Enhancement of Cu2ZnSn(S, Se)4 device performance using an IPA/MOE hybrid solvent system in ambient air.

In this work, a mixed precursor solvent system comprising isopropyl alcohol (IPA) and 2-methoxy ethanol (MOE) is introduced for the fabrication of Cu2ZnSn(S, Se)4 (CZTSSe) thin films under ambient conditions. The effects of different IPA/(MOE + IPA) ratios on the characteristics of CZTSSe films and the corresponding devices were investigated. Our research results indicate that the addition of IPA enhances the wettability of Cu-Zn-Sn-S precursor solution on the substrate, reduces Sn loss in the film during high-temperature annealing, and diminishes band tail states. Additionally, adding IPA leads to effective enlargement of grain size, improved crystallinity, and enhanced light absorption. However, excessive content of IPA negatively impacts CZTSSe film properties and the device's performance. Notably, when substituting 20% of MOE with IPA, the short-circuit current density (JSC) increased from 30.84 mA cm-2 to 35.55 mA cm-2 in the resulting CZTSSe device, and the efficiency improved from 9.19% to 10.63%. This work provides a new method of a solvent system for preparing efficient kesterite-based solar cells.

A study on the Si1-xGex gradual buffer layer of III-V/Si multi-junction solar cells based on first-principles calculations.

III-V/Si multi-junction solar cells have been widely studied in recent years due to their excellent theoretical efficiency (∼42%). In order to solve the problem of lattice mismatch between Si and III-V compounds of III-V/Si solar cells, different hexagonal Si1-xGex buffer layer models on the surface of hexagonal diamond Si(001) were built, and the structural, electronic and optical properties of the proposed models were calculated based on first principles calculations. The results showed that all models of the designed buffer layer could effectively reduce the lattice mismatch, and the buffer layer hex-Si1-xGex (x = 0, 0.75, and 1) is the ideal model and has achieved the best lattice-matching improvement with high defect formation energy, as well as direct band gap properties and a larger light adsorption coefficient. These theoretical models, with their analyzed properties, could offer a promising pathway toward realizing high efficiency and low cost III-V/Si multi-junction solar cells.

Organic Upconversion Display with an over 100% Photon-to-photon Upconversion Efficiency and a Simple Pixelless Device Structure.

Compared to traditional near-infrared (NIR) imaging devices, NIR-to-visible upconversion displays, which integrated a NIR photodetector with a visible light-emitting diode, have merits of simple device structure, low cost, high resolution, and a simple pixelless structure. However, photon-to-photon upconversion efficiencies of these devices are typically much lower than unity. Here we report an all-organic NIR-to-visible upconversion display with a photon-to-photon upconversion efficiency higher than 100% by integrating a photomultiplying organic NIR photodetector with a high-efficiency thermally activated delayed fluorescent organic light-emitting diode. To the best of our knowledge, this is the first report showing a photon-to-photon upconversion efficiency over 100% without using a built-in transistor for current amplification.

Electronic Level Alignment at an Indium Tin Oxide/PbI2 Interface and Its Applications for Organic Electronic Devices.

The electronic level alignment at the indium tin oxide (ITO)/PbI2 interface is investigated by an ultraviolet photoelectron spectroscopy. An n-type conductivity property is found for PbI2 as well as a downward shift energy level at the ITO/PbI2 interface. These indicate that PbI2 can be used as an anode buffer layer for organic electronic devices. The power conversion efficiency of the organic solar cell based on tetraphenyldibenzoperiflanthene/C70 planar heterojunction is dramatically increased from 1.05 to 3.82%. Meanwhile, the thermally activated delayed fluorescence organic light-emitting diode based on 4,4',4″-tri( N-carbazolyl)triphenylamine-((1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) shows a significantly reduced turn-on voltage and enhanced power efficiency from 6.26 to 18.60 lm/W. The improved performance is attributed to the high hole injection/extraction efficiency at the ITO/PbI2 interface. Besides, the near-infrared (NIR) absorption of lead phthalocyanine (PbPc)-based NIR organic photodetector (NIR-OPD) is dramatically increased, indicating that the PbI2 layer can also be used as a template layer for the growth of the triclinic phase of PbPc. As a result, the optimized device shows an external quantum efficiency of 26.7% and a detectivity of 9.96 × 1011 jones at 900 nm, which are among the highest ones reported for organic NIR-OPDs.

Highly efficient organic tandem solar cell with a SubPc interlayer based on TAPC:C70 bulk heterojunction.

We report a small molecule tandem organic photovoltaic (OPV) cell with a high power conversion efficiency (PCE) of 7.27%. This cell contains two subcells with an identical mixed active layer of C70:5 wt%TAPC (1,1-bis-(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane). The performance was dramatically improved by simply inserting a thin boron subphthalocyanine chloride (SubPc) interlayer, which results in an increase of the short-circuit current and open-circuit voltage as well as a decrease of the series resistance of the tandem cell. The response of the cell only contributed from the absorption of C70. The high PCE was attributed to the high absorption efficiency of C70 and improved holes extraction efficiency at the anode due to the band bending occurs at both MoO3/SubPc and SubPc/C70:5 wt%TAPC interfaces.