Universal logic with encoded spin qubits in silicon.

Quantum computation features known examples of hardware acceleration for certain problems, but is challenging to realize because of its susceptibility to small errors from noise or imperfect control. The principles of fault tolerance may enable computational acceleration with imperfect hardware, but they place strict requirements on the character and correlation of errors1. For many qubit technologies2-21, some challenges to achieving fault tolerance can be traced to correlated errors arising from the need to control qubits by injecting microwave energy matching qubit resonances. Here we demonstrate an alternative approach to quantum computation that uses energy-degenerate encoded qubit states controlled by nearest-neighbour contact interactions that partially swap the spin states of electrons with those of their neighbours. Calibrated sequences of such partial swaps, implemented using only voltage pulses, allow universal quantum control while bypassing microwave-associated correlated error sources1,22-28. We use an array of six 28Si/SiGe quantum dots, built using a platform that is capable of extending in two dimensions following processes used in conventional microelectronics29. We quantify the operational fidelity of universal control of two encoded qubits using interleaved randomized benchmarking30, finding a fidelity of 96.3% ± 0.7% for encoded controlled NOT operations and 99.3% ± 0.5% for encoded SWAP. The quantum coherence offered by enriched silicon5-9,16,18,20,22,27,29,31-37, the all-electrical and low-crosstalk-control of partial swap operations1,22-28 and the configurable insensitivity of our encoding to certain error sources28,33,34,38 all combine to offer a strong pathway towards scalable fault tolerance and computational advantage.

A Flexible Design Platform for Si/SiGe Exchange-Only Qubits with Low Disorder.

Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE", features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables nontrivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.

Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit.

Quantum computation requires qubits that satisfy often-conflicting criteria, which include long-lasting coherence and scalable control1. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Although such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes2,3 and can also allow logical control with a single type of entangling interaction4 while maintaining favourable features of the underlying physical system. Here we demonstrate high-fidelity operation of an exchange-only qubit encoded in a subsystem of three coupled electron spins5 confined in gated, isotopically enhanced silicon quantum dots6. This encoding requires neither high-frequency electric nor magnetic fields for control, and instead relies exclusively on the exchange interaction4,5, which is highly local and can be modulated with a large on-off ratio using only fast voltage pulses. It is also compatible with very low and gradient-free magnetic field environments, which simplifies integration with superconducting materials. We developed and employed a modified blind randomized benchmarking protocol that determines both computational and leakage errors7,8, and found that unitary operations have an average total error of 0.35%, with half of that, 0.17%, coming from leakage driven by interactions with substrate nuclear spins. The combination of this proven performance with complete control via gate voltages makes the exchange-only qubit especially attractive for use in many-qubit systems.

A correlated nickelate synaptic transistor.

Inspired by biological neural systems, neuromorphic devices may open up new computing paradigms to explore cognition, learning and limits of parallel computation. Here we report the demonstration of a synaptic transistor with SmNiO3, a correlated electron system with insulator-metal transition temperature at 130°C in bulk form. Non-volatile resistance and synaptic multilevel analogue states are demonstrated by control over composition in ionic liquid-gated devices on silicon platforms. The extent of the resistance modulation can be dramatically controlled by the film microstructure. By simulating the time difference between postneuron and preneuron spikes as the input parameter of a gate bias voltage pulse, synaptic spike-timing-dependent plasticity learning behaviour is realized. The extreme sensitivity of electrical properties to defects in correlated oxides may make them a particularly suitable class of materials to realize artificial biological circuits that can be operated at and above room temperature and seamlessly integrated into conventional electronic circuits.

Preparation and characterization of 4'-donor substituted stilbene-4-thiolate monolayers and their influence on the work function of gold.

Self-assembled monolayers of E-stilbene-4-thiolate (SAM1), E-4'-(ethoxy)stilbene-4-thiolate (SAM2), and E-4'-(dimethylamino)stilbene-4-thiolate (SAM3) on Au(111) have been obtained from reaction of ethanol solutions of the corresponding S-acetyl derivatives with gold substrates. A combination of X-ray photoelectron spectroscopy, ellipsometry, and infrared reflection absorption spectroscopy indicates that the monolayers are dense (ca. 3.3 x 10(14) molecules/cm(2)) and that the long molecular axes of the thiolates are approximately perpendicular to the surface. Ultraviolet photoelectron spectroscopy shows that formation of these monolayers decreases the work function of pristine Au by 0.9-1.3 eV, in part due to a bond dipole of ca. 4.4 D/molecule formed upon adsorption and partly due to the molecular dipole moment arising from the 4'-pi-donor substituents. However, the extent of the work function variation between SAM1, 2, and 3 is smaller than anticipated from purely electrostatic considerations.