Regulating the electronic structure by P-doping cobalt-based catalyst for atomic hydrogen mediated electrocatalytic dechlorination.

Electrocatalytic dechlorination by atomic hydrogen (H*) is efficient, but limited by the low efficiency of H* production. Herein, a phosphorus-doped cobalt nitrogen carbon catalyst (Co-NP/C) was prepared, which had high catalytic activity in a wide pH range (3-11). The turnover frequency of Co-NP/C (3.54 min-1) was 1.21-59000 times superior to that of current Pd-based and non-noble metal catalysts (0.00006-2.92 min-1). Co-NP/C significantly enhanced H* generation, which was 1.52, 2.44, and 3.77 times stronger than that of Co-N/C, NP/C, and N/C, respectively, since the introduction of phosphorus was found enhanced the electron density of cobalt and regulated the electron transfer. Co-NP/C showed outstanding catalytic performance after ten cycles and could achieve nearly complete chloramphenicol removal. This regulation method was verified to be effective for other non-noble metal (Fe, Mn, Cu, Ni) phosphorus doped catalysts, proposing a general class for efficient electrochemical dechlorination, which would be of great significance for the elimination of chlorinated organic pollutants.

Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications.

Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications. In particular, emerging photoelectrochemical (PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics. Herein, a PEC-type photosensor was carefully designed and constructed by employing gallium nitride (GaN) p-n homojunction semiconductor nanowires on silicon, with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide (CoNiOx). Essentially, the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface, while CoNiOx decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface. Consequently, the constructed photosensor achieves a high responsivity of 247.8 mA W-1 while simultaneously exhibiting excellent operating stability. Strikingly, based on the remarkable stability and high responsivity of the device, a glucose sensing system was established with a demonstration of glucose level determination in real human serum. This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.

Robust Activity and Stability of P-Doped Fe-Carbon Composites Derived from MOF for Bromate Reduction.

Iron-based materials are effective for the reductive removal of the disinfection byproduct bromate in water, while the construction of highly stable and active Fe-based materials with wide pH adaptability remains greatly challenging. In this study, highly dispersed iron phosphide-decorated porous carbon (Fe2P(x)@P(z)NC-y) was prepared via the thermal hydrolysis of Fe@ZIF-8, followed by phosphorus doping (P-doping) and pyrolysis. The reduction performances of Fe2P(x)@P(z)NC-y for bromate reduction were evaluated. Characterization results showed that the Fe, P, and N elements were homogeneously distributed in the carbonaceous matrix. P-doping regulated the coordination environment of Fe atoms and enhanced the conductivity, porosity, and wettability of the carbonaceous matrix. As a result, Fe2P(x)@P(1.0)NC-950 exhibited enhanced reactivity and stability with an intrinsic reduction kinetic constant (kint) 1.53-1.85 times higher than Fe(x)@NC-950 without P-doping. Furthermore, Fe2P(0.125)@P(1.0)NC-950 displayed superior reduction efficiency and prominent stability with very low Fe leaching (4.53-22.98 µg L-1) in a wide pH range of 4.0-10.0. The used Fe2P(0.125)@P(1.0)NC-950 could be regenerated by phosphating, and the regenerated Fe2P(0.125)@P(1.0)NC-950 maintained 85% of its primary reduction activity after five reuse cycles. The study clearly demonstrates that Fe2P-decorated porous carbon can be applied as a robust and stable Fe-based material in aqueous bromate reduction.

LiTFSI-Free Hole Transport Materials for Robust Perovskite Solar Cells and Modules with High Efficiencies.

Lithium bis(trifluoromethane) sulfonamide (LiTFSI) and oxygen-doped organic semiconductors have been frequently used to achieve record power conversion efficiencies of perovskite solar cells (PSCs). However, this conventional doping process is time-consuming and leads to poor device stability due to the incorporation of Li ions. Herein, aiming to accelerate the doping process and remove the Li ions, we report an alternative p-doping process by mixing a new small-molecule organic semiconductor, N2,N2,N7,N7-tetrakis (4-methoxyphenyl)-9-(4-(octyloxy) phenyl)-9H carbazole-2,7-diamine (labeled OH44) and its preoxidized form OH44+(TFSI-). With this method, a champion efficiency of 21.8% has been achieved for small-area PSCs, which is superior to the state-of-the-art EH44 and comparable with LiTFSI and oxygen-doped spiro-OMeTAD. Moreover, the stability of OH44-based PSCs is improved compared with those of EH44, maintaining more than 85% of its initial efficiency after aging in an ambient condition without encapsulation for 1000 h. In addition, we achieved efficiencies of 14.7 and 12.6% for the solar modules measured with a metal mask of 12.0 and 48.0 cm2, respectively, which demonstrated the scalability of this method.

Low-cost BPO4 In Situ Synthetic Li3PO4 Coating and B/P-Doping to Boost 4.8 V Cyclability for Sulfide-Based All-Solid-State Lithium Batteries.

Structural damage of Ni-rich layered oxide cathodes such as LiNi0.8Co0.1Mn0.1O2 (NCM811) and serious interfacial side reactions and physical contact failures with sulfide electrolytes (SEs) are the main obstacles restricting ≥4.6 V high-voltage cyclability of all-solid-state lithium batteries (ASSLBs). To tackle this constraint, here, a modified NCM811 with Li3PO4 coating and B/P co-doping using inexpensive BPO4 as raw materials via the one-step in situ synthesis process is presented. Phosphates have good electrochemical stability and contain the same anion (O2-) and cation (P5+) as in cathode and SEs, respectively, thus Li3PO4 coating precludes interfacial anion exchange, lessening side reactivity. Based on the high bond energy of B─O and P─O, the lattice O and crystal texture of NCM811 can be stabilized by B3+/P5+ co-doping, thereby suppressing microcracks during high-voltage cycling. Therefore, when tested in combination with Li─In anode and Li6PS5Cl solid electrolytes (LPSCl), the modified NCM811 exhibits extraordinary performance, with 200.36 mAh g-1 initial discharge capacity (4.6 V), cycling 2300 cycles with decay rate as low as 0.01% per cycle (1C), and 208.26 mAh g-1 initial discharge capacity (4.8 V), cycling 1986 cycles with 0.02% per cycle decay rate. Simultaneously, it also has remarkable electrochemical abilities at both -20 °C and 60 °C.

Synchronous Surface-Interface and Crystal-Phase Engineered Multifaceted Hybrid Nanostructure of Fe-(1T)-VSe2 Nanosheet and Fe-CoSe2 Nanorods Doped with P for Rapid HER and OER, Kinetics.

Two different nanostructures of two dissimilar highly-potent active electrocatalysts, P-dopped metallic-(1T)-Fe-VSe2 (P,Fe-1T-VSe2 ) nanosheet and P-dopped Fe-CoSe2 (P,Fe-CoSe2 ) nanorods are hybridized and integrated into a single heterostructure (P,Fe-(VCo)Se2 ) on Ni-foam for high-performance water splitting (WS). The catalytic efficiency of VSe2 nanosheets is first enhanced by enriching metallic (1T)-phase, then forming bimetallic Fe-V selenide, and finally by P-doping. Similarly, the catalytic efficiency of CoSe2 nanorods is boosted by first fabricating Fe-Co bimetallic selenide and then P-doping. To develop super-efficient electrocatalysts for WS, two individual electrocatalysts P,Fe-1T-VSe2 nanosheet and P,Fe-CoSe2 are hybridized and integrated to form a heterostructure (P,Fe-(VCo)Se2 ). Metallic (1T)-phase of transition metal dichalcogenides has much higher conductivity than the 2H-phase, while bimetallization and P-doping activate basal planes, develop various active components, and form heterostructures that develop a synergistic interfacial effect, all of which, significantly boost the catalytic efficacy of the P,Fe-(VCo)Se2 . P,Fe-(VCo)Se2 shows excellent performance requiring very low overpotential (ηHER = 50 mV@10 mAcm-2 and ηOER = 230 mV@20 mAcm-2 ). P,Fe-(VCo)Se2 (+, -) device requires a cell potential of 1.48 V to reach 10 mA cm-2 for overall WS.

Pauling-Type Adsorption of O2 Induced by Heteroatom Doped ZnIn2 S4 for Boosted Solar-Driven H2 O2 Production.

Breaking the trade-off between activity and selectivity has perennially been a formidable endeavor in the field of hydrogen peroxide (H2 O2 ) photosynthesis, especially the side-on configuration of oxygen (O2 ) on the catalyst surface will cause the cleavage of O-O bonds, which drastically hinders the H2 O2 production performance. Herein, we present an atomically heteroatom P doped ZnIn2 S4 catalyst with tunable oxygen adsorption configuration to accelerate the ORR kinetics essential for solar-driven H2 O2 production. Indeed, the spectroscopy characterizations (such as EXAFS and in situ FTIR) and DFT calculations reveal that heteroatom P doped ZnIn2 S4 at substitutional and interstitial sites, which not only optimizes the coordination environment of Zn active sites, but also facilitates electron transfer to the Zn sites and improves charge density, avoiding the breakage of O-O bonds and reducing the energy barriers to H2 O2 production. As a result, the oxygen adsorption configuration is regulated from side-on (Yeager-type) to end-on (Pauling-type), resulting in the accelerated ORR kinetics from 874.94 to 2107.66 µmol g-1 h-1 . This finding offers a new avenue toward strategic tailoring oxygen adsorption configuration by the rational design of doped photocatalyst.

High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping.

Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·µm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.

On the electronic and spin-valley coupling of vanadium doped MoS2(1-x)Se2xmonolayers.

Monolayers of MoS2with tunable bandgap and valley positions are highly demanding for their applications in opto-spintronics. Herein, selenium (Se) and vanadium (V) co-doped MoS2monolayers (vanadium doped MoS2(1-x)Se2x(V-MoSSe)) are developed and showed their variations in the electronic and optical properties with dopant content. Vanadium gets substitutionally (in place of Mo) doped within the MoS2lattice while selenium doped in place of sulfur, as shown by a detailed microstructure and spectroscopy analyses. The bandgap tunability with selenium doping can be achieved while valley shift is occurred due to the doping of vanadium. Chemical vapor deposition assisted grown MoS2(also selenium doped MoS2as shown here) is known for its n-type transport behavior while vanadium doping is found to be changing its nature to p-doping. Chirality dependent photoexcitation studies indicate a room temperature valley splitting in V-MoSSe (∼8 meV), where such a valley splitting is verified using density functional theory based calculations.

Phosphorus Doping Strategy-Induced Synergistic Modification of Interlayer Structure and Chemical State in Ti3C2Tx toward Enhancing Capacitance.

Heteroatom doping is considered an effective method to substantially improve the electrochemical performance of Ti3C2Tx MXene for supercapacitors. Herein, a facile and controllable strategy, which combines heat treatment with phosphorous (P) doping by using sodium phosphinate (NaH2PO2) as a phosphorus source, is used to modify Ti3C2Tx. The intercalated ions from NaH2PO2 act as "pillars" to expand the interlayer space of MXene, which is conducive to electrolyte ion diffusion. On the other hand, P doping tailors the surface electronic state of MXene, optimizing electronic conductivity and reducing the free energy of H+ diffusion on the MXene surface. Meanwhile, P sites with lower electronegativity owning good electron donor characteristics are easy to share electrons with H+, which is beneficial to charge storage. Moreover, the adopted heat treatment replaces -F terminations with O-containing groups, which enhances the hydrophilicity and provides sufficient active sites. The change in surface functional groups increases the content of high valence-stated Ti with a high electrochemical activity that can accommodate more electrons during discharge. Synergistic modification of interlayer structure and chemical state improves the possibility of Ti3C2Tx for accommodating more H+ ions. Consequently, the modified electrode delivers a specific capacitance of 510 F g-1 at 2 mV s-1, and a capacitance retention of 90.2% at 20 A g-1 after 10,000 cycles. The work provides a coordinated strategy for the rational design of high-capacitance Ti3C2Tx MXene electrodes.

Boosting the Hydrogen Evolution Reaction Performance of P-Doped PtTe2 Nanocages via Spontaneous Defects Formation.

PtTe2 , a member of the noble metal dichalcogenides (NMDs), has aroused great interest in exploring its behavior in the hydrogen evolution reaction (HER) due to the unique type-II topological semimetallic nature. In this work, a simple template-free hydrothermal method to obtain the phosphorus-doped (P-doped) PtTe2 nanocages with abundant amorphous and crystalline interface (A/C-P-PtTe2 ) is developed. Revealed by density functional theory calculations, the atomic Te vacancies can spontaneously form on the basal planes of PtTe2 by the P doping, which results in the unsaturated Pt atoms exposed as the active sites in the amorphous layer for HER. Owing to the defective structure, the A/C-P-PtTe2 catalysts have the fast Tafel step determined kinetics in HER, which contributes to an ultralow overpotential (η = 28 mV at 10 mA cm-2 ) and a small Tafel slope of 37 mV dec-1 . More importantly, benefiting from the inner stable crystalline P-PtTe2 nanosheets, limited decay of the performance is observed after chronopotentiometry test. This work reveals the important role of the inherent relationship between structure and activity in PtTe2 for HER, which may bring another enlightenment for the design of efficient catalysts based on NMDs in the near future.

Synergistic Effect of P Doping and Mo-Ni-Based Heterostructure Electrocatalyst for Overall Water Splitting.

Heterostructure construction and heteroatom doping are powerful strategies for enhancing the electrolytic efficiency of electrocatalysts for overall water splitting. Herein, we present a P-doped MoS2/Ni3S2 electrocatalyst on nickel foam (NF) prepared using a one-step hydrothermal method. The optimized P[0.9mM]-MoS2/Ni3S2@NF exhibits a cluster nanoflower-like morphology, which promotes the synergistic electrocatalytic effect of the heterostructures with abundant active centers, resulting in high catalytic activity for the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in alkaline electrolyte. The electrode exhibits low overpotentials and Tafel slopes for the HER and OER. In addition, the catalyst electrode used in a two-electrode system for overall water splitting requires an ultralow voltage of 1.42 V at 10 mA·cm-2 and shows no obvious increase in current within 35 h, indicating excellent stability. Therefore, the combination of P doping and the heterostructure suggests a novel path to formulate high-performance electrocatalysts for overall water splitting.

Phosphorus-Doped directly interconnected networks of amorphous Metal-Organic framework nanowires for efficient methanol oxidation.

Developing high-performance and low-cost electrocatalysts toward methanol oxidation reaction (MOR) is essential for fuel cell applications. Herein, we report a defect engineering strategy integrating amorphization and phosphorization to construct directly interconnected networks of amorphous NiCo-based metal-organic framework nanowires (a-NiCo-MOFNWs) with phosphorus (P) doping. The resulting P-doped a-NiCo-MOFNWs (a-NiCo-MOFNWs-P) network displays superior MOR efficiency and long-term durability over 1000 cyclic voltammetry (CV) measurements. The special structure of directly interconnected networks and the synergistic effect between the amorphous MOFs and dispersed phosphorus species give rise to abundant exposed active sites, accelerated electron transport, and increased porosity for mass transfer, thus boosting the reaction kinetics of MOR. This work provides additional insights into the network assembly and structural evolution of one-dimensional (1D) MOFs, and also opens up new avenues for the design of highly reactive and robust non-precious metal-based electrocatalysts.

P-Doping a Porous Carbon Host Promotes the Lithium Storage Performance of Red Phosphorus.

Red phosphorus (RP) is a promising anode material for use in lithium-ion batteries (LIBs) due to its high theoretical specific capacity (2596 mA h g-1). However, the practical use of RP-based anodes has been challenged by the material's low intrinsic electrical conductivity and poor structural stability during lithiation. Here, we describe a phosphorus-doped porous carbon (P-PC) and disclose how the dopant improves the Li storage performance of RP that was incorporated into the P-PC (designated as RP@P-PC). P-doping porous carbon was achieved using an in situ method wherein the heteroatom was added as the porous carbon was being formed. The phosphorus dopant effectively improves the interfacial properties of the carbon matrix as subsequent RP infusion results in high loadings, small particle sizes, and uniform distribution. In half-cells, an RP@P-PC composite was found to exhibit outstanding performance in terms of the ability to store and utilize Li. The device delivered a high specific capacitance and rate capability (1848 and 1111 mA h g-1 at 0.1 and 10.0 A g-1, respectively) as well as excellent cycling stability (1022 mA h g-1 after 800 cycles at 2.0 A g-1). Exceptional performance metrics were also measured when the RP@P-PC was used as an anode material in full cells that contained lithium iron phosphate as the cathode material. The methodology described can be extended to the preparation of other P-doped carbon materials that are employed in contemporary energy storage applications.

Synergistic Effect of Surface p-Doping and Passivation Improves the Efficiency, Stability, and Reduces Lead Leakage in All-Inorganic CsPbIBr2 -Based Perovskite Solar Cells.

Wide-bandgap inorganic cesium lead halide CsPbIBr2 is a popular optoelectronic material that researchers are interested in because of the character that balances the power conversion efficiency and stability of solar cells. It also has great potential in semitransparent solar cells, indoor photovoltaics, and as a subcell for tandem solar cells. Although CsPbIBr2 -based devices have achieved good performance, the open-circuit voltage (Voc ) of CsPbIBr2 -based perovskite solar cells (PSCs) is still lower, and it is critical to further reduce large energy losses (Eloss ). Herein, a strategy is proposed for achieving surface p-type doping for CsPbIBr2 -based perovskite for the first time, using 1,5-Diaminopentane dihydroiodide at the perovskite surface to improve hole extraction efficiency. Meanwhile, the adjusted energy levels reduce Eloss and improve Voc of the CsPbIBr2 PSCs. Furthermore, the Cs- and Br-vacancies at the interface are filled, reducing structural disorder and defect states and thus improving the quality of the perovskite film. As a result, the target device achieves a high efficiency of 11.02% with a Voc of 1.33 V, which is among the best values. In addition to the improved performance, the stability of the target device under various conditions is enhanced, and the lead leakage is effectively suppressed.

Orbital Modulation with P Doping Improves Acid and Alkaline Hydrogen Evolution Reaction of MoS2.

There has been great interest in developing and designing economical, stable and highly active electrocatalysts for the hydrogen evolution reaction (HER) via water splitting in an aqueous solution at different pH values. Transition-metal dichalcogenides (TMDCs), e.g., MoS2, are identified to be promising catalysts for the HER due to the limited active sites at their edges, while the large basal plane of MoS2 is inert and shows poor performance in electrocatalytic hydrogen production. We theoretically propose orbital modulation to improve the HER performance of the basal plane of MoS2 through non-metal P doping. The substitutional doping of P provides empty 3pz orbitals, perpendicular to the basal plane, can enhance the hydrogen adsorption for acid HER and can promote water dissociation for alkaline HER, which creates significant active sites and enhances the electronic conductivity as well. In addition, 3P-doped MoS2 exhibits excellent HER catalytic activity with ideal free energy at acid media and low reaction-barrier energy in alkaline media. Thus, the doping of P could significantly boost the HER activity of MoS2 in such conditions. Our study suggests an effective strategy to tune HER catalytic activity of MoS2 through orbital engineering, which should also be feasible for other TMDC-based electrocatalysts.

Origins of p-Doping and Nonradiative Recombination in CsSnI3.

It is commonly believed that the spontaneous p-doping in Sn-based perovskites is caused by Sn vacancies. By performing rigorous first-principles calculations for a prototypical Sn-based perovskite CsSnI3 , we reveal that, in fact, the defects dominating p-doping are Cs vacancies. The reason that adding extra Sn2+ could reduce p-doping is that Cs and Sn present the same changing trend in terms of chemical potentials, and thus inhibiting the formation of Sn vacancies will also limit the formation of Cs vacancies. Moreover, we show that I vacancies are the dominant nonradiative recombination centers, and can result in sizable nonradiative losses, which explains why the experimentally measured carrier lifetime is only a few nanoseconds even if p-doping is suppressed. This work provides new insights into the origins of p-doping and nonradiative recombination in CsSnI3 , and suggests that minimizing the formation of Cs and I vacancies is critical to realizing the best device performance.

Long-lasting photocatalytic activity of trace phosphorus-doped g-C3N4/SMSO and its application in antibacterial ceramics.

Conventional photocatalysts generate numerous active species-primarily hydroxyl radicals (•OH)-under solar light excitation to exert photocatalytic activity for especially antibacterial effects. However, the light dependence limits their competitiveness against other antimicrobial materials since they do not work at night. Herein, a P-g-C3N4/Sr2MgSi2O7:Eu2+,Dy3+ (P-g-C3N4/SMSO) composite day-night photocatalyst is synthesized, using a model methyl orange (MO) substrate, and the impacts of trace P doping and the SMSO composite on the activity of the photocatalyst in MO degradation is investigated; Its antibacterial effect against Escherichia coli and Staphylococcus aureus on ceramic surfaces is further examined. The morphology, structure, and composition of the photocatalyst are characterized by SEM, TEM, XRD, FT-IR, and UV-vis DRS. Finally, the photocatalytic mechanism is elucidated through active species capture experiments and ESR testing. P doping and the SMSO heterojunction structure reduce the width of the forbidden band of g-C3N4 and broaden its visible-light-response range. Moreover, SMSO acts as a light source to realize long-lasting photocatalytic performance of the composite, even in the dark. The photocatalytic process produces •O2-, 1O2, and h+ active species, with •O2- and 1O2 playing the dominant role-instead of •OH as previously thought.

Metal organic framework derived P-doping CoS@C with sulfide defect to boost high-performance asymmetric supercapacitors.

Cobalt sulfide (CoS) is a promising battery-type material for electrochemical energy storage. However, the poor conductivity and slow charge transfer kinetics as well as the deficiency of electrochemically active sites seriously limit their applications. Herein, a class of the P-doping induced hexagonal CoS nanosheets with S defects (P-CoS1-x) derived from Co-based metal organic frameworks (MOFs) supported on carbon nanotube film (CNT) is designed and prepared. The density functional theory (DFT) simulations show the higher conductivity of the P-CoS1-x electrode than CoS. Taking advantage of the synergistic effects of the high conductive P-CoS nanosheets with rich S defects and the flexible CNT, the P-CoS1-x/CNT electrode exhibits a high reversible capacity of 4.3F cm-2, remarkable rate capability, and outstanding long-term cyclability. Impressively, the flexible asymmetric supercapacitor (ASC) based on P-CoS1-x//CoS@PPy achieves a satisfying energy density of 0.18 mWh cm-2 and high bending stability. The electrocatalytic result suggests that the P-CoS1-x possesses the lowest overpotential and the smallest Tafel slope. This vacancy engineering strategy also provides a new insight into active materials and should be beneficial for the design of the next generation of energy storage devices.

Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters.

In this manuscript, we have shown the growth and extensive structural and optical characteristic of the uniformly Mg-doped Al0.23Ga0.77N (UV-A region,λ∼ 323 nm) nanowire. The Kelvin probe force microscopy was employed to determine the profile of holes in p-type AlGaN nanowires by measuring the work function changes induced by Mg incorporation. The influence of surface band bending on doping concentration has thoroughly been discussed. Our experiment confirms the homogeneous incorporation of Mg throughout the nanowire without any top surface Mg segregation. In this work, we have also demonstrated a comprehensive analysis of acceptor states induced thermal quenching behaviour in the optical transition of Mg-doped AlGaN nanowire. We propose a phenomenological model, based on the rate equation which confirms that achieving higher 'hole' (p-doping) concentration in AlGaN nanowire (>1018cm-3) is more conducive than the planar counterpart if the growth of NWs is carried out at optimized process conditions. This rate equation-based model has also demonstrated the influence of sidewall surface passivation in those AlGaN nanowires.