Development of efficient computational analysis of difference infrared and Raman spectroscopies.

Computational analysis of difference spectra between two analogous systems is a challenging issue, as reliable estimation of a tiny difference spectrum requires an extraordinary precision of the two original spectra. We have developed an alternative new method to calculate the difference spectra under background-free conditions, which greatly improved the efficiency of computation. In this paper, we report further improvement by using efficient parallel implementation and the time correlation formula based on time derivative quantities. As a consequence, the present work achieved further remarkable acceleration in the calculations of difference infrared and Raman spectra in the order of magnitude and thereby allowed us by analyzing these difference spectra at a practical cost of computation.

One-chip integration of optical correlator based on slow-light devices.

We propose and demonstrate an on-chip optical correlator, in which two types of photonic crystal slow-light waveguides are integrated and operated as an optical delay scanner and a two-photon-absorption photodetector. The footprint of the device, which was fabricated using a CMOS-compatible process, was 1.0 × 0.3 mm(2), which is substantially smaller than that of conventional optical correlators with free-space optics. We observed optical pulses using this device and confirmed the correspondence of pulse waveforms with those observed using a commercial correlator when the pulse width was 5-7 ps. This device will achieve one-chipping of an optical correlator and related measurement instruments.

Slow-light Mach-Zehnder modulators based on Si photonic crystals.

Mach-Zehnder optical modulators are the key devices for high-speed electrical-to-optical conversion in Si photonics. Si rib waveguides with a p-n diode structure operated in the carrier depletion mode have mainly been developed as their phase shifters. Their length is usually longer than millimeters due to the limited change in the refractive index due to the carrier depletion in a Si p-n diode. This length is shorter than commercial LiNbO3 modulators, but still much shorter devices are desired for large-scale integration and for simplifying the high-speed RF modulation. A promising solution is to use slow light in photonic crystal waveguides, which enhances the modulation efficiency in proportion to the group-velocity refractive index ng. In particular, dispersion-engineered slow light allows more than five-fold enhancement, maintaining a wide working spectrum as well as large temperature tolerance. The devices with a phase shifter length of around 100 µm are fabricated by a standard process compatible with complementary metal-oxide semiconductors. The operation at 10 Gbps and higher speeds are obtained in the wavelength range of 16.9 nm and temperature range of 105 K.