Erratum: Addition to "High On/Off Ratio Carbon Quantum Dot-Chitosan Biomemristors with Coplanar Nanogap Electrodes".

[This corrects the article DOI: 10.1021/acsaelm.2c00979.].

Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities.

Electrochemical metallization memory (ECM) devices have been made by sub-stoichiometric deposition of a tantalum oxide switching film (Ta2O5-x ) using sputtering. We investigated the influence of zirconium as the active top electrode material in the lithographically fabricated ECM devices. A simple capacitor like (Pt/Zr/Ta2O5-x /Pt) structure represented the resistive switching memory. A cyclic voltammetry measurement demonstrated the electrochemical process of the memory device. The I-V characteristics of ECMs show stable bipolar resistive switching properties with reliable endurance and retention. The resistive switching mechanism results from the formation and rupture of a conductive filament characteristic of ECM. Our results suggest that Zr can be considered a potential active electrode in the ECMs for the next generation of nonvolatile nanoelectronics. We successfully showed that the ECM device can work under AC pulses to emulate the essential characteristics of an artificial synapse by further improvements.

Solution-Processed Flexible Biomemristor Based on Gold-Decorated Chitosan.

The main requirements for skin-attachable memory devices are flexibility and biocompatibility. We represent a flexible, transparent, and biocompatible resistive switching random access memory (ReRAM) based on gold-decorated chitosan for future flexible and wearable electronics. The device with an Ag/Au-chitosan/Au cross-bar structure shows nonvolatile ReRAM properties. This fabricated Au-chitosan-based biocompatible ReRAM (bioReRAM) shows reliable bipolar memory performance with mechanical flexibility. The device shows essential memory characterizations including long data retention and hundreds of switching cycles. The origin of the resistance switching properties is related to trap-assisted space-charge-limited conduction in the high-resistance state and formation/annihilation of a conductive filament in the low-resistance state. This transparent bioReRAM is a viable candidate for flexible and biodegradable nanoelectronic devices.

Effect of temperature on the oxidation of Cu nanowires and development of an easy to produce, oxidation-resistant transparent conducting electrode using a PEDOT:PSS coating.

Oxidation can strongly influence the performance of Cu nanowires (CuNWs) by decreasing their conductivity. Here, we identify and investigate a way to prevent the oxidation process of CuNWs to maintain the high conducting performance of CuNWs as transparent electrodes. CuNWs were synthesised using an aqueous method. We prepared several temperature treatments (from 0-300 °C) to represent oxidation of CuNWs in different environments, to study the oxidation process and changes in morphology in detail. Depending on the temperature, smooth and uniform CuNWs exposed to oxidation produced rough Cu2O and CuO nanowires. We then suggest a method of protecting nanowires from oxidation, using the Mayer rod coating method to apply a layer of PEDOT:PSS to a transparent conducting film of CuNWs. The result indicates that this method of protection can protect the film, and maintain a stable, and constant resistance over of time, without effecting the excellent conductivity properties of pure CuNWs.

Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices.

Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices.

Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors.

Implementation of biocompatible materials in resistive switching memory (ReRAM) devices provides opportunities to use them in biomedical applications. We demonstrate a robust, nonvolatile, flexible, and transparent ReRAM based on potato starch. We also introduce a biomolecular memory device that has a starch-chitosan composite layer. The ReRAM behavior can be controlled by mixing starch with chitosan in the resistive switching layer. Whereas starch-based biomemory devices which show abrupt changes in current level; the memory device with mixed biopolymers undergoes gradual changes. Both devices exhibit uniform and robust programmable memory properties for nonvolatile memory applications. The explicated source of the bipolar resistive switching behavior is assigned to formation and rupture of carbon-rich filaments. The gradual set/reset behavior in the memory device based on a starch-chitosan mixture makes it suitable for use in neuromorphic devices.

Resistive switching memory based on bioinspired natural solid polymer electrolytes.

A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. The memory device based on chitosan as a natural solid polymer electrolyte can be switched reproducibly between high and low resistance states. In addition, the data retention measurement confirmed the reliability of the chitosan-based nonvolatile memory device. The transparent Ag-embedded chitosan film showed an acceptable and comparable resistive switching behavior on the flexible plastic substrate as well. A cost-effective, environmentally benign memory device using chitosan satisfies the functional requirements of nonvolatile memory operations.