A Multiferroic Spin-Crossover Molecular Crystal.

Spin-crossover (SCO) ferroelectrics with dual-function switches have attracted great attention for significant magnetoelectric application prospects. However, the multiferroic crystals with SCO features have rarely been reported. Herein, a molecular multiferroic Fe(II) crystalline complex [FeII(C8-F-pbh)2] (1-F, C8-F-pbh = (1Z,N'E)-3-F-4-(octyloxy)-N'-(pyridin-2-ylmethylene)-benzo-hydrazonate) showing the coexistence of ferroelectricity, ferroelasticity, and SCO behavior is presented for the first time. By H/F substitution, the low phase transition temperature (270 K) of the non-fluorinated parent compound is significantly increased to 318 K in 1-F, which exhibits a spatial symmetry breaking 222F2 type ferroelectric phase transition with clear room-temperature ferroelectricity. Besides, 1-F also displays a spin transition between high- and low-spin states, accompanied by the d-orbital breaking within the t2g 4eg 2 and t2g 6eg° configuration change of octahedrally coordinated FeII center. Moreover, the 222F2 type ferroelectric phase transition is also a ferroelastic one, verified by the ferroelectric domains reversal and the evolution of ferroelastic domains. To the knowledge, 1-F is the first multiferroic SCO molecular crystal. This unprecedented finding sheds light on the exploration of molecular multistability materials for future smart devices.

Enhanced multiferroic properties of NZCFO-BNFSO composites: Synthesis, characterization, and performance analysis.

The structural and multiferroic properties of xNi0.24Zn0.58Cu0.18Fe2O4(NZCFO)-(1-x)Bi0.9Nd0.1Fe0.95 Sc0.05O3(BNFSO) are explored in this paper. Bi2O3 additives significantly lower the sintering temperature of the composites. The XRD analysis validates the coexistence of hexagonal perovskite BNFSO and spinel NZCFO phases. The FESEM images illustrate an almost homogeneous amalgamation of the BNFSO and NZCFO grains. The real part of initial permeability and the relative quality factor increases with NZCFO contents in the composites. The maximum permeability is observed for the composite with 80 % ferrite content. The ferroelectric BNFSO exhibits antiferromagnetic behavior and with the increase in NZCFO the saturation magnetization increases significantly. The dielectric constant confirms typical dielectric dispersion at low frequencies because of Maxwell-Wagner space charge polarization. The P-E hysteresis measurement reveals that the composite with 40 % ferrite content exhibits the highest loop area and hence a large energy storage capacity. Incorporating BNFSO and NZCFO into the composite boosts the multiferroic properties, which might be a suitable alternative to single-phase multiferroics.

Magnetic-anisotropy modulation in multiferroic heterostructures by ferroelectric domains from first principles.

First-principles calculations incorporating spin-orbit coupling are presented for a multiferroic material as a ferromagnetic/ferroelectric junction. We simulate the interface effect that cannot be described by the single-phase bulk. The in-plane uniaxial magnetic-anisotropy of Co2FeSi is observed when the ferroelectric domain is polarized parallel to the interface, whereas the magnetic anisotropy is significantly different in the plane for the electrical polarization perpendicular to the interface. While the single-phase effect dominates the main part of the modulation of the magnetic anisotropy, symmetry breaking due to the interfacial effect is observed in the ferromagnetic ultrathin films. The origin of the modulated magnetic-anisotropy can be attributed to the shifting of specific energy bands in Co2FeSi when the ferroelectric domain is modified.

The origin of strain-induced magnetocrystalline anisotropy in multiferroic Co₂FeSi/BaTiO₃(001) heterostructures is clarified by first-principles electron theory. The magnetic anisotropy is modified by interface effects for ultrathin Co₂FeSi films.

Altermagnetism Induced by Sliding Ferroelectricity via Lattice Symmetry-Mediated Magnetoelectric Coupling.

Altermagnets, distinct from conventional ferromagnets or antiferromagnets, have recently attracted attention as the third category of collinear magnets, which exhibit the coexistence of zero net magnetization and spin polarization due to their unique lattice symmetries. Meanwhile, the additional layer degrees of freedom in multilayer sliding ferroelectrics offer opportunities for coupling with lattice symmetries, paving the way for an innovative approach to constructing multiferroic lattices. In this study, altermagnetic tuning in SnS2/MnPSe3/SnS2 heterostructures is achieved by breaking and restoration of lattice inversion symmetry through sliding ferroelectric switching. First-principles calculations reveal that the spin density and corresponding time-reversal symmetry of MnPSe3 can be manipulated by lattice symmetry, triggering phase transitions between antiferromagnetism and altermagnetism. This research establishes a novel form of magnetoelectric coupling mediated by lattice symmetry and provides a theoretical basis for the design of miniature information processing and memory devices based on altermagnetism.

Electric-Field Manipulation of Magnetic Chirality in a Homo-Ferro-Rotational Helimagnet.

Ferro-rotational (FR) materials, renowned for their distinctive material functionalities, present challenges in the growth of homo-FR crystals (i.e., single FR domain). This study explores a cost-effective approach to growing homo-FR helimagnetic RbFe(SO4)2 (RFSO) crystals by lowering the crystal growth temperature below the TFR threshold using the high-pressure hydrothermal method. Through polarized neutron diffraction experiments, it is observed that nearly 86% of RFSO crystals consist of a homo-FR domain. Notably, RFSO displays remarkable stability in the FR phase, with an exceptionally high TFR of ≈573 K. Furthermore, RFSO exhibits a chiral helical magnetic structure with switchable ferroelectric polarization below 4 K. Importantly, external electric fields can induce a single magnetic domain state and manipulate its magnetic chirality. The findings suggest that the search for new FR magnets with outstanding material properties should consider magnetic sulfates as promising candidates.

Ferroelectricity-controlled magnetic ordering and spin photocurrent in NiCl2/GeS multiferroic heterostructures.

Controlling magnetism solely through electrical means is indeed a significant challenge, yet holds great potential for advancing information technology. Herein, our investigation presents a promising avenue for electrically manipulating magnetic ordering within 2D van der Waals NiCl2/GeS heterostructures. These heterostructures, characterized by their unique magnetic-ferroelectric (FE) layer stacking, demonstrate spin-constrained photoelectric memory, enabling low-power electrical writing and non-destructive optical reading. The two orientations of the polarization in the GeS FE layer bring about changes in the ground state configuration, transitioning from ferromagnetic (FM) to antiferromagnetic (AFM) orderings within the NiCl2magnetic layer. Correspondingly, the light-induced charge transfer prompts either spin-polarized or unpolarized currents from the FM or AFM states, serving as distinct '1' or '0' states, and facilitating applications in logic processing and memory devices. This transition stems from the interplay of interfacial charge transfer mechanisms and the influence of the effective electric field (Eeff), bringing a non-volatile electric enhancement in the magnetic anisotropy energy within the NiCl2/GeS heterostructure. Overall, our study highlights the NiCl2/GeS heterostructure as an optimal candidate for realizing spin-dependent photoelectric memory, offering unprecedented opportunities for seamlessly integrating memory processing capabilities into a single device through the utilization of layered multiferroic heterostructures.

Robust Ferrimagnetism and Ferroelectricity in 2D ɛ-Fe2O3 Semiconductor with Ultrahigh Ordering Temperature.

2D single-phase multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high-density multilevel data storage. One of the current limitations for application is the scarcity of the materials, especially those combine ferromagnetism and ferroelectricity at high temperatures. Here, robust ferrimagnetism and ferroelectricity in 2D ɛ-Fe2O3 samples with both single-crystalline and polycrystalline form are demonstrated. Interestingly, the polycrystalline nanosheets also exhibit easily switchable ferroelectric polarizations comparable to that of single crystals. The existence of grain boundary does not hinder the switching and retention of ferroelectric polarization. Furthermore, the ɛ-Fe2O3 nanosheets show ferrimagnetic and ferroelectric Curie temperatures up to 800 K, which reaches record highs in 2D single-phase multiferroic materials. This work provides important progress in the exploration of 2D high-temperature single-phase multiferroics for potentially compact high-temperature information nanodevices.

Toward Fully Multiferroic van der Waals SpinFETs: Basic Design and Quantum Calculations.

Manipulating spin transport enhances the functionality of electronic devices, allowing them to surpass physical constraints related to speed and power. For this reason, the use of van der Waals multiferroics at the interface of heterostructures offers promising prospects for developing high-performance devices, enabling the electrical control of spin information. Our work focuses primarily on a mechanism for multiferroicity in two-dimensional van der Waals materials that stems from an interplay between antiferromagnetism and the breaking of inversion symmetry in certain bilayers. We provide evidence for spin-electrical couplings that include manipulating van der Waals multiferroic edges via external voltages and the subsequent control of spin transport including for fully multiferroic spin field-effect transistors.

Synthesis and high-frequency magnetoelectric characterization of the 0-3 particulate lead-free multiferroic composite KNN/CFO.

The research for lead-free magnetoelectric (ME) multiferroic composite materials has increased considerably because they are environmentally friendly. For composites with 0-3 connectivity, synthesis with lead-free phase has proven challenging to obtain high values of ME coupling. This work reports the successful synthesis of the KNN/CFO composite (K0.5N0.5NbO3/CoFe2O4) by conventional synthesis process. XRD and SEI showed two well-defined, also presenting good electric polarization values. The ME coefficient was very high, reaching values close to 2850 mV cm-1·Oe at the electromechanical resonance frequency. The dipolar interaction between the electric charges and magnetic moments of the KNN and CFO phases was responsible for the high value and the behavior of dependence on the applied magnetic field.

Magnetoelectric Properties of Multiferroic Composites Based on BaTiO3 and Nickel-Zinc Ferrite Material.

The purpose of the present study was to learn the morphological, structural, ferroelectric, dielectric, electromechanical, magnetoelectric, and magnetic properties, and DC conductivity of BaTiO3-Ni0.64Zn0.36Fe2O4 (BT-F) multiferroic composites compacted via the free sintering method. The influence of the ferrite content in ceramic composite materials on the functional properties is investigated and discussed. X-ray diffraction studies confirmed the presence of two main phases of the composite, with strong reflections originating from BaTiO3 and weak peaks originating from nickel-zinc ferrite. BT-F ceramic composites have been shown to exhibit multiferroism at room temperature. All studied compositions have high permittivity values and low dielectric loss, while the ferroelectric properties of the BT component are maintained at a high level. On the other hand, magnetic properties depend on the amount of the ferrite phase and are the strongest for the composition with 15 wt.% of F (magnetization at RT is 4.12 emu/g). The magnetoelectric coupling between BT and F phases confirmed by the lock-in technique is the largest for 15 wt.% ferrite. In the present work, the process conditions of the free sintering method for obtaining BT-F multiferroic composite with good electrical and magnetic properties (in one material) were optimized. An improved set of multifunctional properties allows the expansion of the possibilities of using multiferroic composites in microelectronics.

Magnetic Phase Transition-Induced Modulation of Ferroelectric Properties in Hexagonal RFeO3 (R = Tb and Ho).

Hexagonal rare-earth iron oxides (h-RFeO3) exhibit spontaneous magnetization and room-temperature ferroelectricity simultaneously. However, achieving a large magnetoelectric coupling necessitates further exploration. Herein, we report the impact of the magnetic phase transition on the ferroelectric properties of epitaxial h-RFeO3 (R = Tb and Ho) films prepared by pulsed laser deposition. The metastable h-RFeO3 phase is successfully stabilized with high crystallinity and low leakage current due to the ITO buffer layer, making it possible to investigate the ferroelectric properties. The h-TbFeO3 film exhibits a magnetic-field-induced transition from antiferromagnetic (AFM) to weak ferromagnetic (wFM) phases below 30 K, while also exhibiting ferroelectricity at 300 K. The dielectric constants change with the magnetic phase transition, demonstrating hysteresis in the magnetocapacitance. In contrast, the h-HoFeO3 film exhibits antiferroelectric-like behavior and an AFM-wFM phase transition. Notably, the h-HoFeO3 film shows a rapid increase in the remnant polarization during the AFM-wFM phase transition accompanied by an increase in the ferroelectric component. Considering the strong connection between the antiferroelectric behavior in the h-RFeO3 system and the ferroelectric domain wall motion, this considerable modification of ferroelectric properties during the magnetic phase transition is probably due to the faster movement of the ferroelectric domain walls in the wFM phase induced by the clamping effect. Our findings indicate the effectiveness of magnetic phase transitions in enhancing the magnetoelectric coupling, particularly when utilizing domain wall clamping properties.

Low-Frequency Resonant Magnetoelectric Effect in a Piezopolymer-Magnetoactive Elastomer Layered Structure at Different Magnetization Geometries.

The search for novel materials with enhanced characteristics for the advancement of flexible electronic devices and energy harvesting devices is currently a significant concern. Multiferroics are a prominent example of energy conversion materials. The magnetoelectric conversion in a flexible composite based on a piezopolymer layer and a magnetic elastomer layer was investigated. The study focused on investigating the dynamic magnetoelectric effect in various configurations of external alternating and constant homogeneous magnetic fields (L-T and T-T configurations). The T-T geometry exhibited a two orders of magnitude higher coefficient of the magnetoelectric effect compared to the L-T geometry. Mechanisms of structure bending in both geometries were proposed and discussed. A theory was put forward to explain the change in the resonance frequency in a uniform external field. A giant value of frequency tuning in a magnetic field of up to 362% was demonstrated; one of the highest values of the magnetoelectric effect yet recorded in polymer multiferroics was observed, reaching up to 134.3 V/(Oe∙cm).

Microstructure and Magnetic Properties of Fe67.6-Pd32-In0.4 (at.%) Shape Memory Melt-Spun Ribbons.

Fe-~30 at.%Pd is a ferromagnetic shape memory alloy (SMA) with a reversible thermoelastic fcc-fct phase transformation. The advantage of adding a small amount of Indium to Fe-Pd SMAs is, among other things, the upward shift of the transformation temperatures, which allows us to maintain the material in the martensitic state (fct structure) at room temperature. In this work, we study the microstructure and the magnetic properties of nominally Fe67.6-Pd32-In0.4 (at.%) melt-spun ribbons. Energy-dispersive spectroscopy analysis showed a certain level of non-uniformity of Indium distribution in the as-spun ribbon. However, the attempt to homogenize the ribbon by annealing at 1273 K for 120 h resulted in an unfavoured structural change to bct martensite. Magneto strains induced by a 9 kOe magnetic field reached over 400 ppm for certain field orientations, which is around four times more than the magneto strains of near-binary Fe-Pd shape memory alloys.

Shear horizontal waves in a multiferroic composite semiconductor structure.

Piezoelectric semiconductors (PSs) possess the physical properties of piezoelectric and semiconductor simultaneously. When a piezomagnetic (PM) material is added to the PS, the composite structures will exhibit the comprehensive mageto-electro-semiconductive (MES) coupling effects. In this paper, the propagation characteristics of shear horizontal (SH) waves in a multiferroic composite semiconductor structure are investigated, where a n-type PS thin plate is perfectly bonded to a semi-infinite PM substrate. Based on the three-dimensional macroscopic theory for PS and PM, the dispersion equations are derived analytically. Numerical examples are presented to study the effects of steady-state carrier density, cover thickness, and material properties on the phasevelocity and attenuation of SH wave systematically. The developments of various electromechanical fields through the thickness of the layers are discussed. The results show that initial electron concentration (n0) has an important effect on the distribution of most physical quantities such as displacement, stress, electric potential and electric polarization, but magnetic potential and magnetic flux density are insensitive to n0. The piezoelectric constant e15 and piezomagnetic constant f15 have different effects on the SH wave propagation and magnetic potential distribution. The theoretical results could be helpful for the analysis and design of PS-PM structures or related surface acoustic wave (SAW) devices.

Dielectric and Magnetoelectric Properties of TGS-Magnetite Composite.

In our studies, we combined two powdered materials, i.e., ferroelectric triglycine sulfate (TGS) and ferrimagnetic magnetite Fe3O4, to obtain a magnetoelectric composite. The ferroelectric (E) part, i.e., TGS, was a hybrid organic-inorganic crystal, which we obtained as a pure single crystal from an aqueous solution using a static water evaporation method. The magnetic (M) part of the composite was commercially available magnetite. The samples used for the dielectric and magnetoelectric measurements were cold-pressed and made in the form of a circular tablet. The measuring electrodes were made of silver-based conductive paste and were attached to the sample. We measured the temperature dependencies of selected electrical parameters (e.g., dielectric permittivity, electrical capacity, and loss angle tangent). We used the dynamic lock-in method to check whether magnetoelectric coupling existed between the E and M phases. In this paper, we present the dielectric properties of pure monocrystalline TGS as a reference sample and compare the results for TGS powder, TGS + carbon powder, and TGS + Fe3O4 powder. The magnetoelectric coupling presumably appeared for the composite TGS + 10 wt. % Fe3O4, as evidenced by the shift in the phase transition temperature in the TGS. Moreover, the theoretical interpretation of the effect is proposed.

Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets.

Magneto-optical effects (MOE), interfacing the fundamental interplay between magnetism and light, have served as a powerful probe for magnetic order, band topology, and valley index. Here, based on multiferroic and topological bilayer antiferromagnets (AFMs), we propose a layer control of MOE (L-MOE), which is created and annihilated by layer-stacking or an electric field effect. The key character of L-MOE is the sign-reversible response controlled by ferroelectric polarization, the Néel vector, or the electric field direction. Moreover, the sign-reversible L-MOE can be quantized in topologically insulating AFMs. We reveal that the switchable L-MOE originates from the combined contributions of spin-conserving and spin-flip interband transitions in spin-valley splitting AFMs, a phenomenon not observed in conventional AFMs. Our findings bridge the ancient MOE to the emergent realms of layertronics, valleytronics, and multiferroics and may hold immense potential in these fields.

Engineering Layertronics in Two-Dimensional Ferromagnetic Multiferroic Lattice.

Layertronics, rooted in the layer Hall effect (LHE), is an emerging fundamental phenomenon in condensed matter physics and spintronics. So far, several theoretical and experimental proposals have been made to realize LHE, but all are based on antiferromagnetic systems. Here, using symmetry and tight-binding model analysis, we propose a general mechanism for engineering layertronics in a two-dimensional ferromagnetic multiferroic lattice. The physics is related to the band geometric properties and multiferroicity, which results in the coupling between Berry curvature and layer degree of freedom, thereby generating the LHE. Using first-principles calculations, we further demonstrate this mechanism in bilayer (BL) TcIrGe2S6. Due to the intrinsic inversion and time-reversal symmetry breakings, BL TcIrGe2S6 exhibits multiferroicity with large Berry curvatures at both the center and corners of the Brillouin zone. These Berry curvatures couple with the layer physics, forming the LHE in BL TcIrGe2S6. Our work opens a new direction for research on layertronics.

Coexisting Magnetism, Ferroelectric, and Ferrovalley Multiferroic in Stacking-Dependent Two-Dimensional Materials.

Two-dimensional (2D) multiferroic materials have widespread application prospects in facilitating the integration and miniaturization of nanodevices. However, the magnetic, ferroelectric, and ferrovalley properties in one 2D material are rarely coupled. Here, we propose a mechanism for manipulating magnetism, ferroelectric, and valley polarization by interlayer sliding in a 2D bilayer material. Monolayer GdI2 is a ferromagnetic semiconductor with a valley polarization of up to 155.5 meV. More interestingly, the magnetism and valley polarization of bilayer GdI2 can be strongly coupled by sliding ferroelectricity, making these tunable and reversible. In addition, we uncover the microscopic mechanism of the magnetic phase transition by a spin Hamiltonian and electron hopping between layers. Our findings offer a new direction for investigating 2D multiferroic devices with implications for next-generation electronic, valleytronic, and spintronic devices.

Switching Intrinsic Magnetic Skyrmions with Controllable Magnetic Anisotropy in van der Waals Multiferroic Heterostructures.

Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet challenging for such applications. Based on first-principles studies, we find that switching between intrinsic magnetic skyrmion and high-temperature ferromagnetic states can be achieved in the two-dimensional van der Waals (vdW) multiferroic heterostructure CrSeI/In2Te3 by reversing the ferroelectric polarization of In2Te3. The core mechanism of this switching is traced to the controllable magnetic anisotropy of CrSeI influenced by the ferroelectric polarization of In2Te3. We propose a useful descriptor linking the presence of magnetic skyrmions to magnetic parameters and validate this connection through studies of a variety of similar vdW multiferroic heterostructures. Our work demonstrates that manipulating magnetic skyrmions via tunable magnetic anisotropies in vdW multiferroic heterostructures represents a highly promising and energy-efficient strategy for the future development of spintronics.

Ptychographic Nanoscale Imaging of the Magnetoelectric Coupling in Freestanding BiFeO3.

Understanding the magnetic and ferroelectric ordering of magnetoelectric multiferroic materials at the nanoscale necessitates a versatile imaging method with high spatial resolution. Here, soft X-ray ptychography is employed to simultaneously image the ferroelectric and antiferromagnetic domains in an 80 nm thin freestanding film of the room-temperature multiferroic BiFeO3 (BFO). The antiferromagnetic spin cycloid of period 64 nm is resolved by reconstructing the corresponding resonant elastic X-ray scattering in real space and visualized together with mosaic-like ferroelectric domains in a linear dichroic contrast image at the Fe L3 edge. The measurements reveal a near perfect coupling between the antiferromagnetic and ferroelectric ordering by which the propagation direction of the spin cycloid is locked orthogonally to the ferroelectric polarization. In addition, the study evinces both a preference for in-plane propagation of the spin cycloid and changes of the ferroelectric polarization by 71° between multiferroic domains in the epitaxial strain-free, freestanding BFO film. The results provide a direct visualization of the strong magnetoelectric coupling in BFO and of its fine multiferroic domain structure, emphasizing the potential of ptychographic imaging for the study of multiferroics and non-collinear magnetic materials with soft X-rays.