Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach.

One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS2) monolayer-based devices in which the molybdenum disulfide (MoS2) monolayer is placed only in the contact area of the FET, creating an Au/MoS2/WS2 junction, which effectively reduces contact resistance by over 60% and improves the Ion/Ioff ratio 10 times in comparison to WS2-based devices without MoS2 under-contact interlayer. The enhancement in the device operation arises from the FLP effect occurring only at the interface between the metal and the first layer of the MoS2/WS2 heterostructure. This results in favorable band alignment, which enhances the current flow through the junction. To ensure the reproducibility of our devices, we systematically analyzed 160 FET devices fabricated with under-contact interlayer and without it. Statistical analysis shows a consistent improvement in the operation of the device and reveals the impact of contact resistance on key FET performance indicators.

Realization of unpinned two-dimensional dirac states in antimony atomic layers.

Two-dimensional (2D) Dirac states with linear dispersion have been observed in graphene and on the surface of topological insulators. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at [Formula: see text] in topological insulators Bi2Se(Te)3 and Dirac cones at K and [Formula: see text] points in graphene. The low-energy dispersion of those Dirac states are isotropic due to the constraints of crystal symmetries. In this work, we report the observation of novel 2D Dirac states in antimony atomic layers with phosphorene structure. The Dirac states in the antimony films are located at generic momentum points. This unpinned nature enables versatile ways such as lattice strains to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points are highly anisotropic due to the reduced symmetry of generic momentum points. The exotic properties of unpinned Dirac states make antimony atomic layers a new type of 2D Dirac semimetals that are distinct from graphene.

Two-Dimensional Crystals as a Buffer Layer for High Work Function Applications: The Case of Monolayer MoO3.

We propose that the crystallinity of two-dimensional (2D) materials is a crucial factor for achieving highly effective work function (WF) modification. A crystalline 2D MoO3 monolayer enhances substrate WF up to 6.4 eV for thicknesses as low as 0.7 nm. Such a high WF makes 2D MoO3 a great candidate for tuning properties of anode materials and for the future design of organic electronic devices, where accurate evaluation of the WF is crucial. We provide a detailed investigation of WF of 2D α-MoO3 directly grown on highly ordered pyrolytic graphite, by means of Kelvin probe force microscopy (KPFM) and ultraviolet photoemission spectroscopy (UPS). This study underlines the importance of a controlled environment and the resulting crystallinity to achieve high WF in MoO3. UPS is proved to be suitable for determining higher WF attributed to 2D islands on a substrate with lower WF, yet only in particular cases of sufficient coverage. KPFM remains a method of choice for nanoscale investigations, especially when conducted under ultrahigh vacuum conditions. Our experimental results are supported by density functional theory calculations of electrostatic potential, which indicate that oxygen vacancies result in anisotropy of WF at the sides of the MoO3 monolayer. These novel insights into the electronic properties of 2D-MoO3 are promising for the design of electronic devices with high WF monolayer films, preserving the transparency and flexibility of the systems.

Unraveling the Mechanism of the 150-Fold Photocurrent Enhancement in Plasma-Treated 2D TMDs.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are increasingly investigated for applications such as optoelectronic memories, artificial neurons, sensors, and others that require storing photogenerated signals for an extended period. In this work, we report an environment- and gate voltage-dependent photocurrent modulation method of TMD monolayer-based devices (WS2 and MoS2). To achieve this, we introduce structural defects using mild argon-oxygen plasma treatment. The treatment leads to an extraordinary over 150-fold enhancement of the photocurrent in vacuum along with an increase in the relaxation time. A significant environmental and electrostatic dependence of the photocurrent signal is observed. We claim that the effect is a combined result of atomic vacancy introduction and oxide formation, strengthened by optimal wavelength choice for the modified surface. We believe that this work contributes to paving the way for tunable 2D TMD optoelectronic applications.

Raman Optical Activity of 1T-TaS2.

Measurements of optical activity can be readily performed in transparent matter by means of a rotation of transmitted light polarization. In the case of opaque bulk materials, such measurements cannot be performed, making it difficult to assess possible chiral properties. In this work, we present full angular polarization dependencies of the Raman modes of bulk 1T-TaS2, which has recently been suggested to have chiral properties after pulsed laser excitation. We found that a mechanical rotation of the sample does not alter polarization-resolved Raman spectra, which can only be explained by introducing an antisymmetric Raman tensor, frequently used to describe Raman optical activity (ROA). Raman spectra obtained under circularly polarized excitation demonstrate that 1T-TaS2 indeed shows ROA, providing strong evidence that 1T-TaS2 is chiral under the used conditions of laser excitation. Our results suggest that ROA may be used as a universal tool to study chiral properties of quantum materials.

Antimony oxide nanostructures in the monolayer limit: self-assembly of van der Waals-bonded molecular building blocks.

Antimony oxide nanostructures have been identified as candidates for a range of electronic and optoelectronic applications. Here we demonstrate the growth of 2-dimensional antimony oxide nanostructures on various substrates, including highly oriented pyrolytic graphite (HOPG), MoS2 and α-Bi(110) nanoislands. Using scanning tunneling microscopy (STM) we show that the nanostructures formed are exclusively highly crystalline α-Sb2O3(111) monolayers with a lattice constant of 796 pm ± 7 pm. The nanostructures are triangular with lateral dimensions of up to ∼30 nm. Even though elemental antimony nanostructures are grown simultaneously mixed phases are not observed and both materials exhibit their own distinct growth modes. Moiré patterns are also observed and simulated, allowing confirmation of the atomic unit cell and an understanding of the orientation of the Sb2O3 structures with respect to the supporting materials. As in the bulk, the Sb2O3 nanostructures are formed from Sb4O6 molecules that are weakly interacting through van der Waals forces. This allows physical modification of the nanostructures with the STM tip. Scanning tunnelling spectroscopy reveals a wide band gap of at least 3.5 eV. Finally, we show that possible alternative structures that have unit cells comparable to those observed can be excluded based on our DFT calculations. The considered structures are a 2 × 2 reconstruction of ß-Sb with one vacancy per unit cell and a van der Waals solid composed of Sb4 clusters. Previous reports have predominantly demonstrated Sb2O3 structures with much larger thicknesses.

Realization of Symmetry-Enforced Two-Dimensional Dirac Fermions in Nonsymmorphic α-Bismuthene.

Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and nontrivial Berry phase play a pivotal role in the electronic, optical, mechanical, and chemical properties of 2D Dirac materials. The known 2D Dirac materials are gapless only within certain approximations, for example, in the absence of spin-orbit coupling (SOC). Here, we report a route to establishing robust Dirac cones in 2D materials with nonsymmorphic crystal lattice. The nonsymmorphic symmetry enforces Dirac-like band dispersions around certain high-symmetry momenta in the presence of SOC. Through µ-ARPES measurements, we observe Dirac-like band dispersions in α-bismuthene. The nonsymmorphic lattice symmetry is confirmed by µ-low-energy electron diffraction and scanning tunneling microscopy. Our first-principles simulations and theoretical topological analysis demonstrate the correspondence between nonsymmorphic symmetry and Dirac states. This mechanism can be straightforwardly generalized to other nonsymmorphic materials. The results enlighten the search of symmetry-enforced Dirac fermions in the vast uncharted world of nonsymmorphic 2D materials.