Deep learning-based high-accuracy quantitation for lumbar intervertebral disc degeneration from MRI.

To help doctors and patients evaluate lumbar intervertebral disc degeneration (IVDD) accurately and efficiently, we propose a segmentation network and a quantitation method for IVDD from T2MRI. A semantic segmentation network (BianqueNet) composed of three innovative modules achieves high-precision segmentation of IVDD-related regions. A quantitative method is used to calculate the signal intensity and geometric features of IVDD. Manual measurements have excellent agreement with automatic calculations, but the latter have better repeatability and efficiency. We investigate the relationship between IVDD parameters and demographic information (age, gender, position and IVDD grade) in a large population. Considering these parameters present strong correlation with IVDD grade, we establish a quantitative criterion for IVDD. This fully automated quantitation system for IVDD may provide more precise information for clinical practice, clinical trials, and mechanism investigation. It also would increase the number of patients that can be monitored.

Thermally Reduced Graphene Oxide/Carbon Nanotube Composite Films for Thermal Packaging Applications.

Thermally reduced graphene oxide/carbon nanotube (rGO/CNT) composite films were successfully prepared by a high-temperature annealing process. Their microstructure, thermal conductivity and mechanical properties were systematically studied at different annealing temperatures. As the annealing temperature increased, more oxygen-containing functional groups were removed from the composite film, and the percentage of graphene continuously increased. When the annealing temperature increased from 1100 to 1400 °C, the thermal conductivity of the composite film also continuously increased from 673.9 to 1052.1 W m-1 K-1. Additionally, the Young's modulus was reduced by 63.6%, and the tensile strength was increased by 81.7%. In addition, the introduction of carbon nanotubes provided through-plane thermal conduction pathways for the composite films, which was beneficial for the improvement of their through-plane thermal conductivity. Furthermore, CNTs apparently improved the mechanical properties of rGO/CNT composite films. Compared with the rGO film, 1 wt% CNTs reduced the Young's modulus by 93.3% and increased the tensile strength of the rGO/CNT composite film by 60.3%, which could greatly improve its flexibility. Therefore, the rGO/CNT composite films show great potential for application as thermal interface materials (TIMs) due to their high in-plane thermal conductivity and good mechanical properties.

Atomic Layer Deposition of Buffer Layers for the Growth of Vertically Aligned Carbon Nanotube Arrays.

Vertically aligned carbon nanotube arrays (VACNTs) show a great potential for various applications, such as thermal interface materials (TIMs). Besides the thermally oxidized SiO2, atomic layer deposition (ALD) was also used to synthesize oxide buffer layers before the deposition of the catalyst, such as Al2O3, TiO2, and ZnO. The growth of VACNTs was found to be largely dependent on different oxide buffer layers, which generally prevented the diffusion of the catalyst into the substrate. Among them, the thickest and densest VACNTs could be achieved on Al2O3, and carbon nanotubes were mostly triple-walled. Besides, the deposition temperature was critical to the growth of VACNTs on Al2O3, and their growth rate obviously reduced above 650 °C, which might be related to the Ostwald ripening of the catalyst nanoparticles or subsurface diffusion of the catalyst. Furthermore, the VACNTs/graphene composite film was prepared as the thermal interface material. The VACNTs and graphene were proved to be the effective vertical and transverse heat transfer pathways in it, respectively.

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice.

Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

In this study, silicon nitride (SiNx) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiNx film.