Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene.

Hybrid systems based on the combination of crystalline bulk semiconductors with 2D crystals are identified as promising heterogeneous structures for new optoelectronic applications. The direct integration of III-V semiconductors on 2D materials is very attractive to make practical devices but the preservation of the intrinsic properties of the underlying 2D materials remains a challenge. In this work, we study the direct epitaxy of self-organized GaN crystals on graphene. We demonstrate that severe metal-organic chemical vapor deposition growth conditions of GaN (chemically aggressive precursors and high temperatures) are not detrimental to the structural quality and the charge carrier mobility of the graphene base plane. Graphene can therefore be used both as an efficient sensitive material and as a substrate for GaN epitaxy to make a self-assembled UV photodetector. A responsivity as high as 2 A W-1 is measured in the UV-A range without any further postprocessing compared to simple deposition of contact electrodes. Our study opens the way to build new self-assembled 2D/III-V hybrid optoelectronic devices by direct epitaxy.

No cytotoxicity or genotoxicity of graphene and graphene oxide in murine lung epithelial FE1 cells in vitro.

Graphene and graphene oxide receive much attention these years, because they add attractive properties to a wide range of applications and products. Several studies have shown toxicological effects of other carbon-based nanomaterials such as carbon black nanoparticles and carbon nanotubes in vitro and in vivo. Here, we report in-depth physicochemical characterization of three commercial graphene materials, one graphene oxide (GO) and two reduced graphene oxides (rGO) and assess cytotoxicity and genotoxicity in the murine lung epithelial cell line FE1. The studied GO and rGO mainly consisted of 2-3 graphene layers with lateral sizes of 1-2 µm. GO had almost equimolar content of C, O, and H while the two rGO materials had lower contents of oxygen with C/O and C/H ratios of 8 and 12.8, respectively. All materials had low levels of endotoxin and low levels of inorganic impurities, which were mainly sulphur, manganese, and silicon. GO generated more ROS than the two rGO materials, but none of the graphene materials influenced cytotoxicity in terms of cell viability and cell proliferation after 24 hr. Furthermore, no genotoxicity was observed using the alkaline comet assay following 3 or 24 hr of exposure. We demonstrate that chemically pure, few-layered GO and rGO with comparable lateral size (> 1 µm) do not induce significant cytotoxicity or genotoxicity in FE1 cells at relatively high doses (5-200 µg/ml). Environ. Mol. Mutagen. 57:469-482, 2016. © 2016 The Authors. Environmental and Molecular Mutagenesis Published by Wiley Periodicals, Inc.

Doping characteristics of iodine on as-grown chemical vapor deposited graphene on Pt.

Using laboratory X-ray photoelectron emission microscopy (XPEEM), we investigated the doping efficiency and thermal stability of iodine on as-grown graphene on Pt. After iodine adsorption of graphene in saturated vapor of I2, monolayer and bilayer graphene exhibited work function of 4.93 eV and 4.87 eV, respectively. Annealing of the doped monolayer graphene at 100 °C led to desorption of hydrocarbons, which increased the work function of monolayer graphene by ~0.2 eV. The composition of the polyiodide complexes evolved upon a step-by-step annealing at temperatures from 100 °C to 300 °C while the work-function non-monotonically changed with decreasing iodine content. The iodine dopant was stable at relatively high temperature as a significant amount of iodine remained up to the annealing temperature of 350 °C.

Effective supergrowth of vertical aligned carbon nanotubes at low temperature and pressure.

We present the generalised supergrowth of single and double walled carbon nanotubes like "water assisted supergrowth" at low temperature (630 degrees C) and pressure (1 Torr) by chemical vapour deposition using various thicknesses of iron supported alumina substrate as a catalyst. Reduced temperature and low pressure synthesis of single walled (SW) and double walled (DW) carbon nanotubes is of interest for their efficient growth into device architectures. Pure SW with 2.5 nm diameter are obtained with 0.37 nm Fe catalyst at 630 degrees C. We demonstrated the decrease of the density versus temperatures and also obtained high density materials (1.4 x 10(12) cm(-2)) at low temperature (580 degrees C). Scanning and transmission electron microscope studies provided information on the height, density of the carpets and the structure and diameter of SW and DW carbon nanotubes, respectively.