RÉSUMÉ
This study explored the structural characteristics, mechanical properties, and oxidation behavior of W-enriched TaWSiN films prepared through co-sputtering. The atomic ratios [W/(W + Ta)] of the as-deposited films maintained a range of 0.77-0.81. The TaWSiN films with a Si content of 0-13 at.% were crystalline, whereas the film with 20 at.% Si was amorphous. The hardness and Young's modulus of crystalline TaWSiN films maintained high levels of 26.5-29.9 GPa and 286-381 GPa, respectively, whereas the hardness and Young's modulus of the amorphous Ta7W33Si20N40 films exhibited low levels of 18.2 and 229 GPa, respectively. The oxidation behavior of TaWSiN films was investigated after annealing at 600 °C in a 1%O2-Ar atmosphere, and cone-like Ta0.3W0.7O2.85 oxides formed and extruded from the TaWSiN films.