ABSTRACT
Metal oxides are promising (photo)electrocatalysts for sustainable energy technologies due to their good activity and abundant resources. Their applications such as photocatalytic water splitting predominantly involve aqueous interfaces under electrochemical conditions, but in situ probing oxide-water interfaces is proven to be extremely challenging. Here, we present an electrochemical scanning tunneling microscopy (EC-STM) study on the rutile TiO2(110)-water interface, and by tuning surface redox chemistry with careful potential control we are able to obtain high quality images of interfacial structures with atomic details. It is interesting to find that the interfacial water exhibits an unexpected double-row pattern that has never been observed. This finding is confirmed by performing a large scale simulation of a stepped interface model enabled by machine learning accelerated molecular dynamics (MLMD) with ab initio accuracy. Furthermore, we show that this pattern is induced by the steps present on the surface, which can propagate across the terraces through interfacial hydrogen bonds. Our work demonstrates that by combining EC-STM and MLMD we can obtain new atomic details of interfacial structures that are valuable to understand the activity of oxides under realistic conditions.
ABSTRACT
Transition metal chalcogenides have been identified as low-cost and efficient electrocatalysts to promote the hydrogen evolution reaction in alkaline media. However, the identification of active sites and the underlying catalytic mechanism remain elusive. In this work, we employ operando X-ray absorption spectroscopy and near-ambient pressure X-ray photoelectron spectroscopy to elucidate that NiS undergoes an in-situ phase transition to an intimately mixed phase of Ni3S2 and NiO, generating highly active synergistic dual sites at the Ni3S2/NiO interface. The interfacial Ni is the active site for water dissociation and OH* adsorption while the interfacial S acts as the active site for H* adsorption and H2 evolution. Accordingly, the in-situ formation of Ni3S2/NiO interfaces enables NiS electrocatalysts to achieve an overpotential of only 95 ± 8 mV at a current density of 10 mA cm-2. Our work highlighted that the chemistry of transition metal chalcogenides is highly dynamic, and a careful control of the working conditions may lead to the in-situ formation of catalytic species that boost their catalytic performance.
ABSTRACT
The realization of ferromagnetic insulating ground state is a critical prerequisite for spintronic applications. By applying electric field-controlled ionic liquid gating (ILG) to stoichiometry La0.67Sr0.33CoO3 thin films, the doping of protons (H+) has been achieved for the first time. Furthermore, a hitherto-unreported ferromagnetic insulating phase with a remarkably high Tc up to 180 K has been observed which can be attributed to the doping of H+ and the formation of oxygen vacancies (VO). The chemical formula of the dual-ion migrated film has been identified as La2/3Sr1/3CoO8/3H2/3 based on combined Co L23-edge absorption spectra and configuration interaction cluster calculations, from which we are able to explain the ferromagnetic ground state in terms of the distinct magnetic moment contributions from Co ions with octahedral (Oh) and tetrahedral (Td) symmetries following antiparallel spin alignments. Further density functional theory calculations have been performed to verify the functionality of H+ as the transfer ion and the origin of the novel ferromagnetic insulating ground state. Our results provide a fundamental understanding of the ILG regulation mechanism and shed light on the manipulating of more functionalities in other correlated compounds through dual-ion manipulation.
ABSTRACT
Identification of active sites in catalytic materials is important and helps establish approaches to the precise design of catalysts for achieving high reactivity. Generally, active sites of conventional heterogeneous catalysts can be single atom, nanoparticle or a metal/oxide interface. Herein, we report that metal/oxide reverse interfaces can also be active sites which are created from the coordinated migration of metal and oxide atoms. As an example, a Pd1/CeO2 single-atom catalyst prepared via atom trapping, which is otherwise inactive at 30 °C, is able to completely oxidize formaldehyde after steam treatment. The enhanced reactivity is due to the formation of a Ce2O3-Pd nanoparticle domain interface, which is generated by the migration of both Ce and Pd atoms on the atom-trapped Pd1/CeO2 catalyst during steam treatment. We show that the generation of metal oxide-metal interfaces can be achieved in other heterogeneous catalysts due to the coordinated mobility of metal and oxide atoms, demonstrating the formation of a new active interface when using metal single-atom material as catalyst precursor.
ABSTRACT
The direct oxidation of methane to methanol (MTM) remains a significant challenge in heterogeneous catalysis due to the high dissociation energy of the C-H bond in methane and the high desorption energy of methanol. In this work, we demonstrate a breakthrough in selective MTM by achieving a high methanol space-time yield of 2678 mmol molCu-1 h-1 with 93% selectivity in a continuous methane-steam reaction at 400 °C. The superior performance is attributed to the confinement effect of 6-membered ring (6MR) voids in SSZ-13 zeolite, which host isolated Cu-OH single sites. Our results provide a deeper understanding of the role of Cu-zeolites in continuous methane-steam to methanol conversion and pave the way for further improvement.
ABSTRACT
Ni-based transition metal oxides are promising oxygen-evolution reaction (OER) catalysts due to their abundance and high activity. Identification and manipulation of the chemical properties of the real active phase on the catalyst surface is crucial to improve the reaction kinetics and efficiency of the OER. Herein, we used electrochemical-scanning tunnelling microscopy (EC-STM) to directly observe structural dynamics during the OER on LaNiO3 (LNO) epitaxial thin films. Based on comparison of dynamic topographical changes in different compositions of LNO surface termination, we propose that reconstruction of surface morphology originated from transition of Ni species on LNO surface termination during the OER. Furthermore, we showed that the change in surface topography of LNO was induced by Ni(OH)2/NiOOH redox transformation by quantifying STM images. Our findings demonstrate that in situ characterization for visualization and quantification of thin films is very important for revealing the dynamic nature of the interface of catalysts under electrochemical conditions. This strategy is crucial for in-depth understanding of the intrinsic catalytic mechanism of the OER and rational design of high-efficiency electrocatalysts.
ABSTRACT
Transition metal oxides are promising candidates for the next generation of spintronic devices due to their fascinating properties that can be effectively engineered by strain, defects, and microstructure. An excellent example can be found in ferroelastic LaCoO3 with paramagnetism in bulk. In contrast, unexpected ferromagnetism is observed in tensile-strained LaCoO3 films, however, its origin remains controversial. Here we simultaneously reveal the formation of ordered oxygen vacancies and previously unreported long-range suppression of CoO6 octahedral rotations throughout LaCoO3 films. Supported by density functional theory calculations, we find that the strong modification of Co 3d-O 2p hybridization associated with the increase of both Co-O-Co bond angle and Co-O bond length weakens the crystal-field splitting and facilitates an ordered high-spin state of Co ions, inducing an emergent ferromagnetic-insulating state. Our work provides unique insights into underlying mechanisms driving the ferromagnetic-insulating state in tensile-strained ferroelastic LaCoO3 films while suggesting potential applications toward low-power spintronic devices.
ABSTRACT
Forming semiconductor heterojunctions is a promising strategy to boost the efficiency of solar-driven photoelectrochemical (PEC) water splitting by accelerating the separation and transport of photogenerated charge carriers via an interfacial electric field. However, there is limited research considering the influence of electrolytes on the band alignment of the heterojunction under PEC conditions. In this work, we use a single crystal NiCo2O4/SrTiO3 (NCO/STO) heterojunction with atomic-precision controlled thickness as a model photoelectrode to study the band structure modulations upon getting in contact with the electrolyte and the correlation with the PEC activity. It is found that the band alignment can be tuned by the control of p-n heterojunction film thickness and regulated by the water redox potential (Eredox). When the Fermi level (EF) of the heterojunction is higher/lower than the Eredox, the band bending at the NCO/STO-electrolyte interface will increase/decrease after contacting with the electrolyte. However, when the band bending width of the NCO layer is thinner than its thickness, the electrolyte will not influence the band alignment at the NCO/STO interface. In addition, PEC characterization results show that the 1 nm NCO/STO heterojunction photoanode exhibits superior water-splitting performance, owing to the optimum band structure of the p-n heterojunction and the shorter charge transfer distance.
ABSTRACT
Here, we investigate the photoconductivity of gallium oxide thin films at different temperatures using time-resolved terahertz spectroscopy. The photogenerated electrons in the conduction band show a monoexponential decay, implying a first-order electron depopulation mechanism. The electron lifetime increases with rising temperature, and this trend coincides with the temperature dependence of the electron mobility rather than diffusion coefficient, suggesting that electron-hole recombination is determined by directional electron drift instead of random diffusion. The electron mobilities extracted from the transient terahertz conductivity are substantially greater than the previously reported Hall mobilities over a wide temperature range, and this is probably because the electron drift in response to the terahertz field is immune from scattering with macroscopic defects. Thus, the mobilities measured here may represent the intrinsic limit of the electron mobility in gallium oxide crystals. Our finding suggests that the current Hall mobility in this wide bandgap semiconductor is still far below the limit, and the long-range electron transport can be further increased by improving the crystalline quality.
ABSTRACT
The photocarrier recombination in van der Waals layers may determine the device performance based on these materials. Here, we investigated the photocarrier dynamics in a multilayer indium selenide nanofilm using transient absorption spectroscopy. The sub-bandgap transient absorption feature was attributed to the indirect intraband absorption of the photocarriers, which was then exploited as a probe to monitor the photocarrier dynamics. With increasing pump intensities, the photocarrier decay was accelerated because of the rising contribution from a bimolecular recombination channel that was then assigned to exciton-exciton annihilation. The rate constant of the exciton-exciton annihilation was given as (1.8 ± 0.1) × 10-15 cm2 ps-1 from a global fitting of the photocarrier decay kinetics for different pump intensities. Our finding suggests that, in contrast with their monolayer counterpart, the exciton-exciton annihilation is rather inefficient in multilayers due to their weaker Coulomb interaction. Hence, compared with monolayers, the lifetime of photocarriers in multilayers would not be significantly reduced under high-intensity pump conditions, and the apparent photocarrier lifetime could be further improved just by suppressing the monomolecular recombination channels such as trapping.
ABSTRACT
Hydrogen peroxide (H2O2) has the wide range of applications in industry and living life. However, the development of the efficient heterogeneous catalyst in the direct H2O2 synthesis (DHS) from H2 and O2 remains a formidable challenge because of the low H2O2 producibility. Herein, we develop a two-step approach to prepare PdSn nanowire catalysts, which comprises Pd oxide layered on PdSn nanowires (PdL/PdSn-NW). The PdL/PdSn-NW displays superior reactivity in the DHS at zero Celcius, presenting the H2O2 producibility of 528 mol kgcat-1·h-1 and H2O2 selectivity of >95%. A layer of Pd oxide on the PdSn nanowire generates bi-coordinated Pd, leading to the different adsorption behaviors of O2, H2 and H2O2 on the PdL/PdSn-NW. Furthermore, the weak adsorption of H2O2 on the PdL/PdSn-NW contributes to the low activation energy and high H2O2 producibility. This surface engineering approach, depositing metal layer on metal nanowires, provides a new insight in the rational designing of efficient catalyst for DHS.
ABSTRACT
Bismuth vanadate (BiVO4) is a promising photoanode material for solar-driven water splitting, and knowledge of the photocarrier dynamics in BiVO4 could offer guidance to propel the development of the photoanode performance. Herein, we uncovered the nature of various photogenerated transient species in BiVO4 and extracted their respective dynamics. We found spectral and dynamic evidence that the electrons in the conduction band collapsed into severely localized small electron polarons on a subpicosecond time scale, while the holes in the valence band remained delocalized and accounted for the photoconductivity. In the following tens to hundreds of picoseconds, the electron polaron captured the hole to form a self-trapped exciton via a bimolecular reaction mechanism, and in consequence, the hole was immobilized. Our finding suggests that exciton dissociation strategies should be taken into account in the design of the BiVO4-based water-splitting applications in order to enhance charge transport and suppress charge recombination.
ABSTRACT
The antimony chalcogenide crystals are composed of quasi-one-dimensional [Sb4X6]n ribbons, which lead to strong anisotropic optical and electronic properties. An attempt to exploit photoconductivity anisotropy in the device fabrication may introduce a rewarding strategy to propel the development of the antimony chalcogenide solar cells. To achieve this, understanding of the dynamic evolution of the photoconductivity anisotropy is required. Here, the photoconductivities along different lattice directions in an antimony selenide single crystal are investigated by time-resolved terahertz spectroscopy. We find that electron trapping results in a variation of the photoconductivity anisotropy accompanied by a decrease in the photoconductivity magnitude, while electron-hole recombination only reduces the magnitude but does not affect the anisotropy. Therefore, measuring the temporal evolution of photoconductivity anisotropy can provide a wealth of information regarding the nature of the photocarrier and also render a probe to selectively evaluate the photoconductivity decay mechanisms.
ABSTRACT
Oxide heterointerfaces with high carrier density can interact strongly with the lattice phonons, generating considerable plasmon-phonon coupling and thereby perturbing the fascinating optical and electronic properties, such as two-dimensional electron gas, ferromagnetism, and superconductivity. Here we use infrared-spectroscopic nanoimaging based on scattering-type scanning near-field optical microscopy (s-SNOM) to quantify the interaction of electron-phonon coupling and the spatial distribution of local charge carriers at the SrTiO3/TiO2 interface. We found an increased high-frequency dielectric constant (ε∞ = 7.1-9.0) and charge carrier density (n = 6.5 × 1019 to 1.5 × 1020 cm-3) near the heterointerface. Moreover, quantitative information between the charge carrier density and extension thickness across the heterointerface has been extracted by monochromatic near-field imaging. A direct evaluation of the relationship between the thickness and the interaction of charge carrier-phonon coupling of the heterointerface would provide valuable information for the development of oxide-based electronic devices.
ABSTRACT
Oxide semiconductors are key materials in many technologies from flat-panel displaysï¼solar cells to transparent electronics. However, many potential applications are hindered by the lack of high mobility p-type oxide semiconductors due to the localized O-2p derived valence band (VB) structure. In this work, the VB structure modulation is reported for perovskite Ba2 BiMO6 (M = Bi, Nb, Ta) via the Bi 6s2 lone pair state to achieve p-type oxide semiconductors with high hole mobility up to 21 cm2 V-1 s-1 , and optical bandgaps widely varying from 1.5 to 3.2 eV. Pulsed laser deposition is used to grow high quality epitaxial thin films. Synergistic combination of hard x-ray photoemission, x-ray absorption spectroscopies, and density functional theory calculations are used to gain insight into the electronic structure of Ba2 BiMO6 . The high mobility is attributed to the highly dispersive VB edges contributed from the strong coupling of Bi 6s with O 2p at the top of VB that lead to low hole effective masses (0.4-0.7 me ). Large variation in bandgaps results from the change in the energy positions of unoccupied Bi 6s orbital or Nb/Ta d orbitals that form the bottom of conduction band. P-N junction diode constructed with p-type Ba2 BiTaO6 and n-type Nb doped SrTiO3 exhibits high rectifying ratio of 1.3 × 104 at ±3 V, showing great potential in fabricating high-quality devices. This work provides deep insight into the electronic structure of Bi3+ based perovskites and guides the development of new p-type oxide semiconductors.
ABSTRACT
Perovskite oxides have emerged as promising candidates for the oxygen evolution reaction (OER) electrocatalyst due to their flexible lattice structure, tunable electronic structure, superior stability, and cost-effectiveness. Recent research studies have mostly focused on the traditional methods to tune the OER performance, such as cation/anion doping, A-/B-site ordering, epitaxial strain, oxygen vacancy, and so forth, leading to reasonable yet still limited activity enhancement. Here, we report a novel strategy for promoting the OER activity for perovskite LaNiO3 by crystal phase engineering, which is realized by breaking long-range chemical bonding through amorphization. We provide the first and direct evidence that perovskite oxides with an amorphous structure can induce the self-adaptive process, which helps enhance the OER performance. This is evidenced by the fact that an amorphous LaNiO3 film on glassy carbon shows a 9-fold increase in the current density compared to that of an epitaxial LaNiO3 single crystalline film. The obtained current density of 1038 µΑ cm-2 (@ 1.6 vs RHE) is the largest value among the literature reported values. Our work thus offers a new protocol to boost the OER performance for perovskite oxides for future clean energy applications.
ABSTRACT
The self-trapping of a free carrier in transition-metal oxides can lead to a small polaron, which is responsible for the inadequate performance of the oxide-based optoelectronic applications. Thus, fundamental understanding of the self-trapping mechanism is of key importance for improving the performance of these applications. Herein, the self-trapping in Co3O4 epitaxial monocrystalline films is investigated primarily by transient absorption spectroscopy. The spectral evolution corresponding to the ultrafast transition from free carriers to small polarons is identified, which allows us to extract the self-trapping kinetics. The relationship between the self-trapping rate and temperature suggests a lack of thermal activation energy. A barrierless self-trapping mechanism derived from the small polaron framework is then proposed, which can successfully describe the observation that self-trapping rate decreases linearly with increasing temperature. Given that small polarons are ubiquitous in transition-metal oxides, this self-trapping mechanism is potentially a general phenomenon in these materials.
ABSTRACT
Low-cost transition-metal oxide is regarded as a promising electrocatalyst family for an oxygen evolution reaction (OER). The classic design principle for an oxide electrocatalyst believes that point defect engineering, such as oxygen vacancies (VO..) or heteroatom doping, offers the opportunities to manipulate the electronic structure of material toward optimal OER activity. Oppositely, in this work, we discover a counterintuitive phenomenon that both VO.. and an aliovalent dopant (i.e., proton (H+)) in perovskite nickelate (i.e., NdNiO3 (NNO)) have a considerably detrimental effect on intrinsic OER performance. Detailed characterizations unveil that the introduction of these point defects leads to a decrease in the oxidative state of Ni and weakens Ni-O orbital hybridization, which triggers the local electron-electron correlation and a more insulating state. Evidenced by first-principles calculation using the density functional theory (DFT) method, the OER on nickelate electrocatalysts follows the lattice oxygen mechanism (LOM). The incorporation of point defect increases the energy barrier of transformation from OO*(VO) to OH*(VO) intermediates, which is regarded as the rate-determining step (RDS). This work offers a new and significant perspective of the role that lattice defects play in the OER process.
ABSTRACT
Here, we investigate the intrinsic nonradiative recombination mechanism in hematite single crystals that decides the photocarrier lifetime under solar illumination. On the basis of the small polaron theory, we propose that the photogenerated electron-hole pair along with its induced lattice deformation in hematite could be treated as a pseudocoordination-complex (PCC) dispersed in a solid medium. We demonstrate that the nonradiative recombination rate at different temperatures determined from the transient absorption spectroscopy can be excellently described by the nonradiative transition theory developed previously for parallels of the PCC model. Our finding suggests that at room temperature the nonradiative recombination in hematite substantially depends on the probability of quantum tunneling of the nuclear configuration.
ABSTRACT
Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and high-performing thin film transistor (TFT) devices in the context of fundamental understanding is presented. In particular, an in depth overview is first provided on current understanding of the electronic structures, defect and doping chemistry, optical and transport properties of oxide semiconductors, which provide essential guiding principles for new material design and device optimization. With these principles, recent advances in design of p-type oxide semiconductors, new approaches for achieving cost-effective transparent (flexible) electrodes, and the creation of high mobility 2D electron gas (2DEG) at oxide surfaces and interfaces with a wealth of fascinating physical properties of great potential for novel device design are then reviewed. Finally, recent progress and perspective of oxide TFT based on new oxide semiconductors, 2DEG, and low-temperature solution processed oxide semiconductor for flexible electronics will be reviewed.