Unraveling the Role of the Stoichiometry of Atomic Layer Deposited Nickel Cobalt Oxides on the Oxygen Evolution Reaction.

Nickel cobalt oxides (NCOs) are promising, non-precious oxygen evolution reaction (OER) electrocatalysts. However, the stoichiometry-dependent electrochemical behavior makes it crucial to understand the structure-OER relationship. In this work, NCO thin film model systems are prepared using atomic layer deposition. In-depth film characterization shows the phase transition from Ni-rich rock-salt films to Co-rich spinel films. Electrochemical analysis in 1 m KOH reveals a synergistic effect between Co and Ni with optimal performance for the 30 at.% Co film after 500 CV cycles. Electrochemical activation correlates with film composition, specifically increasing activation is observed for more Ni-rich films as its bulk transitions to the active (oxy)hydroxide phase. In parallel to this transition, the electrochemical surface area (ECSA) increases up to a factor 8. Using an original approach, the changes in ECSA are decoupled from intrinsic OER activity, leading to the conclusion that 70 at.% Co spinel phase NCO films are intrinsically the most active. The studies point to a chemical composition dependent OER mechanism: Co-rich spinel films show instantly high activities, while the more sustainable Ni-rich rock-salt films require extended activation to increase the ECSA and OER performance. The results highlight the added value of working with model systems to disclose structure-performance mechanisms.

Nanostructured ZnO thin film to enhance gutta-percha's adhesion to endodontic sealers.

BACKGROUND: Gutta-percha (GP) combined with an endodontic sealer is still the core material most widely used for tridimensional obturation. The sealer acts as a bonding agent between the GP and the root dentinal walls. However, one of the main drawbacks of GP core material is the lack of adhesiveness to the sealer. ZnO thin films have many remarkable features due to their considerable bond strength, good optical quality, and excellent piezoelectric, antibacterial, and antifungal properties, offering many potential applications in various fields. This study aimed to explore the influence of GP surface's functionalization with a nanostructured ZnO thin film on its adhesiveness to endodontic sealers. METHODS: Conventional GP samples were divided randomly into three groups: (a) Untreated GP (control); (b) GP treated with argon plasma (PT); (c) Functionalized GP (PT followed by ZnO thin film deposition). GP's surface functionalization encompassed a multi-step process. First, a low-pressure argon PT was applied to modify the GP surface, followed by a ZnO thin film deposition via magnetron sputtering. The surface morphology was assessed using SEM and water contact angle analysis. Further comprehensive testing included tensile bond strength assessment evaluating Endoresin and AH Plus Bioceramic sealers' adhesion to GP. ANOVA procedures were used for data statistical analysis. RESULTS: The ZnO thin film reproduced the underlying surface topography produced by PT. ZnO thin film deposition decreased the water contact angle compared to the control (p < 0.001). Endoresin showed a statistically higher mean bond strength value than AH Plus Bioceramic (p < 0.001). There was a statistically significant difference between the control and the ZnO-functionalized GP (p = 0.006), with the latter presenting the highest mean bond strength value. CONCLUSIONS: The deposition of a nanostructured ZnO thin film on GP surface induced a shift towards hydrophilicity and an increased GP's adhesion to Endoresin and AH Bioceramic sealers.

Atomic Layer Growth of Rutile TiO2 Films with Ultrahigh Dielectric Constants via Crystal Orientation Engineering.

In general, the electronic and optical properties of oxide films can significantly benefit from highly textured crystallinity. However, oxide films grown by atomic layer deposition (ALD), a powerful technique for the synthesis of high-quality, nanoscale thin films, usually exhibit amorphous or randomly oriented polycrystalline phases. Here, we demonstrate the growth of highly textured rutile phase ALD TiO2 films through rational substrate design. Both a- and c-axis preferentially oriented TiO2 films are obtained by varying the lattice parameters of the initial ALD growth surface. Under optimized conditions, we find that it is possible to deposit high-quality, c-axis preferentially aligned TiO2 films with a bulk dielectric constant approaching 185, rivaling the single crystal limit. These films display a remarkably high dielectric constant of 117 despite thin thickness of 5.2 nm. Moreover, the addition of a single doping sequence of Al2O3 successfully suppresses leakage currents to levels compatible with modern dynamic random access memory cells, all the while maintaining the high bulk dielectric constant of 137. These results clearly highlight the prospect of utilizing crystal orientation engineering in ALD thin films for emerging semiconductor devices.

Wavelength-Dependent Multistate Programmability and Optoelectronic Logic-in-Memory Operation from the Narrow Bandgap pNDI-SVS Floating Gate.

This study introduces wavelength-dependent multistate programmable optoelectronic logic-in-memory (OLIM) operation using a broadband photoresponsive pNDI-SVS floating gate. The distinct optical absorption of the relatively large bandgap DNTT channel (2.6 eV) and the narrow bandgap pNDI-SVS floating gate (1.37 eV) lead to varying light-induced charge carrier accumulation across different wavelengths. In the proposed OLIM device comprising the p-type pNDI-SVS-based optoelectronic memory (POEM) transistor and an IGZO n-type transistor, we achieve controllable output voltage signals by modulating the pull-up performance through optical wavelength and applied bias manipulation. Real-time OLIM operation yields four discernible output values. The device's high mechanical flexibility and seamless surface integration among the paper substrate, pNDI-SVS, parylene gate dielectric, and DNTT region render it compatible for integration into paper-based optoelectronics. Our flexible POEM device on name card substrates demonstrates stable operational performance, with minimal variation (8%) after 100 cycles of repeated memory operation, remaining reliable across various angle measurements.

Polymorphic Localized Heterostructure Design for High-Performance Amorphous/Nanocrystalline Composite Film.

Analogous to linear dielectric, amorphous perovskite dielectrics characterized of high breakdown strength and low remanent polarization possess in-depth application in the sea, land, and air fields. Amorphous engineering is a common approach to balance the inverse relationship between polarization and breakdown strength in dielectric ceramic capacitor, however, the low polarization is the major barrier limiting the improvement of energy storage density. To address this concern, the polymorphic localized heterostructure confirmed by high-resolution transmission electron microscope (HR-TEM) and HADDF images is constructed in BaTiO3-Bi(Ni0.5Zr0.5)O3 amorphous/nanocrystalline composite film with SiO2 addition (BT-BNZ-xS, x = 3, 5, 7, 10 mol%). The stability of nanocrystalline region achieved by Si-rich transition region and the enhancive ultra-short-range ordering in the amorphous region synergistically result in large breakdown strength and nonhysteretic polarized response. This polymorphic localized heterostructure optimizes the thermal stability in a wide temperature range and contributes ultrahigh energy storage density of 149.9 J cm-3 with markedly enhanced efficiency of 79.0%. This study provides a universal strategy to design the polarization behavior in other amorphous perovskite-based dielectrics.

Sequential thin film microextraction and overcoated thin film microextraction devices for characterization of sparkling wine aroma profiles and partitioning equilibria.

Solid Phase Microextraction (SPME) is a commonly used, robust method for characterization of aroma profiles in food matrices. However, challenges such as saturation, swelling, and competition can occur when sampling such complex matrices, resulting in decreased accuracy in the quantitation of polar compounds. In this study, sequential thin film micro-extraction (TFME) was employed to study the aroma profile of sparkling wine, with a focus to evaluate the displacement of polar analytes at extraction times longer than their corresponding equilibrium time. This investigation also describes advancements in the production of TFME devices, specifically the overcoating of hydrophilic-lipophilic balance/polydimethylsiloxane (HLB/PDMS) thin films to increase their matrix compatibility. Sequential thin film micro-extraction and overcoated HLB/PDMS thin films were evaluated for characterization of sparkling wine samples. The results were encouraging, showing that these advancements can decrease competition phenomena and increase the calibration linearity range compared to traditional micro-extraction approaches more commonly used for the characterization of such samples. In addition, multiphase equilibria investigation involving micellar systems enabled by the microextraction technology provides better understanding between wine aroma and its composition.

Solid-phase transient soldering method based on Au/Ni-W multilayer thin-film-modified copper-based structures.

The copper crystal cone-shaped micro-nanostructure is used as the substrate, and the Ni-W alloy layer and Au nanolayer are plated sequentially. Instantaneous soldering with lead-free solder is realized under ultrasonic assistance at room temperature. This solves the residual stress and thermal damage caused by high melting point lead-free solder on thin chips and thermal components, and ensures the safety and reliability of electronic components. Copper-based microstructures are deposited by electrochemical methods. An amorphous Ni-W alloy layer with a thickness of 180 nm is deposited on the Cu-based microstructures by adjusting the atomic ratio of the plating solution. The Ni-W layer is further coated with a 50 nm Au layer to prevent oxidation. Solid-phase transient soldering is realized by combining the Au/Ni-W multilayer thin-film-modified Cu substructures with commercial solder (SAC305) for a holding time of 3 s at a soldering pressure of 10,000 gf (20 MPa) while ultrasonically assisted. The soldered samples are aged at 180 °C for 10 min, 30 min, and 60 min, respectively. Copper substructures with different surface modifications are subjected to destructive shear experiments with solder balls. Scanning electron microscope and X-ray fluorescence thickness gauge are used to study the microstructure, intermetallic compound (IMC) composition thickness and properties of the soldered interface and section. The cone height of the Cu-based structure is 2-4 µm, and the diameter of the bottom is 800 nm-1200 nm, which has a sharp tip and an excellent L/D ratio. The interface between the Au/Ni-W modified Cu substructure and the solder ball is almost free of holes. The average shear strength at the soldering interface is about 43.06 MPa. The fracture surface after the shear experiment basically occurs inside the solder ball matrix, which belongs to the pure toughness fracture. The interface between the Au/Ni-W-modified Cu-based structure and the solder ball is subjected to long aging treatment at 180 °C. The soldering interface showed a "bright layer". New phases are generated on the solder side above the "bright layer", while no new phases appear on the Cu substructure side below the "bright layer". The copper-based microstructure is inserted into the inside of the solder ball to form an inlay and produce mechanical interlocking. Au/Ni-W alloy modification layer can effectively improve the surface hardness of copper-based structures. This creates a large hardness difference with soft solder and enables the formation of fewer holes in the insertion solder. Amorphous Ni-W alloys are prone to form dense oxide films during ultrasonication. The Au film modification prevents oxide generation and increases the average shear strength of the soldering interface. The Ni-W alloy layer retards the interdiffusion between Cu-Sn, blocks the excessive growth of Cu-Sn IMCs, and reduces the reliability problems caused by interface failure.

Improved Reversibility of Thin-Film Solid Oxide Cells at 500 °C by Tailoring Sputtering Processes for Depositing Yttria-Stabilized Zirconia Electrolyte.

The present study investigates the impact of sputtering configurations on the microstructure and crystallinity of thin-film yttria-stabilized zirconia electrolytes for anodized aluminum oxide-supported all-sputtered thin-film reversible solid oxide cells. Employing various sputtering parameters, such as target-substrate distance and substrate rotation speed, the present study reveals distinct surface characteristics and crystalline structures of thin-film yttria-stabilized zirconia. The microstructure analysis includes scanning electron microscopy and atomic force microscopy examinations, uncovering the influence of the process parameters on the surface morphology, roughness, and grain size. X-ray diffraction data illustrate the texture preferences and crystallite characteristics. The electrochemical characterization of the reversible solid oxide cells demonstrates that the optimized sputtering configuration significantly outperforms the others in both SOFC and SOEC modes, showing exceptional current densities of 964 mA/cm2 at 1.3 V in electrolysis mode at 500 °C. Electrochemical impedance spectroscopy further reveals improved charge transfer reactions at the interface of the electrolyte. The enhanced electrochemical performance is attributed to the unique microstructure and crystallinity of the thin film of yttria-stabilized zirconia. The record-breaking electrolysis performance of this work at 500 °C underscores the potential of tailored sputtering parameters in optimizing the reversible solid oxide cell performance.

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology.

Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current-voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.

All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process.

Solution-based processes have received considerable attention in the fabrication of electronics and sensors owing to their merits of being low-cost, vacuum-free, and simple in equipment. However, the current solution-based processes either lack patterning capability or have low resolution (tens of micrometers) and low pattern fidelity in terms of line edge roughness (LER, several micrometers). Here, we present a surface energy-directed assembly (SEDA) process to fabricate metal oxide patterns with up to 2 orders of magnitude improvement in resolution (800 nm) and LER (16 nm). Experiment results show that high pattern fidelity can be achieved only at low relative humidities of below 30%. The reason for this phenomenon lies in negligible water condensation on the solution droplet. Employing the SEDA process, all-solution-processed metal oxide thin film transistors (TFTs) are fabricated by using indium oxide as channel layers, indium tin oxide as source/drain electrodes and gate electrodes, and aluminum oxide as gate dielectrics. TFT-based logic gate circuits, including NOT, NOR, NAND, and AND are fabricated as well, demonstrating the applicability of the SEDA process in fabricating large area functional electronics.

Transfer of High-Temperature-Sputtered BiFeO3 Thin Films onto Flexible Substrates Using α-MoO3 Layers.

Inducing external strains on highly oriented thin films transferred onto mechanically deformable substrates enables a drastic enhancement of their ferroelectric, magnetic, and electronic performances, which cannot be achieved in films on rigid single crystals. Herein, the growth and diffusion behaviors of BiFeO3 thin films grown at various temperatures is reported on α-MoO3 layers of different thicknesses using sputtering. When the BiFeO3 thin films are deposited at a high temperature, significant diffusion of Fe into α-MoO3 occurs, producing the Fe1.89Mo4.11O7 phase and suppressing the maintenance of the 2D structure of the α-MoO3 layers. Although lowering the deposition temperature alleviates the diffusion yielding the survival of the α-MoO3 layer, enabling exfoliation, the BiFeO3 is amorphous and the formation of the Fe1.89Mo4.11O7 phase cannot be suppressed at the crystallization temperature. High-temperature-grown BiFeO3 thin films are successfully transferred onto flexible substrates via mechanical exfoliation by introducing a blocking layer of Au and measured the ferroelectric properties of the transferred films.

Sexual hormones monitoring in surface waters and wastewaters from Northern Italy by thin film microextraction coupled with HPLC-MS/MS.

The occurrence of sex steroid hormones, viz. oestrogens and progestins, in aquatic ecosystems is of global concern due to their role as endocrine disrupting chemicals, even at low concentration (µg L-1 or less). Thus, it is essential to monitor these organic pollutants to get a realistic picture of their presence and to control their contamination levels in environmental water bodies. In this respect, we have explored the use of self-prepared polymeric films as novel sorptive phase for the microextraction of 17ß-estradiol, 17α-ethinylestradiol, estrone, progesterone, medroxyprogesterone acetate and hydroxyprogesterone. The thin film microextraction procedure has been developed, evaluating different film compositions, sample volumes and elution conditions to recover the sorbed analytes. The overall method provides good reproducibility (RSD < 12%) and recoveries higher than 60%. The final method has been applied to environmental monitoring in surface waters (river and lake samples) and urban wastewater treatment plant effluents and influents from Northern Italy, to get a contamination snapshot of this highly urbanized area.

Oxidation Control to Augment Interfacial Charge Transport in Te-P3HT Hybrid Materials for High Thermoelectric Performance.

Organic-inorganic hybrid thermoelectric (TE) materials have attracted tremendous interest for harvesting waste heat energy. Due to their mechanical flexibility, inorganic-organic hybrid TE materials are considered to be promising candidates for flexible energy harvesting devices. In this work, enhanced TE properties of Tellurium (Te) nanowires (NWs)- poly (3-hexylthiophene-2, 5-diyl) (P3HT) hybrid materials are reported by improving the charge transport at interfacial layer mediated via controlled oxidation. A power factor of ≈9.8 µW (mK2)-1 is obtained at room temperature for oxidized P3HT-TeNWs hybrid materials, which increases to ≈64.8 µW (mK2)-1 upon control of TeNWs oxidation. This value is sevenfold higher compared to P3HT-TeNWs-based hybrid materials reported in the literature. MD simulation reveals that oxidation-free TeNWs demonstrate better templating for P3HT polymer compared to oxidized TeNWs. The Kang-Snyder model is used to study the charge transport in these hybrid materials. A large σE0 value is obtained which is related to better templating of P3HT on oxygen-free TeNWs. This work provides evidence that oxidation control of TeNWs is critical for better interface-driven charge transport, which enhances the thermoelectric properties of TeNWs-P3HT hybrid materials. This work provides a new avenue to improve the thermoelectric properties of a new class of hybrid thermoelectric materials.

Study on the UV FEL single-shot damage threshold of an Au thin film.

The damage threshold of an Au-coated flat mirror, one of the reflective optics installed on the FEL-2 beamline of the Dalian Coherent Light Source, China, upon far-UV free-electron laser irradiation is evaluated. The surface of the coating is characterized by profilometer and optical microscope. A theoretical approach of the phenomenon is also presented, by application of conventional single-pulse damage threshold calculations, a one-dimensional thermal diffusion model, as well as finite-element analysis with ANSYS.

Effective Non-Radiative Interfacial Recombination Suppression Scenario Using Air Annealing for Antimony Triselenide Thin-Film Solar Cells.

Antimony triselenide (Sb2Se3) has become a very promising candidate for next-generation thin-film solar cells due to the merits of their low-cost, low-toxic and excellent optoelectronic properties. Despite Sb2Se3 thin-film photovoltaic technology having undergone rapid development over the past few years, insufficient doping concentration and severe recombination have been the most challenging limitations hindering further breakthroughs for the Sb2Se3 solar cells. Post-annealing treatment of the Sb2Se3/CdS heterojunction was demonstrated to be very helpful in improving the device performance previously. In this work, post-annealing treatments were applied to the Sb2Se3/CdS heterojunction under a vacuum and in the air, respectively. It was found that compared to the vacuum annealing scenario, the air-annealed device presented notable enhancements in open-circuit voltage. Ultimately a competitive power conversion efficiency of 7.62% was achieved for the champion device via air annealing. Key photovoltaic parameters of the Sb2Se3 solar cells were measured and the effects of post-annealing treatments using different scenarios on the devices were discussed.

Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering.

Sn-doped Ga2O3 thin films and metal-semiconductor-metal (MSM) ultraviolet detectors were prepared using the co-sputtering method to enhance their photoelectric performance. The results revealed that Sn doping can effectively change the optical and electrical properties of thin films, greatly improving the photoelectric responsiveness of the devices. Through microstructure testing results, all of the thin film structures were determined to be monoclinic beta phase gallium oxide. At a DC power of 30 W, the thickness of the Sn-doped thin film was 430 nm, the surface roughness of the thin film was 4.94 nm, and the carrier concentration, resistivity, and mobility reached 9.72 × 1018 cm-3, 1.60 × 10-4 Ω·cm, and 45.05 cm3/Vs, respectively. The optical results show that Sn doping clearly decreases the transmission of thin films and that the bandgap can decrease to 3.91 eV. Under 30 W DC power, the photo dark current ratio of the detector can reach 101, time responses of tr = 31 s and tf = 22.83 s were obtained, and the spectral responsivity reached 19.25 A/W.

Scalable Fabrication of Quasi-One-Dimensional van der Waals Ta2Pt3Se8 Nanowire Thin Films via Solution Processing for NO2 Gas Sensing over Large Areas.

Solution-based processing of van der Waals (vdW) one- (1D) and two-dimensional (2D) materials is an effective strategy to obtain high-quality molecular chains or atomic sheets in a large area with scalability. In this work, quasi-1D vdW Ta2Pt3Se8 was exfoliated via liquid phase exfoliation (LPE) to produce a stably dispersed Ta2Pt3Se8 nanowire solution. In order to screen the optimal exfoliation solvent, nine different solvents were employed with different total surface tensions and polar/dispersive (P/D) component (P/D) ratios. The LPE behavior of Ta2Pt3Se8 was elucidated by matching the P/D ratios between Ta2Pt3Se8 and the applied solvent, resulting in N-methyl-2-pyrrolidone (NMP) as an optimal solvent owing to the well-matched total surface tension and P/D ratio. Subsequently, Ta2Pt3Se8 nanowire thin films are manufactured via vacuum filtration using a Ta2Pt3Se8/NMP dispersion. Then, gas sensing devices are fabricated onto the Ta2Pt3Se8 nanowire thin films, and gas sensing property toward NO2 is evaluated at various thin-film thicknesses. A 50 nm thick Ta2Pt3Se8 thin-film device exhibited a percent response of 25.9% at room temperature and 32.4% at 100 °C, respectively. In addition, the device showed complete recovery within 14.1 min at room temperature and 3.5 min at 100 °C, respectively.

Experimental, theoretical and numerical simulation-based investigations on the fabricated Cu2ZnSn thin-film-based Schottky diodes with enhanced electron transport for solar cell.

Copper-zinc-tin Cu2ZnSn (CZT) thin films are promising materials for solar cell applications. This thin film was deposited on a fluorine-doped tin oxide (FTO) using an electrochemical deposition hierarchy. X-ray diffraction of thin-film studies confirms the variation in the structural orientation of CZT on the FTO surface. As the pH of the solution is increased, the nature of the CZT thin-film aggregate changes from a fern-like leaf CZT dendrite crystal to a disk pattern. The FE-SEM surface micrograph shows the dendrite fern leaf and sharp edge disks. The 2-D diffusion limitation aggregation under slippery conditions for ternary thin films was performed for the first time. The simulation showed that by changing the diffusing species, the sticking probability was responsible for the pH-dependent morphological change. Convincingly, diffusion-limited aggregation (DLA) simulations confirm that the initial structure of copper is responsible for the final structure of the CZT thin films. An experimental simulation with pH as a controlled parameter revealed phase transition in CZT thin films. The top and back contact of Ag-CZT thin films based on Schottky behavior give a better electronic mechanism in superstrate and substrate solar cells.

An Innovative Surface Modification Technique for Antifouling Polyamide Nanofiltration Membranes.

In this study, we developed a novel surface coating technique to modify the surface chemistry of thin film composite (TFC) nanofiltration (NF) membranes, aiming to mitigate organic fouling while maintaining the membrane's permselectivity. We formed a spot-like polyester (PE) coating on top of a polyamide (PA) TFC membrane using mist-based interfacial polymerization. This process involved exposing the membrane surface to tiny droplets carrying different concentrations of sulfonated kraft lignin (SKL, 3, 5, and 7 wt %) and trimesoyl chloride (TMC, 0.2 wt %). The main advantages of this surface coating technique are minimal solvent consumption (less than 0.05 mL/cm2) and precise control over interfacial polymerization. Zeta potential measurements of the coated membranes exhibited enhancements in negative charge compared to the control membrane. This enhancement is attributed to the unreacted carboxyl functional groups of the SKL and TMC monomers, as well as the presence of sulfonate groups (SO3) in the structure of SKL. AFM results showed a notable decrease in membrane surface roughness after polyester coating due to the slower diffusion of SKL to the interface and a milder reaction with TMC. In terms of fouling resistance, the membrane coated with a polyester composed of 7 wt % SKL showed a 90% flux recovery ratio (FRR) during Bovine Serum Albumin (BSA) filtration, showing a 15% improvement compared to the control membrane (PA). PE-coated membranes provided stable separation performance over 40 h of filtration. The sodium chloride rejection and water flux displayed minimal variations, indicating the robustness of the coating layer. The final section of the presented study focuses on assessing the feasibility of scaling up and the cost-effectiveness of the proposed technique. The demonstrated ease of scalability and a notable reduction in chemical consumption establish this method as a viable, environmentally friendly, and sustainable solution for surface modification.

High-Performance Tin Oxide Thin-Film Transistors Realized by Codoping and Their Application in Logic Circuits.

Tin oxide is a promising channel material, offering the advantages of being low-cost and environmentally friendly and having a wide band gap. However, despite the high electron mobility of SnO2 in bulk, the corresponding thin-film transistors (TFTs) generally exhibit moderate performance, hindering their widespread application. Herein, we proposed a codoping strategy to improve both the electrical property and the stability of SnO2 TFTs. A comparative analysis between doped and undoped SnO2 was conducted. It is observed that taking advantage of the difference in ionic radii between two dopants (indium and gallium) and the tin ions in the host lattice can effectively reduce impurity-induced strain. Additionally, we investigated the effect of codoping content on SnO2 TFTs. The optimal codoped SnO2 (TIGO) TFTs demonstrate high performance, featuring a field-effect mobility of 15.9 cm2/V·s, a threshold voltage of 0.2 V, a subthreshold swing of 0.5 V/decade, and an on-to-off current ratio of 2.2 × 107. Furthermore, the devices show high stability under both positive and negative bias stress conditions with a small threshold voltage shift of 1.8 and -1.2 V, respectively. Utilizing the TIGO TFTs, we successfully constructed a resistor-loaded unipolar inverter with a high gain of 10.76. This study highlights the potential of codoped SnO2 TFTs for advanced applications in electronic devices.