Achieving High-Quality Sn-Pb Perovskite Films on Complementary Metal-Oxide-Semiconductor-Compatible Metal/Silicon Substrates for Efficient Imaging Array.

Although Sn-Pb perovskites sensing near-ultraviolet-visible-near-infrared light could be an attractive alternative to silicon in photodiodes and imaging, there have been no clear studies on such devices constructed on metal/silicon substrates, hindering their direct integration with complementary metal-oxide semiconductor (CMOS) and silicon electronics. Typically, high surface roughness and severe pinholes of Sn-rich binary perovskites make it difficult for them to fulfill the requirements of efficient photodiodes and imaging. These issues cause inherently high dark current and poor (dark and photo-) current uniformity. Herein, we propose and demonstrate the room-temperature crystallization in the Sn-rich binary perovskite system to effectively control film crystallization kinetics. With experimental and theoretical studies of the crystallization mechanism, we successfully tune the density and location of nanocrystals in precursor films to achieve compact nanocrystals, which coalesce into high-quality (smooth, dense, and pinhole-free) perovskites with intensified preferred orientation and decreased trap density. The high-quality perovskites reduce dark current and improve (dark and photo-) current uniformity of perovskite photodiodes on CMOS-compatible metal/silicon substrates. Meanwhile, self-powered devices achieve a high responsivity of 0.2 A/W at 940 nm, a large dynamic range of 100 dB, and a fast fall time of 2.27 µs, exceeding those of most silicon-based imaging sensors. Finally, a 6 × 6 pixel integrated photodiode array is successfully demonstrated to realize the imaging application. The work contributes to understanding the fundamentals of the crystallization of Sn-rich binary perovskites and advancing perovskite integration with Si-based electronics.

Room-Temperature Solution-Processed NiOx:PbI2 Nanocomposite Structures for Realizing High-Performance Perovskite Photodetectors.

While methylammonium lead iodide (MAPbI3) with interesting properties, such as a direct band gap, high and well-balanced electron/hole mobilities, as well as long electron/hole diffusion length, is a potential candidate to become the light absorbers in photodetectors, the challenges for realizing efficient perovskite photodetectors are to suppress dark current, to increase linear dynamic range, and to achieve high specific detectivity and fast response speed. Here, we demonstrate NiOx:PbI2 nanocomposite structures, which can offer dual roles of functioning as an efficient hole extraction layer and favoring the formation of high-quality MAPbI3 to address these challenges. We introduce a room-temperature solution process to form the NiOx:PbI2 nanocomposite structures. The nanocomposite structures facilitate the growth of the compact and ordered MAPbI3 crystalline films, which is essential for efficient photodetectors. Furthermore, the nanocomposite structures work as an effective hole extraction layer, which provides a large electron injection barrier and favorable hole extraction as well as passivates the surface of the perovskite, leading to suppressed dark current and enhanced photocurrent. By optimizing the NiOx:PbI2 nanocomposite structures, a low dark current density of 2 × 10(-10) A/cm(2) at -200 mV and a large linear dynamic range of 112 dB are achieved. Meanwhile, a high responsivity in the visible spectral range of 450-750 nm, a large measured specific detectivity approaching 10(13) Jones, and a fast fall time of 168 ns are demonstrated. The high-performance perovskite photodetectors demonstrated here offer a promising candidate for low-cost and high-performance near-ultraviolet-visible photodetection.