A boron-rich boron-carbide material (B4+δC) was synthesized by spark plasma sintering of a ball-milled mixture of high-purity boron powder and graphitic carbon at a pressure of 7 MPa and a temperature of 1930 °C. This high-pressure, high-temperature synthesized material was recovered and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, Vickers hardness measurements, and thermal oxidation studies. The X-ray diffraction studies revealed a single-phase rhombohedral structure (space group R-3m) with lattice parameters in hexagonal representation as a = 5.609 ± 0.007 Å and c = 12.082 ± 0.02 Å. The experimental lattice parameters result in a value of δ = 0.55, or the composition of the synthesized compound as B4.55C. The high-resolution scans of boron binding energy reveal the existence of a B-C bond at 188.5 eV. Raman spectroscopy reveals the existence of a 386 cm-1 vibrational mode representative of C-B-B linear chain formation due to excess boron in the lattice. The measured Vickers microhardness at a load of 200 gf shows a high hardness value of 33.8 ± 2.3 GPa. Thermal gravimetric studies on B4.55C were conducted at a temperature of 1300 °C in a compressed dry air environment, and its behavior is compared to other high-temperature ceramic materials such as high-entropy transition metal boride. The high neutron absorption cross section, high melting point, high mechanical strength, and thermal oxidation resistance make this material ideal for applications in extreme environments.
Valence transition could induce structural, insulator-metal, nonmagnetic-magnetic and superconducting transitions in rare-earth metals and compounds, while the underlying physics remains unclear due to the complex interaction of localized 4f electrons as well as their coupling with itinerant electrons. The valence transition in the elemental metal europium (Eu) still has remained as a matter of debate. Using resonant x-ray emission scattering and x-ray diffraction, we pressurize the states of 4f electrons in Eu and study its valence and structure transitions up to 160 GPa. We provide compelling evidence for a valence transition around 80 GPa, which coincides with a structural transition from a monoclinic (C2/c) to an orthorhombic phase (Pnma). We show that the valence transition occurs when the pressure-dependent energy gap between 4f and 5d electrons approaches the Coulomb interaction. Our discovery is critical for understanding the electrodynamics of Eu, including magnetism and high-pressure superconductivity.
Among inorganic, Earth-abundant, and low-toxicity photovoltaic technologies, Sb2Se3 has emerged as a strong material contender reaching over 10% solar cell power conversion efficiency. Nevertheless, the bottleneck of this technology is the high deficit of open-circuit voltage (V OC) as seen in many other emerging chalcogenide technologies. Commonly, the loss of V OC is related to the nonradiative carrier recombination through defects, but other material characteristics can also limit the achievable V OC. It has been reported that in isostructural compound Sb2S3, self-trapped excitons are readily formed leading to 0.6 eV Stokes redshift in photoluminescence (PL) and therefore significantly reducing the obtainable V OC. However, whether Sb2Se3 has the same limitations has not yet been examined. In this work, we aim to identify main radiative carrier recombination mechanisms in Sb2Se3 single crystals and estimate if there is a fundamental limit for obtainable V OC. Optical transitions in Sb2Se3 were studied by means of photoreflectance and PL spectroscopy. Temperature, excitation intensity, and polarization-dependent optical characteristics were measured and analyzed. We found that at low temperature, three distinct radiative recombination mechanisms were present and were strongly influenced by the impurities. The most intensive PL emissions were located near the band edge. In conclusion, no evidence of emission from self-trapped excitons or band-tails was observed, suggesting that there is no fundamental limitation to achieve high V OC, which is very important for further development of Sb2Se3-based solar cells.
Analogous to 2D layered transition-metal dichalcogenides, the TlSe family of quasi-one dimensional chain materials with the Zintl-type structure exhibits novel phenomena under high pressure. In the present work, we have systematically investigated the high-pressure behavior of TlInTe2 using Raman spectroscopy, synchrotron X-ray diffraction (XRD), and transport measurements, in combination with first principles crystal structure prediction (CSP) based on evolutionary approach. We found that TlInTe2 undergoes a pressure-induced semiconductor-to-semimetal transition at 4 GPa, followed by a superconducting transition at 5.7 GPa (with Tc = 3.8 K). An unusual giant phonon mode (Ag) softening appears at â¼10-12 GPa as a result of the interaction of optical phonons with the conduction electrons. The high-pressure XRD and Raman spectroscopy studies reveal that there is no structural phase transitions observed up to the maximum pressure achieved (33.5 GPa), which is in agreement with our CSP calculations. In addition, our calculations predict two high-pressure phases above 35 GPa following the phase transition sequence as I4/mcm (B37) â Pbcm â Pm3Ì m (B2). Electronic structure calculations suggest Lifshitz (L1 & L2-type) transitions near the superconducting transition pressure. Our findings on TlInTe2 open up a new avenue to study unexplored high-pressure novel phenomena in TlSe family induced by Lifshitz transition (electronic driven), giant phonon softening, and electron-phonon coupling.
Pressure is a unique thermodynamic variable to explore the phase competitions and novel phases inaccessible at ambient conditions. The resistive switching material GaTa4Se8 displays several quantum phases under pressure, such as a Jeff = 3/2 Mott insulator, a correlated quantum magnetic metal, and d-wave topological superconductivity, which has recently drawn considerable interest. Using high-pressure Raman spectroscopy, X-ray diffraction, extended X-ray absorption, transport measurements, and theoretical calculations, we reveal a complex phase diagram for GaTa4Se8 at pressures exceeding 50 GPa. In this previously unattained pressure regime, GaTa4Se8 ranges from a Mott insulator to a metallic phase and exhibits superconducting phases. In contrast to previous studies, we unveil a hidden correlation between the structural distortion and band gap prior to the insulator-to-metal transition, and the metallic phase shows superconductivity with structural and magnetic properties that are distinctive from the lower-pressure phase. These discoveries highlight that GaTa4Se8 is a unique material to probe novel quantum phases from a structural, metallicity, magnetism, and superconductivity perspective.
The quite simple but relatively stable VF3-type compounds are known to be of major interest due to their building blocks - octahedra that are extremely important in perovskites as well. Here, we show that the VF6 octahedron in VF3 varies over a fairly wide pressure range (0-50 GPa), maintaining undisturbed rhombohedral crystal symmetry. Half of this pressure, VF6 rotates easily while the other undergoes strong uniaxial deformation in a "super-dense" condition. The congested sphere packing ultimately does not endure and drives the material to amorphize. We observed that the amorphous state could be quenched and acquire a transparent glass-like appearance when unloaded to ambient conditions. Dramatic, pressure-induced changes are clarified by phonon dispersion curves with the imaginary phonon mode, the so-called phonon soft mode, which indicates the structural instability. The distortion of the VF6 octahedra is attributed to the distinctive amorphization that could be further searched for throughout the whole almost identical VF3-type series providing metal trifluorides of various amorphous species.
A superstructure can elicit versatile new properties in materials by breaking their original geometrical symmetries. It is an important topic in the layered graphene-like two-dimensional transition metal dichalcogenides, but its origin remains unclear. Using diamond-anvil cell techniques, synchrotron X-ray diffraction, X-ray absorption, and first-principles calculations, we show that the evolution from weak van der Waals bonding to Heisenberg covalent bonding between layers induces an isostructural transition in quasi-two-dimensional 1T-type VSe2 at high pressure. Furthermore, our results show that high pressure induces a novel superstructure at 15.5 GPa rather than suppresses it as it would normally, which is unexpected. It is driven by Fermi-surface nesting, enhanced by pressure-induced distortion. The results suggest that the superstructure not only appears in the two-dimensional structure but also can emerge in the pressure-tuned three-dimensional structure with new symmetry and develop superconductivity.
Understanding the volume collapse phenomena in rare-earth materials remains an important challenge due to a lack of information on 4f electronic structures at different pressures. Here, we report the first high-pressure inelastic X-ray scattering measurement on elemental cerium (Ce) metal. By overcoming the ultralow signal issue in the X-ray measurement at the Ce N4,5-edge, we observe the changes of unoccupied 4f states across the volume collapse transition around 0.8 GPa. To help resolve the longstanding debate on the Anderson-Kondo and Mott-Hubbard models, we further compare the experiments with extended multiplet calculations that treat both screening channels on equal footing. The results indicate that a modest change in the 4f-5d Kondo coupling can well describe the spectral redistribution across the volume collapse, whereas the hybridization between neighboring atoms in the Hubbard model appears to play a minor role. Our study helps to constrain the theoretical models and opens a promising new route for systematic investigation of volume collapse phenomena in rare-earth materials.
