Fully Solution-Processed Tandem White Quantum-Dot Light-Emitting Diode with an External Quantum Efficiency Exceeding 25.

Solution-processed electroluminescent tandem white quantum-dot light-emitting diodes (TWQLEDs) have the advantages of being low-cost and high-efficiency and having a wide color gamut combined with color filters, making this a promising backlight technology for high-resolution displays. However, TWQLEDs are rarely reported due to the challenge of designing device structures and the deterioration of film morphology with component layers that can be deposited from solutions. Here, we report an interconnecting layer with the optical, electrical, and mechanical properties required for fully solution-processed TWQLED. The optimized TWQLEDs exhibit a state-of-the-art current efficiency as high as 60.4 cd/A and an extremely high external quantum efficiency of 27.3% at a luminance of 100 000 cd/m2. A high color gamut of 124% NTSC 1931 standard can be achieved when combined with commercial color filters. These results represent the highest performance for solution-processed WQLEDs, unlocking the great application potential of TWQLEDs as backlights for new-generation displays.

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor.

Light-emitting field-effect transistors (LEFETs) have attained great attention due to their special characteristics of both the switching capacity and the electroluminescence capacity. However, high-performance LEFETs with high mobility, high brightness, and high efficiency have not been realized due to the difficulty in developing high electron and hole mobility materials with suitable band structures. In this paper, quantum dot hybrid LEFETs (QD-HLEFETs) combining high-luminous-efficiency quantum dots (QDs) and a solution-processed scandium-incorporated indium oxide (Sc:In2O3) semiconductor were demonstrated. The red QD-HLEFET showed high electrical and optical performance with an electron mobility of 0.8 cm2 V-1 s-1, a maximum brightness of 13 400 cd/m2, and a maximum external quantum efficiency of 8.7%. The high performance of the QD-HLEFET is attributed to the good energy band matching between Sc:In2O3 and QDs and the balanced hole and electron injection (less exciton nonradiative recombination). In addition, incorporation of Sc into In2O3 can suppress the oxygen vacancy and free carrier generation and brings about excellent current and optical modulation (the on/off current ratio is 105 and the on/off brightness ratio is 106).

Highly Efficient All-Solution Processed Inverted Quantum Dots Based Light Emitting Diodes.

In all-solution processed inverted quantum dots based light emitting diodes (QLEDs), the solvent erosion on the quantum dot (QD) layer prevents devices from reaching high performance. By employing an orthogonal solvent 1,4-dioxane for the hole transport layer (HTL) poly(9-vinlycarbazole) (PVK), the external quantum efficiencies (EQE) of red QLED is increased 4-fold, while the luminous efficiencies (LE) of blue QLED is enhanced by 25 times, compared to the previous devices' record. To further improve the device efficiency and reduce the efficiency roll-off, solution processed PVK/poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)] (TFB) double-layer HTL is introduced to facilitate hole injection with stepwise energy level. By reducing the hole injection barrier, the turn-on voltage of QLEDs decreases from 3.4 to 2.7 V for red, from 5.1 to 2.7 V for green, and from 5.3 to 4.1 V for blue. The peak LE reach 22.1 cd/A, 21.4 cd/A, and 1.99 cd/A, while the maximum EQE reach 12.7%, 5.29%, and 5.99%, for red, green, and blue QLEDs, respectively. To the best of our knowledge, the red and blue QLEDs exhibit the best device performance among all the all-solution processed inverted QLEDs. In addition, the blue QLED is the champion among all the inverted QLEDs, including the devices fabricated by thermal evaporation.

Coffee-Ring-Free Quantum Dot Thin Film Using Inkjet Printing from a Mixed-Solvent System on Modified ZnO Transport Layer for Light-Emitting Devices.

Inkjet printing has been considered an available way to achieve large size full-color RGB quantum dots LED display, and the key point is to obtain printed film with uniform and flat surface profile. In this work, mixed solvent of 20 vol % 1,2-dichlorobenzene (oDCB) with cyclohexylbenzene (CHB) was used to dissolve green quantum dots (QDs) with CdSe@ZnS/ZnS core/shell structure. Then, by inkjet printing, a flat dotlike QDs film without the coffee ring was successfully obtained on polyetherimide (PEI)-modified ZnO layer, and the printed dots array exhibited great stability and repeatability. Here, adding oDCB into CHB solutions was used to reduce surface tension, and employing ZnO nanoparticle layer with PEI-modified was used to increase the surface free energy. As a result, a small contact angle is formed, which leads to the enhancement of evaporation rate, and then the coffee ring effect was suppressed. The printed dots with flat surface profile were eventually realized. Moreover, inverted green QD-LEDs with PEI-modified ZnO film as electron transport layer (ETL) and printed green QDs film as emission layer were successfully fabricated. The QD-LEDs exhibited the maximum luminance of 12 000 cd/m2 and the peak current efficiency of 4.5 cd/A at luminance of 1500 cd/m2.