Pattern Formation by Electric-Field Quench in a Mott Crystal.

The control of the Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca2RuO4 Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field; it is nonvolatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of nonvolatile electronics based on voltage-controlled nanometric phases.

Low energy bands and transport properties of chromium arsenide.

We apply a method that combines the tight-binding approximation and the Löwdin down-folding procedure to evaluate the electronic band structure of the newly discovered pressure-induced superconductor CrAs. By integrating out all low-lying arsenic degrees of freedom, we derive an effective Hamiltonian model describing the Cr d bands near the Fermi level. We calculate and make predictions for the energy spectra, the Fermi surface, the density of states and transport and magnetic properties of this compound. Our results are consistent with local-density approximation calculations and they also show good agreement with available experimental data for resistivity and the Cr magnetic moment.

Single and double orbital excitations probed by resonant inelastic x-ray scattering.

The dispersion of the elusive elementary excitations of orbital ordered systems, orbitons, has escaped detection so far. The recent advances in resonant inelastic x-ray scattering (RIXS) techniques have made it, in principle, a powerful new probe of orbiton dynamics. We compute the detailed traces that orbitons leave in RIXS for an e{g} orbital ordered system, using the ultrashort core-hole lifetime expansion for RIXS. We observe that both single- and double-orbiton excitations are allowed, where the former, at lower energy, have sharper features. The rich energy- and momentum-dependent intensity variations that we observe make clear that RIXS is an ideal method to identify and map out orbiton dispersions.