Signatures of two-dimensional superconductivity emerging within a three-dimensional host superconductor.

Spatial disorder has been shown to drive two-dimensional (2D) superconductors to an insulating phase through a superconductor-insulator transition (SIT). Numerical calculations predict that with increasing disorder, emergent electronic granularity is expected in these materials-a phenomenon where superconducting (SC) domains on the scale of the material's coherence length are embedded in an insulating matrix and coherently coupled by Josephson tunneling. Here, we present spatially resolved scanning tunneling spectroscopy (STS) measurements of the three-dimensional (3D) superconductor BaPb1-x Bi x O3 (BPBO), which surprisingly demonstrate three key signatures of emergent electronic granularity, having only been previously conjectured and observed in 2D thin-film systems. These signatures include the observation of emergent SC domains on the scale of the coherence length, finite energy gap over all space, and strong enhancement of spatial anticorrelation between pairing amplitude and gap magnitude as the SIT is approached. These observations are suggestive of 2D SC behavior embedded within a conventional 3D s-wave host, an intriguing but still unexplained interdimensional phenomenon, which has been hinted at by previous experiments in which critical scaling exponents in the vicinity of a putative 3D quantum phase transition are consistent only with dimensionality d = 2.

Phase Separation of Dirac Electrons in Topological Insulators at the Spatial Limit.

In this work we present unique signatures manifested by the local electronic properties of the topological surface state in Bi2Te3 nanostructures as the spatial limit is approached. We concentrate on the pure nanoscale limit (nanoplatelets) with spatial electronic resolution down to 1 nm. The highlights include strong dependencies on nanoplatelet size: (1) observation of a phase separation of Dirac electrons whose length scale decreases as the spatial limit is approached, and (2) the evolution from heavily n-type to lightly n-type surface doping as nanoplatelet thickness increases. Our results show a new approach to tune the Dirac point together with reduction of electronic disorder in topological insulator (TI) nanostructured systems. We expect our work will provide a new route for application of these nanostructured Dirac systems in electronic devices.

Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies.

As a promising non-precious catalyst for the hydrogen evolution reaction (HER; refs ,,,,), molybdenum disulphide (MoS2) is known to contain active edge sites and an inert basal plane. Activating the MoS2 basal plane could further enhance its HER activity but is not often a strategy for doing so. Herein, we report the first activation and optimization of the basal plane of monolayer 2H-MoS2 for HER by introducing sulphur (S) vacancies and strain. Our theoretical and experimental results show that the S-vacancies are new catalytic sites in the basal plane, where gap states around the Fermi level allow hydrogen to bind directly to exposed Mo atoms. The hydrogen adsorption free energy (ΔGH) can be further manipulated by straining the surface with S-vacancies, which fine-tunes the catalytic activity. Proper combinations of S-vacancy and strain yield the optimal ΔGH = 0 eV, which allows us to achieve the highest intrinsic HER activity among molybdenum-sulphide-based catalysts.

Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide.

The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this 'artificial atom' concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics.