Oxidation of the silicon terminated (1 0 0) diamond surface.

The oxidation of the silicon terminated (1 0 0) diamond surface is investigated with a combination of high resolution photoelectron spectroscopy, low energy electron diffraction and near edge x-ray absorption fine structure spectroscopy. The effects of molecular [Formula: see text] and [Formula: see text] dosing under UHV conditions, as well as exposure to ambient conditions, have been explored. Our findings indicate that the choice of oxidant has little influence over the resulting surface chemistry, and we attribute approximately 85% of the surface oxygen to a peroxide-bridging arrangement. Additionally, oxidation does not alter the silicon-carbon bonding at the surface and therefore the [Formula: see text] reconstruction is still present.

The surface electronic structure of silicon terminated (100) diamond.

A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ± 0.1 eV.