Influence of Surface Treatments on Urea Detection Using Si Electrolyte-Gated Transistors with Different Gate Electrodes.

We investigated the impact of surface treatments on Si-based electrolyte-gated transistors (EGTs) for detecting urea. Three types of EGTs were fabricated with distinct gate electrodes (Ag, Au, Pt) using a top-down method. These EGTs exhibited exceptional intrinsic electrical properties, including a low subthreshold swing of 80 mV/dec, a high on/off current ratio of 106, and negligible hysteresis. Three surface treatment methods ((3-amino-propyl) triethoxysilane (APTES) and glutaraldehyde (GA), 11-mercaptoundecanoic acid (11-MUA), 3-mercaptopropionic acid (3-MPA)) were individually applied to the EGTs with different gate electrodes (Ag, Au, Pt). Gold nanoparticle binding tests were performed to validate the surface functionalization. We compared their detection performance of urea and found that APTES and GA exhibited the most superior detection characteristics, followed by 11-MUA and 3-MPA, regardless of the gate metal. APTES and GA, with the highest pKa among the three surface treatment methods, did not compromise the activity of urease, making it the most suitable surface treatment method for urea sensing.

Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe2 via Tellurization.

Platinum ditelluride (1T-PtTe2) is a two-dimensional (2D) topological semimetal with a distinctive band structure and flexibility of van der Waals integration as a promising candidate for future electronics and spintronics. Although the synthesis of large-scale, uniform, and highly crystalline films of 2D semimetals system is a prerequisite for device application, the synthetic methods meeting these criteria are still lacking. Here, we introduce an approach to synthesize highly oriented 2D topological semimetal PtTe2 using a thermally assisted conversion called tellurization, which is a cost-efficient method compared to the other epitaxial deposition methods. We demonstrate that achieving highly crystalline 1T-PtTe2 using tellurization is not dependent on epitaxy but rather relies on two critical factors: (i) the crystallinity of the predeposited platinum (Pt) film and (ii) the surface coverage ratio of the Pt film considering lateral lattice expansion during transformation. By optimizing the surface coverage ratio of the epitaxial Pt film, we successfully obtained 2 in. wafer-scale uniformity without in-plane misalignment between antiparallelly oriented domains. The electronic band structure of 2D topological PtTe2 is clearly resolved in momentum space, and we observed an interesting 6-fold gapped Dirac cone at the Fermi surface. Furthermore, ultrahigh electrical conductivity down to ∼3.8 nm, which is consistent with that of single crystal PtTe2, was observed, proving its ultralow defect density.

Sensing Characteristics of SARS-CoV-2 Spike Protein Using Aptamer-Functionalized Si-Based Electrolyte-Gated Field-Effect Transistor (EGT).

The sensing responses of SARS-CoV-2 spike protein using top-down-fabricated Si-based electrolyte-gated transistors (EGTs) have been investigated. An aptamer was employed as a receptor for the SARS-CoV-2 spike protein. The EGT demonstrated excellent intrinsic characteristics and higher sensitivity in the subthreshold regime compared to the linear regime. The limit of detection (LOD) was achieved as low as 0.94 pg/mL and 20 pg/mL for the current and voltage sensitivity, respectively. To analyze the sensing responses of EGT in detecting the aptamer-SARS-CoV-2 spike protein conjugate, a lumped-capacitive model with the presence of an effective dipole potential and an effective capacitance of the functionalized layer component was employed. The aptamer-functionalized EGT showed high sensitivity even in 10 mM phosphate-buffered saline (PBS) solution. These results suggest that Si-based EGTs are a highly promising method for detecting SARS-CoV-2 spike proteins.

Highly Sensitive Detection of Urea Using Si Electrolyte-Gated Transistor with Low Power Consumption.

We experimentally demonstrate Si-based electrolyte-gated transistors (EGTs) for detecting urea. The top-down-fabricated device exhibited excellent intrinsic characteristics, including a low subthreshold swing (SS) (~80 mV/dec) and a high on/off current ratio (~107). The sensitivity, which varied depending on the operation regime, was analyzed with the urea concentrations ranging from 0.1 to 316 mM. The current-related response could be enhanced by reducing the SS of the devices, whereas the voltage-related response remained relatively constant. The urea sensitivity in the subthreshold regime was as high as 1.9 dec/pUrea, four times higher than the reported value. The extracted power consumption of 0.3 nW was extremely low compared to other FET-type sensors.