Ultra-high-speed four-dimensional hyperspectral imaging.

We propose, to the best of our knowledge, a novel deep learning-enabled four-dimensional spectral imaging system composed of a reflective coded aperture snapshot spectral imaging system and a panchromatic camera. The system simultaneously captures a compressively coded hyperspectral measurement and a panchromatic measurement. The hyperspectral data cube is recovered by the U-net-3D network. The depth information of the scene is then acquired by estimating a disparity map between the hyperspectral data cube and the panchromatic measurement through stereo matching. This disparity map is used to align the hyperspectral data cube and the panchromatic measurement. A designed fusion network is used to improve the spatial reconstruction of the hyperspectral data cube by fusing aligned panchromatic measurements. The hardware prototype of the proposed system demonstrates high-speed four-dimensional spectral imaging that allows for simultaneously acquiring depth and spectral images with an 8 nm spectral resolution between 450 and 700 nm, 2.5 mm depth accuracy, and a 1.83 s reconstruction time.

Low Trap Density Para-F Substituted 2D PEA2PbX4 (X = Cl, Br, I) Single Crystals with Tunable Optoelectrical Properties and High Sensitive X-Ray Detector Performance.

Exploring halogen engineering is of great significance for reducing the density of defect states in crystals of organic-inorganic hybrid perovskites and hence improving the crystal quality. Herein, high-quality single crystals of PEA2PbX4 (X = Cl, Br, I) and their para-F (p-F) substitution analogs are prepared using the facile solution method to study the effects of both p-F substitution and halogen anion engineering. After p-F substitution, the triclinic PEA2PbX4 (X = Cl, Br) and cubic PEA2PbX4 (X = I) crystals unifies to monoclinic crystal structure for p-F-PEA2PbX4 (X = Cl, Br, I) crystals. The p-F substitution and halogen engineering, together with crystal structure variation, enable the tunability of optoelectrical properties. Experimentally, after the p-F substitution, the energy levels are lowered with increased Fermi levels, and the bandgaps of p-F-PEA2PbX4 (X = Cl, Br, I) are slightly reduced. Benefitting from the enhancement of the charge transfer and the reduced trap density by p-F substitution and halogen anion engineering, the average carrier lifetime of the p-F-PEA2PbX4 is obviously reduced. Compared with PEA2PbI4, the X-ray detector based on p-F-PEA2PbI4 perovskite single-crystal has a higher sensitivity of 119.79 µC Gyair -1·cm-2. Moreover, the X-ray detector based on p-F-PEA2PbI4 single crystals exhibits higher radiation stability under high-dose X-ray irradiation, implying long-term operando stability.

Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions.

Although perovskite/two-dimensional (2D) materials heterojunctions have been employed to improve the optoelectronic performance of perovskite photodetectors and solar cells, effects of the intrinsic potential difference (ΔV in ) of asymmetrical 2D materials, like Janus TMDs (J-TMDs), were not revealed yet. Herein, by investigating the optoelectronic properties of CsPbI3/J-TMDs heterojunctions, we find a reversible type-II band alignment related to the intensity and direction of ΔV in , suggesting that carrier transport paths can be reversed by modulating the contact configuration of J-TMDs in the heterojunctions. Meanwhile, the band offset, carrier transfer efficiency and optical properties of those heterojunctions are directly determined by the intensity and direction of ΔV in . Overall, CsPbI3/MoSSe heterojunction is suggested in this work with a tunneling probability of 79.65%. Our work unveils the role of ΔV in in asymmetrical 2D materials on the optoelectronic performances of lead halide perovskite devices, and provides a guideline to design high performance perovskite optoelectronic devices.

Reveal the Humidity Effect on the Phase Pure CsPbBr3 Single Crystals Formation at Room Temperature and Its Application for Ultrahigh Sensitive X-Ray Detector.

Generally, growing phase pure CsPbBr3 single crystals is challenging, and CsPb2 Br5 or Cs4 PbBr6 by-products are usually formed due to the different solubilities of CsBr and PbBr2 in the single solvent. Herein, the growth of high-quality phase pure CsPbBr3 perovskite single crystals at room temperature by a humidity controlled solvent evaporation method is reported first. Meanwhile, the room temperature phase transition process from three dimensional (3D) cubic CsPbBr3 to two dimensional (2D) layered tetragonal CsPb2 Br5 and the detailed mechanism induced by humidity are revealed. Moreover, compared with the organic-inorganic perovskite, the prepared CsPbBr3 single crystals are much more stable under high humidity, which satisfies the long-term working conditions of X-ray detectors. The X-ray detectors based on CsPbBr3 single crystals show a high sensitivity and a low detection limit of 1.89 µGyair s-1 , all of which meet the needs of medical diagnosis.