Theoretical insight into physical characteristics of lead-free perovskites Rb2TlSbX6 (X = Cl, Br, I) for optoelectronic devices.

CONTEXT: Novel optoelectronic and thermoelectric properties with broad compositional range, non-toxic nature and structural stability make halide-based double perovskites fascinating for flexible optoelectronic devices. In this work, the structural electronic, optical and transport properties of Rb2TlSbX6 (X = Cl, Br, I) were studied using density functional theory for optoelectronic devices. The elastic analysis demonstrates ductile nature, mechanical stability, anisotropic behaviour and feasibility for flexible optoelectronic devices. The band structure study using Tran-Blaha-modified Becke-Johnson (TB-mBJ) potential shows that all studied materials have direct bandgap. In addition, the bandgap of Rb2TlSbCl6 is more appropriate for optoelectronic devices. The small loss and maximum absorption in visible regions make these materials prime candidates for optoelectronic devices. The transport features indicate that all the studied double perovskites reflect p-type semiconducting behaviour as highlighted by positive Seebeck coefficient values. Furthermore, the high power factor values of Rb2TlSbX6 (X = Cl, Br, I) double perovskites make them suitable for thermoelectric device applications at high temperatures. Based on electronic optical and thermoelectric properties Rb2TlSbCl6 is the best candidate for flexible optoelectronic devices. METHODS: In this paper, structural optimization of Rb2TlSbX6 (X = Cl, Br, I) double perovskites was conducted utilizing the Wien2k software based on first principle calculations with Perdew-Burke-Ernzerhof's generalized-gradient approximation (PBE-sol approximation). The TB-mBJ potential was employed to compute the accurate band gap of studied materials. The thermoelectric properties are evaluated with BoltzTraP code, showing a predominance of P-type charge carriers in all studied perovskites. This methodological strategy verifies the material's remarkable stability and optical properties and offers a solid framework for examining its potential in optoelectronic devices.

Air-coupled ultrasonic transducer based on lead-free piezoceramics prepared by digital light processing 3D printing.

Piezoelectric composite ceramics, as the key components of ultrasonic transducers, have their vibration modes, electromechanical coupling performance, and acoustic impedance closely related to the volume fraction of ceramics. This study employed a novel digital light processing 3D printing technique (DLP) to fabricate 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BCZT)-based 1-3 piezoelectric composite ceramics with different ceramic volume fractions (15.6 %, 23.5 %, 36.2 %, 48.4 %, 59.5 %). It demonstrates the suitability of the DLP process for the fabrication of 1-3 piezoelectric composite ceramics and investigates the influence of ceramic volume fraction on the performance of these ceramics. When the piezoelectric ceramic volume fraction was 59.5 %, the piezoelectric coefficient effective d33 of the 1-3 piezoelectric composite device reached 315 pC/N, demonstrating excellent piezoelectric performance. The acoustic impedance Z was 16.3 MRayl, and the thickness electromechanical coupling coefficient kt was 0.55, indicating high energy conversion efficiency. The air-coupled ultrasonic transducer prepared from the 1-3 piezoelectric composite ceramics with a ceramic volume fraction of 59.5 % exhibited a round-trip insertion loss (IL) of -70.32 dB and a -6 dB bandwidth (BW-6dB) of 7.42 %. This work provides a more convenient and new method for the preparation of lead-free piezoelectric ceramic ultrasonic transducers.

The Influence of Lanthanum Admixture on Microstructure and Electrophysical Properties of Lead-Free Barium Iron Niobate Ceramics.

This article presents the research results of lead-free Ba1-3/2xLax(Fe0.5Nb0.5)O3 (BFNxLa) ceramic materials doped with La (x = 0.00-0.06) obtained via the solid-state reaction method. The tests of the BFNxLa ceramic samples included structural (X-ray), morphological (SEM, EDS, EPMA), DC electrical conductivity, and dielectric measurements. For all BFNxLa ceramic samples, the X-ray tests revealed a perovskite-type cubic structure with the space group Pm3¯m. In the case of the samples with the highest amount of lanthanum, i.e., for x = 0.04 (BFN4La) and x = 0.06 (BFN6La), the X-ray analysis also showed a small amount of pyrochlore LaNbO4 secondary phase. In the microstructure of BFNxLa ceramic samples, the average grain size decreases with increasing La content, affecting their dielectric properties. The BFN ceramics show relaxation properties, diffusion phase transition, and very high permittivity at room temperature (56,750 for 1 kHz). The admixture of lanthanum diminishes the permittivity values but effectively reduces the dielectric loss and electrical conductivity of the BFNxLa ceramic samples. All BFNxLa samples show a Debye-like relaxation behavior at lower frequencies; the frequency dispersion of the dielectric constant becomes weaker with increasing admixtures of lanthanum. Research has shown that using an appropriate amount of lanthanum introduced to BFN can obtain high permittivity values while decreasing dielectric loss and electrical conductivity, which predisposes them to energy storage applications.

Advanced Light Management for Encapsulated Silicon Solar Cells: An Antireflective Textured Film with a Down-Shifting Lead-free Perovskite Cs2AgxNa1-xBiyIn1-yCl6 Phosphor.

Light management (LM) is the key to the encapsulation of high-performance silicon (Si) photovoltaic devices (PVs). In this work, simulation analyses provide meaningful insights into optical losses and guide the improvement of the PV performance of the encapsulated silicon solar cells (Encap-Si SCs). An antireflective layer, textured polydimethylsiloxane (PDMS), is designed to reduce reflection losses, especially at a lower illumination intensity, thereby achieving an improvement of 10.89% in the short-current density (JSC) and hence 12.67% in the power conversion efficiency (PCE) when illuminated at an incident angle of 60°. Subsequently, a luminescence down-shifting material, lead-free Cs2AgxNa1-xBiyIn1-yCl6 (CANBIC) double perovskite phosphor, is incorporated into the PDMS film to further enhance the energy yield in the ultraviolet (UV) region. The textured PDMS film with an optimized CANBIC content ultimately achieves a significant improvement in PCE from 21.770 to 23.136%. This enhancement is attributed to the increase in JSC by 2.381 mA/cm2 due to the reduced reflection losses (by antireflective PDMS) and down-converted UV energy (by CANBIC), providing a remarkable advance in LM toward highly efficient encapsulated PVs.

Solution Synthesis and Light-Emitting Applications of One-Dimensional Lead-Free Cerium(III) Metal Halides.

Combining rare earth elements with the halide perovskite structure offers valuable insights into designing nonlead (Pb) luminescent materials. However, most of these compositions tend to form zero-dimensional (0D) networks of metal-halide polyhedra, with higher-dimensional (1D, 2D, and 3D) structures receiving relatively less exploration. Herein, we present synthesis and optical properties of Cs3CeCl6·3H2O, characterized by its unique 1D crystal structure. The conduction band minimum of Cs3CeCl6·3H2O becomes less localized as a result of the increased structural dimension, making it possible for the materials to achieve an efficient electrical injection. For both Cs3CeCl6·3H2O single crystals and nanocrystals, we also observed remarkable luminescence with near-unity photoluminescence quantum yield and exceptional phase stability. Cs3CeCl6·3H2O single crystals demonstrate an X-ray scintillation light yield of 31900 photons/MeV, higher than that of commercial LuAG:Ce (22000 photons/MeV); electrically driven light-emitting diodes fabricated with Cs3CeCl6·3H2O nanocrystals yield the characteristic emission of Ce3+, indicating their potential use in next-generation violet-light-emitting devices.

Polarized Raman, infrared and dielectric spectra of lead-free K0.5Na0.5NbO3piezoelectric system: insights fromab-initiotheoretical and experimental studies.

The K0.5Na0.5NbO3(KNN) system has emerged as one of the most promising lead-free piezoelectric over the years. In this work, we perform a comprehensive investigation of electronic structure, lattice dynamics and dielectric properties of room temperature phase of KNN by combiningab-initioDFT based theoretical analysis and experimental characterization. We assign the symmetry labels to KNN vibrational modes and obtainab-initiopolarized Raman spectra, Infrared reflectivity, Born-effective charge tensors, oscillator strengths etc. The KNN ceramic samples are prepared using conventional solid-state method and Raman and UV-Vis diffuse reflectance spectra are obtained. The computed Raman spectrum is found to agree well with the experimental spectrum. In particular, the results suggest that the mode in range ∼840-870 cm-1reported in the experimental studies is longitudinal optical withA1symmetry. The Raman mode intensities are calculated for different light polarization set-ups that suggests the observation of different symmetry modes in different polarization set-ups. The electronic structure of KNN is investigated and optical absorption spectrum is obtained. Further, the performances of DFT semi-local, meta-GGA and hybrid exchange-correlations functionals, in the estimation of KNN band gaps are investigated. The KNN bandgap computed using GGA-1/2 and HSE06 hybrid functional schemes are found to be in excellent agreement with the experimental value. The COHP, electron localization function and Bader charge analysis is also performed to deduce the nature of chemical bonding in the KNN. Overall, our study provides several bench-mark important results on KNN that have not been reported so far.

Comprehensive investigation of material properties and operational parameters for enhancing performance and stability of FASnI3-based perovskite solar cells.

Recent advancements in the efficiency of lead-based halide perovskite solar cells (PSCs), exceeding 25%, have raised concerns about their toxicity and suitability for mass commercialization. As a result, tin-based PSCs have emerged as attractive alternatives. Among diverse types of tin-based PSCs, organic-inorganic metal halide materials, particularly FASnI3 stands out for high efficiency, remarkable stability, low-cost, and straightforward solution-based fabrication process. In this work, we modelled the performance of FASnI3 PSCs with four different hole transporting materials (Spiro-OMeTAD, Cu2O, CuI, and CuSCN) using SCAPS-1D program. Compared to the initial structure of Ag/Spiro-OMeTAD/FASnI3/TiO2/FTO, analysis on current-voltage and quantum efficiency characteristics identified Cu2O as an ideal hole transport material. Optimizing device output involved exploring the thickness of the FASnI3 layer, defect density states, light reflection/transmission at the back and front metal contacts, effects of metal work function, and operational temperature. Maximum performance and high stability have been achieved, where an open-circuit voltage of 1.16 V, and a high short-circuit current density of 31.70 mA/cm2 were obtained. Further study on charge carriers capture cross-section demonstrated a PCE of 32.47% and FF of 88.53% at a selected capture cross-section of electrons and holes of 1022 cm2. This work aims to guide researchers for building and manufacturing perovskite solar cells that are more stable with moderate thickness, more effective, and economically feasible.

Development of Lead-Free Materials for Radiation Shielding in Medical Settings: A Review.

Radiation protection is an essential issue in diagnostic radiology to ensure the safety of patients, healthcare professionals, and the general public. Lead has traditionally been used as a shielding material due to its high atomic number, high density, and effectiveness in attenuating radiation. However, some concerns related to the long-term health effects of toxicity, environmental disease as well as heavy weight of lead have led to the search for alternative lead-free shielding materials. Leadfree multilayered polymer composites and non-lead nano-composite shields have been suggested as effective shielding materials to replace conventional lead-based and single metal shields. Using several elements with high density and atomic number, such as bismuth, barium, gadolinium, and tungsten, offer significant enhancements in the shielding ability of composites. This review focuses on the development and use of lead-free materials for radiation shielding in medical settings. It discusses the drawbacks of traditional lead shielding, such as toxicity, weight, and recycling challenges, and highlights the benefits of lead-free alternatives.

High-Performance Broadband Self-Driven Photodetector Based on MoS2/Cs2CuBr4 Heterojunction.

Few-layer transition metal dichalcogenides and perovskites are both promising materials in high-performance optoelectronic devices. Here, we developed a self-driven photodetector by creating a heterojunction between few-layer MoS2 and lead-free perovskite Cs2CuBr4. The detector shows a unique property of very high sensitivity in a broad spectral range of 400 to 800 nm with response speed in a millisecond order. Current-voltage characteristics of the heterojunction device show rectifying behavior, in contrast to the ohmic behavior of the MoS2-based device. The rectifying behavior is attributed to the type II band alignment of the MoS2/Cs2CuBr4 heterojunction. The device shows a broadband (400 to 800 nm) photodetection with very high responsivity reaching up to 2.8 × 104 A/W and detectivity of 1.6 × 1011 Jones at a bias voltage of 3 V. The detector can also operate in self-bias mode with sufficient response. The photocurrent, photoresponsivity, detectivity, and external quantum efficiency of the device are found to be dependent on the illumination power density. The response time of the device is found to be ∼32 and ∼79 ms during the rise and fall of the photocurrent. The work proposes a MoS2/Cs2CuBr4 heterostructure to be a promising candidate for cost-effective, high-performance photodetector.

2D Metal Enabled Weak Fermi Level Pinning Effect and Tunable Charge Injection in Contacts with Inorganic 2D Perovskites.

Tow-dimensional (2D) perovskites have invoked extensive interest because of their good stability and intriguing optoelectronic properties. However, in practical applications, the hampered carrier transportation imposed by the vertical array of large dielectric organic cations and the generally seen Fermi level pinning (FLP) effect in conventional metal-2D semiconductors need to be solved urgently. Sb3+/Bi3+-based inorganic lead-free 2D Cs3(M3+)2X9 perovskites (M = Sb3+, Bi3+; X = Cl-, Br-, I-) are promising candidates to replace the toxic 2D hLHP. The contact properties of Cs3Sb2Cl9 with 2D metals are studied in this work to achieve tunable Schottky barrier heights (SBH). Density functional theory calculations reveal a weak FLP factor of 0.91 in the studied junctions, which is beneficial for improving the carrier injection efficiency through electrode design. Calculations of tunneling properties indicate that a Cd3C2 electrode tends to achieve low SBH and high tunneling probability, while a VS2 (H) electrode tends to realize high SBH and low tunneling probability, suggesting that diverse applications of Cs3Sb2Cl9 can be achieved through electrode engineering.

Designing and synthesis of perovskite nanocrystals: a promising wide-spectrum solar light-responsive photocatalyst and lead ion sensor.

Perovskites are an emerging material with a variety of applications, ranging from their solar light conversion capability to their sensing efficiency. In current study, perovskite nanocrystals (PNCs) were designed using theoretical density functional theory (DFT) analysis. Moreover, the theoretically designed PNCs were fabricated and confirmed by various characterization techniques. The calculated optical bandgap from UV-Vis and fluorescence spectra were 2.15 and 2.05 eV, respectively. The average crystallite size of PNCs calculated from Scherrer equation was 15.18 nm, and point of zero charge (PZC) was obtained at pH 8. The maximum eosin B (EB) removal efficiency by PNCs was 99.56% at optimized conditions following first-order kinetics with 0.98 R2 value. The goodness of the response surface methodology (RSM) model was confirmed from analysis of variance (ANOVA), with the experimental F value (named after Ronald Fisher) of 194.66 being greater than the critical F value F0.05, 14, 14 = 2.48 and a lack of fit value of 0.0587. The Stern-Volmer equation with a larger Ksv value of 1.303710 × 10 6 for Pb2+ suggests its greater sensitivity for Pb2+ among the different metals tested.

Manipulating the Crystallization of Tin Halide Perovskites for Efficient Moisture-to-Electricity Conversion.

Manipulating the crystallization of perovskite in thin films is essential for the fabrication of any thin-film-based devices. Fabricating tin-based perovskite films from solution poses difficulties because tin tends to crystallize faster than the commonly used lead perovskite. To achieve optimal device performance in solar cells, the preferred method involves depositing tin perovskite under inert conditions using dimethyl sulfoxide (DMSO), which effectively retards the formation of the tin-bromine network, which is crucial for perovskite assembly. We found that under ambient conditions, a DMSO-based tin perovskite salt solution resulted in the formation of a two-phase system, SnBr4(DMSO)2 and MABr, whereas a dimethylformamide-based solution resulted in the formation of vacancy-ordered double perovskite MA2SnBr6. Humidity is known to solvate MABr to form the solvated ions, and so we used the two-phase system for the application in moisture to electricity conversion. The importance of the presence of the scaffold can be seen with the negligible power output from the vacancy-ordered double perovskite obtained with MA2SnBr6. We have fabricated a device with two-phase system that can generate an open-circuit potential of 520 mV and a short-circuit current density of 30.625 µA/cm2 at 85% RH. Also, the device charges a 10 µF capacitor from 150 mV at 51% RH to 500 mV at 85% RH in 6 s at a rate of 52.5 mV/s. Moreover, the output can be scaled by connecting devices in series and parallel configurations. A 527 nm green LED was powered by connecting five devices in series at 75% RH. This indicates a potential for utilizing these moisture-to-electricity conversion devices in powering low-energy requirement devices.

Implementing a 'Lead [Apron]-Free' Cardiac Catheterization: Current Status.

PURPOSE OF REVIEW: In this review, we discuss the status of novel radiation shielding and other methods to reduce radiation exposure and its associated health risks within the CCL. RECENT FINDINGS: There are many devices on the market each with its unique advantages and inherent flaws. Several are available for widespread use with promising data, while others still in development. The field of percutaneous transcatheter interventions includes complex procedures often involving significant radiation exposure. Increased radiation exposes the proceduralist and CCL staff to potential harm from both direct effects of radiation but also from the ergonomic consequences of daily use of heavy personal protective equipment. Here we discuss several innovative efforts to reduce both radiation exposure and orthopedic injury within the CCL that are available, leading to a safer daily routine in a "lead [apron]-free" environment.

Physical Properties of CaTiO3-Modified NaNbO3 Thin Films.

NaNbO3(NN)-based lead-free materials are attracting widespread attention due to their environment-friendly and complex phase transitions, which can satisfy the miniaturization and integration for future electronic components. However, NN materials usually have large remanent polarization and obvious hysteresis, which are not conducive to energy storage. In this work, we investigated the effect of introducing CaTiO3((1-x)NaNbO3-xCaTiO3) on the physical properties of NN. The results indicated that as x increased, the surface topography, oxygen vacancy and dielectric loss of the thin films were significantly improved when optimal value was achieved at x = 0.1. Moreover, the 0.9NN-0.1CT thin film shows reversible polarization domain structures and well-established piezoresponse hysteresis loops. These results indicate that our thin films have potential application in future advanced pulsed power electronics.

Organic-Inorganic Hybrid Cuprous-Based Metal Halides with Unique Two-Dimensional Crystal Structure for White Light-Emitting Diodes.

Ternary cuprous (Cu+)-based metal halides, represented by cesium copper iodide (e.g., CsCu2I3 and Cs3Cu2I5), are garnering increasing interest for light-emitting applications owing to their intrinsically high photoluminescence quantum yield and direct bandgap. Toward electrically driven light-emitting diodes (LEDs), it is highly desirable for the light emitters to have a high structural dimensionality as it may favor efficient electrical injection. However, unlike lead-based halide perovskites whose light-emitting units can be facilely arranged in three-dimensional (3D) ways, to date, nearly all ternary Cu+-based metal halides crystallize into 0D or 1D networks of Cu-X (X = Cl, Br, I) polyhedra, whereas 3D and even 2D structures remain mostly uncharted. Here, by employing a fluorinated organic cation, we report a new kind of ternary Cu+-based metal halides, (DFPD)CuX2 (DFPD+ = 4,4-difluoropiperidinium), which exhibits unique 2D layered crystal structure. Theoretical calculations reveal a highly dispersive conduction band of (DFPD)CuBr2, which is beneficial for charge carrier injection. It is also of particular significance to find that the 2D (DFPD)CuBr2 crystals show appealing properties, including improved ambient stability and an efficient warm white-light emission, making it a promising candidate for single-component lighting and display applications.

Novel Sol-Gel Synthesis Route for Ce- and V-Doped Ba0.85Ca0.15Ti0.9Zr0.1O3 Piezoceramics.

To meet the current demand for lead-free piezoelectric ceramics, a novel sol-gel synthesis route is presented for the preparation of Ba0.85Ca0.15Ti0.9Zr0.1O3 doped with cerium (Ce = 0, 0.01, and 0.02 mol%) and vanadium (V = 0, 0.3, and 0.4 mol%). X-ray diffraction patterns reveal the formation of a perovskite phase (space group P4mm) for all samples after calcination at 800 °C and sintering at 1250, 1350, and 1450 °C, where it is proposed that both dopants occupy the B site. Sintering studies show that V doping allows the sintering temperature to be reduced to at least 1250 °C. Undoped BCZT samples sintered at the same temperature show reduced functional properties compared to V-doped samples, i.e., d33 values increase by an order of magnitude with doping. The dissipation factor tan δ decreases with increasing sintering temperature for all doping concentrations, while the Curie temperature TC increases for all V-doped samples, reaching 120 °C for high-concentration co-doped samples. All results indicate that vanadium doping can facilitate the processing of BCZT at lower sintering temperatures without compromising performance while promoting thermal property stability.

Dual Light Emission of CsSnI3-Based Powders Synthesized via a Mechanochemical Process.

Lead toxicity has hindered the wide applications of lead halide perovskites in optoelectronics and bioimaging. A significant amount of effort has been made to synthesize lead-free halide perovskites as alternatives to lead halide perovskites. In this work, we demonstrate the feasibility of synthesizing CsSnI3-based powders mechanochemically with dual light emissions under ambient conditions from CsI and SnI2 powders. The formed CsSnI3-based powders are divided into CsSnI3-dominated powders and CsSnI3-contained powders. Under the excitation of ultraviolet light of 365 nm in wavelength, the CsSnI3-dominated powders emit green light with a wavelength centered at 540 nm, and the CsSnI3-contained powders emit orange light with a wavelength centered at 608 nm. Both the CsSnI3-dominated and CsSnI3-contained powders exhibit infrared emission with the peak emission wavelengths centered at 916 nm and 925 nm, respectively, under a laser of 785 nm in wavelength. From the absorbance spectra, we obtain bandgaps of 2.32 eV and 2.08 eV for the CsSnI3-dominated and CsSnI3-contained powders, respectively. The CsSnI3-contained powders exhibit the characteristics of thermal quenching and photoelectrical response under white light.

Reliability Risk Mitigation in Advanced Packages by Aging-Induced Precipitation of Bi in Water-Quenched Sn-Ag-Cu-Bi Solder.

Bi-doped Sn-Ag-Cu (SAC) microelectronic solder is gaining attention for its utility as a material for solder joints that connect substrates to printed circuit boards (PCB) in future advanced packages, as Bi-doped SAC is reported to have a lower melting temperature, higher strength, higher wettability on conducting pads, and lower intermetallic compound (IMC) formation at the solder-pad interface. As solder joints are subjected to aging during their service life, an investigation of aging-induced changes in the microstructure and mechanical properties of the solder alloy is needed before its wider acceptance in advanced packages. This study focuses on the effects of 1 to 3 wt.% Bi doping in an Sn-3.0Ag-0.5Cu (SAC305) solder alloy on aging-induced changes in hardness and creep resistance for samples prepared by high cooling rates (>5 °C/s). The specimens were aged at ambient and elevated temperatures for up to 90 days and subjected to quasistatic nanoindentation to determine hardness and nanoscale dynamic nanoindentation to determine creep behavior. The microstructural evolution was investigated with a scanning electron microscope in tandem with energy-dispersive spectroscopy to correlate with aging-induced property changes. The hardness and creep strength of the samples were found to increase as the Bi content increased. Moreover, the hardness and creep strength of the 0-1 wt.% Bi-doped SAC305 was significantly reduced with aging, while that of the 2-3 wt.% Bi-doped SAC305 increased with aging. The changes in these properties with aging were correlated to the interplay of multiple hardening and softening mechanisms. In particular, for 2-3 wt.% Bi, the enhanced performance was attributed to the potential formation of additional Ag3Sn IMCs with aging due to non-equilibrium solidification and the more uniform distribution of Bi precipitates. The observations that 2-3 wt.% Bi enhances the hardness and creep strength of the SAC305 alloy with isothermal aging to mitigate reliability risks is relevant for solder samples prepared using high cooling rates.

Ultrahigh Energy Storage Performance of BiFeO3-BaTiO3 Flexible Film Capacitor with High-Temperature Stability via Defect Design.

Nanoengineering polar oxide films have attracted great attention in energy storage due to their high energy density. However, most of them are deposited on thick and rigid substrates, which is not conducive to the integration of capacitors and applications in flexible electronics. Here, an alternative strategy using van der Waals epitaxial oxide dielectrics on ultra-thin flexible mica substrates is developed and increased the disorder within the system through high laser flux. The introduction of defects can efficiently weaken or destroy the long-range ferroelectric ordering, ultimately leading to the emergence of a large numbers of weak-coupling regions. Such polarization configuration ensures fast polarization response and significantly improves energy storage characteristics. A flexible BiFeO3-BaTiO3 (BF-BT) capacitor exhibits a total energy density of 43.5 J cm-3 and an efficiency of 66.7% and maintains good energy storage performance over a wide temperature range (20-200 °C) and under large bending deformation (bending radii ≈ 2 mm). This study provides a feasible approach to improve the energy storage characteristics of dielectric oxide films and paves the way for their practical application in high-energy density capacitors.

Ultrahigh Electrobending Deformation in Lead-Free Piezoelectric Ceramics via Defect Concentration Gradient Design.

Recent breakthroughs in defect-engineered lead-free piezoelectric ceramics have reported remarkable electrostrain values, surpassing the limit of lattice distortion. This has aroused wide concern on bending deformation and the associated underlying mechanism. Herein, via designing lead-free piezoelectric ceramics with varying volatilization characteristics, it is uncovered that the ultrahigh electrobending deformation is primarily attributed to a large strain gradient induced by unevenly distributed defect dipoles. In 0.5 mm thick Sr/Sn co-doped potassium sodium niobate ceramics featuring volatile K/Na elements, the inherent bipolar electrostrain value can reach 0.3% at 20 kV cm-1 due to the existence of defect dipoles, while the gradient distribution of defect dipole generates significant bending displacement, amplifying apparent electrostrain value to 1.1%. Notably, nonvolatile Ba0.99TiO2.99 ceramic with homogeneous defect dipole distribution does not present electrobending. Of particular interest is that the electrobending phenomenon can be observed through introducing a defect dipole gradient into barium titanate ceramic. A monolayer ceramic with defect dipole gradient can generate large tip displacement (±1.5 mm) in cantilever structure, demonstrating its promising potential in precise positioning. This study delves into the underlying mechanism driving electrobending deformation and its impact on the apparent electrostrain measurement in defect-engineered piezoelectric ceramics, providing fresh perspectives for the development of piezoelectric bending actuators.