ABSTRACT
Chiral perovskite materials are being extensively studied as one of the most promising candidates for circularly polarized luminescence (CPL)-related applications. Balancing chirality and photoluminescence (PL) properties is of great importance for enhancing the value of the dissymmetry factor (glum), and a higher glum value indicates better CPL. Chiral perovskite/quantum dot (QD) composites emerge as an effective strategy for overcoming the dilemma that achieving strong chirality and PL in chiral perovskite while at the same time achieving high glum in this composite is very crucial. Here, we choose diphenyl sulfoxide (DPSO) as an additive in the precursor solution of chiral perovskite to regulate the lattice distortion. How structural variation affects the chiral optoelectronic properties of the chiral perovskite has been further investigated. We find that chiral perovskite/CdSe-ZnS QD composites with strong CPL have been achieved, and the calculated maximum |glum| of the composites increased over one order of magnitude after solvent-additive modulation (1.55 × 10-3 for R-DMF/QDs, 1.58 × 10-2 for R-NMP-DPSO/QDs, -2.63 × 10-3 for S-DMF/QDs, and -2.65 × 10-2 for S-NMP-DPSO/QDs), even at room temperature. Our findings suggest that solvent-additive modulation can effectively regulate the lattice distortion of chiral perovskite, enhancing the value of glum for chiral perovskite/CdSe-ZnS QD composites.
ABSTRACT
Chiral-induced spin selectivity (CISS) effect provides innovative approach to spintronics and quantum-based devices for chiral materials. Different from the conventional ferromagnetic devices, the application of CISS effect is potential to operate under room temperature and zero applied magnetic field. Low dimensional chiral perovskites by introducing chiral amines are beginning to show significant CISS effect for spin injection, but research on chiral perovskites is still in its infancy, especially on spin-light emitting diode (spin-LED) construction. Here, the spin-QLEDs enabled by 2D chiral perovskites as CISS layer for spin-dependent carrier injection and CdSe/ZnS quantum dots (QDs) as light emitting layer are reported. The regulation pattern of the chirality and thickness of chiral perovskites, which affects the circularly polarized electroluminescence (CP-EL) emission of spin-QLED, is discovered. Notably, the spin injection polarization of 2D chiral perovskites is higher than 80% and the CP-EL asymmetric factor (gCP-EL ) achieves up to 1.6 × 10-2 . Consequently, this work opens up a new and effective approach for high-performance spin-LEDs.
ABSTRACT
Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mechanism of enhancing the performance of perovskite photodetectors that are suitable for both inverted and regular structure doped p-i-n perovskite photodiodes. Upon illumination, the generation rate of photogenerated carriers is calculated followed by carrier density distribution, which serves as a coupled joint to further analyze the recombination rate, electric field strength, and current density of carriers under different doping types and densities. Moreover, experiments were carried out in which the doping types and densities of the active layer were regulated by changing the precursor ratios. With optimal doping conditions, the inverted and regular perovskite photodiodes achieved an external quantum efficiency of 74.83% and 73.36%, and a responsivity of 0.417 and 0.404 A/W, respectively. The constructed coupled opto-electronic model reveals the hidden mechanism and along with the doping strategy, this study provides important guidance for further analysis and improvement of perovskite-based photodiodes.
ABSTRACT
As an effective manufacturing technology, inkjet printing is very suitable for the fabrication of perovskite light-emitting diodes in next-generation displays. However, the unsatisfied efficiency of perovskite light-emitting diode created with the use of inkjet printing impedes its development for future application. Here, we report highly efficient PeLEDs using inkjet printing, with an external quantum efficiency of 7.9%, a current efficiency of 32.0 cd/A, and the highest luminance of 2465 cd/m2; these values are among the highest values for the current efficiency of inkjet-printed PeLED in the literature. The outstanding performance of our device is due to the coffee-ring-free and uniform perovskite nanocrystal layer on the PVK layer, resulting from vacuum post-treatment and using a suitable ink. Moreover, the surface roughness and thickness of the perovskite layer are effectively controlled by adjusting the spacing of printing dots. This study makes an insightful exploration of the use of inkjet printing in PeLED fabrication, which is one of the most promising ways for future industrial production of PeLEDs.
ABSTRACT
Directional emission source is one of the key components for multiple-view three-dimensional display. It is hard to achieve high efficiency and large deflection angle direction sources via geometric optics due to the weak confinement of light. The metasurface especially metagrating provides a promising method to control light effectively. However, the conventional forward design methods for metasurface are inherently limited by insufficient control of Bloch modes, which causes a significant efficiency drop at a large deflection angle. Here, we obtained high efficiency large deflection angle metagratings by realizing the constructive interferences among the propagation Bloch modes and enhancing the outcoupling effect at the desired diffraction order. The grating structures that support the coupling of Bloch modes were designed by an inverse design method for different incident wavelengths, and the total phase response of a supercell can be tailored. For a red (620 nm) incident light, the theoretical deflection efficiency of a silicon metagrating can be higher than 80% from 30° to 80°. The experimental deflection efficiency can achieve 86.43% for a 75° deflection metagrating. The matched simulation and experimental results strongly support the reliability of developed algorithm. Our inverse design approach could be extended to the green (530 nm) and blue (460 nm) incident light with titanium dioxide metagratings, with theoretical deflection efficiency of over 80% in a large deflection angle range of 30° to 80°. Considering the multiple visible wavelength deflection capability, the developed algorithm can be potentially applied for full color three-dimensional display, and other functional metagrating devices based on different dielectric materials.
ABSTRACT
The mechanisms for energy transfer including Förster resonance energy transfer (FRET) and radiative energy transfer in ternary-emissive system consists of blended-quantum dots (QDs, red-QDs blended with blue-QDs) emissive layer (EML) and blue-emissive hole-transport material that contained in quantum dot light-emitting diodes (QLEDs) are complicated. As the energy transfer could exhibit either positive or negative impact on QD's photoluminescence (PL) and electroluminescence (EL), it is important to analyze and modulate energy transfer in such ternary-emissive system to obtain high-efficiency QLEDs. In this work, we have demonstrated that proper B-QDs doping has a positive impact on R-QDs' PL and EL, where these improvements were attributed to the B-QDs' spacing effect on R-QDs which weakens homogeneous FRET among R-QDs and near 100% efficient heterogeneous FRET from B-QDs to R-QDs. With optimization based on the analysis of energy transfer, the PL quantum yield of blended-QDs (with R:B blending ratio of 90:10, in quality) film has been enhanced by 35% compared with that of unblended R-QDs film. Moreover, thanks to the spacing effect and high-efficiency FRET from B-QDs to R-QDs, the external quantum efficiency of QLEDs that integrate optimized blended-QDs (R:B=90:10) EML reaches 22.1%, which is 15% higher than that of the control sample (19.2%) with unblended R-QDs EML. This work provides a systematically analytical method to study the energy transfer in ternary-emissive system, and gives a valid reference for the analysis and development of the emerging QLEDs that with blended-QDs EML.
ABSTRACT
Metal-halide perovskite-based green and red light-emitting diodes (LEDs) have witnessed a rapid development because of their facile synthesis and processability; however, the blue-band emission is constrained by their unstable chemical properties and poorly conducting emitting layers. Here, we show a trioctylphosphine oxide (TOPO)-mediated one-step approach to realize bright deep-blue luminescent FAPbBr3 nanoplatelets (NPLs) with enhanced stability and charge transport. The concentration of NPL surface ligands is shown to be progressively tuned via varying the amount of intermediate TOPO due to the acid-base equilibrium between protic acid and TOPO. By effectively optimizing the concentration of surface ligands, the structural integrity of NPL solids can be preserved in ambient air for a week, mainly because of the highly ordered and dense solid assembly and the reduced defects. The removal of excess organic ligands also enables the improvement of charge mobility by orders of magnitude. Ultimately, ultrapure deep-blue perovskite LEDs (439 nm) with a narrow emission width of 14 nm and a peak EQE of 0.14% are achieved at low driving voltage. Our finding expands the current understanding of surface ligand modulation in the development of pure bromide deep-blue perovskite optoelectronics.
