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1.
Nanomaterials (Basel) ; 14(14)2024 Jul 12.
Article in English | MEDLINE | ID: mdl-39057868

ABSTRACT

To obtain a high-performance extended gate field-effect transistor for pH detection, hafnium nitride (HfN) was first fabricated on an indium tin oxide on polyethylene terephthalate (ITO/PET) substrate using a high-power impulse magnetron sputter system (HiPIMS) in this study. It can be easily applied in biomedical diagnostic and environmental monitoring applications with the advantages of flexible, disposable, cost-effective, and reliable components. Various duty cycle conditions in HiPIMSs were designed to investigate the corresponding sensing performance and material properties including surface morphology and composition. As the duty cycle increased, the grain size of HfN increased. Additionally, X-ray photoelectron spectroscopy (XPS) analysis illustrated the presence of HfOxNy on the deposited HfN surface. Both behaviors could result in a better pH sensing performance based on the theory of the site-binding model. Subsequently, HfN with a 15% duty cycle exhibited excellent pH sensitivity and linearity, with values of 59.3 mV/pH and 99.8%, respectively; its hysteresis width and drift coefficient were -1 mV and 0.5 mV/h, respectively. Furthermore, this pH-sensing performance remained stable even after 2000 repeated bending cycles. These results indicate the potential and feasibility of this HiPIMS-deposited HfN for future wearable chemical applications.

2.
Pacing Clin Electrophysiol ; 47(8): 1124-1127, 2024 Aug.
Article in English | MEDLINE | ID: mdl-38809030

ABSTRACT

OBJECTIVE: This study evaluates the feasibility and efficacy of implanting a leadless pacemaker at the right atrial appendage (RAA) in a preclinical minipig model, aiming to address the limitations of atrial pacing with current leadless devices like the Medtronic Micra, which is typically used for right ventricular implantation. METHODS: Four minipigs, each with a median body weight of 45.8 ± 10.0 kg, underwent placement of the Micra transcatheter pacing system (TPS) via the right femoral vein into the RAA apex. The pacing performance was assessed over 1-week (short-term) and 3-month (long-term) periods. OUTCOMES: The initial findings indicated successful implantation, with satisfactory intrinsic R-wave amplitudes and pacing threshold. In the following period, the sensitivity, threshold, and impedance were stable with time. Notably, upon explanation at 3 months, a deep myocardial penetration by the device was observed, necessitating a redesign for safe long-term use in a growing subject's heart. CONCLUSION: While initial results suggest that RAA apex placement of the Micra TPS is promising for potential inclusion in a dual-chamber pacing system, the issue of myocardial penetration highlights the need for device redesign to ensure safety and effectiveness in long-term applications.


Subject(s)
Atrial Appendage , Equipment Design , Pacemaker, Artificial , Swine, Miniature , Animals , Swine , Atrial Appendage/surgery , Feasibility Studies , Cardiac Pacing, Artificial/methods
3.
Heliyon ; 9(12): e22512, 2023 Dec.
Article in English | MEDLINE | ID: mdl-38107308

ABSTRACT

Integrating two-dimensional (2D) semiconducting materials into memristor structures has paved the way for emerging 2D materials to be employed in a vast field of memory applications. Bismuth oxyselenide (Bi2O2Se), a 2D material with high electron mobility, has attracted significant research interest owing to its great potential in various fields of advanced applications. Here, we explore the out-of-plane intrinsic switching behavior of few-layered Bi2O2Se via a cross point device for application in conductive bridge random access memory (CBRAM) and artificial synapses for neuromorphic computing. Via state-of-the-art methods, CVD-grown Bi2O2Se nanoplate is applied as a switching material (SM) in an Al/Cu/Bi2O2Se/Pd CBRAM structure. The device exhibits ∼90 consecutive DC cycles with a tight distribution of the SET/RESET voltages under a compliance current (CC) of 1 mA, a retention of over 10 ks, and multilevel switching characteristics showing four distinct states at Vread values of 0.1, 0.2, 0.25, and 0.3 V. Moreover, an artificial synapse is realized with potentiation and depression by modulating the conductance. The switching mechanism is explained via Cu migration through Bi2O2Se based on HRTEM analysis. The present structure shows potential for future integrated memory applications.

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