Multiple strategies of improving photocatalytic water splitting efficiency in 2D arsenic sesquichalcogenides.

Improving the solar-to-hydrogen efficiency has always been a significant topic in the field of photocatalysis. Based on first-principles calculations, herein, we propose multiple strategies to improve the photocatalytic properties of 2D arsenic sesquichalcogenides for full water splitting. The new configurations As2STe2 and As2SeTe2 monolayers, derived from the As2Te3 monolayers by surface modification, are manifested to be typical infrared-light driven photocatalysts. Notably, under the built-in electric field, As2STe2 and As2SeTe2 monolayers can fulfil overall water splitting and the predicted solar-to-hydrogen efficiencies even reach up to 36.19% and 29.36%, respectively. The Gibbs free energy calculations indicate that the OER can be successfully driven under light irradiation. In addition, the overpotentials can provide most of the energy for HER when illuminated, especially for As2STe2 with the . In addition, both As2S3 and As2Se3 monolayers are capable of satisfying the conditions for photocatalytic water splitting. Furthermore, the band gaps of As2Se3 and As2S3 can dramatically be narrowed by increasing the number of layers and doping, respectively. These findings provide a theoretical basis for As2X3 monolayers to achieve efficient photocatalytic water splitting.

Effects of Inorganic Substitutions and Different Metal Electrode Materials on Electronic Transport Properties of Organic Molecular Devices.

Incorporating inorganic components into organic molecular devices offers one novel alternative to address challenges existing in the fabrication and integration of nanoscale devices. In this study, using a theoretical method of density functional theory combined with the nonequilibrium Green's function, a series of benzene-based molecules with group III and V substitutions, including borazine molecule and XnB3-nN3H6 (X = Al or Ga, n = 1-3) molecules/clusters, are constructed and investigated. An analysis of electronic structures reveals that the introduction of inorganic components effectively reduces the energy gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital, albeit at the cost of reduced aromaticity in these molecules/clusters. Simulated electronic transport characteristics demonstrate that XnB3-nN3H6 molecules/clusters coupled between metal electrodes exhibit lower conductance compared to prototypical benzene molecule. Additionally, the choice of metal electrode materials significantly impacts the electronic transport properties, with platinum electrode devices displaying distinct behavior compared to silver, copper, and gold electrode devices. This distinction arises from the amount of transferred charge, which modulates the alignment between molecular orbitals and the Fermi level of the metal electrodes by shifting the molecular orbitals in energy. These findings provide valuable theoretical insights for the future design of molecular devices incorporating inorganic substitutions.

Dual transmission channels at metal-MoS2/WSe2 hetero-bilayer interfaces.

van der Waals heterostructures (vdWHs) open the possibility of creating novel semiconductor materials at the atomic scale that demonstrate totally new physics and enable unique functionalities, and have therefore attracted great interest in the fields of advanced electronic and optoelectronic devices. However, the interactions between metals and vdWHs semiconductors require further investigation as they directly affect or limit the advancement of high-performance electronic devices. Here we study the contact behavior of MoS2/WSe2 vdWHs in contact with a series of bulk metals using ab initio electronic structure calculations and quantum transport simulations. Our study shows that dual transmission paths for electrons and holes exist at the metal-MoS2/WSe2 hetero-bilayer interfaces. In addition, the metal-induced bandgap state (MIGS) of the original monolayer disappears due to the creation of the heterolayer, which weakens the Fermi level pinning (FLP) effect. We also find that the creation of the heterolayer causes a change in the Schottky barrier height (SBH) of the non-ohmic contact systems, whilst this does not occur so easily in the ohmic contact systems. In addition, our results indicate that when Al, Ag and Au are in contact with a MoS2/WSe2 hetero-bilayer semiconductor, a low contact barrier exists throughout the whole transmission process causing the charge to tunnel to the MoS2 layer, irrespective of whether the MoS2 is in contact with the metals as the nearest layer or as the next-nearest layer. Our work not only offers new insights into electrical contact issues between metals and hetero-bilayer semiconductors, but also provides guidance for the design of high-performance vdWHs semiconductor devices.

Tunable Dirac states in doped B2S3 monolayers.

Two-dimensional (2D) Dirac materials have been a research hotspot due to their intriguing properties, such as high carrier mobility and ballistic charge transport. Here, we demonstrate that the B2S3 monolayer with a hexagonal structure, which has been reported as a photocatalyst, can be tuned to new 2D Dirac materials by doping atoms. The Young's modulus can reach 65.23 N m-1, indicating that the monolayer can be used as a buffer materials. The electronic structures of the pristine B2S3 monolayer show that some Dirac points appear but do not occur exactly on the Fermi level (EF). Fortunately, we find that the Dirac cone can be tuned to the EF by doping C, N, or Sn atoms. The C-doped B2S3 monolayer can be a half-metallic Dirac material, which has significant potential application in spintronics. For N- and Sn-doped B2S3 monolayers, the typical kagome bands are formed near the EF, which arise from three molecular orbitals hybridized by B, S, and N (Sn) atoms. These outstanding properties render the doped B2S3 monolayers promising 2D Dirac materials for future nanoelectronic devices.

Novel 2D B2S3as a metal-free photocatalyst for water splitting.

Metal-free semiconductors with desirable characteristics have recently gained great attention in the field of hydrogen generation. The non-metal material B2S3has two phases, hexagonal B2S3(h-B2S3) and orthorhombic B2S3(o-B2S3), which compose a novel class of 2D materials. Bothh-B2S3ando-B2S3monolayers are direct semiconductors with bandgaps of 2.89 and 3.77 eV by the Heyd-Scuserria-Ernzerhof (HSE) function, respectively. Under appropriate uniaxial strain (1%), the bandgap ofh-B2S3can be decreased to 2.8 eV. The carrier mobility can reach 1160 cm2V-1s-1, supporting the fast migration of photo-induced carriers. Most importantly, the band edges of bothh-B2S3ando-B2S3cover the reduction and oxidation levels for water splitting. We explore the process of photocatalytic water splitting onh-B2S3monolayers by analyzing the feasibility of the decomposition of H2O and the generation of H2. The results indicate that the special mesoporous structure of B2S3is helpful for photocatalytic hydrogen production. The new nanomaterial, B2S3, offers great promise as a metal-free photocatalyst due to its tunable bandgaps, its useful band edges, and its other excellent electronic properties.

Theoretical Simulations of Heavy-Atom Kinetic Isotope Effects in Aliphatic Claisen Rearrangement.

The aliphatic Claisen rearrangement of allyl vinyl ether has attracted great interest for its broad applications in chemical synthesis and biosynthesis. Although it is well agreed that this reaction proceeds via a concerted, "chair-like" transition state, certain inconsistencies of kinetic isotope effect (KIE) data between experimental measurements and theoretical simulations or between independent experiments indicate that the nature and mechanism of this important reaction need to be investigated in more detail. In order to verify two independent sets of experimental data, we present theoretical calculations on heavy-atom KIE values of alipahtic Claisen rearrangement, using our recently developed path-integral method with the second-order Kleinert's variational perturbation theory, which goes beyond the traditional method for computing KIE values by employing the Bigeleisen equation. Amazingly, the results demonstrate that both sets of experimental measurements are correct, while the inconsistency originates from the fact that the aliphatic Claisen rearrangement undergoes similar but different mechanisms in gas and solution phases. Different experimental conditions will alter the actual reactant state by tuning the population distribution of reactant conformers. According to the comparison between experimental and theoretical results, a more clear reaction mechanism of aliphatic Claisen rearrangement is revealed.

Surface functional group modification induced partial Fermi level pinning and ohmic contact at borophene-MoS2 interfaces.

Large Schottky barrier at the electric contact interface drastically hinders the performance of two-dimensional (2D) semiconductor devices, because of which it is crucial to develop better methods to achieve the ohmic contact. Recently, a new field effect transistor (FET) device was constructed by the popular 2D channel material MoS2 and an electrode material borophene was detected theoretically, but the large Schottky barrier still existed. Hence, we used surface functional groups modification on the borophene surface to regulate this Schottky barrier, based on ab initio electronic structure calculations and quantum transport simulations. Our study shows that this method makes it possible to obtain tunable metal work functions in a wide range, and the ohmic contact can still be realized. Although van der Waals (vdW) contacts were observed at all the interfaces between the 2D borophene-based metals and the monolayer MoS2, the Fermi level pinning (FLP) effect was still obvious, and existed in our proposed system with the ohmic contact. Moreover, we also discuss the origin of the FLP with varying degrees. It was found that the interface dipole and metal-induced gap states (MIGS) would be responsible for the FLP of vertical and lateral directions, respectively. More precisely, we find that the size of MIGS is dependent on the relative orientation between the functional group and metal-MoS2 interface. This work not only suggests that surface functional group modification is effective in forming ohmic contact with MoS2, but also holds some implication in the fundamental research on metal-semiconductor contacts with the vdW type.

Unsupervised Video Matting via Sparse and Low-Rank Representation.

A novel method, unsupervised video matting via sparse and low-rank representation, is proposed which can achieve high quality in a variety of challenging examples featuring illumination changes, feature ambiguity, topology changes, transparency variation, dis-occlusion, fast motion and motion blur. Some previous matting methods introduced a nonlocal prior to search samples for estimating the alpha matte, which have achieved impressive results on some data. However, on one hand, searching inadequate or excessive samples may miss good samples or introduce noise; on the other hand, it is difficult to construct consistent nonlocal structures for pixels with similar features, yielding video mattes with spatial and temporal inconsistency. In this paper, we proposed a novel video matting method to achieve spatially and temporally consistent matting result. Toward this end, a sparse and low-rank representation model is introduced to pursue consistent nonlocal structures for pixels with similar features. The sparse representation is used to adaptively select best samples and accurately construct the nonlocal structures for all pixels, while the low-rank representation is used to globally ensure consistent nonlocal structures for pixels with similar features. The two representations are combined to generate spatially and temporally consistent video mattes. We test our method on lots of dataset including the benchmark dataset for image matting and dataset for video matting. Our method has achieved the best performance among all unsupervised matting methods in the public alpha matting evaluation dataset for images.

Correction to: Natural product pectolinarigenin inhibits osteosarcoma growth and metastasis via SHP-1-mediated STAT3 signaling inhibition.

Since publication of this article, the authors have noticed errors in Fig. 1e (the merge image of control group) and Fig. 5e (Pec. 50 mg/kg group). As a result of the misfiling of the data, incorrect images were inadvertently inserted in Figs. 1e and 5e during figure preparation. The correct figures are given below.

Adsorption of gas molecules on a manganese phthalocyanine molecular device and its possibility as a gas sensor.

A theoretical investigation of the gas detection performance of manganese(ii) phthalocyanine (MnPc) molecular junctions for six different gases (NO, CO, O2, CO2, NO2, and NH3) is executed through a non-equilibrium Green's function technique in combination with spin density functional theory. Herein, we systematically studied the adsorption structural configurations, the adsorption energy, the charge transfer, and the spin transport properties of the MnPc molecular junctions with these gas adsorbates. Remarkably, NO adsorption can achieve an off-state of the Mn spin; this may be an effective measure to switch the molecular spin. In addition, our results indicate that by measuring spin filter efficiency and the changes in total current through the molecular junctions, the CO, NO, O2, and NO2 gas molecules can be detected selectively. However, the CO2 and NH3 gas adsorptions are difficult to be detected due to weak van der Waals interaction between these two gases and central Mn atom. Our findings provide important clues to the application of nanosensors for highly sensitive and selective based on MnPc molecular junction systems.

A comparison of the MeltPro® HPV Test with the Cobas® HPV Test for detecting and genotyping 14 high-risk human papillomavirus types.

The clinical performance of the newly developed MeltPro® HPV Test, based on multicolor melting curve analysis, was evaluated and compared with the commercially available Cobas® HPV Test for detection of HPV and genotyping of HPV-16 and HPV-18. A total of 1647 cervical samples were analyzed with both tests. The agreement values were 96.2% for HPV detection, 99.6% for HPV-16 identification, and 99.7% for HPV-18 identification. All genotyping results from MeltPro® HPV Test showed that HPV-52, HPV-58, and HPV-16 were the most common types in this study. Intra-laboratory reproducibility studies showed 97.8% agreement while inter-laboratory reproducibility studies showed 96.9% agreement for the MeltPro® HPV Test. The MeltPro® HPV Test and Cobas® HPV Test are highly correlative and are useful for monitoring HPV infection.

Natural product pectolinarigenin inhibits osteosarcoma growth and metastasis via SHP-1-mediated STAT3 signaling inhibition.

Signal transducer and activator of transcription 3 (STAT3) has important roles in cancer aggressiveness and has been confirmed as an attractive target for cancer therapy. In this study, we used a dual-luciferase assay to identify that pectolinarigenin inhibited STAT3 activity. Further studies showed pectolinarigenin inhibited constitutive and interleukin-6-induced STAT3 signaling, diminished the accumulation of STAT3 in the nucleus and blocked STAT3 DNA-binding activity in osteosarcoma cells. Mechanism investigations indicated that pectolinarigenin disturbed the STAT3/DNA methyltransferase 1/HDAC1 histone deacetylase 1 complex formation in the promoter region of SHP-1, which reversely mediates STAT3 signaling, leading to the upregulation of SHP-1 expression in osteosarcoma. We also found pectolinarigenin significantly suppressed osteosarcoma cell proliferation, induced apoptosis and reduced the level of STAT3 downstream proteins cyclin D1, Survivin, B-cell lymphoma 2 (Bcl-2), B-cell lymphoma extra-large (Bcl-xl) and myeloid cell leukemia 1 (Mcl-1). In addition, pectolinarigenin inhibited migration, invasion and reserved epithelial-mesenchymal transition (EMT) phenotype in osteosarcoma cells. In spontaneous and patient-derived xenograft models of osteosarcoma, we identified administration (intraperitoneal) of pectolinarigenin (20 mg/kg/2 days and 50 mg/kg/2 days) blocked STAT3 activation and impaired tumor growth and metastasis with superior pharmacodynamic properties. Taken together, our findings demonstrate that pectolinarigenin may be a candidate for osteosarcoma intervention linked to its STAT3 signaling inhibitory activity.

The electronic transport properties of zigzag silicene nanoribbon slices with edge hydrogenation and oxidation.

First principles calculations are performed to study the transport properties of H or H2 edge-hydrogenated zigzag silicene nanoribbon slices with 6 zigzag chains (6ZSiNR) as well as OH or O edge-oxidized 6ZSiNR slices connected with H-terminated 6ZSiNR electrodes. We mainly focus on two configurations: symmetric edge modification and asymmetric edge modification. It is found that these configurations show distinctly different transport behaviours under bias voltages, depending on whether their structures satisfy c2 symmetry operation along the central axis. In addition, the effects of various functional groups on the electronic transport are investigated; comparison of the current magnitudes indicates that the H group has the strongest effect, followed by the OH group, the O group, and the H2 group. This difference is revealed to be related to the coupling interaction between the edge groups of the ZSiNR slices and the H groups of the ZSiNRs electrodes, as well as the transmission channels around the Fermi level.

Spin transport properties in lower n-acene-graphene nanojunctions.

A series of n-acene-graphene (n = 3, 4, 5, 6) devices, in which n-acene molecules are sandwiched between two zigzag graphene nanoribbon (ZGNR) electrodes, are modeled through the spin polarized density functional theory combined with the non-equilibrium Green's function technique. Our theoretical results show that for n-acene molecules ranging from anthracene to hexacene, the spin-polarized electronic states near the Fermi level can be induced by the spin-polarized ZGNR electrodes, which strengthen gradually to facilitate the electronic transport. A nearly 100% spin filtering ratio and a dual-orientation spin-rectifying effect are observed in a wide range of bias voltage. Importantly, an over 8000% giant magnetoresistance is obtained in the low bias range from -0.1 V to +0.1 V. Moreover, negative differential resistance behaviors are detected in these devices. The potential mechanisms of these intriguing phenomena are proposed and these findings would be instructive for the design and synthesis of high-performance graphene-based spin-related devices.

Rectification inversion in oxygen substituted graphyne-graphene-based heterojunctions.

Current rectification is found in oxygen-substituted zigzag graphyne nanoribbon/hydrogen-terminated zigzag graphene nanoribbon heterostructure junctions, from the application of nonequilibrium Green's function formalism combined with density functional theory. This behavior could be tuned by varying the number and location of oxygen atoms in the zigzag graphyne nanoribbon parts, and the rectification direction could be reversed due to the parity limitation tunneling effect. Moreover, an obvious negative differential resistance behavior is found and may be explained by two different mechanisms.