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Adv Mater ; 25(39): 5581-5, 2013 Oct 18.
Artículo en Inglés | MEDLINE | ID: mdl-23893892


Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes.

J Phys Condens Matter ; 22(30): 302003, 2010 Aug 04.
Artículo en Inglés | MEDLINE | ID: mdl-21399332


We report the observation of intrinsic exchange hardening in polycrystalline GdN thin films grown at room temperature by magnetron sputtering. We find, in addition to the ferromagnetic phase, that a fraction of GdN crystallizes in a structural polymorphic form which orders antiferromagnetically. The relative fraction of these two phases was controlled by varying the relative abundance of reactive species in the sputtering plasma by means of the sputtering power and N(2) partial pressure. An exchange bias of ∼ 30 Oe was observed at 10 K. The exchange coupling between the ferromagnetic and the antiferromagnetic phases resulted in an order of magnitude enhancement in the coercive field in these films.

J Phys Condens Matter ; 17(1): 75-86, 2005 Jan 12.
Artículo en Inglés | MEDLINE | ID: mdl-21690670


Magnetotransport measurements are performed over a broad range of temperature (T) and magnetic field (H) on highly degenerate n-type Zn(1-x)Co(x)O [Formula: see text] epitaxial films. The cobalt-free samples are characterized by a metallic resistivity ρ(T) down to 2 K, a negative and predominantly isotropic magnetoresistance (MR) and optical transmission above 85% in the visible range of the electromagnetic spectrum. X-ray diffraction measurements show that while for [Formula: see text], all cobalt atoms occupy the tetrahedral sites of the wurtzite structure of ZnO, a phase separation into CoO is seen for x>0.2. In the solution phase, we do not observe any signatures of a spontaneous ordering of the cobalt spins despite a large concentration of mobile electrons (>10(20) cm(-3)). The absence of anomalous Hall resistance is consistent with this observation. The carrier concentration (n) over the entire range of x remains above the Mott limit for the insulator-to-metal transition in a doped semiconductor. However, while the Co-free samples are metallic (T>2 K), we see a resistivity (ρ) minimum followed by lnT divergence of ρ(T) at low temperatures with increasing x. The magnetoresistance of these samples is negative and predominantly isotropic. Moreover, the MR tends to follow a logH behaviour at high fields. These observations, including the Kondo-like minimum in the resistivity, suggest s-d exchange dominated transport in these dilute magnetic semiconductors.