Self-Organized Growth of 111-Oriented (VNbTaMoW)N Nanorods on MgO(001).

Refractory high-entropy alloy nitride, (VNbTaMoW)N, layers are grown on single-crystalline MgO(001) via ultrahigh vacuum direct current magnetron sputtering of a VNbTaMoW target in Kr/N2 gas mixtures at 1073 K. X-ray diffraction, scanning and transmission electron microscopy, and energy dispersive X-ray spectroscopy characterizations revealed the formation of B1-structured, 111-textured (V0.21Nb0.18Ta0.19Mo0.21W0.21)N1.05 with lattice parameter a = 0.4249 nm. The alloy nitride film exhibits dense columnar microstructure near the substrate-film interface with coherent 001 grain growth limited to a few tens of nanometers, followed by an outgrowth of quasi one-dimensional nanorods with 3-fold symmetric facets. We attribute the self-organized growth of rather unusual 111-textured nanorods on isostructural MgO(001) to kinetic limitations of the sputter-deposition process exacerbated by the sluggish diffusion of the multicomponent adspecies and the preferential growth of {111} crystals.

Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires.

Using AlSb as the model system, we demonstrate that kinetic limitations can lead to the preferential growth of wurtzite (WZ) AlSb shells rather than the thermodynamically stable zinc-blende (ZB) AlSb and that the WZ and ZB relative thickness can be tuned by a careful control of the deposition parameters. We report selective heteroepitaxial radial growth of AlSb deposited by metal-organic vapor phase epitaxy (MOVPE) on InAs nanowire core templates with engineered lengths of axial WZ and ZB segments. AlSb shell thickness, crystal phase, nanostructure, and composition are investigated as a function of the shell growth temperature, Ts, using scanning electron microscopy, transmission electron microscopy, electron tomography, and energy-dispersive X-ray spectroscopy. We find that ZB- and WZ-structured AlSb shells grow heteroepitaxially around the ZB and WZ segments of the InAs core, respectively. Surprisingly, at 390 < Ts < 450 °C, the WZ-AlSb shells are thicker than the ZB-AlSb shells, and their thickness increases with decreasing Ts. In comparison, the ZB-AlSb shell thicknesses increase slightly with increasing Ts. We find that the increased thickness of the WZ-AlSb shells is due to the formation and enhanced deposition on {112̅0} facets rather than on the more commonly grown {101̅0} sidewall facets. Overall, these results, which are in direct contrast with previous reports suggesting that heteroepitaxial radial growth of III-antimonides is always favored on the ZB-structure facets, indicate that the growth of WZ-AlSb is preferred over the thermodynamically stable ZB-AlSb at lower growth temperatures. We attribute this behavior to kinetic limitations of MOVPE of AlSb on ZB and WZ phases of InAs.

Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films.

Pd(111) thin films, ∼245 nm thick, are deposited on Al2O3(0001) substrates at ≈0.5Tm, where Tm is the Pd melting point, by ultrahigh vacuum dc magnetron sputtering of Pd target in pure Ar discharges. Auger electron spectra and low-energy electron diffraction patterns acquired in situ from the as-deposited samples reveal that the surfaces are compositionally pure 111-oriented Pd. Double-axis x-ray diffraction (XRD) ω-2θ scans show only the set of Pd 111 peaks from the film. In triple-axis high-resolution XRD, the full width at half maximum intensity Γω of the Pd 111 ω-rocking curve is 630 arc sec. XRD 111 pole figure obtained from the sample revealed six peaks 60°-apart at a tilt angles corresponding to Pd 111 reflections. XRD ϕ scans show six 60°-rotated 111 peaks of Pd at the same ϕ angles for 11[Formula: see text]3 of Al2O3 based on which the epitaxial crystallographic relationships between the film and the substrate are determined as [Formula: see text]ǁ[Formula: see text] with two in-plane orientations of [Formula: see text]ǁ[Formula: see text] and [Formula: see text]ǁ[Formula: see text]. Using triple axis symmetric and asymmetric reciprocal space maps, interplanar spacings of out-of-plane (111) and in-plane (11[Formula: see text]) are found to be 0.2242 ± 0.0003 and 0.1591 ± 0.0003 nm, respectively. These values are 0.18% lower than 0.2246 nm for (111) and the same, within the measurement uncertainties, as 0.1588 nm for (11[Formula: see text]) calculated from the bulk Pd lattice parameter, suggesting a small out-of-plane compressive strain and an in-plane tensile strain related to the thermal strain upon cooling the sample from the deposition temperature to room temperature. High-resolution cross-sectional transmission electron microscopy coupled with energy dispersive x-ray spectra obtained from the Pd(111)/Al2O3(0001) samples indicate that the Pd-Al2O3 interfaces are essentially atomically abrupt and dislocation-free. These results demonstrate the growth of epitaxial Pd thin films with (111) out-of-plane orientation with low mosaicity on Al2O3(0001).