Atomic-resolved depth profile of strain and cation intermixing around LaAlO3/SrTiO3 interfaces.

Novel behavior has been observed at the interface of LaAlO3/SrTiO3 heterostructures such as two dimensional metallic conductivity, magnetic scattering and superconductivity. However, both the origins and quantification of such behavior have been complicated due to an interplay of mechanical, chemical and electronic factors. Here chemical and strain profiles near the interface of LaAlO3/SrTiO3 heterostructures are correlated. Conductive and insulating samples have been processed, with thicknesses respectively above and below the commonly admitted conductivity threshold. The intermixing and structural distortions within the crystal lattice have been quantitatively measured near the interface with a depth resolution of unit cell size. A strong link between intermixing and structural distortions at such interfaces is highlighted: intermixing was more pronounced in the hetero-couple with conductive interface, whereas in-plane compressive strains extended deeper within the substrate of the hetero-couple with the insulating interface. This allows a better understanding of the interface local mechanisms leading to the conductivity.

InGaN nanowires with high InN molar fraction: growth, structural and optical properties.

The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nano-cathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 °C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.

Strain state of GaN nanodisks in AlN nanowires studied by medium energy ion spectroscopy.

Medium energy ion spectroscopy experiments have been performed on an ensemble of nanowires deposited by molecular beam epitaxy on Si(111), taking advantage of their reduced in-plane mosaicity. In particular, the strain in nanometric GaN insertions embedded in AlN sections deposited on top of GaN nanowires has been determined. The measured strain is consistent with atomistic valence force field calculations. This opens the way for the structural study of a new range of discontinuous nanowire-based nanostructures by medium energy ion spectroscopy and to the determination of the strain profile of nanodisks in nanowires at the monolayer scale.