Design and Simulation of InGaN-Based Red Vertical-Cavity Surface-Emitting Lasers.

We propose a highly polarized vertical-cavity surface-emitting laser (VCSEL) consisting of staggered InGaN multiple quantum wells (MQWs), with the resonance cavity and polarization enabled by a bottom nanoporous (NP) n-GaN distributed Bragg reflectors (DBRs), and top TiO2 high-index contrast gratings (HCGs). Optoelectronic simulations of the 612 nm VCSEL were systematically and numerically investigated. First, we investigated the influences of the NP DBR and HCG geometries on the optical reflectivity. Our results indicate that when there are more than 17 pairs of NP GaN DBRs with 60% air voids, the reflectance can be higher than 99.7%. Furthermore, the zeroth-order reflectivity decreases rapidly when the HCG's period exceeds 518 nm. The optimal ratios of width-to-period (52.86 ± 1.5%) and height-to-period (35.35 ± 0.14%) were identified. The staggered MQW design also resulted in a relatively small blue shift of 5.44 nm in the emission wavelength under a high driving current. Lastly, we investigated the cavity mode wavelength and optical threshold gain of the VCSEL with a finite size of HCG. A large threshold gain difference of approximately 67.4-74% between the 0th and 1st order transverse modes can be obtained. The simulation results in this work provide a guideline for designing red VCSELs with high brightness and efficiency.

Multi-moded high-index contrast optical waveguide for super-contrast high-resolution label-free microscopy.

The article elucidates the physical mechanism behind the generation of superior-contrast and high-resolution label-free images using an optical waveguide. Imaging is realized by employing a high index contrast multi-moded waveguide as a partially coherent light source. The modes provide near-field illumination of unlabeled samples, thereby repositioning the higher spatial frequencies of the sample into the far-field. These modes coherently scatter off the sample with different phases and are engineered to have random spatial distributions within the integration time of the camera. This mitigates the coherent speckle noise and enhances the contrast (2-10) × as opposed to other imaging techniques. Besides, the coherent scattering of the different modes gives rise to fluctuations in intensity. The technique demonstrated here is named chip-based Evanescent Light Scattering (cELS). The concepts introduced through this work are described mathematically and the high-contrast image generation process using a multi-moded waveguide as the light source is explained. The article then explores the feasibility of utilizing fluctuations in the captured images along with fluorescence-based techniques, like intensity-fluctuation algorithms, to mitigate poor-contrast and diffraction-limited resolution in the coherent imaging regime. Furthermore, a straight waveguide is demonstrated to have limited angular diversity between its multiple modes and therefore, for isotropic sample illumination, a multiple-arms waveguide geometry is used. The concepts introduced are validated experimentally via high-contrast label-free imaging of weakly scattering nanosized specimens such as extra-cellular vesicles (EVs), liposomes, nanobeads and biological cells such as fixed and live HeLa cells.

Perovskite Light-Emitting Diodes with Improved Outcoupling Using a High-Index Contrast Nanoarray.

Organic-inorganic hybrid perovskite light-emitting diodes (PeLEDs) are promising for next-generation optoelectronic devices due to their potential to achieve high color purity, efficiency, and brightness. Although the external quantum efficiency (EQE) of PeLEDs has recently surpassed 20%, various strategies are being pursued to increase EQE further and reduce the EQE gap compared to other LED technologies. A key point to further boost EQE of PeLEDs is linked to the high refractive index of the perovskite emissive layer, leading to optical losses of more than 70% of emitted photons. Here, it is demonstrated that a randomly distributed nanohole array with high-index contrast can effectively enhance outcoupling efficiency in PeLEDs. Based on a comprehensive optical analysis on the perovskite thin film and outcoupling structure, it is confirmed that the nanohole array effectively distributes light into the substrate for improved outcoupling, allowing for 1.64 times higher light extraction. As a result, highly efficient red/near-infrared PeLEDs with a peak EQE of 14.6% are demonstrated.

Visible Wavelength Color Filters Using Dielectric Subwavelength Gratings for Backside-Illuminated CMOS Image Sensor Technologies.

We report transmissive color filters based on subwavelength dielectric gratings that can replace conventional dye-based color filters used in backside-illuminated CMOS image sensor (BSI CIS) technologies. The filters are patterned in an 80 nm-thick poly silicon film on a 115 nm-thick SiO2 spacer layer. They are optimized for operating at the primary RGB colors, exhibit peak transmittance of 60-80%, and have an almost insensitive response over a ± 20° angular range. This technology enables shrinking of the pixel sizes down to near a micrometer.

Microstructured Air Cavities as High-Index Contrast Substrates with Strong Diffraction for Light-Emitting Diodes.

Two-dimensional high-index-contrast dielectric gratings exhibit unconventional transmission and reflection due to their morphologies. For light-emitting devices, these characteristics help guided modes defeat total internal reflections, thereby enhancing the outcoupling efficiency into an ambient medium. However, the outcoupling ability is typically impeded by the limited index contrast given by pattern media. Here, we report strong-diffraction, high-index-contrast cavity engineered substrates (CESs) in which hexagonally arranged hemispherical air cavities are covered with a 80 nm thick crystallized alumina shell. Wavelength-resolved diffraction measurements and Fourier analysis on GaN-grown CESs reveal that the high-index-contrast air/alumina core/shell patterns lead to dramatic excitation of the low-order diffraction modes. Large-area (1075 × 750 µm(2)) blue-emitting InGaN/GaN light-emitting diodes (LEDs) fabricated on a 3 µm pitch CES exhibit ∼39% enhancement in the optical power compared to state-of-the-art, patterned-sapphire-substrate LEDs, while preserving all of the electrical metrics that are relevant to LED devices. Full-vectorial simulations quantitatively demonstrate the enhanced optical power of CES LEDs and show a progressive increase in the extraction efficiency as the air cavity volume is expanded. This trend in light extraction is observed for both lateral- and flip-chip-geometry LEDs. Measurements of far-field profiles indicate a substantial beaming effect for CES LEDs, despite their few-micron-pitch pattern. Near-to-far-field transformation simulations and polarization analysis demonstrate that the improved extraction efficiency of CES LEDs is ascribed to the increase in emissions via the top escape route and to the extraction of transverse-magnetic polarized light.