Recent advances in multifunctional electromagnetic interference shielding materials.

Electromagnetic interference (EMI) shielding material is the most effective solution to protect electronic devices and human health from the harmful effects of electromagnetic radiation. The study of EMI shielding materials is intensifying in the constantly developing picture of the fourth industrial revolution. Many EMI shielding materials based on metal, carbon, emerging MXene materials, and their composites have been discovered to utilize the EMI shielding performance. However, a huge demand for compact and multi-functional devices requires the integration of new functions into EMI shielding materials. Multifunctional EMI shielding materials perform multiple functions beyond their main function of EMI shielding in a system due to their specific properties. The additional functions can either naturally exist or be specially engineered. This review summarizes the recent progress of cutting-edge multifunctional EMI shielding materials. The possibility of combining multifunction EMI shielding materials, such as strain sensing, humidity sensing, temperature sensing, thermal management, etc., and the difficulties in balancing EMI shielding performance with other functions are also discussed. Lastly, we point out challenges and propose future directions to develop research on multifunctional EMI shielding materials.

Assessment of the 50 % and 95 % effective paratracheal forces for occluding the esophagus in anesthetized patients.

This study aimed to evaluate the 50% and 95% effective paratracheal forces for occluding the esophagus in anesthetized patients. In 46 anesthetized patients, the upper esophagus was examined using ultrasonography, and the lower paratracheal area over the esophagus just above the clavicle was marked. Manual paratracheal force was applied over that area using a novel pressure sensing device set-up. In the first patient, a 20 N paratracheal force was applied, and the patency of the esophagus was assessed by advancing the esophageal stethoscope. Unsuccessful advancement of the esophageal stethoscope was considered an effective paratracheal force. If advancement of the esophageal stethoscope was successful, the paratracheal force was increased by 2 N for the next patient, and if it was unsuccessful, the force was decreased by 2 N for the next patient. These sequential tests were performed using 12- and 18-Fr esophageal stethoscopes, respectively. According to Dixon and Mood method, the 50% effective paratracheal force (confidence interval) was 18.4 (17.5‒19.3) N with the use of a 12-Fr esophageal stethoscope and 12.8 (11.0‒14.6) N with the use of an 18-Fr esophageal stethoscope. Using probit regression analysis, the 50% and 95% effective paratracheal forces were 18.4 (16.8‒19.6) N and 20.6 (19.4‒27.9) N, respectively, with the use of a 12-Fr esophageal stethoscope, and 12.4 (8.3‒14.4) N and 16.9 (14.7‒37.3) N, respectively, with the use of an 18-Fr esophageal stethoscope. Our findings suggest a guide for applying paratracheal force during rapid sequence induction and tracheal intubation.

Surface Plasmon Resonance-Enhanced Near-Infrared Absorption in Single-Layer MoS2 with Vertically Aligned Nanoflakes.

The development of MoS2 with two- or three-dimensional heterostructures can provide a significant breakthrough for the enhancement of photodetection abilities such as increase in light absorption and expanding the detection ranges. Till date, although the synthesis of a MoS2 layer with three-dimensional nanostructures using a chemical vapor deposition (CVD) process has been successfully demonstrated, most studies have concentrated on electrochemical applications that utilize structural strengths, for example, a large specific surface area and electrochemically active sites. Here, for the first time, we report spectral light absorption induced by plasmon resonances in single-layer MoS2 (SL-MoS2) with vertically aligned nanoflakes grown by a CVD process. Treatment with oxygen plasma results in the formation of a substoichiometric phase of MoOx in the vertical nanoflakes, which exhibit a high electron density of 4.5 × 1013 cm-2. The substoichiometric MoOx with a high electron-doping level that is locally present on the SL-MoS2 surface induces an absorption band in the near-infrared (NIR) wavelength range of 1000-1750 nm because of the plasmon resonances. Finally, we demonstrate the enhancement of photodetection ability by broadening the detection range from the visible region to the NIR region in oxygen-treated SL-MoS2 with vertically aligned nanoflakes.

Honeycomb-like MoS2 Nanotube Array-Based Wearable Sensors for Noninvasive Detection of Human Skin Moisture.

Technological advances in wearable electronics have driven the necessity of a highly sensitive humidity sensor that can precisely detect physiological signals from the human body in real time. Herein, we introduce the anodic aluminum oxide (AAO)-assisted MoS2 honeycomb structure as a resistive humidity sensor with superior sensing performance. The unique honeycomb-like structure consists of MoS2 nanotubes, which can amplify the sensing performance because of their open pores and wider surface absorption sites. The formation of uniform MoS2 nanotubes inside the AAO membrane was manipulated by the number of vacuum filtration cycles of the (NH4)2MoS4 solution. The proposed humidity sensor exhibits an elevated sensitivity that is 2 orders of magnitudes higher than the MoS2 film-based humidity sensor at the relative humidity range of 20-85%. Moreover, the sensor showed significantly faster response and recovery times of 0.47 and 0.81 s. In addition, we demonstrate the multifunctional applications such as noncontact sensation of human fingertips, human breath, speech recognition, and regional sweat rate, which show its promising potential for the next-generation wearable sensors.

Highly Sensitive and Flexible Strain-Pressure Sensors with Cracked Paddy-Shaped MoS2/Graphene Foam/Ecoflex Hybrid Nanostructures.

Three-dimensional graphene porous networks (GPNs) have received considerable attention as a nanomaterial for wearable touch sensor applications because of their outstanding electrical conductivity and mechanical stability. Herein, we demonstrate a strain-pressure sensor with high sensitivity and durability by combining molybdenum disulfide (MoS2) and Ecoflex with a GPN. The planar sheets of MoS2 bonded to the GPN were conformally arranged with a cracked paddy shape, and the MoS2 nanoflakes were formed on the planar sheet. The size and density of the MoS2 nanoflakes were gradually increased by raising the concentration of (NH4)2MoS4. We found that this conformal nanostructure of MoS2 on the GPN surface can produce improved resistance variation against external strain and pressure. Consequently, our MoS2/GPN/Ecoflex sensors exhibited noticeably improved sensitivity compared to previously reported GPN/polydimethylsiloxane sensors in a pressure test because of the existence of the conformal planar sheet of MoS2. In particular, the MoS2/GPN/Ecoflex sensor showed a high sensitivity of 6.06 kPa-1 at a (NH4)2MoS4 content of 1.25 wt %. At the same time, it displayed excellent durability even under repeated loading-unloading pressure and bending over 4000 cycles. When the sensor was attached on a human temple and neck, it worked correctly as a drowsiness detector in response to motion signals such as neck bending and eye blinking. Finally, a 3 × 3 tactile sensor array showed precise touch sensing capability with complete isolation of electrodes from each other for application to touch electronic applications.

High Durability and Waterproofing rGO/SWCNT-Fabric-Based Multifunctional Sensors for Human-Motion Detection.

Wearable strain-pressure sensors for detecting electrical signals generated by human activities are being widely investigated because of their diverse potential applications, from observing human motion to health monitoring. In this study, we fabricated reduced graphene oxide (rGO)/single-wall carbon nanotube (SWCNT) hybrid fabric-based strain-pressure sensors using a simple solution process. The structural and chemical properties of the rGO/SWCNT fabrics were characterized using scanning electron microscopy (SEM), Raman, and X-ray photoelectron spectroscopy (XPS). Complex networks containing rGO and SWCNTs were homogeneously formed on the cotton fabric. The sensing performance of the devices was evaluated by measuring the effects of bending strain and pressure. When the CNT content was increased, the change in relative resistance decreased, while durability was significantly improved. The rGO/SWCNT (0.04 wt %) fabric sensor showed particularly high mechanical stability and flexibility during 100 000 bending tests at the extremely small bending radius of 3.5 mm (11.6% bending strain). Moreover, the rGO/SWCNT fabric device exhibited excellent water resistant properties after 10 washing tests due to its hydrophobic nature. Finally, we demonstrated a fabric-sensor-based motion glove and confirmed its practical applicability.

Layer number identification of CVD-grown multilayer graphene using Si peak analysis.

Since the successful exfoliation of graphene, various methodologies have been developed to identify the number of layers of exfoliated graphene. The optical contrast, Raman G-peak intensity, and 2D-peak line-shape are currently widely used as the first level of inspection for graphene samples. Although the combination analysis of G- and 2D-peaks is powerful for exfoliated graphene samples, its use is limited in chemical vapor deposition (CVD)-grown graphene because CVD-grown graphene consists of various domains with randomly rotated crystallographic axes between layers, which makes the G- and 2D-peaks analysis difficult for use in number identification. We report herein that the Raman Si-peak intensity can be a universal measure for the number identification of multilayered graphene. We synthesized a few-layered graphene via the CVD method and performed Raman spectroscopy. Moreover, we measured the Si-peak intensities from various individual graphene domains and correlated them with the corresponding layer numbers. We then compared the normalized Si-peak intensity of the CVD-grown multilayer graphene with the exfoliated multilayer graphene as a reference and successfully identified the layer number of the CVD-grown graphene. We believe that this Si-peak analysis can be further applied to various 2-dimensional (2D) materials prepared by both exfoliation and chemical growth.

Gas molecule sensing of van der Waals tunnel field effect transistors.

van der Waals (vdW) heterostructures with two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) allow us to demonstrate atomically thin field-effect transistors (FETs), photodetectors (PDs) and photovoltaic devices capable of higher performance and greater stability levels than conventional devices. Although there have been studies of gas molecule sensing with 2D crystal channels, vdW heterostructures based on 2D crystals have not been employed thus far. Here, utilizing graphene/WS2/graphene (G/WS2/G) vdW heterostructure tunnel FETs, we demonstrate the rectification behavior of the sensitivity signal by tuning the WS2 potential barriers as a function of the gas molecule concentration and devise a fingerprint map of the sensitivity variation corresponding to an individual ratio of two different molecules in a gas mixture. Because the separation of different gas molecule concentrations from gas mixtures is in high demand in the gas-sensing research field, this result will greatly assist in the progress on selective gas sensing.

Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes.

Carrier multiplication (i.e. generation of multiple electron-hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler's law for photoemission on metals. The Fowler's law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity-both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting.

Charge transport-driven selective oxidation of graphene.

Due to the tunability of the physical, electrical, and optical characteristics of graphene, precisely controlling graphene oxidation is of great importance for potential applications of graphene-based electronics. Here, we demonstrate a facile and precise way for graphene oxidation controlled by photoexcited charge transfer depending on the substrate and bias voltage. It is observed that graphene on TiO2 is easily oxidized under UV-ozone treatment, while graphene on SiO2 remains unchanged. The mechanism for the selective oxidation of graphene on TiO2 is associated with charge transfer from the TiO2 to the graphene. Raman spectra were used to investigate the graphene following applied bias voltages on the graphene/TiO2 diode under UV-ozone exposure. We found that under a reverse bias of 0.6 V on the graphene/TiO2 diode, graphene oxidation was accelerated under UV-ozone exposure, thus confirming the role of charge transfer between the graphene and the TiO2 that results in the selective oxidation of the graphene. The selective oxidation of graphene can be utilized for the precise, nanoscale patterning of the graphene oxide and locally patterned chemical doping, finally leading to the feasibility and expansion of a variety of graphene-based applications.

Facile fabrication of properties-controllable graphene sheet.

Graphene has been received a considerable amount of attention as a transparent conducting electrode (TCE) which may be able to replace indium tin oxide (ITO) to overcome the significant weakness of the poor flexibility of ITO. Given that graphene is the thinnest 2-dimensional (2D) material known, it shows extremely high flexibility, and its lateral periodic honeycomb structure of sp(2)-bonded carbon atoms enables ~2.3% of incident light absorption per layer. However, there is a trade-off between the electrical resistance and the optical transmittance, and the fixed absorption rate in graphene limits is use when fabricating devices. Therefore, a more efficient method which continuously controls the optical and electrical properties of graphene is needed. Here, we introduce a method which controls the optical transmittance and the electrical resistance of graphene through various thicknesses of the top Cu layers with a Cu/Ni metal catalyst structure used to fabricate a planar mesh pattern of single and multi-layer graphene. We exhibit a continuous transmittance change from 85% (MLG) to 97.6% (SLG) at an incident light wavelength of 550 nm on graphene samples simultaneously grown in a CVD quartz tube. We also investigate the relationships between the sheet resistances.

Reflection-type spatial amplitude modulation of visible light based on a sub-wavelength plasmonic absorber.

We present a method for reflection-type spatial amplitude modulation using a sub-wavelength plasmonic absorber structure that can operate in the visible region. We utilize a pixelated array of absorbing elements based on a two-dimensional sub-wavelength metal grating, and the reflectance of each pixel is controlled by simple structural modification. For the purpose of validation, numerical simulations were performed on an amplitude modulation hologram fabricated using our method.

Graphene-Semiconductor Catalytic Nanodiodes for Quantitative Detection of Hot Electrons Induced by a Chemical Reaction.

Direct detection of hot electrons generated by exothermic surface reactions on nanocatalysts is an effective strategy to obtain insight into electronic excitation during chemical reactions. For this purpose, we fabricated a novel catalytic nanodiode based on a Schottky junction between a single layer of graphene and an n-type TiO2 layer that enables the detection of hot electron flows produced by hydrogen oxidation on Pt nanoparticles. By making a comparative analysis of data obtained from measuring the hot electron current (chemicurrent) and turnover frequency, we demonstrate that graphene's unique electronic structure and extraordinary material properties, including its atomically thin nature and ballistic electron transport, allow improved conductivity at the interface between the catalytic Pt nanoparticles and the support. Thereby, graphene-based nanodiodes offer an effective and facile way to approach the study of chemical energy conversion mechanisms in composite catalysts with carbon-based supports.

Metal-etching-free direct delamination and transfer of single-layer graphene with a high degree of freedom.

A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single-layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due to the absence of residues that would originate from metal etching. Several demonstrations are also presented to show the high degree of freedom and the resulting versatility of this transfer method.

Improved optical sintering efficiency at the contacts of silver nanowires encapsulated by a graphene layer.

Graphene/silver nanowire (AgNWs) stacked electrodes, i.e., graphene/AgNWs, are fabricated on a glass substrate by air-spray coating of AgNWs followed by subsequent encapsulation via a wet transfer of single-layer graphene (SLG) and multilayer graphene (MLG, reference specimen) sheets. Here, graphene is introduced to improve the optical sintering efficiency of a xenon flash lamp by controlling optical transparency and light absorbing yield in stacked graphene/AgNW electrodes, facilitating the fusion at contacts of AgNWs. Intense pulsed light (IPL) sintering induced ultrafast (<20 ms) welding of AgNW junctions encapsulated by graphene, resulting in approximately a four-fold reduction in the sheet resistance of IPL-treated graphene/AgNWs compared to that of IPL-treated AgNWs. The role of graphene in IPL-treated graphene/AgNWs is further investigated as a passivation layer against thermal oxidation and sulfurization. This work demonstrates that optical sintering is an efficient way to provide fast welding of Ag wire-to-wire junctions in stacked electrodes of graphene/AgNWs, leading to enhanced conductivity as well as superior long-term stability under oxygen and sulfur atmospheres.

Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene.

Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. The correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.

Laser-induced solid-phase doped graphene.

There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of doped graphene by means of silicon carbide (SiC) substrate including a dopant source driven by pulsed laser irradiation. This method provides in situ direct growth of doped graphene on an insulating SiC substrate without a transfer step. A numerical simulation on the temperature history of the SiC surface during laser irradiation reveals that the surface temperature of SiC can be accurately controlled to grow nitrogen-doped graphene from the thermal decomposition of nitrogen-doped SiC. Laser-induced solid-phase doped graphene is highly promising for the realization of graphene-based nanoelectronics with desired functionalities.

Flexible and transparent gas molecule sensor integrated with sensing and heating graphene layers.

Graphene leading to high surface-to-volume ratio and outstanding conductivity is applied for gas molecule sensing with fully utilizing its unique transparent and flexible functionalities which cannot be expected from solid-state gas sensors. In order to attain a fast response and rapid recovering time, the flexible sensors also require integrated flexible and transparent heaters. Here, large-scale flexible and transparent gas molecule sensor devices, integrated with a graphene sensing channel and a graphene transparent heater for fast recovering operation, are demonstrated. This combined all-graphene device structure enables an overall device optical transmittance that exceeds 90% and reliable sensing performance with a bending strain of less than 1.4%. In particular, it is possible to classify the fast (≈14 s) and slow (≈95 s) response due to sp(2) -carbon bonding and disorders on graphene and the self-integrated graphene heater leads to the rapid recovery (≈11 s) of a 2 cm × 2 cm sized sensor with reproducible sensing cycles, including full recovery steps without significant signal degradation under exposure to NO2 gas.

Subwavelength imaging in the visible range using a metal coated carbon nanotube forest.

We demonstrate subwavelength imaging in the visible range by using a metal coated carbon nanotube forest. Under 532 nm illumination, a 160 nm separated double slit is resolved. This corresponds to the resolution of 0.3 wavelength. By controlling the growing conditions and with the help of the microtoming technique, we made a dense carbon nanotube forest layer of 400 nm thickness. The metal coated carbon nanotube forest, acting as a wire medium nanolens, delivers imaging information including details in the evanescent fields near the objects.

Graphene-based plasmonic photodetector for photonic integrated circuits.

We developed a planar-type graphene-based plasmonic photodetector (PD) for the development of all-graphene photonic-integrated-circuits (PICs). By configuring the graphene plasmonic waveguide and PD structure all-in-one, the proposed graphene PD detects horizontally incident light. The photocurrent profile with opposite polarity is the maximum at graphene-electrode interfaces due to a Schottky-like barrier effect at the interface. The photocurrent amplitude increases with an increase of the graphene-metal interface length. Obtaining time constants of less than 39.7 ms for the time response, we concluded that the proposed graphene PD could be exploited further for application in all graphene-based PICs.