Two-Dimensional SnSe2(1-x)S2x/MoTe2 Antiambipolar Transistors with Composition Modulation for Multivalued Inverters.

Two-dimensional (2D) van der Waals heterostructures that embody the electronic characteristics of each constituent material have found extensive applications. Alloy engineering further enables the modulation of the electronic properties in these structures. Consequently, we envisage the construction and modulation of composition-dependent antiambipolar transistors (AATs) using van der Waals heterostructures and alloy engineering to advance multivalued inverters. In this work, we calculate the electron structures of SnSe2(1-x)S2x alloys and determine the energy band alignment between SnSe2(1-x)S2x and 2H-MoTe2. We present a series of vertical AATs based on the SnSe2(1-x)S2x/MoTe2 type-III van der Waals heterostructure. These transistors exhibit composition-dependent antiambipolar characteristics through the van der Waals heterostructure, except for the SnSe2/MoTe2 transistor. The peak current (Ipeak) decreases from 43 nA (x = 0.25) to 0.8 nA (x = 1) at Vds = -2 V, while the peak-to-valley current ratio (PVR) increases from 4.5 (x = 0.25) to 6.7 × 103 (x = 1) with a work window ranging from 30 to 47 V. Ultimately, we successfully apply several specific SnSe2(1-x)S2x/MoTe2 devices in binary and ternary logic inverters. Our results underscore the efficacy of alloy engineering in modulating the characteristics of AATs, offering a promising strategy for the development of multivalued logic devices.

Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1-x Nanosheets for p-Type Transistors and Inverters.

Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1-x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1-x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se-Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1-x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V-1·s-1, being eight times higher than thermally evaporated SexTe1-x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V.

Improved control method of the paralleled three-phase two-level inverters for common-mode voltage and circulating current suppression.

The paralleled configuration of three-phase two-level (3P2L) inverters has been put forward to increase the output power rating, operating efficiency, and system reliability. Nevertheless, this architecture brings about the serious circulating current problem, which distorts the quality of output currents, results in additional power losses, and reduces the system efficiency. Another problem is the common-mode voltage (CMV), which causes electromagnetic interference and threatens the safe operation of the system. There exists interconnection between these two issues in the paralleled 3P2L inverters. To suppress the CMV and circulating current simultaneously, an improved control method is presented. At first, the discrete model of paralleled 3P2L inverters is established, based on which the improved control method is designed to restrain the circulating current, while the parameter tuning is avoided. In addition, the zero-sequence component injection associated with the optimized configuration of carrier phase is conducted, and the CMV magnitude of each inverter is limited within one-sixth of dc-side voltage. When comparing with the traditional space vector modulation (SVM) approach, the CMV magnitude is restrained by two-thirds by the presented method. The hardware-based evaluation results have been provided to validate the presented approach.

Conjugated Polymer Heteroatom Engineering Enables High Detectivity Symmetric Ambipolar Phototransistors.

Solution-processed high-performing ambipolar organic phototransistors (OPTs) can enable low-cost integrated circuits. Here, a heteroatom engineering approach to modify the electron affinity of a low band gap diketopyrrolopyrole (DPP) co-polymer, resulting in well-balanced charge transport, a more preferential edge-on orientation and higher crystallinity, is demonstrated. Changing the comonomer heteroatom from sulfur (benzothiadiazole (BT)) to oxygen (benzooxadiazole (BO)) leads to an increased electron affinity and introduces higher ambipolarity. Organic thin film transistors fabricated from the novel PDPP-BO exhibit charge carrier mobility of 0.6 and 0.3 cm2 Vs⁻1 for electrons and holes, respectively. Due to the high sensitivity of the PDPP-based material and the balanced transport in PDPP-BO, its application as an NIR detector in an OPT architecture is presented. By maintaining a high on/off ratio (9 × 104), ambipolar OPTs are shown with photoresponsivity of 69 and 99 A W⁻1 and specific detectivity of 8 × 107 for the p-type operation and 4 × 109 Jones for the n-type regime. The high symmetric NIR-ambipolar OPTs are also evaluated as ambipolar photo-inverters, and show a 46% gain enhancement under illumination.

Extension of Operating Range in Hybrid Cascaded H-Bridge Inverters with Capacitor Voltage Balancing Capability.

In this article, a generalized control scheme is proposed to extend the operating range of three-phase hybrid cascaded H-bridge (HCHB) inverters into various voltage levels without necessitating alterations to the core structure or the integration of additional H-bridge submodules. This study addresses a critical challenge related to capacitor voltage drift at various modulation indices and power factors, which is a serious impediment to various applications. To overcome this challenge, a novel balancing control scheme has been developed based on the injection of two independent offset voltages to simultaneously control the DC-link and flying capacitors. A distinctive aspect of the proposed technique involves adjusting the common reference voltage to attain the nearest level in the same cluster, thereby mitigating the insufficiency of redundant switching states. The effectiveness of the proposed technique to regulate the capacitor voltages at various operating conditions has been verified through simulation and experimental results.

In Situ Defect Engineering of Controllable Carrier Types in WSe2 for Homomaterial Inverters and Self-Powered Photodetectors.

WSe2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe2 is realized via in situ defect engineering. The n-doping of WSe2 is attributed to Se vacancies induced by the H2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe2. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.

Study of the Protection and Energy Transmission Modes of One Phase Short Circuit to Ground in Inverters.

Research indicates that phase-to-ground short-circuits in a frequency converter can subject the rectifier diode and IGBT to excessive voltage and current, potentially causing damage if the component selection margin during hardware design is insufficient. In order to solve the above problems, this paper studies the design of the LCL filter and ground short circuit problem of the hundred-kilowatt inverter. Firstly, an analytical method for calculating the DC bus capacitance and reactor of the inverter is proposed. The interaction between the DC bus capacitance and the reactor parameters and performance is considered in the implementation process. The parameters of the DC bus capacitor and reactor are given. Secondly, the one-to-ground short circuit of the inverter is studied, and the energy flow mode and mathematical expression of the double boost circuit, considering the influence of the leakage inductance of the power transformer, are given. Based on the above analysis, a method for determining the rectifier diode and IGBT, considering the one-to-ground short circuit of the inverter, is proposed. Finally, a one-hundred-kilowatt inverter is developed, and the corresponding experiments are carried out. The feasibility of the proposed scheme is verified by simulation and experiment.

Probing Optical Multi-Level Memory Effects in Single Core-Shell Quantum Dots and Application Through 2D-0D Hybrid Inverters.

Challenges in the development of a multi-level memory (MM) device for multinary arithmetic computers have posed an obstacle to low-power, ultra-high-speed operation. For the effective transfer of a huge amount of data between arithmetic and storage devices, optical communication technology represents a compelling solution. Here, by replicating a floating gate architecture with CdSe/ZnS type-I core/shell quantum dots (QDs), a 2D-0D hybrid optical multi-level memory (OMM) device operated is demonstrated by laser pulses. In the device, laser pulses create linear optically trapped currents with MM characteristics, while conversely, voltage pulses reset all the trapped currents at once. Assuming electron transfer via the energy band alignment between MoS2 and CdSe, the study also establishes the mechanism of the OMM effect. Analysis of the designed device led to a new hypothesis that charge transfer is difficult for laterally adjacent QDs facing a double ZnS shell, which is tested by separately stimulating different positions on the 2D-0D hybrid structure with finely focused laser pulses. Results indicate that each laser pulse induced independent MM characteristics in the 2D-0D hybrid architecture. Based on this phenomenon, we propose a MM inverter to produce MM effects, such as programming and erasing, solely through the use of laser pulses. Finally, the feasibility of a fully optically-controlled intelligent system based on the proposed OMM inverters is evaluated through a CIFAR-10 pattern recognition task using a convolutional neural network.

Three-Phase Motor Inverter and Current Sensing GaN Power IC.

A three-phase GaN-based motor inverter IC with three integrated phase current mirror sensors (sense-FETs or sense-HEMTs, 1200:1 ratio), a temperature sensor, and an amplifier is presented and experimentally operated. The three low-side currents are read out by virtual grounding transimpedance amplifiers. A modified summed DC current readout circuit using only one amplifier is also discussed. During continuous 24 V motor operation with space-vector pulse width modulation (SVPWM), the sensor signal is measured and a bidirectional measurement capability is verified. The measured risetime of the sensor signal is 51 ns, indicating around 7 MHz bandwidth (without intentional optimization for high bandwidth). The IC is operated up to 32 V on DC-biased semi-floating substrate to limit negative static back-gating of the high-side transistors to around -7% of the DC-link voltage. Analysis of the capacitive coupling from the three switch-nodes to the substrate is calculated for SVPWM based on capacitance measurement, resulting in four discrete semi-floating substrate voltage levels, which is experimentally verified. Integrated advanced power converter topologies with sensors improve the power density of power electronics applications, such as for low-voltage motor drive.

Ultrafast-Programmable 2D Homojunctions Based on van der Waals Heterostructures on a Silicon Substrate.

The development of electrically ultrafast-programmable semiconductor homojunctions can lead to transformative multifunctional electronic devices. However, silicon-based homojunctions are not programmable so that alternative materials need to be explored. Here 2D, multi-functional, lateral homojunctions made of van der Waals heterostructures with a semi-floating-gate configuration on a p++ Si substrate feature atomically sharp interfaces and can be electrostatically programmed in nanoseconds, more than seven orders of magnitude faster than other 2D-based homojunctions. By applying voltage pulses with different polarities, lateral p-n, n+ -n and other types of homojunctions can be formed, varied, and reversed. The p-n homojunctions possess a high rectification ratio of up to ≈105 and can be dynamically switched between four distinct conduction states with the current spanning over nine orders of magnitude, enabling them to function as logic rectifiers, memories, and multi-valued logic inverters. Built on a p++ Si substrate, which acts as the control gate, the devices are compatible with Si technology.

Design and implementation of optimized virtual oscillatory controllers for grid-forming inverters.

The percentage of renewable power in conventional power generation is gradually growing due to developments in power electronic converters (PECs). Renewable energy sources (RESs) can be integrated into the main grid through PECs, which are the most prevalent method to accomplish this. Virtual oscillator control (VOC) is a well-known time-domain method to regulate grid-forming inverters. VOC objective is to model the nonlinear dynamics of deadzone oscillator in a system of voltage source inverters to give a steady AC microgrid (MG). VOC is a self-synchronizing control method that just involves the current feedback signal. In contrast, classical droop and virtual synchronous machine (VSM) controllers both require the use of low pass filters to calculate real and reactive powers. The selection of control parameters in deadzone VOC is difficult and time-consuming. The VOC parameters are designed using different optimization techniques such as Particle Swarm Optimization (PSO), Sine Cosine Algorithm (SCA), modified Sine Cosine Algorithm (mSCA), African Vulture Optimization Algorithm (AVOA), and Artificial Jellyfish Search Optimization (AJSO). MATLAB and a real-time digital simulator (Opal RT-OP5142) were used to examine the system's performance with aforesaid controllers (droop, VSM, conventional VOC, VOC-PSO, VOC-SCA, VOC-mSCA, VOC-AVOA, and VOC-AJSO). In comparison to all control methods, the proposed VOC-AJSO provides faster synchronization. The effectiveness of the suggested VOC-AJSO control approach is proved by the hardware results.

A flexible power electronic converter system with rapid control prototyping for research and teaching.

A flexible power electronic converter embedding a rapid control prototyping platform suitable to be applied in research test setups and teaching laboratories is proposed and described in this paper. The electronic system is composed of three subsystems, namely, i) three half-bridge power boards, ii) a dc-link capacitor bank with a half-bridge power module for active dc-link control, iii) an interfacing board, called motherboard, to couple the power modules with a control unit, iv) a digital control unit with rapid control prototyping functionalities for controlling power electronic circuits. Power modules integrate sensors with related conditioning circuits, driving circuits for power switches, and protection circuits. Conversion circuits exploit GaN electronic switches for optimal performance. The architecture and implementation of the system are described in detail in this manuscript. Main applications are in the implementation of conversion circuits for supplying arbitrary ac or dc voltages or currents, testing of new control algorithms for power electronic converters, testing of systems of electronic converters in, for example, smart nanogrids or renewable energy applications, training of undergraduate and graduate students.

Verification of simplified model of inverter-Motor stator system.

A simplified inverter-motor stator system model is presented in the paper. The model is based on elementary dynamic blocks described by differential equations. The paper presents the results of research aimed at verifying the model on different devices with different types of inverters and motors. Model accuracy coefficients have been developed for all examined cases, confirming the high conformity of the model to the measured speeds and torques of asynchronous motors. The model was also used to simulate the operation of a drive system with a synchronous motor, obtaining high compliance of speed and torque mapping. The presented cases of verification of a simplified model confirm the possibility of using it to model different devices fed by frequency inverters, controlled both manually and automatically. The presented model, using simple description, ensures high accuracy of speed and torque mapping. It should be emphasized that most parameters in the presented model are calculated for motors and inverters based on data sheets.

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays.

High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors (FETs) and great potential for applications in future digital integrated circuits (ICs). However, high-performance N-type FETs (N-FETs) have not yet been implemented with A-CNTs, making development of complementary metal-oxide-semiconductor (CMOS) technology, a necessary component for modern digital ICs, impossible. In this work, we reveal the mechanism hindering the realization of A-CNT N-FETs contacted by low-work-function metals and develop corresponding solutions to promote the performance of N-FETs to that of P-type FETs (P-FETs). The fabricated scandium (Sc)-contacted A-CNT N-FET with a 100 nm gate length exhibits an on-state current (Ion) of 800 µA/µm and a peak transconductance (gm) of 250 µS/µm, representing the highest performance of CNT-based N-FETs to date. Moreover, CMOS technology has been developed to realize N- and P-FETs with symmetric high performance based on A-CNTs. The fabricated A-CNT CMOS FETs show electron and hole mobilities of 325 and 241 cm2 V-1 s-1, respectively, which are slightly higher than the corresponding values of Si CMOS transistors. Our scalable fabrication of A-CNT CMOS FETs with comparable electronic performance to Si CMOS will promote the application of CNT-based electronics in digital ICs.

Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts.

Owing to their practical applications, two-dimensional semiconductor p-n diodes have attracted enormous attention. Over the past decade, various methods, such as chemical doping, heterojunction structures, and metallization using metals with different work functions, have been reported for fabrication of such devices. In this study, a lateral p-n junction diode is formed in tungsten diselenide (WSe2 ) using a combination of edge and surface contacts. The appearance of amorphous tungsten oxide at etched WSe2 , and the formation of a junction near the edge contact, are verified by high-resolution transmission electron microscopy. The device demonstrates high on/off ratio for both the edge and surface contacts, with respective values of 107 and 108 . The diode can achieve extremely high mobility of up to 168 cm2 V-1 s-1 and a rectification ratio of 103 . The ideality factor is 1.11 at a back gate voltage VG   = 60 V at 300 K. The devices with encapsulation of hexagonal boron nitride exhibit good stability to atmospheric exposure, over a measured period of 2 months. In addition, the architecture of the contacts, which is based on a single-channel device, should be advantageous for the implementation of more complicated applications such as inverters, photodetectors, and light-emitting diodes.

Converting data into knowledge with RCA methodology improved for inverters fault analysis.

In the last years, the knowledge management methodology increased the perspective and deeply analysis in the energy evaluation, with great emphasis in the training of the maintenance teams and early detection of failure modes; these inefficiencies detection is associated to patterns recognition with expert systems. Several energy brands, utilities, universities, and design companies investigated about this problem with limits in the integration between maintenance team knowledge and the degradation of the energy equipment. Therefore, our findings are a new approach of the root cause analysis (RCA) improved with the knowledge management perspective, associated to the failure mode analysis for 164 inverters in photo-voltaic solar plant by using twenty-one failures modes; by incorporate the graph theory called Erdös-Rényi graphs with a quantitative methodology and qualitative evaluation with the knowledge management method in the root cause analysis; the dataset evaluated has 120,561 signals associated to 3,014,025 patterns, during the period from 2018 to 2021 in a PV solar plant. In this new root cause analysis method, the knowledge management is analyzed as a complement for the solution for sudden failure modes and early degradation.

High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates.

The major limitations of solution-processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully-printed narrow-channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In2 O3 nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In2 O3 layer and thereby obtain near-vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈106 and simultaneous maximum current density of 172 µA µm-1 . Next, the depletion-load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of VDD = 2 V. In addition, the near-vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.

Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices.

Two-dimensional (2D) devices and their van der Waals (vdW) heterostructures attract considerable attention owing to their potential for next-generation logic and memory applications. In addition, 2D devices are projected to have high integration capabilities, while maintaining nanoscale thickness. However, the fabrication of 2D devices and their circuits is challenging because of the high precision required to etch and pattern ultrathin 2D materials for integration. Here, the fabrication of a graphene via contact architecture to electrically connect graphene electrodes (or leads) embedded in vdW heterostructures is demonstrated. Graphene via contacts comprising of edge and fluorinated graphene (FG) electrodes are fabricated by successive fluorination and plasma etching processes. A one-step fabrication process that utilizes the graphene contacts is developed for a vertically integrated complementary inverter based on n- and p-type 2D field-effect transistors (FETs). This study provides a promising method to fabricate vertically integrated 2D devices, which are essential in 2D material-based devices and circuits.

Application of a Control Scheme Based on Predictive and Linear Strategy for Improved Transient State and Steady-State Performance in a Single-Phase Quasi-Z-Source Inverter.

Z and quasi-Z-source inverters (Z/qZSI) have a nonlinear impedance network on their dc side, which allows the system to behave as a buck-boost converter in their outputs. The challenges derived from the qZSI topology include (a) the control of the voltage and current on its nonlinear impedance network, (b) the dynamic coupling between the ac and dc variables, and (c) the fact that a unique set of switches are used to manage the power at dc and ac side of the system. In this work, a control scheme that combines a PWM linear control strategy and a strategy based on finite control state model predictive control (FCS-MPC) is proposed. The linear approach works during steady state, while the FCS-MPC works during transient states, either in the start-up of the converter or during sudden reference changes. This work aims to show that the performance of this control proposal retains the best characteristics of both schemes, which allows it to achieve high-quality waveforms and error-free steady state, as well as a quick dynamic response during transients. The feasibility of the proposal is validated through experimental results.

Adaptive Biosensing and Neuromorphic Classification Based on an Ambipolar Organic Mixed Ionic-Electronic Conductor.

Organic mixed ionic-electronic conductors (OMIECs) are central to bioelectronic applications such as biosensors, health-monitoring devices, and neural interfaces, and have facilitated efficient next-generation brain-inspired computing and biohybrid systems. Despite these examples, smart and adaptive circuits that can locally process and optimize biosignals have not yet been realized. Here, a tunable sensing circuit is shown that can locally modulate biologically relevant signals like electromyograms (EMGs) and electrocardiograms (ECGs), that is based on a complementary logic inverter combined with a neuromorphic memory element, and that is constructed from a single polymer mixed conductor. It is demonstrated that a small neuromorphic array based on this material effects high classification accuracy in heartbeat anomaly detection. This high-performance material allows for straightforward monolithic integration, which reduces fabrication complexity while also achieving high on/off ratios with excellent ambient p- and n-type stability in transistor performance. This material opens a route toward simple and straightforward fabrication and integration of more sophisticated adaptive circuits for future smart bioelectronics.