Feasibility of Monitoring Tissue Properties During Microcirculation Disorder Using a Compact Fiber-Based Probe With Sapphire Tip.

One of the urgent tasks of modern medicine is to detect microcirculation disorder during surgery to avoid possible consequences like tissue hypoxia, ischemia, and necrosis. To address this issue, in this article, we propose a compact probe with sapphire tip and optical sensing based on the principle of spatially resolved diffuse reflectance analysis. It allows for intraoperative measurement of tissue effective attenuation coefficient and its alteration during the changes of tissue condition, caused by microcirculation disorder. The results of experimental studies using (1) a tissue-mimicking phantom based on lipid emulsion and hemoglobin and (2) a model of hindlimb ischemia performed in a rat demonstrated the ability to detect rapid changes of tissue attenuation confirming the feasibility of the probe to sense the stressful exposure. Due to a compact design of the probe, it could be useful for rather wide surgical operations and diagnostic purposes as an auxiliary instrument.

Electrochemical sensor based on Cu2-xS/graphene heterostructures for sub-picomolar dopamine detection.

Detecting dopamine (DA) in biological samples is vital to understand its crucial role in numerous physiological processes, such as motion, cognition, and reward stimulus. In this work, p-type graphene on sapphire, synthesized via chemical vapor deposition, serves as substrate for the preparation of p-type Cu2-xS films through solid-phase sulfurization. The optimized Cu2-xS/graphene heterostructure, prepared at 250 °C using a 15-nm copper film sulfurized for 2 h, exhibits superior electron transfer performance, ideal for electrochemical sensing. It is confirmed that the spontaneous charge transfer from graphene to Cu2-xS, higher Cu(II)/Cu(I) ratio (~ 0.8), and the presence of well-defined nanocrystalline structures with an average size of ~ 35 nm in Cu2-xS significantly contribute to the improved electron transfer of the heterostructure. The electrochemical sensor based on Cu2-xS/graphene heterostructure demonstrates remarkable sensitivity towards DA, with a detection limit as low as 100 fM and a dynamic range greater than 109 from 100 fM to 100 µM. Additionally, it exhibits excellent selectivity even in the presence of uric acid and ascorbic acid 100 times higher, alongside notable storage and measurement stability and repeatability. Impressively, the sensor also proves capable of detecting DA concentrations as low as 100 pM in rat serum, showcasing its potential for clinically relevant analytes and promising applications in sensitive, selective, reliable, and efficient point-of-care diagnostics.

Characterization of ultrasonic vibration and polishing force in sapphire ultrasonic vibration-assisted flexible polishing: Insights from in-situ monitoring systems.

Sapphire ultrasonic vibration-assisted flexible polishing (UVAFP) is a promising technique for comprehensively improving the surface integrity of machined parts. The technique was performed on an ultra-precision machine tool with the in-situ monitoring systems in this paper, which aims to provide a new perspective for understanding the material removal mechanisms in the sapphire UVAFP process. A Taguchi L9 (43) orthogonal experiment was conducted to investigate the effects of feed distance, spindle speed, ultrasonic vibration (UV), and polishing time on the surface finish and material removal in the process. In addition, the effect of a polyurethane ball tool is not trivial. A single-factor experiment was conducted for exploring it. Based on a laser displacement measurement system and an acoustic emission sensor system, the characteristics of time-dependent ultrasonic amplitude and ultrasonic frequency for the sapphire UVAFP system were analyzed, with the effectiveness of UV demonstrated. Based on a three-component force measurement system, the characteristics of normal force and its relationship with process parameters and tool deformation were analyzed, with macro- and micro-level examined. In conclusion, this paper presents the characterization of UV and polishing force in the sapphire UVAFP process, providing novel insights into understanding the material removal mechanisms of sapphire and even more manufacturing problems.

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals.

Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer-scale single-crystal films. Both step-edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic-edge guided epitaxy and van der Waals epitaxy. Low-concentration sulfur condition preserves O/Al-terminated step edges, fostering atomic-edge epitaxy, while high-concentration sulfur leads to S-terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic-level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single-crystal 2D materials on a wafer scale.

Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications.

Sapphire has various applications in photonics due to its broadband transparency, high-contrast index, and chemical and physical stability. Photonics integration on the sapphire platform has been proposed, along with potentially high-performance lasers made of group III-V materials. In parallel with developing active devices for photonics integration applications, in this work, silicon nitride optical waveguides on a sapphire substrate were analyzed using the commercial software Comsol Multiphysics in a spectral window of 800~2400 nm, covering the operating wavelengths of III-V lasers, which could be monolithically or hybridly integrated on the same substrate. A high confinement factor of ~90% near the single-mode limit was obtained, and a low bending loss of ~0.01 dB was effectively achieved with the bending radius reaching 90 µm, 70 µm, and 40 µm for wavelengths of 2000 nm, 1550 nm, and 850 nm, respectively. Furthermore, the use of a pedestal structure or a SiO2 bottom cladding layer has shown potential to further reduce bending losses. The introduction of a SiO2 bottom cladding layer effectively eliminates the influence of the substrate's larger refractive index, resulting in further improvement in waveguide performance. The platform enables tightly built waveguides and small bending radii with high field confinement and low propagation losses, showcasing silicon nitride waveguides on sapphire as promising passive components for the development of high-performance and cost-effective PICs.

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric.

The application of GaN HEMTs on silicon substrates in high-voltage environments is significantly limited due to their complex buffer layer structure and the difficulty in controlling wafer warpage. In this work, we successfully fabricated GaN power HEMTs on 6-inch sapphire substrates using a CMOS-compatible process. A 1.5 µm thin GaN buffer layer with excellent uniformity and a 20 nm in situ SiN gate dielectric ensured uniformly distributed VTH and RON across the entire 6-inch wafer. The fabricated devices with an LGD of 30 µm and WG of 36 mm exhibited an RON of 18.06 Ω·mm and an off-state breakdown voltage of over 3 kV. The electrical mapping visualizes the high uniformity of RON and VTH distributed across the whole 6-inch wafer, which is of great significance in promoting the applications of GaN power HEMTs for medium-voltage power electronics in the future.

Numerical and Experiment Analysis of Sapphire Sandwich-Structure Fabry-Perot Pressure Sensor through Fast Fourier Transform and Mean Square Error Demodulation Algorithm.

Pressure sensors prepared from sapphire exhibit excellent characteristics, including high-temperature resistance, high hardness, and resistance to electromagnetic interference. A Fast Fourier Transform and Mean Square Error (FFT-MSE) demodulation algorithm was employed to demodulate a sapphire sandwich-structure Fabry-Perot (F-P) pressure sensor. Through simulation analysis, the experimental results indicated that the demodulation error of the air cavity length in the range of 206 µm to 216 µm was less than 0.0008%. Compared to single demodulation methods and combined demodulation methods based on FFT or Minimum Mean Square Error (MMSE), the method proposed in this work reduced the demodulation error by more than three times and increased accuracy by more than six times. The algorithm was utilized to demodulate the sapphire sandwich-structure F-P pressure sensor, and the test results indicated that the fitting error of the sensor was less than 0.025% within the pressure range of 0 MPa to 10 MPa. The repeatability error was less than 0.066%, the zero-point deviation was 1.26%, and the maximum stability deviation was 0.0063% per 30 min. The algorithm effectively demodulated the actual cavity length variation in the sapphire sandwich-structure F-P pressure sensor, providing a solution for the performance evaluation of the sapphire sandwich-structure F-P pressure sensor.

Modeling of Material Removal Rate for the Fixed-Abrasive Double-Sided Planetary Grinding of a Sapphire Substrate.

Double-sided planetary grinding (DSPG) with a fixed abrasive is widely used in sapphire substrate processing. Compared with conventional free abrasive grinding, it has the advantages of high precision, high efficiency, and environmental protection. In this study, we propose a material removal rate (MRR) model specific to the fixed-abrasive DSPG process for sapphire substrates, grounded in the trajectory length of abrasive particles. In this paper, the material removal rate model is obtained after focusing on the theoretical analysis of the effective number of abrasive grains, the indentation depth of a single abrasive grain, the length of the abrasive grain trajectory, and the groove repetition rate. To validate this model, experiments were conducted on sapphire substrates using a DSPG machine. Theoretical predictions of the material removal rate were then juxtaposed with experimental outcomes across varying grinding pressures and rotational speeds. The trends between theoretical and experimental values showed remarkable consistency, with deviations ranging between 0.2% and 39.2%, thereby substantiating the model's validity. Moreover, leveraging the insights from this model, we optimized the disparity in the material removal rate between two surfaces of the substrate, thereby enhancing the uniformity of the machining process across both surfaces.

Specially Structured AgCuTi Foil Enables High-Strength and Defect-Free Brazing of Sapphire and Ti6Al4V Alloys: The Microstructure and Fracture Characteristics.

A novel AgCuTi brazing foil with a unique microstructure was developed, which could achieve strong vacuum brazing of Ti6Al4V (TC4) and sapphire. The brazing foil was composed of Ag solid solution (Ag(s,s)), Cu solid solution (Cu(s,s)), and layered Ti-rich phases, and had a low liquidus temperature of 790 °C and a narrow melting range of 16 °C, facilitating the defect-free joining of TC4 and sapphire. The sapphire/TC4 joint fabricated by using this novel AgCuTi brazing foil exhibited an outstanding average shear strength of up to 132.2 MPa, which was the highest value ever reported. The sapphire/TC4 joint had a characteristic structure, featuring a brazing seam reinforced by TiCu particles and a thin Ti3(Cu,Al)3O reaction layer of about 1.3 µm. The fracture mechanism of the sapphire/TC4 joint was revealed. The crack originated at the brazing seam with TiCu particles, then propagated through the Ti3(Cu,Al)3O reaction layer, detached the reaction layer from the sapphire, and finally penetrated into the sapphire. This study offers valuable insights into the design of active brazing alloys and reliable metal-ceramic bonding.

Comparison of the efficacy and safety of a 730-nm picosecond titanium sapphire laser and a 1064-nm picosecond neodymium yttrium aluminum garnet laser for the treatment of acquired bilateral nevus of Ota-like macules: A split-face, evaluator-blinded, randomized, and controlled pilot trial.

BACKGROUND: The picosecond neodymium yttrium aluminum garnet laser (PNYL) has been successfully used in treating acquired bilateral nevus of Ota-like macules (ABNOM). The 730-nm picosecond titanium sapphire laser (PTSL) is an emerging tool for pigmentary disorders. However, no studies have compared two different wavelengths of picosecond laser for the treatment of ABNOM. AIMS: To compare the efficacy and safety of the 730-nm PTSL with the 1064-nm PNYL in the treatment of ABNOM. METHODS: Fifteen participants with ABNOM were randomized to undergo a single session of either the 730-nm PTSL on one side of the face and 1064-nm PNYL on the other side. Efficacy and safety assessments were performed by blinded visual evaluations at baseline, 12 weeks, and 24 weeks posttreatment. Participants' satisfaction and adverse effects were recorded. RESULTS: Compared to baseline, The 730-nm PTSL-treated side showed better improvement than that of the 1064-nm PNYL-treated side at 24 weeks posttreatment (1.67 ± 1.047 vs. 0.87 ± 0.640, p = 0.027). There were no significant differences in pain sensation and participants' satisfaction between the two laser treatments. CONCLUSIONS: The 730-nm PTSL is more effective than the 1064-nm PNYL in the treatment of ABNOM.