Design and Implementation of an Event-Driven Smart Sensor Node for Wireless Monitoring Systems.

In this paper, an event-driven wireless sensor node is proposed and demonstrated. The primary design objective is to devise a wireless sensor node with miniaturization, integration, and high-accuracy recognition ability. The proposed wireless sensor node integrates two vibration-threshold-triggered energy harvesters that sense and power a threshold voltage control circuit for power management, a microcontroller unit (MCU) for system control, a one-dimensional convolutional neural network (1D-CNN) environment data analysis and vibration events distribution, and a radio frequency (RF) digital baseband transmitter with IEEE 802.15.4-/.6 protocols. The dimensions of the wireless sensor node are 4 × 2 × 1 cm3. Finally, the proposed wireless sensor node was fabricated and tested. The alarming time for detecting the vibration event is less than 6 s. The measured recognition accuracy of three events (knock, shake, and heat) is over 97.5%. The experimental results showed that the proposed integrated wireless sensor node is very suitable for wireless environmental monitoring systems.

Silicon Micromachined TSVs for Backside Interconnection of Ultra-Small Pressure Sensors.

This paper presents an ultra-small absolute pressure sensor with a silicon-micromachined TSV backside interconnection for high-performance, high spatial resolution contact pressure sensing, including flexible-substrate applications. By exploiting silicon-micromachined TSVs that are compatibly fabricated with the pressure sensor, the sensing signals are emitted from the chip backside, thereby eliminating the fragile leads on the front-side. Such a design achieves a flat and fully passivated top surface to protect the sensor from mechanical damage, for reliable direct-contact pressure sensing. A single-crystal silicon beam-island structure is designed to reduce the deflection of the pressure-sensing diaphragm and improve output linearity. Using our group-developed microholes interetch and sealing (MIS) micromachining technique, we fabricated ultra-small piezoresistive pressure sensors with the chip size as small as 0.4 mm × 0.6 mm, in which the polysilicon-micromachined TSVs transfer the signal interconnection from the front-side to the backside of the wafer, and the sensor chips can be densely packaged on the flexible substrate via the TSVs. The ultra-small pressure sensor has high sensitivity of 0.84 mV/kPa under 3.3 V of supply voltage and low nonlinearity of ±0.09% full scale (FS) in the measurement range of 120 kPa. The proposed pressure sensors with backside-interconnection TSVs hold promise for tactile sensing applications, including flexible sensing of wearable wristwatches.

A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor.

This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of -55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems.

An Energy Harvester with Temperature Threshold Triggered Cycling Generation for Thermal Event Autonomous Monitoring.

This paper proposes a temperature threshold triggered energy harvester for potential application of heat-event monitoring. The proposed structure comprises an electricity generation cantilever and a bimetallic cantilever that magnetically attract together. When the structure is heated to a pre-set temperature threshold, the heat absorption induced bimetallic effect of the bimetallic cantilever will cause sufficient bending of the generation cantilever to get rid of the magnetic attraction. The action triggers the freed generation cantilever into resonance to piezoelectrically generate electricity, and the heated bimetallic cantilever dissipates heat to the environment. With the heat dissipated, the bimetallic cantilever will be restored to attract with the generation cantilever again and the structure returns to the original state. Under continual heating, the temperature threshold triggered cycle is repeated to intermittently generate electric power. In this paper, the temperature threshold of the harvester is modeled, and the harvester prototype is fabricated and tested. The test results indicate that, with the temperature threshold of 71 °C, the harvesting prototype is tested to generate 1.14 V peak-to-peak voltage and 1.077 µW instantaneous power within one cycle. The thermal harvesting scheme shows application potential in heat event-driven autonomous monitoring.

A Front-Side Microfabricated Thermoresistive Gas Flow Sensor for High-Performance, Low-Cost and High-Yield Volume Production.

In this paper, we present a novel thermoresistive gas flow sensor with a high-yield and low-cost volume production by using front-side microfabricated technology. To best improve the thermal resistance, a micro-air-trench between the heater and the thermistors was opened to minimize the heat loss from the heater to the silicon substrate. Two types of gas flow sensors were designed with the optimal thermal-insulation configuration and fabricated by a single-wafer-based single-side process in (111) wafers, where the type A sensor has two thermistors while the type B sensor has four. Chip dimensions of both sensors are as small as 0.7 mm × 0.7 mm and the sensors achieve a short response time of 1.5 ms. Furthermore, without using any amplification, the normalized sensitivity of type A and type B sensors is 1.9 mV/(SLM)/mW and 3.9 mV/(SLM)/mW for nitrogen gas flow and the minimum detectable flow rate is estimated at about 0.53 and 0.26 standard cubic centimeter per minute (sccm), respectively.

On-Chip Integration of Pressure Plus 2-Axis (X/Z) Acceleration Composite TPMS Sensors with a Single-Sided Bulk-Micromachining Technique.

A novel on-chip integration of pressure plus 2-axis (X/Z) acceleration composite sensors for upgraded production of automobile tire pressure monitoring system (TPMS) is proposed, developed, and characterized. Herein, the X-axis accelerometer is with the cantilever beam-mass structure and is used for automatically identifying and positioning each of the four wheels. The IC-Foundry-Compatible low-cost batch fabrication technique of MIS (i.e., Micro-openings Inter-etch and Sealing) is employed to only fabricate the device from the front side of (111) silicon wafer, without double-sided micromachining, wafer bonding, complex Cavity-SOI (Silicon on Insulator) processing, and expensive SOI-wafer needed. Benefited from the single-wafer front-side fabrication technique on ordinary single-polished wafers, the fabricated composite TPMS sensor has the advantages of a small chip-size of 1.9 mm × 1.9 mm, low cross-talk interference, low-cost, and compatible process with IC-foundries. The fabricated pressure sensors, X-axis accelerometer and Z-axis accelerometer, show linear sensing outputs, with the sensitivities as about 0.102 mV/kPa, 0.132 mV/kPa, and 0.136 mV/kPa, respectively. Fabricated with the low-cost front-side MIS process, the fabricated composite TPMS sensors are promising in automotive electronics and volume production.

Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer.

In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and micromachined in one (111)-silicon chip to detect Z-axis and X-/Y-axis high-shock accelerations, respectively. Unlike the previous tri-axis sensors where the X-/Y-axis structure was different from the Z-axis one, the herein used similar cantilever sensing structures for tri-axis sensing facilitates design of uniform performance among the three elements for different sensing axes and simplifies micro-fabrication for the multi-axis sensing structure. Attributed to the tri-axis sensors formed by using the single-wafer single-sided fabrication process, the sensor is mechanically robust enough to endure the harsh high-g shocking environment and can be compatibly batch-fabricated in standard semiconductor foundries. After the single-sided process to form the sensor, the untouched chip backside facilitates simple and reliable die-bond packaging. The high-shock testing results of the fabricated sensor show linear sensing outputs along X-/Y-axis and Z-axis, with the sensitivities (under DC 5 V supply) as about 0.80⁻0.88 µV/g and 1.36 µV/g, respectively. Being advantageous in single-chip compact integration of the tri-axis accelerometers, the proposed monolithic tri-axis sensors are promising to be embedded into detection micro-systems for high-shock measurement applications.

Wearable energy harvesters generating electricity from low-frequency human limb movement.

A wearable energy harvester technology is developed for generating electricity from the movement of human joints. A micro-electroplated ferromagnetic nickel cantilever is integrated with a piezoelectric element and bonded on a flexible substrate. Based on the magnetic interaction between the magnetized cantilever and a magnet on the substrate, a novel vertical-vibration frequency-up-conversion (FUC) structure is formed to generate stable amounts of electric energy per cycle from the horizontal substrate stretching/rebounding. The two ends of the flexible substrate are attached on both sides of a limb joint to transform joint rotation into substrate stretching. During limb movement, the flexible substrate is horizontally stretched and rebounded, causing the cantilever to vertically release from and return to the magnet, thereby exciting the piezoelectric cantilever into resonant generation. Since the horizontal low-frequency limb movement is perpendicular to the vertical high-frequency resonance, the stretch has little influence on the resonance of the cantilever. Thus the generated energy is always stable within a wide frequency range of limb movements. The performance of the novel harvester is experimentally verified using a stretching/rebounding movement cycle, where the cycle corresponds to the frequency range of 0.5-5.0 Hz. Within one stretching/rebounding movement cycle, the generated electric energy is stable in the approximate range of 0.56-0.69 µJ for the whole frequency range. Two flexible harvesters are worn on the human elbow and knee for a body kinetic energy harvesting test. Considerable power can always be generated under typical low-frequency limb movements, such as squatting, walking, jogging, and fast running, where the peak-to-peak generated voltages are always approximately 4.0 V. Additionally, energy harvesting under two-directional area stretching is also realized by adjusting the FUC structure layout. The flexible-substrate harvester is promising for various wearable applications.