Study on the Infrared and Raman spectra of Ti3AlB2, Zr3AlB2, Hf3AlB2, and Ta3AlB2 by first-principles calculations.

In this paper, the crystal geometry, electronic structure, lattice vibration, Infrared and Raman spectra of ternary layered borides M3AlB2 (M = Ti, Zr, Hf, Ta) are studied by using first principles calculation method based on the density functional theory. The electronic structure of M3AlB2 indicates that they are all electrical conductors, and the d orbitals of Ti, Zr, Hf, and Ta occupy most of the bottom of the conduction band and most of the top of the valence band. Al and B have lower contributions near their Fermi level. The lightweight and stronger chemical bonds of atom B are important factors that correspond to higher levels of peak positions in the Infrared and Raman spectra. However, the vibration frequencies, phonon density of states, and peak positions of Infrared and Raman spectra are significantly lower because of heavier masses and weaker chemical bonds for M and Al atoms. And, there are 6 Infrared active modes A2u and E1u, and 7 Raman active modes, namely A1g, E2g, and E1g corresponding to different vibration frequencies in M3AlB2. Furthermore, the Infrared and Raman spectra of M3AlB2 were obtained respectively, which intuitively provided a reliable Infrared and Raman vibration position and intensity theoretical basis for the experimental study.

Structure, bonding and electronic characteristics of amorphous Se.

Ovonic threshold switching (OTS) selectors can effectively improve the storage density and suppress the leakage current of advanced phase-change memory devices. As a prototypical OTS material, amorphous GeSe is widely investigated. But the attention paid to amorphous Se (i.e., the functional constituent in amorphous GeSe) has been very limited up to now. Here we have explored the structure, bonding and electronic characteristics of amorphous Se using ab initio molecular dynamics simulations. The results reveal that the Se atoms in amorphous Se tend to form 2-coordinated configurations, and they connect with each other to form long chains. The fraction of the vibrational density of state located in the high frequency range is relatively large, and the formation energy of the Se-Se bond is as large as 4.44 eV, hinting that the Se-Se bonds in chains possess high stability. In addition, the mid-gap state related to the OTS behavior is also found in amorphous Se despite the small proportion. Our findings enrich the knowledge of amorphous Se, which aids the applications of Se-based OTS selectors.

DFT-Based Study of the Structure, Stability, and Spectral and Optical Properties of Gas-Phase NbMgn (n = 2-12) Clusters.

Gas-phase NbMgn (n = 2-12) clusters were fully searched by CALYPSO software, and then the low-energy isomers were further optimized and calculated under DFT. It is shown that the three lowest energy isomers of NbMgn (n = 3-12) at each size are grown from two seed structures, i.e., tetrahedral and pentahedral structures, and the transition size occurs at the NbMg8 cluster. Interestingly, the relative stability calculations of the NbMg8 cluster ground-state isomer stand out under the examination of several parameters' calculations. The charge-transfer properties of the clusters of the ground-state isomers of various sizes had been comprehensively investigated. In order to be able to provide data guidance for future experimental probing of these ground-state clusters, this work also predicted infrared and Raman spectra at the same level of theoretical calculations. The results show that the multipeak nature of the IR and Raman spectra predicts that it is difficult to distinguish them directly. Finally, the optical properties of these clusters were investigated by calculating the static linear, second-order nonlinear, and third-order nonlinear coefficients. Importantly and interestingly, the NbMg8 cluster was shown to have superior nonlinear optical characteristics to all other clusters; thus, it is a powerful candidate for a potentially ultrasensitive nonlinear optical response device for some special purpose.

Exceptional green hydrogen production performance of a ruthenium-modulated nickel selenide.

Developing low-cost, high-efficiency and stable electrocatalysts for the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) is crucial but highly challenging. Density functional theory (DFT) calculations reveal that doping ruthenium (Ru) into catalysts can effectively optimize their electronic structure, hence leading to an optimal Gibbs free energy on the catalyst surface. Herein, an ultra-low Ru (about 2.34 wt%)-doped Ni3Se2 nanowire catalyst (i.e., Ru/Ni3Se2) supported on nickel foam has been fabricated by a hydrothermal reaction followed by a chemical etching process. The unique three-dimensional (3D) interconnected nanowires not only endow Ru and Ni3Se2 with uniform distribution and coupling, but also provide higher electrical conductivity, more active sites, an optimized electronic structure and favorable reaction kinetics. Therefore, the as-obtained Ru/Ni3Se2 catalyst exhibits excellent electrocatalytic performance, with low overpotentials of 24 and 211 mV to supply a current density value of 10 mA cm-2 towards the HER and OER in an alkaline environment, respectively. Notably, the as-fabricated Ru/Ni3Se2 catalyst only requires a low voltage of 1.476 V to derive a current density of 10 mA cm-2 in the constructed two-electrode alkaline electrolyzer and exhibits exceptionally high stability. This work will provide a novel strategy for the design and fabrication of low-cost and high-performance bifunctional electrocatalysts for hydrogen production by water electrolysis.

Efficiency enhancement mechanism of piezoelectric effect in long wavelength InGaN-based LED.

Improving the luminescence efficiency of InGaN-based long wavelength LEDs for use in micro-LED full-colour displays remains a huge challenge. The strain-induced piezoelectric effect is an effective measure for modulating the carrier redistribution at the InGaN/GaN heterointerfaces. Our theoretical results reveal that the hole injection is significantly improved by the diminution of the valence band offset (VBO) of the InGaN/GaN heterointerfaces along the [0001] direction, and inversely, the VBO increases along the [0001] direction. The energy band structures showed that the tensile strain of the GaN film grown on a silicon (Si) substrate could weaken the internal electric field of the InGaN well layer leading to a flattening of the energy band, which increases the overlap of electron and hole wave functions. In addition, the strain-induced piezoelectric polarisation of the InGaN layer on the Si substrate generates opposite sheet-bound charges at the heterointerfaces, which causes a reduction in the depletion region of the InGaN/GaN quantum wells (QWs). A systematic analysis illustrates that the control of the piezoelectric polarisation of the InGaN QW layer is available improve the internal quantum efficiency of the InGaN-based LEDs.

Three-Dimensional Carbon Foam Modified with Mg3N2 for Ultralong Cyclability of a Dendrite-Free Li Metal Anode.

Uncontrolled growth of lithium dendrites and huge volume change during the lithium plating/stripping process as well as poor mechanical properties of the solid electrolyte interphase (SEI) are key obstacles to the development of a stable Li metal anode. Here, an ultralight Mg3N2-modified carbon foam (CF-Mg3N2) was fabricated as a collector to address these issues. The calculated results show that the CF-Mg3N2 composite is relatively stable in terms of energy. Based on the synergistic effect of the three-dimensional skeleton and the lithiophilic nature of Mg3N2, homogeneous lithium deposition/stripping was realized around the foam carbon skeleton with an extremely low nucleation overpotential (∼9.3 mV) and high retention of Coulombic efficiency (99.3%) as well as long cyclability (700 cycles and 3000 h in half and symmetrical cells, respectively). Meanwhile, Mg3N2-CF@Li//LiFePO4 full cells also showed better rate capability and more stable cycling capability than CF@Li//LiFePO4 and Li//LiFePO4 cells, exhibiting extreme practicality. Accordingly, the design concept mentioned in this work provides a far-reaching influence on the development of a stable Li metal anode.

Atomic and electronic structures of charge-doping VO2: first-principles calculations.

The atomic and electronic structures of charge-doping VO2 are investigated by using first-principles calculations. Hole doping is more conducive to stabilizing the structure of VO2 than electron doping. The controllable phase transition temperature is coupled with changes in atomic and electronic structures. With the increase in hole density, the V-V chains and twisting angle experience a dramatic change, and the band gap (0.69-0 eV) is rapidly reduced due to orbital switching between the d x 2-y 2 and d z 2 /d yz orbitals. However, as the electron density increases, the band gap (0.69-0.502 eV) narrows slightly, while the V-O bond lengths significantly increase. The current results provide up a variable way to tune the VO2 phase transition temperature through charge-doping.

Chemical functionalization of the ZnO monolayer: structural and electronic properties.

Two-dimensional zinc oxide (ZnO) materials have been extensively investigated both experimentally and theoretically due to their novel properties and promising applications in optoelectronic and spintronic devices; however, how to tune the electronic property of the ZnO monolayer is still a challenge. Herein, employing the first-principles calculations, we explored the effect of chemical functionalization on the structural and electronic properties of the ZnO monolayer. The results demonstrated that the hydrogenated-, fluorinated- or Janus-functionalized ZnO monolayers were thermodynamically and mechanically stable except for the fully hydrogenated ZnO monolayer. The band gap of the ZnO monolayer could be effectively modulated by hydrogenation or fluorination, which varied from 0 to 2.948 eV, as obtained by the PBE functional, and from 0 to 5.114 eV, as obtained by the HSE06 functional. In addition, a nonmagnetic metal → nonmagnetic semiconductor transition was achieved after hydrogenation, whereas a transition from a magnetic half-metal to nonmagnetic semiconductor occurred after fluorination of the ZnO monolayer. These results demonstrate that tunability of the electronic properties of the ZnO monolayer can be realized by chemical functionalization for future nanoelectronic device applications.

Visualization of the Diffusion Pathway of Protons in (NH4)2Si0.5Ti0.5P4O13 as an Electrolyte for Intermediate-Temperature Fuel Cells.

We demonstrate that (NH4)2Si0.5Ti0.5P4O13 is an excellent proton conductor. The crystallographic information concerning the hydrogen positions is unraveled from neutron-powder-diffraction (NPD) data for the first time. This study shows that all the hydrogen atoms are connected though H bonds, establishing a two-dimensional path between the [(Si0.5Ti0.5)P4O132-]n layers for proton diffusion across the crystal structure by breaking and reconstructing intermediate H-O═P bonds. This transient species probably reduces the potential energy of the H jump from an ammonium unit to the next neighboring NH4+ unit. Both theoretical and experimental results support an interstitial-proton-conduction mechanism. The proton conductivities of (NH4)2Si0.5Ti0.5P4O13 reach 0.0061 and 0.024 S cm-1 in humid air at 125 and 250 °C, respectively. This finding demonstrates that (NH4)2Si0.5Ti0.5P4O13 is a promising electrolyte material operating at 150-250 °C. This work opens up a new avenue for designing and fabricating high-performance inorganic electrolytes.

Antisite occupation induced single anionic redox chemistry and structural stabilization of layered sodium chromium sulfide.

The intercalation compounds with various electrochemically active or inactive elements in the layered structure have been the subject of increasing interest due to their high capacities, good reversibility, simple structures, and ease of synthesis. However, their reversible intercalation/deintercalation redox chemistries in previous compounds involve a single cationic redox reaction or a cumulative cationic and anionic redox reaction. Here we report an anionic redox chemistry and structural stabilization of layered sodium chromium sulfide. It was discovered that the sulfur in sodium chromium sulfide is electrochemically active, undergoing oxidation/reduction rather than chromium. Significantly, sodium ions can successfully move out and into without changing its lattice parameter c, which is explained in terms of the occurrence of chromium/sodium vacancy antisite during desodiation and sodiation processes. Our present work not only enriches the electrochemistry of layered intercalation compounds, but also extends the scope of investigation on high-capacity electrodes.The rational design of intercalation electrodes is largely confined to the optimization of redox chemistry of transition metals and oxygen. Here, the authors report the single anionic redox process in NaCrS2 where it is sulfur rather than chromium that works as the electrochemical active species.

Erratum: Boron Substituted Na3V2(P1-xBxO4)3 Cathode Materials with Enhanced Performance for Sodium-Ion Batteries.

[This corrects the article DOI: 10.1002/advs.201600112.].

Boron Substituted Na3V2(P1-x B x O4)3 Cathode Materials with Enhanced Performance for Sodium-Ion Batteries.

The development of excellent performance of Na-ion batteries remains great challenge owing to the poor stability and sluggish kinetics of cathode materials. Herein, B substituted Na3V2P3-x B x O12 (0 ≤ x ≤ 1) as stable cathode materials for Na-ion battery is presented. A combined experimental and theoretical investigations on Na3V2P3-x B x O12 (0 ≤ x ≤ 1) are undertaken to reveal the evolution of crystal and electronic structures and Na storage properties associated with various concentration of B. X-ray diffraction results indicate that the crystal structure of Na3V2P3-x B x O12 (0 ≤ x ≤ 1/3) consisted of rhombohedral Na3V2(PO4)3 with tiny shrinkage of crystal lattice. X-ray absorption spectra and the calculated crystal structures all suggest that the detailed local structural distortion of substituted materials originates from the slight reduction of V-O distances. Na3V2P3-1/6B1/6O12 significantly enhances the structural stability and electrochemical performance, giving remarkable enhanced capacity of 100 and 70 mAh g-1 when the C-rate increases to 5 C and 10 C. Spin-polarized density functional theory (DFT) calculation reveals that, as compared with the pristine Na3V2(PO4)3, the superior electrochemical performance of the substituted materials can be attributed to the emergence of new boundary states near the band gap, lower Na+ diffusion energy barriers, and higher structure stability.

Sputtering Deposition of Sandwich-Structured V2O5/Metal (V, W)/V2O5 Multilayers for the Preparation of High-Performance Thermally Sensitive VO2 Thin Films with Selectivity of VO2 (B) and VO2 (M) Polymorph.

For specific application to an uncooled infrared detector, VO2 thin films should have a series of characteristics including purposefully chosen polymorphs, accurate stoichiometry, phase stabilization, a high temperature-coefficient of resistance (TCR), and suitable square-resistance. This work reports controllable preparation of high-performance VO2 films via post annealing of a sandwich-structured V2O5/metal (V, W)/V2O5 multilayer precursor, which was deposited by RF magnetron sputtering. This sandwich structure can dynamically regulate oxygen contents and doping element levels in the films, enabling us to achieve accurate regulation of stoichiometry and polymorphs. The precursor films undergo a B to M phase transition depending on the quantity of the metal layers. At the thickness of the metal layer below a limitation, the resulting film after heat treatment was VO2 (B), and above the limitation, the product was VO2 (M). The optical modulation of the VO2 (M) in the near-infrared region can be tuned from 1.2 to 39.8% (ΔT2000 nm). TCR values can range from -1.89 to -4.29%/K and the square-resistances at room temperature (R0) from 69.68 to 12.63 kΩ. The simplicity in phase regulation of the present method and the superior optical and electrical properties of the films may allow its wide applications in thermo-opto-electro sensing devices.

Hydrogen-doping induced reduction in the phase transition temperature of VO2: a first-principles study.

VO2 is a promising thermochromic material that can intelligently control the transmittance of sunlight in the near-infrared region in response to temperature change, although the high phase transition temperature (Tc) of 340 K restricts its wide application. Our first-principles calculations show that hydrogen is an efficient dopant which can stabilize the metallic VO2 phase at ambient temperature through reducing Tc by 38 K/at% H. The reduction in Tc is coupled with the changes in atomic and electronic structures, i.e., the V-V chains feature the dimerization characteristics in H-doped VO2(R) and the V-O bonds become less ionic due to the formation of a typical H-O covalent bond. In addition, hydrogen-doped VO2 is more sensitive to external strain as compared with pure VO2, implying that Tc can be further regulated through a combination of H-doping and strain.