Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 2 de 2
Filtrar
Más filtros










Base de datos
Intervalo de año de publicación
1.
Nanotechnology ; 28(38): 385204, 2017 Sep 20.
Artículo en Inglés | MEDLINE | ID: mdl-28703121

RESUMEN

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1-3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

2.
Nat Commun ; 7: 13575, 2016 11 24.
Artículo en Inglés | MEDLINE | ID: mdl-27882926

RESUMEN

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

SELECCIÓN DE REFERENCIAS
DETALLE DE LA BÚSQUEDA
...