Solvent-Dependent Self-Assembly of a Pillar[5]arene-Based Poly-Pseudo-Rotaxane Linked and Threaded by Silver(I) Trifluoroacetate: A Double Role.

In the supramolecule area, the fabrication of a new concept called polyrotaxanes or poly-pseudo-rotaxanes remains challenging. We herein report the formation of a poly-pseudo-rotaxane in which the same salt-type guest serves both linking and threading in the resulting structure. The combination of A1/A2-thiopyridyl pillar[5]arene (L) and silver(I) trifluoroacetate in CHCl3/CH3OH afforded a one-dimensional (1D) poly-pseudo-rotaxane. In this structure, to our surprise, the AgCF3CO2 guest not only links the di-armed L ligands via an infinite -L-Ag-L-Ag- arrangement but also threads into a pillar[5]arene cavity in a dimer form, (AgCF3CO2)2. In contrast, the same reaction in CH2Cl2/CH3OH yielded a simple 1D coordination polymer because an included CH2Cl2 molecule in the pillar[5]arene cavity prevents the threading of the silver(I) trifluoroacetate guest. Comparative 1H- and 19F-NMR studies support the solvent-dependent poly-pseudo-rotaxane formation at a lower concentration of L.

Biocompatibility evaluation of peo-treated magnesium alloy implants placed in rabbit femur condyle notches and paravertebral muscles.

BACKGROUND: Magnesium alloys have been receiving much attention for use in biodegradable metal implants because of their excellent mechanical properties and biocompatibility. However, their rapid breakdown and low bioactivity can cause the implant to lose mechanical integrity before the bone is completely healed. Moreover, hydrogen gas released during degradation can significantly delay the tissue regeneration process. To solve the instability of magnesium alloys, Zn and Ca can be added to improve the mechanical properties and biocompatibility. One other way to improve the mechanical properties of Mg is plasma electrolytic oxidation (PEO), which provides a dense, thick ceramic-like coating on the Mg surface. In this study, high-purity Mg was selected as the control, and Mg-1wt%Zn-0.1wt%Ca alloy and PEO-treated Mg-1wt%Zn-0.1wt%Ca alloy were selected as the test materials; the results of radiographic and histological analyses of their biocompatibility are reported herein. MATERIALS AND METHOD: Nineteen New Zealand white rabbits were used in the study. Rod-bars (Ø2.7 × 13.6 mm) were placed on both paravertebral muscles, and cannulated screws (Ø2.7x10mm) were placed on both femur condyle notches. Each animal was implanted in all four sites. X-rays were taken at 0, 2, 4, 8, and 12 weeks, micro-CT, and live-CT were taken at 4, 8, and 12 weeks. At weeks 4, 8, and 12, individuals representing each group were selected and sacrificed to prepare specimens for histopathological examination. RESULT: The results confirm that in vivo, Mg-1wt%Zn-0.1wt%Ca alloy had higher corrosion resistance than high-purity Mg and safely degraded over time without causing possible side effects (foreign body or inflammatory reactions, etc.). In addition, PEO treatment of Mg-1wt%Zn-0.1wt%Ca alloy had a positive effect on fracture recovery by increasing the bonding area with bone. CONCLUSION: Our results suggest that PEO treatment of Mg-1wt%Zn-0.1wt%Ca alloy can be a promising biomaterials in the field of various clinical situations such as orthopedic and maxillofacial surgerys.

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

Effect of catalyst layer density and growth temperature in rapid atomic layer deposition of silica using tris(tert-pentoxy)silanol.

Rapid atomic layer deposition (RALD) of SiO2 thin films was achieved using trimethyl-aluminum and tris(tert-pentoxy)silanol (TPS) as the catalyst and Si precursor, respectively. A maximum growth rate as high as ∼28 nm/cycle was obtained by optimizing the catalyst layer density, whereas the previous reports showed lower values of 12 to 17 nm/cycle [Hausmann et al. Science2002, 298, 402-406; Burton et al. Chem. Mater. 2008, 20, 7031-7043]. When the growth temperature was increased from 140 to 230 °C, the growth rate was not much reduced and the TPS pulse time showing a saturated growth rate became rather longer. Si-CH3, Si-OH, and Si-H bonds were not detected in infrared spectra from the RALD SiO2 film grown at 230 °C. The film quality could be enhanced substantially by applying a higher growth temperature and an in situ post plasma treatment process.