lattice of transition metal atoms provides an exciting platform to study electronic correlations in the presence of geometric frustration and nontrivial band topology1-18, which continues to bear surprises. Here, using spectroscopic imaging scanning tunnelling microscopy, we discover a temperature-dependent cascade of different symmetry-broken electronic states in a new kagome superconductor, CsV3Sb5. We reveal, at a temperature far above the superconducting transition temperature Tc ~ 2.5 K, a tri-directional charge order with a 2a0 period that breaks the translation symmetry of the lattice. As the system is cooled down towards Tc, we observe a prominent V-shaped spectral gap opening at the Fermi level and an additional breaking of the six-fold rotational symmetry, which persists through the superconducting transition. This rotational symmetry breaking is observed as the emergence of an additional 4a0 unidirectional charge order and strongly anisotropic scattering in differential conductance maps. The latter can be directly attributed to the orbital-selective renormalization of the vanadium kagome bands. Our experiments reveal a complex landscape of electronic states that can coexist on a kagome lattice, and highlight intriguing parallels to high-Tc superconductors and twisted bilayer graphene.

Nanoscale decoupling of electronic nematicity and structural anisotropy in FeSe thin films.

In a material prone to a nematic instability, anisotropic strain in principle provides a preferred symmetry-breaking direction for the electronic nematic state to follow. This is consistent with experimental observations, where electronic nematicity and structural anisotropy typically appear hand-in-hand. In this work, we discover that electronic nematicity can be locally decoupled from the underlying structural anisotropy in strain-engineered iron-selenide (FeSe) thin films. We use heteroepitaxial molecular beam epitaxy to grow FeSe with a nanoscale network of modulations that give rise to spatially varying strain. We map local anisotropic strain by analyzing scanning tunneling microscopy topographs, and visualize electronic nematic domains from concomitant spectroscopic maps. While the domains form so that the energy of nemato-elastic coupling is minimized, we observe distinct regions where electronic nematic ordering fails to flip direction, even though the underlying structural anisotropy is locally reversed. The findings point towards a nanometer-scale stiffness of the nematic order parameter.

A cleanroom in a glovebox.

The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use the equipment for creating and characterizing materials, calls for a dramatic reduction in the cost to create and operate such facilities. To this end, we present our cleanroom-in-a-glovebox, a system that allows for the fabrication and characterization of devices in an inert argon atmosphere. We demonstrate the ability to perform a wide range of characterization as well as fabrication steps, without the need for a dedicated room, all in an argon environment. Finally, we discuss the custom-built antechamber attached to the back of the glovebox. This antechamber allows the glovebox to interface with ultra-high vacuum equipment such as molecular-beam epitaxy and scanning tunneling microscopy.

Charge-stripe crystal phase in an insulating cuprate.

High-temperature (high-Tc) superconductivity in cuprates arises from carrier doping of an antiferromagnetic Mott insulator. This carrier doping leads to the formation of electronic liquid-crystal phases1. The insulating charge-stripe crystal phase is predicted to form when a small density of holes is doped into the charge-transfer insulator state1-3, but this phase is yet to be observed experimentally. Here, we use surface annealing to extend the accessible doping range in Bi-based cuprates and realize the lightly doped charge-transfer insulating state of the cuprate Bi2Sr2CaCu2O8+x. In this insulating state with a charge transfer gap on the order of ~1 eV, our spectroscopic imaging scanning tunnelling microscopy measurements provide strong evidence for a unidirectional charge-stripe order with a commensurate 4a0 period along the Cu-O-Cu bond. Notably, this insulating charge-stripe crystal phase develops before the onset of the pseudogap and formation of the Fermi surface. Our work provides fresh insight into the microscopic origin of electronic inhomogeneity in high-Tc cuprates.

Atomic-scale strain manipulation of a charge density wave.

A charge density wave (CDW) is one of the fundamental instabilities of the Fermi surface occurring in a wide range of quantum materials. In dimensions higher than one, where Fermi surface nesting can play only a limited role, the selection of the particular wavevector and geometry of an emerging CDW should in principle be susceptible to controllable manipulation. In this work, we implement a simple method for straining materials compatible with low-temperature scanning tunneling microscopy/spectroscopy (STM/S), and use it to strain-engineer CDWs in 2H-NbSe2 Our STM/S measurements, combined with theory, reveal how small strain-induced changes in the electronic band structure and phonon dispersion lead to dramatic changes in the CDW ordering wavevector and geometry. Our work unveils the microscopic mechanism of a CDW formation in this system, and can serve as a general tool compatible with a range of spectroscopic techniques to engineer electronic states in any material where local strain or lattice symmetry breaking plays a role.

Interplay of orbital effects and nanoscale strain in topological crystalline insulators.

Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have been implicated in generating novel electronic and structural phases. Here we show how the orbital nature of bands can result in non-trivial effects of strain on band structure. We use scanning-tunneling microscopy to study the effects of strain on the electronic structure of a heteroepitaxial thin film of a topological crystalline insulator, SnTe. By studying the effects of uniaxial strain on the band structure we find a surprising effect where strain applied in one direction has the most pronounced influence on the band structure along the perpendicular direction. Our theoretical calculations indicate that this effect arises from the orbital nature of the conduction and valence bands. Our results imply that a microscopic model capturing strain effects must include a consideration of the orbital nature of bands.

Etching of Cr tips for scanning tunneling microscopy of cleavable oxides.

We report a detailed three-step roadmap for the fabrication and characterization of bulk Cr tips for spin-polarized scanning tunneling microscopy. Our strategy uniquely circumvents the need for ultra-high vacuum preparation of clean surfaces or films. First, we demonstrate the role of ex situ electrochemical etch parameters on Cr tip apex geometry, using scanning electron micrographs of over 70 etched tips. Second, we describe the suitability of the in situ cleaved surface of the layered antiferromagnet La1.4Sr1.6Mn2O7 to evaluate the spin characteristics of the Cr tip, replacing the ultra-high vacuum-prepared test samples that have been used in prior studies. Third, we outline a statistical algorithm that can effectively delineate closely spaced or irregular cleaved step edges, to maximize the accuracy of step height and spin-polarization measurements.

Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films.

The unique crystalline protection of the surface states in topological crystalline insulators has led to a series of predictions of strain-generated phenomena, from the appearance of pseudo-magnetic fields and helical flat bands to the tunability of Dirac surface states by strain that may be used to construct 'straintronic' nanoswitches. However, the practical realization of this exotic phenomenology via strain engineering is experimentally challenging and is yet to be achieved. Here, we have designed an experiment to not only generate and measure strain locally, but also to directly measure the resulting effects on Dirac surface states. We grew heteroepitaxial thin films of topological crystalline insulator SnTe in situ and measured them using high-resolution scanning tunnelling microscopy to determine picoscale changes in the atomic positions, which reveal regions of both tensile and compressive strain. Simultaneous Fourier-transform scanning tunnelling spectroscopy was then used to determine the effects of strain on the Dirac electrons. We find that strain continuously tunes the momentum space position of the Dirac points, consistent with theoretical predictions. Our work demonstrates the fundamental mechanism necessary for using topological crystalline insulators in strain-based applications.

Nanoscale determination of the mass enhancement factor in the lightly doped bulk insulator lead selenide.

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties that could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale level. This opens up a new pathway for investigating the local effects of doping and strain on the mass enhancement factor.

Dirac mass generation from crystal symmetry breaking on the surfaces of topological crystalline insulators.

The tunability of topological surface states and controllable opening of the Dirac gap are of fundamental and practical interest in the field of topological materials. In the newly discovered topological crystalline insulators (TCIs), theory predicts that the Dirac node is protected by a crystalline symmetry and that the surface state electrons can acquire a mass if this symmetry is broken. Recent studies have detected signatures of a spontaneously generated Dirac gap in TCIs; however, the mechanism of mass formation remains elusive. In this work, we present scanning tunnelling microscopy (STM) measurements of the TCI Pb1-xSnxSe for a wide range of alloy compositions spanning the topological and non-topological regimes. The STM topographies reveal a symmetry-breaking distortion on the surface, which imparts mass to the otherwise massless Dirac electrons-a mechanism analogous to the long sought-after Higgs mechanism in particle physics. Interestingly, the measured Dirac gap decreases on approaching the trivial phase, whereas the magnitude of the distortion remains nearly constant. Our data and calculations reveal that the penetration depth of Dirac surface states controls the magnitude of the Dirac mass. At the limit of the critical composition, the penetration depth is predicted to go to infinity, resulting in zero mass, consistent with our measurements. Finally, we discover the existence of surface states in the non-topological regime, which have the characteristics of gapped, double-branched Dirac fermions and could be exploited in realizing superconductivity in these materials.

Nanoscale interplay of strain and doping in a high-temperature superconductor.

The highest-temperature superconductors are electronically inhomogeneous at the nanoscale, suggesting the existence of a local variable that could be harnessed to enhance the superconducting pairing. Here we report the relationship between local doping and local strain in the cuprate superconductor Bi(2)Sr(2)CaCu(2)O(8+x). We use scanning tunneling microscopy to discover that the crucial oxygen dopants are periodically distributed in correlation with local strain. Our picoscale investigation of the intraunit-cell positions of all oxygen dopants provides essential structural input for a complete microscopic theory.

Interplay of chemical disorder and electronic inhomogeneity in unconventional superconductors.

Many of today's forefront materials, such as high-Tc superconductors, doped semiconductors, and colossal magnetoresistance materials, are structurally, chemically and/or electronically inhomogeneous at the nanoscale. Although inhomogeneity can degrade the utility of some materials, defects can also be advantageous. Quite generally, defects can serve as nanoscale probes and facilitate quasiparticle scattering used to extract otherwise inaccessible electronic properties. In superconductors, non-stoichiometric dopants are typically necessary to achieve a high transition temperature, while both structural and chemical defects are used to pin vortices and increase critical current. Scanning tunneling microscopy (STM) has proven to be an ideal technique for studying these processes at the atomic scale. In this perspective, we present an overview of STM studies on chemical disorder in unconventional superconductors, and discuss how dopants, impurities and adatoms may be used to probe, pin or enhance the intrinsic electronic properties of these materials.

Imaging the impact of single oxygen atoms on superconducting Bi(2+y)Sr(2-y)CaCu2O(8+x).

High-temperature cuprate superconductors display unexpected nanoscale inhomogeneity in essential properties such as pseudogap energy, Fermi surface, and even superconducting critical temperature. Theoretical explanations for this inhomogeneity have ranged from chemical disorder to spontaneous electronic phase separation. We extend the energy range of scanning tunneling spectroscopy on Bi(2+y)Sr(2-y)CaCu(2)O(8+x), allowing a complete mapping of two types of interstitial oxygen dopants and vacancies at the apical oxygen site. We show that the nanoscale spatial variations in the pseudogap states are correlated with disorder in these dopant concentrations, particularly that of apical oxygen vacancies.

Scanning tunnelling microscopy imaging of symmetry-breaking structural distortion in the bismuth-based cuprate superconductors.

A complicating factor in unravelling the theory of high-temperature (high-T(c)) superconductivity is the presence of a 'pseudogap' in the density of states, the origin of which has been debated since its discovery. Some believe the pseudogap is a broken symmetry state distinct from superconductivity, whereas others believe it arises from short-range correlations without symmetry breaking. A number of broken symmetries have been imaged and identified with the pseudogap state, but it remains crucial to disentangle any electronic symmetry breaking from the pre-existing structural symmetry of the crystal. We use scanning tunnelling microscopy to observe an orthorhombic structural distortion across the cuprate superconducting Bi(2)Sr(2)Ca(n-1)Cu(n)O(2n+4+x) (BSCCO) family tree, which breaks two-dimensional inversion symmetry in the surface BiO layer. Although this inversion-symmetry-breaking structure can impact electronic measurements, we show from its insensitivity to temperature, magnetic field and doping, that it cannot be the long-sought pseudogap state. To detect this picometre-scale variation in lattice structure, we have implemented a new algorithm that will serve as a powerful tool in the search for broken symmetry electronic states in cuprates, as well as in other materials.