Layer-by-Layer Assembled Oxide Nanoparticle Electrodes with High Transparency, Electrical Conductivity, and Electrochemical Activity by Reducing Organic Linker-Induced Oxygen Vacancies.

Solution-processable transparent conducting oxide (TCO) nanoparticle (NP)-based electrodes are limited by their low electrical conductivity, which originates from the low level of oxygen vacancies within NPs and the contact resistance between neighboring NPs. Additionally, these electrodes suffer from the troublesome trade-off between electrical conductivity and optical transmittance and the restricted shape of substrates (i.e., only flat substrates). An oxygen-vacancy-controlled indium tin oxide (ITO) NP-based electrode is introduced using carbon-free molecular linkers with strong chemically reducing properties. Specifically, ITO NPs are layer-by-layer assembled with extremely small hydrazine monohydrate linkers composed of two amine groups, followed by thermal annealing. This approach markedly improves the electrical conductivity of ITO NP-based electrodes by significantly increasing the level of oxygen vacancies and decreasing the interparticle distance (i.e., contact resistance) without sacrificing optical transmittance. The prepared electrodes surpass the optical/electrical performance of TCO NP-based electrodes reported to date. Additionally, the nanostructured ITO NP films can be applied to more complex geometric substrates beyond flat substrates, and furthermore exhibit a prominent electrochemical activity. This approach can provide an important basis for developing a wide range of highly functional transparent conducting electrodes.

Charge-Transfer-Modulated Transparent Supercapacitor Using Multidentate Molecular Linker and Conductive Transparent Nanoparticle Assembly.

One of the most critical issues in preparing high-performance transparent supercapacitors (TSCs) is to overcome the trade-off between areal capacitance and optical transmittance as well as that between areal capacitance and rate capability. Herein, we introduce a TSC with high areal capacitance, fast rate capability, and good optical transparency by minimizing the charge transfer resistance between pseudocapacitive nanoparticles (NPs) using molecular linker- and conductive NP-mediated layer-by-layer (LbL) assembly. For this study, bulky ligand-stabilized manganese oxide (MnO) and indium tin oxide (ITO) NP multilayers are LbL-assembled through a ligand exchange reaction between native ligands and small multidentate linkers (tricarballylic acid). The introduced molecular linker substantially decreases the separation distance between neighboring NPs, thereby reducing the contact resistance of electrodes. Moreover, the periodic insertion of ITO NPs into the MnO NP-based electrodes can lower the charge transfer resistance without a meaningful loss of transmittance, which can significantly improve the areal capacitance. The areal capacitances of the ITO NP-free electrode and the ITO NP-incorporated electrode are 24.6 mF cm-2 (at 61.6% transmittance) and 40.5 mF cm-2 (at 60.8%), respectively, which outperforms state of the art TSCs. Furthermore, we demonstrate a flexible symmetric solid-state TSC that exhibits scalable areal capacitance and optical transmittance.

High-performance electrochromic films with fast switching times using transparent/conductive nanoparticle-modulated charge transfer.

One of the most critical issues in electrochromic (EC) films based on transition metal oxides such as tungsten oxides (WOx) is their poor charge transfer property, which is closely related to EC performance. Herein, high-performance EC films with enhanced charge transport are prepared using small-molecule linkers and transparent/conductive nanoparticles (NPs). In this work, oleylamine (OAm)-stabilized WO2.72 nanorods (NRs) and OAm-stabilized indium tin oxide (ITO) NPs are layer-by-layer (LbL)-assembled with small-molecule linkers (tris(2-aminoethyl)amine, TREN) using a ligand-exchange reaction between bulky/insulating OAm ligands and TREN molecules. In this case, there is only one TREN layer between neighboring inorganic components (WO2.72 NRs and/or ITO NPs), resulting in a dramatic decrease in the separation distance. This minimized separation distance as well as the periodic insertion of transparent/conductive ITO NPs can significantly reduce the charge transfer resistance within WO2.72 NR-based EC films, which remarkably improves their EC performance. Compared to EC films without ITO NPs, the formed EC films with ITO NPs exhibit faster switching responses (4.1 times in coloration time and 3.5 times in bleaching time) and a maximum optical modulation of approximately 55.8%. These results suggest that electrochemical performance, including EC performance, can be significantly improved through structural/interfacial designing of nanocomposites.

Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

Multifunctional Dendrimer Ligands for High-Efficiency, Solution-Processed Quantum Dot Light-Emitting Diodes.

We present multifunctional dendrimer ligands that serve as the charge injection controlling layer as well as the adhesive layer at the interfaces between quantum dots (QDs) and the electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs). Specifically, we use primary amine-functionalized dendrimer ligands (e.g., a series of poly(amidoamine) dendrimers (PADs, also referred to PAMAM)) that bind to the surface of QDs by replacing the native ligands (oleic acids) and also to the surface of ZnO ETL. PAD ligands control the electron injection rate from ZnO ETL into QDs by altering the electronic energy levels of the surface of ZnO ETL and thereby improve the charge balance within QDs in devices, leading to the enhancement of the device efficiency. As an ultimate achievement, the device efficiency (peak external quantum efficiency) improves by a factor of 3 by replacing the native ligands (3.86%) with PAD ligands (11.36%). In addition, multibranched dendrimer ligands keep the QD emissive layer intact during subsequent solution processing, enabling us to accomplish solution-processed QLEDs. The approach and results in the present study emphasize the importance of controlling the ligands of QDs to enhance QLED performance and also offer simple yet effective chemical mean toward all-solution-processed QLEDs.

Colloidal Spherical Quantum Wells with Near-Unity Photoluminescence Quantum Yield and Suppressed Blinking.

Thick inorganic shells endow colloidal nanocrystals (NCs) with enhanced photochemical stability and suppression of photoluminescence intermittency (also known as blinking). However, the progress of using thick-shell heterostructure NCs in applications has been limited due to the low photoluminescence quantum yield (PL QY ≤ 60%) at room temperature. Here, we demonstrate thick-shell NCs with CdS/CdSe/CdS seed/spherical quantum well/shell (SQW) geometry that exhibit near-unity PL QY at room temperature and suppression of blinking. In SQW NCs, the lattice mismatch is diminished between the emissive CdSe layer and the surrounding CdS layers as a result of coherent strain, which suppresses the formation of misfit defects and consequently permits ∼100% PL QY for SQW NCs with a thick CdS shell (≥5 nm). High PL QY of thick-shell SQW NCs is preserved even in concentrated dispersion and in film under thermal stress, which makes them promising candidates for applications in solid-state lightings and luminescent solar concentrators.

Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array.

Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au(NPs)) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au(NP))(n) films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO2 gate dielectric layer. For a single AuNP layer (i.e. PAD/TOA-Au(NP))1) with a number density of 1.82 × 10(12) cm(-2), the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au(NP) layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV(th)) exceeding 145 V, a fast switching speed (1 µs), a high program/erase (P/E) current ratio (greater than 10(6)) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate.