RESUMEN
Magnetic element doped Cd3As2 Dirac semimetal has attracted great attention for revealing the novel quantum phenomena and infrared opto-electronic applications. In this work, the circular photogalvanic effect (CPGE) was investigated at various temperatures for the Ni-doped Cd3As2 films which were grown on GaAs(111)B substrate by molecular beam epitaxy. The CPGE current generation was found to originate from the structural symmetry breaking induced by the lattice strain and magnetic doping in the Ni-doped Cd3As2 films, similar to that in the undoped ones. However, the CPGE current generated in the Ni-doped Cd3As2 films was approximately two orders of magnitude smaller than that in the undoped one under the same experimental conditions and exhibited a complex temperature variation. While the CPGE current in the undoped film showed a general increase with rising temperature. The greatly reduced CPGE current generation efficiency and its complex variation with temperature in the Ni-doped Cd3As2 films was discussed to result from the efficient capture of photo-generated carriers by the deep-level magnetic impurity bands and enhanced momentum relaxation caused by additional strong impurity scattering when magnetic dopants were introduced.
RESUMEN
Coherent longitudinal acoustic phonon (CAP) generation in epitaxial Dirac semimetal Cd3As2 films with different thicknesses was investigated by a time-resolved reflectance technique. The short-lived weak CAP oscillations can be observed only in the thicker Cd3As2 films, and their central frequency of 0.039 THz has no dependence on sample thickness, but is nearly inversely proportional to the probe wavelength. For the 20 nm thin film, the observed long-lived CAP with a central frequency of 0.049 THz is generated in the GaAs(111)B substrate underneath. A sound velocity of 3800 m/s for the Cd3As2 film and 5360 m/s for the GaAs(111)B substrate is thus deduced. In addition, the opposite CAP amplitude and lifetime dependence on temperature further confirms the electronic and thermal stress origination of CAP generated in GaAs(111)B and Cd3As2 film, respectively, based on the propagating strain pulse model. The central frequency of CAP is found to be stable with increasing pumping fluence and temperature, which makes Cd3As2 a potential material for thermoelectric device applications.
RESUMEN
Dirac semimetal (DSM) Cd3As2 has drawn great attention for exploring the novel quantum phenomena and high-speed optoelectronic applications. The circular photogalvanic effect (CPGE) current, resulting from the optically-excited spin orientation transport, was theoretically predicted to vanish in an ideal Dirac system due to the symmetric photoexcitation about the Dirac point. Here, we reported the observation of the CPGE photocurrent in epitaxial Cd3As2 thin films grown on a GaAs(111)B substrate. The signature of the CPGE is confirmed by its sign reversal upon switching the helicity of optical radiation, as well as its dependence on the excitation incident angle and power. By comparison of the CPGE response between the films with different thicknesses, it is suggested that the observed CPGE results from the reduced structure symmetry and substantially modified electronic band structure of the Cd3As2 thin film that undergoes large epitaxial strain. Our experimental findings provide a valuable reference for the band engineering and exotic helicity-dependent photocurrent phenomena in DSMs towards their potential opto-spintronic device applications.
RESUMEN
The manipulation of magnetism provides a unique opportunity for the development of data storage and spintronic applications. Until now, electrical control, pressure tuning, stacking structure dependence, and nanoscale engineering have been realized. However, as the dimensions are decreased, the decrease of the ferromagnetism phase transition temperature (Tc) is a universal trend in ferromagnets. Here, we make a breakthrough to realize the synthesis of 1 and 2 unit cell (UC) Cr2Te3 and discover a room-temperature ferromagnetism in two-dimensional Cr2Te3. The newly observed Tc increases strongly from 160 K in the thick flake (40.3 nm) to 280 K in 6 UC Cr2Te3 (7.1 nm). The magnetization and anomalous Hall effect measurements provided unambiguous evidence for the existence of spontaneous magnetization at room temperature. The theoretical model revealed that the reconstruction of Cr2Te3 could result in anomalous thickness-dependent Tc. This dimension tuning method opens up a new avenue for manipulation of ferromagnetism.
RESUMEN
Carrier relaxation dynamics of InSe flakes is investigated by using time-resolved pump-probe reflectivity measurement. The photocarriers associated with the P xy orbital band-edge transition at 2.40 eV, which is coupled to the in-plane polarized light, is observed to possess a lifetime of â¼19 ps at room temperature and â¼99 ps at 10 K. The temperature and power dependent carrier lifetime suggests that Shockley-Read-Hall process is the dominant nonradiative recombination mechanism responsible for the carrier relaxation. In addition, the electron scattering with a 14.5 meV optical phonon plays an active role in the carrier relaxation with increasing temperatures. A broad absorption around 1.65-1.90 eV is observed. The photocarriers associated with this broad transition show a long lifetime of â¼200 ps that is nearly independent of temperature and photon energy. This is indicative of bound carriers by defects. Our experimental results provide essential information for the characteristics of carrier dynamics and defects in InSe flakes. The experimental findings are fundamentally important for further development of microelectronics and optoelectronics based on InSe.
RESUMEN
We investigated the build-up and relaxation processes of spin-polarized A- and B-exciton dynamics in monolayer, bilayer, and bulk WSe2 using helicity-resolved two-color pump-probe spectroscopy. Substantial spin polarization was confirmed in bulk crystals, though the spin polarization degree of A excitons decreased from monolayer to bulk. However, the spin polarization of A excitons almost vanished in all different layered-flakes when resonantly pumping the B-exciton transition, owing to the dominant role of interexciton transfer. When resonantly pumping the A-exciton transition, the spin polarization of the up-converted B excitons was inverted in all layers because of the efficient Dexter-like coupling and phonon-assisted scattering. The same short spin relaxation time (1.8 ± 0.2 ps) of A excitons was found for all studied flakes in the subsequent spin depolarization processes, which was ascribed to the active electron-phonon scattering resulting from the intrinsic small conduction-band spin-orbit coupling splitting in layered WSe2.
