RESUMO
Extensive soft x-ray photoelectron spectroscopy studies are performed on Ba8 Ga16 Ge30 (BGG) and Sr8Ga16Ge30 (SGG) single crystals ranging from Fermi to core levels, at a high-energy facility. Valence band x-ray photoelectron spectroscopy (XPS) experiments with theoretical calculations revealed that the valence band is mainly constructed by the Ge/Ga 4s and 4p wave functions with little contribution of the Ba/Sr atomic orbitals. Surprisingly, unexpected features evidencing the different shift for the 2a- and 6d- sites between Ba 4d and Sr 3d are observed. The detailed analyses including theoretical support by first-principles band-structure calculations lead to the conclusion that the component distributions of the larger tetrakaidecahedral cage are different depending on the endohedral atoms, which contrasts with the past consensus that BGG and SGG have the same framework structure. This may give thorough reconsiderations on earlier interpretations of experimental data.
RESUMO
The electronic states of Ba24Ge100 are studied by soft x-ray photoelectron spectroscopy (XPS) at a high-energy photon factory. A large reduction in the density of states (DOS) at the Fermi level is clearly shown before and after the electronic phase transition at 200 K. The changes in the spectrum widths and the fine structures of the core-level Ba 4d spectra give a very reasonable indication of the Ba-atom rattlings in the clathrate polyhedra. On-resonance experiments using the excitation from Ba 3d to 4f levels display that the wave functions of Ba 5d and 6s orbitals give only a small contribution to make a Fermi surface through the hybridization with the Ge20 cluster orbitals. Importantly, reliable values of the DOS at the Fermi level NEF are successfully deduced, using two data sets of DOS obtained from high-resolution XPS and the total magnetic susceptibilities by a superconducting quantum interference device, to be 0.149 and 0.0427 states eV(-1) (Ge atom)(-1) for a high-temperature and for a low-temperature phase.