Enhancement of photovoltaic parameters of thermally stable graphene/LaVO3semitransparent solar cell by employing interfacial graphene quantum dots.

Semitransparent solar cells are attracting attention not only for their visual effects but also for their ability to effectively utilize solar energy. Here, we demonstrate a translucent solar cell composed of bis(trifluoromethane sulfonyl)-amide (TFSA)-doped graphene (Gr), graphene quantum dots (GQDs), and LaVO3. By introducing a GQDs intermediate layer at the TFSA-Gr/LaVO3interface, we can improve efficiency by preventing carrier recombination and promoting charge collection/separation in the device. As a result, the efficiency of the GQDs-based solar cell was 4.35%, which was higher than the 3.52% of the device without GQDs. Furthermore, the average visible transmittance of the device is 28%, making it suitable for translucent solar cells. The Al reflective mirror-based system improved the power conversion efficiency by approximately 7% compared to a device without a mirror. Additionally, the thermal stability of the device remains at 90% even after 2000 h under an environment with a temperature of 60 °C and 40% relative humidity. These results suggest that TFSA-Gr/GQDs/LaVO3-based cells have a high potential for practical use as a next-generation translucent solar energy power source.

Optimization of UV-Curable Polyurethane Acrylate Coatings with Hexagonal Boron Nitride (hBN) for Improved Mechanical and Adhesive Properties.

Polymer coatings are widely used in industries for protection, decoration, and specific applications, typically including volatile organic compounds (VOCs) to achieve low viscosity. The growing environmental concerns and the anticipated limits on fossil feedstock have driven the coating industry towards eco-friendly alternatives, with UV-curing technology emerging as a promising solution due to its energy efficiency, low-temperature operation, reduced VOC emissions, and high curing speed. Polyurethane acrylates (PUAs) are critical in UV-curable formulations, offering excellent flexibility, impact strength, optical, and adhesion properties. However, UV-cured PUA coatings face limitations in thermal stability and tensile strength, which can be addressed by incorporating fillers. This study investigates the effects of multi-functionalized hexagonal boron nitride (hBN) nanoparticles on the mechanical, thermal, optical, and adhesion properties of UV-cured PUA films and coatings for pre-coated metals. The results demonstrated that incorporating hBN nanoparticles enhanced the mechanical and thermal properties of the nanocomposite films, with optimal performance observed at 0.5% hBN loading. Despite the improved properties, the FTIR spectra indicated that the low concentration of hBN did not produce significant changes, potentially due to the overshadowing signals from the difunctional polyurethane acrylate.

Monitoring Electrochemical Dynamics through Single-Molecule Imaging of hBN Surface Emitters in Organic Solvents.

Electrochemical techniques conventionally lack spatial resolution and average local information over an entire electrode. While advancements in spatial resolution have been made through scanning probe methods, monitoring dynamics over large areas is still challenging, and it would be beneficial to be able to decouple the probe from the electrode itself. In this work, we leverage single molecule microscopy to spatiotemporally monitor analyte surface concentrations over a wide area using unmodified hexagonal boron nitride (hBN) in organic solvents. Through a sensing scheme based on redox-active species interactions with fluorescent emitters at the surface of hBN, we observe a region of a linear decrease in the number of emitters against increasingly positive potentials applied to a nearby electrode. We find consistent trends in electrode reaction kinetics vs overpotentials between potentiostat-reported currents and optically read emitter dynamics, showing Tafel slopes greater than 290 mV·decade-1. Finally, we draw on the capabilities of spectral single-molecule localization microscopy (SMLM) to monitor the fluorescent species' identity, enabling multiplexed readout. Overall, we show dynamic measurements of analyte concentration gradients on a micrometer-length scale with nanometer-scale depth and precision. Considering the many scalable options for engineering fluorescent emitters with two-dimensional (2D) materials, our method holds promise for optically detecting a range of interacting species with exceptional localization precision.

Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices.

Two-dimensional semiconducting materials such as MoS2have gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, one needs to consider the effect of the environment in which the characterization is carried out. Air exposure has a non-negligible impact on the electronic performance and vacuum thermal annealing is an established method to decrease the effects of adsorbates. Nevertheless, when measurements are performed in ambient conditions these effects arise again. In this work, we study the changes in the electrical and optoelectronic properties of single-layer MoS2-based devices at air exposure after thermal annealing treatment. Measurements are carried out in anin-situvacuum thermal annealing system, enabling the recording of electrical performance degradation over time. Moreover, this work shows how hexagonal boron nitride (hBN) capping improves device performance, both in vacuum and after venting, as well as stability, by decreasing the degradation speed by around six times. The results suggest that vacuum thermal annealing and hBN capping are methods to mitigate the effects of air environment on these devices.

Highly Sustainable h-BN Encapsulated MoS2 Hydrogen Evolution Catalysts.

Despite the importance of the stability of the 2D catalysts in harsh electrolyte solutions, most studies have focused on improving the catalytic performance of molybdenum disulfide (MoS2) catalysts rather than the sustainability of hydrogen evolution. In previous studies, the vulnerability of MoS2 crystals is reported that the moisture and oxygen molecules can cause the oxidation of MoS2 crystals, accelerating the degradation of crystal structure. Therefore, optimization of catalytic stability is crucial for approaching practical applications in 2D catalysts. Here, it is proposed that monolayered MoS2 catalysts passivated with an atomically thin hexagonal boron nitride (h-BN) layer can effectively sustain hydrogen evolution reaction (HER) and demonstrate the ultra-high current density (500 mA cm⁻2 over 11 h) and super stable (64 h at 150 mA cm⁻2) catalytic performance. It is further confirmed with density functional theory (DFT) calculations that the atomically thin h-BN layer effectively prevents direct adsorption of water/acid molecules while allowing the protons to be adsorbed/penetrated. The selective penetration of protons and prevention of crystal structure degradation lead to maintained catalytic activity and maximized catalytic stability in the h-BN covered MoS2 catalysts. These findings propose a promising opportunity for approaching the practical application of 2D MoS2 catalysts having long-term stability at high-current operation.

Preparation of BN Nanoparticle with High Sintering Activity and Its Formation Mechanism.

Hexagonal boron nitride (h-BN) nanoparticles have attracted increasing attention due to their unique structure and properties. However, it is difficult to synthesize h-BN nanoparticles with uniform spherical morphology due to their crystal characteristic. The morphology control by tuning their precursor synthesis is a promising and effective strategy to solve this problem. Especially, the treatment temperature of precursors plays an important role in the morphology and surface area of h-BN nanoparticles. Herein, h-BN nanoparticles with different morphologies were synthesized via regulating the treatment temperature of precursors. The result shows that treatment temperature will affect the microstructure and state of precursor and further influence the morphology of h-BN products. Benefiting from the unique structure, the h-BN obtained using 250 °C precursors shows higher specific surface area (61.1 m2 g-1) than that of 85 °C (36.5 m2 g-1) and 145 °C (27.9 m2 g-1). h-BN products obtained using 250 °C precursors show higher specific surface area than that of 85 °C and 145 °C. The optimal condition for obtaining high-quality spherical h-BN is the pretreatment temperature of 250 °C and sintering temperature of 1300 °C. Importantly, compared with commercial h-BN nanoparticles, the synthesized h-BN nanoparticles show more uniform structure and larger specific surface area, indicating that sintering activity will be greatly improved. Furthermore, the reaction pathway and formation mechanism of h-BN was revealed by DFT calculations. The result shows that the five stationary states and five transition states exist in the reaction pathway, and the energy barrier can be overcome at high temperatures to form a ring h-BN. In view of its simplicity and efficiency, this work is promising for designing and guiding the synthesis of h-BN nanoparticles with uniform morphology.

Alice (and Bob) in Flatland.

2D quantum materials have opened infinite doors, hosting intriguing phenomena and featuring incredible engineering potential. Whether these qualities can boost the use of 2D crystals for quantum applications remains an open field with yet unexplored paths.

Modification Strategies of Hexagonal Boron Nitride Nanomaterials for Photocatalysis.

Although hexagonal boron nitride (h-BN) was initially considered a less promising photocatalyst due to its large band gap and apparent chemical inertness, its unique two-dimensional lamellar structure coupled with high stability and environmental friendliness, as the second largest van der Waals material after graphene, provides a unique platform for photocatalytic innovation. This review not only highlights the intrinsic qualities of h-BN with photocatalytic potentials, such as high stability, environmental compatibility, and tunable bandgap through various modification strategies but also provides a comprehensive overview of the recent advances in h-BN-based nanomaterials for environmental and energy applications, as well as an in-depth description of the modification methods and fundamental properties for these applications. In addition, we discuss the challenges and prospects of h-BN-based nanomaterials for future photocatalysis.

Phonon transport in vacancy induced defective stanene/hBN van der Waals heterostructure.

In this study, Non-Equilibrium Molecular Dynamics (NEMD) simulation is employed to investigate the phonon thermal conductivity (PTC) of Sn/hBN van der Waals heterostructures with different vacancy-induced defects. We deliberately introduce three types of vacancies in Sn/hBN bilayer point vacancies, bivacancies, and edge vacancies at various concentrations ranging from 0.25% to 2%, to examine their effects on PTC across temperatures from 100 K to 600 K. The key findings of our work are (i) PTC declines monotonically with increasing vacancy concentration for all types of vacancies, with a maximum reduction of ∼62% observed at room temperature compared to its pristine form. (ii) The position of defects has an impact on PTC, with a larger decrease observed when defects are present in the hBN layer and a smaller decrease when defects are in the Sn layer. (iii) The type of vacancy also influences PTC, with point vacancies causing the most substantial reduction, followed by bivacancies, and edge vacancies having the least effect. A 2% defect concentration results in a ∼62% decrease in PTC for point vacancies, ∼51% for bivacancies, and ∼32% for edge vacancies. (iv) Finally, our results indicate that for a given defect concentration, PTC decreases as temperature increases. The impact of temperature on thermal conductivity is less pronounced compared to the effect of vacancies for the defective Sn/hBN bilayer. The presence of vacancies and elevated temperatures enhance phonon-defect and phonon-phonon scattering, leading to changes in the phonon density of states (PDOS) profile and the distribution of phonons across different frequencies of Sn/hBN bilayer, thus affecting its thermal conductivity. This work offers new insights into the thermal behavior of vacancy-filled Sn/hBN heterostructures, suggesting potential pathways for modulating thermal conductivity in bilayer van der Waals heterostructures for applications in thermoelectric, optoelectronics, and nanoelectronics in future.

Enhancing Tribological Performance of Self-Lubricating Composite via Hybrid 3D Printing and In Situ Spraying.

In this work, a self-lubricating composite was manufactured using a novel hybrid 3D printing/in situ spraying process that involved the printing of an acrylonitrile butadiene styrene (ABS) matrix using fused deposition modeling (FDM), along with the in situ spraying of alumina (Al2O3) and hexagonal boron nitride (hBN) reinforcements during 3D printing. The results revealed that the addition of the reinforcement induced an extensive formation of micropores throughout the ABS structure. Under tensile-loading conditions, the mechanical strength and cohesive interlayer bonding of the composites were diminished due to the presence of these micropores. However, under tribological conditions, the presence of the Al2O3 and hBN reinforcement improved the frictional resistance of ABS in extreme loading conditions. This improvement in frictional resistance was attributed to the ability of the Al2O3 reinforcement to support the external tribo-load and the shearing-like ability of hBN reinforcement during sliding. Collectively, this work provides novel insights into the possibility of designing tribologically robust ABS components through the addition of in situ-sprayed ceramic and solid-lubricant reinforcements.

Highly Confined Hybridized Polaritons in Scalable van der Waals Heterostructure Resonators.

The optimization of nanoscale optical devices and structures will enable the exquisite control of planar optical fields. Polariton manipulation is the primary strategy in play. In two-dimensional heterostructures, the ability to excite mixed optical modes offers an additional control in device design. Phonon polaritons in hexagonal boron nitride have been a common system explored for the control of near-infrared radiation. Their hybridization with graphene plasmons makes these mixed phonon polariton modes in hexagonal boron nitride more appealing in terms of enabling active control of electrodynamic properties with a reduction of propagation losses. Optical resonators can be added to confine these hybridized plasmon-phonon polaritons deeply into the subwavelength regime, with these structures featuring high quality factors. Here, we show a scalable approach for the design and fabrication of heterostructure nanodisc resonators patterned in chemical vapor deposition-grown monolayer graphene and h-BN sheets. Real-space mid-infrared nanoimaging reveals the nature of hybridized polaritons in the heterostructures. We simulate and experimentally demonstrate localized hybridized polariton modes in heterostructure nanodisc resonators and demonstrate that those nanodiscs can collectively couple to the waveguide. High quality factors for the nanodiscs are measured with nanoscale Fourier transform infrared spectroscopy. Our results offer practical strategies to realize scalable nanophotonic devices utilizing low-loss hybridized polaritons for applications such as on-chip optical components.

Identification of exfoliated monolayer hexagonal boron nitride films with a digital color camera under white light illumination.

Optical microscopy with white light illumination has been employed when obtaining exfoliated monolayer hexagonal boron nitride (1L hBN) films from a large number of randomly placed films on a substrate. However, real-time observation of 1L hBN using a color camera under white light illumination remains challenging since hBN is transparent in the visible wavelength range. The poor optical constant of 1L hBN films in microphotographs is significantly improved using a Si substrate coated with a SiNxthin-film (SiNx/Si). When observing hBN thin films on SiNx/Si using a color digital camera in an optical microscope under white light illumination, the clarity of the captured color images depends on the thickness of the SiNxfilm (d). For real-time direct observation, thedwas optimized based on quantitative chromatic studies tailored to Bayer filters of a color image sensor. Through image simulation, it was determined that the color difference between 1L hBN and the bare substrate is maximized atd= 59 or 70 nm, which was experimentally verified. The SiNx/Si with optimizeddvalues visualized 1L hBN films without requiring significant contrast enhancement via image processing under white light illumination in real-time. Furthermore, the captured color photographs facilitate the reliable determination of the number of layers in few-layer hBN films using the contrast of the green channel of the images.

Probing Correlation of Optical Emission and Defect Sites in Hexagonal Boron Nitride by High-Resolution STEM-EELS.

Optically bright emitters in hexagonal boron nitride (hBN) often acting as a source of a single-photon are mostly attributed to point-defect centers, featuring localized intra-bandgap electronic states. Although vacancies, anti-sites, and impurities have been proposed as candidates, the exact physical and chemical nature of most hBN single-photon emitters (SPEs) within the visible region are still up for debate. Combining site-specific high-angle annular dark-field imaging (HAADF) with electron energy loss spectroscopy (EELS), we resolve and identify a few carbon substitutions among neighboring hBN hexagons, all within the same sample region, from which typical defect emission is observed. Our experimental results are further supported by first-principles calculations, through which the stability and possible optical transitions of the proposed carbon-defect complex are assessed. The presented correlation between optical emission and defects provides valuable information toward the controlled creation of emitters in hBN, highlighting carbon complexes as another probable cause of its visible SPEs.

Hexagonal Boron Nitride Quantum Dots Embedded on Layer-by-Layer Films for Peroxidase-Assisted Colorimetric Detection of ß-Galactosidase Producing Pathogens.

Pathogen detection has become a major research area all over the world for water quality surveillance and microbial risk assessment. Therefore, designing simple and sensitive detection kits plays a key role in envisaging and evaluating the risk of disease outbreaks and providing quality healthcare settings. Herein, we have designed a facile and low-cost colorimetric sensing strategy for the selective and sensitive determination of ß-galactosidase producing pathogens. The hexagonal boron nitride quantum dots (h-BN QDs) were established as a nanozyme that showed prominent peroxidase-like activity, which catalyzes 3,3',5,5'-tetramethylbenzidine (TMB) oxidation by H2O2. The h-BN QDs were embedded on a layer-by-layer assembled agarose biopolymer. The ß-galactosidase enzyme partially degrades ß-1,4 glycosidic bonds of agarose polymer, resulting in accessibility of h-BN QDs on the solid surface. This assay can be conveniently conducted and analyzed by monitoring the blue color formation due to TMB oxidation within 30 min. The nanocomposite was stable for more than 90 days and was showing TMB oxidation after incubating it with Escherichia coli (E. coli). The limit of detection was calculated to be 1.8 × 106 and 1.5 × 106 CFU/mL for E. coli and Klebsiella pneumonia (K. pneumonia), respectively. Furthermore, this novel sensing approach is an attractive platform that was successfully applied to detect E. coli in spiked water samples and other food products with good accuracy, indicating its practical applicability for the detection of pathogens in real samples.

Polarization-insensitive perfect absorption in van der waals hyper-structure.

Infrared perfect absorption has been widely investigated due to its potential applications in photodetectors, photovoltaics and medical diagnostics. In this report, we demonstrate that at particular infrared frequencies, a simple planar structure made up of graphene-hexagonal Boron Nitride (hBN) hyper-structure is able to nearly perfectly absorb incident light irrespective of its polarization (Transverse-Magnetic TM, or Transverse-Electric TE). By using this interferenceless technique, the hyper-structure achieves nearly zero reflectance at a wide range of angles in a narrow frequency band. We analytically predict the condition of achieving such an important feature of perfect absorption for both TM and TE polarizations. Interestingly, the infrared perfect absorption can be redshifted by increasing the thickness of the hBN layers and blueshifted by increasing the graphene's chemical potential. Such flexible control of infrared perfect absorption offers a new tool for controlling electromagnetic waves and has potential applications in photodetection and other light control applications.

Thermal properties analysis and thermal cycling of HITEC molten salt with h-BN nanoparticles for CSP thermal energy storage applications.

Molten salts are the operational fluid for most concentrated solar power (CSP) systems, which has attracted more attention among the scientific community due to the augmentation of their properties with the doping of nanoparticles. Hexagonal boron nitride (h-BN) nanoparticles were dispersed in HITEC molten salt to create a novel nanofluid and evaluate the h-BN nanoparticles' influence on HITEC thermophysical properties. The influence of nanoparticle concentration (0.1, 0.5, and 1wt.%) of h-BN and HITEC was studied in this research. HITEC and nano-enhanced HITEC molten salt (NEHMS) were characterized using energy-dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), and Fourier transform infrared spectroscopy (FT-IR). Specific heat capacity, latent heat, and melting temperature were assessed using differential scanning calorimetry (DSC). The maximum working temperature was evaluated with thermogravimetric analysis (TGA). The ideal nanoparticle concentration is 0.1 wt.% h-BN, which results in a 27% increase in heat capacity, a 72% increase in latent heat, and a 7% enhancement in thermal stability. The thermal cycling stability test proved the stability of the enhanced thermophysical properties. The material characterization revealed that the samples with improved thermophysical properties have a homogeneous dispersion of nanoparticles with minor nanoparticle agglomeration. The system advisor model (SAM) simulation comparison of the optimum sample with solar salt and HITEC salt revealed that using the optimum sample increases CSP plant efficiency by 0.4% and reduces power costs by 0.13¢/kWh.

Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain.

The h-BN/diamond mix-dimensional heterostructure has broad application prospects in the fields of optoelectronic devices and power electronic devices. In this paper, the electronic properties and band offsets of hexagonal boron nitride (h-BN)/(H, O, F, OH)-diamond (111) heterostructures were studied by first-principles calculations under biaxial strain. The results show that different terminals could significantly affect the interface binding energy and charge transfer of h-BN/diamond heterostructure. All heterostructures exhibited semiconductor properties. The h-BN/(H, F)-diamond systems were indirect bandgap, while h-BN/(O, OH)-diamond systems were direct bandgap. In addition, the four systems all formed type-II heterostructures, among which h-BN/H-diamond had the largest band offset, indicating that the system was more conducive to the separation of electrons and holes. Under biaxial strain the bandgap values of the h-BN/H-diamond system decreased, and the band type occurred direct-indirect transition. The bandgap of h-BN/(O, F, OH)-diamond system increased linearly in whole range, and the band type only transformed under large strain. On the other hand, biaxial strain could significantly change the band offset of h-BN/diamond heterostructure and promote the application of this heterostructure in different fields. Our work provides theoretical guidance for the regulation of the electrical properties of h-BN/diamond heterostructures by biaxial strain.

Near-Unity Light-Matter Interaction in Mid-Infrared van der Waals Metasurfaces.

Accessing mid-infrared radiation is of great importance for a range of applications, including thermal imaging, sensing, and radiative cooling. Here, we study light interaction with hexagonal boron nitride (hBN) nanocavities and reveal strong and tunable resonances across its hyperbolic transition. In addition to conventional phonon-polariton excitations, we demonstrate that the high refractive index of hexagonal boron nitride outside the Reststrahlen band allows enhanced light-matter interactions in deep subwavelength (<λ/15) nanostructures across a broad 7-8 µm range. Emergence and interplay of Fabry-Perot and Mie-like resonances are examined experimentally and theoretically. Near-unity absorption and high quality (Q ≥ 80) resonance interaction in the vicinity of the hBN transverse optical phonon is further observed. Our study provides avenues to design highly efficient and ultracompact structures for controlling mid-infrared radiation and accessing strong light-matter interactions with hBN.

Room Temperature Negative Differential Resistance with High Peak Current in MoS2/WSe2 Heterostructures.

Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p- and n-type materials without a lattice mismatch. Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostructures of MoS2 and WSe2 using van der Waals (vdW) contacts. The p-n junction shows negative differential resistance (NDR) due to Fowler-Nordheim (F-N) tunneling through the triangular barrier formed by applying a global back-gate bias (VGS). We also show that the integration of hexagonal boron nitride (h-BN) as an insulating tunnel barrier between MoS2 and WSe2 leads to the formation of sharp band edges and unintentional inelastic tunnelling current. The devices based on vdW contacts, global VGS, and h-BN tunnel barriers exhibit NDR with a peak current (Ipeak) of 315 µA, suggesting that the approach may be useful for applications.

Thermal Conductivity Enhancement of Polymeric Composites Using Hexagonal Boron Nitride: Design Strategies and Challenges.

With the integration and miniaturization of chips, there is an increasing demand for improved heat dissipation. However, the low thermal conductivity (TC) of polymers, which are commonly used in chip packaging, has seriously limited the development of chips. To address this limitation, researchers have recently shown considerable interest in incorporating high-TC fillers into polymers to fabricate thermally conductive composites. Hexagonal boron nitride (h-BN) has emerged as a promising filler candidate due to its high-TC and excellent electrical insulation. This review comprehensively outlines the design strategies for using h-BN as a high-TC filler and covers intrinsic TC and morphology effects, functionalization methods, and the construction of three-dimensional (3D) thermal conduction networks. Additionally, it introduces some experimental TC measurement techniques of composites and theoretical computational simulations for composite design. Finally, the review summarizes some effective strategies and possible challenges for the design of h-BN fillers. This review provides researchers in the field of thermally conductive polymeric composites with a comprehensive understanding of thermal conduction and constructive guidance on h-BN design.